Untitled
Abstract: No abstract text available
Text: 10-PZ12NMA027MR-M340F68Y targat datasheet 1200V/ 30mΩ flowMNPC 0-SIC Features flow0 12mm housing ● Rohm Silicon Carbide Power MOSFET ● Rohm™ Silicon Carbide Power Schottky Diode ● MNPC Topology with Splitted Output ● Ultra Low Inductance with Integrated DC-capacitors
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10-PZ12NMA027MR-M340F68Y
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Untitled
Abstract: No abstract text available
Text: SM MN04L L20IS S Logic Le evel N-Ch Po ower MOSFE ET 200V LOGIC N-Chan nnel MOSFET Fe eatures • Drain-Sourrce breakdo own voltage e: BVDSS=200 0V Min. • Low gate charge: c Qg=4nC (Typ.) • Low drain-source On-Resistance: RDS(on)=1.35Ω (Max.) • 100% avala
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MN04L
L20IS
SMN04L
SMN04L2
04L20
06-JAN-12
KSD-T6Q017-000
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Untitled
Abstract: No abstract text available
Text: 10-FZ06NBA041FS01-P915L78 preliminary datasheet flowBOOST0 600V/41mΩ Features flow0 12mm housing ● High efficiency symmetric boost ● Ultrafast switching frequency with MOSFET ● Low Inductance Layout ● Tandem to NPC and MNPC modules Target Applications
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10-FZ06NBA041FS01-P915L78
00V/41mâ
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Untitled
Abstract: No abstract text available
Text: 10-PZ06NBA041FS-P915L68Y preliminary datasheet flowBOOST0 600V/41mΩ Features flow0 12mm housing ● High efficiency symmetric boost ● Ultra fast switching with MOSFET and SiC diodes ● Low Inductance Layout ● Tandem to NPC and MNPC modules Target Applications
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10-PZ06NBA041FS-P915L68Y
00V/41mâ
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Untitled
Abstract: No abstract text available
Text: Passively Cooled Diode Laser Bar SPL MNxx Only available in North America SP-pack. left , DL-pack. (right) Features Applications • Uncollimated (MN-series) • 1 cm-laser bar mounted on passive heat sink, no water required • Highly reliable strained layer InGa(Al)As/GaAs
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igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and
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Abstract: No abstract text available
Text: WILLAS FM120-M+ LM1MA141WATHRU Common Anode Silicon FM1200-M+ LM1MA142WA 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Dual Switching DiodeSOD-123+ Pb Free Product PACKAGE Package outline Features • Batch process design, excellent power dissipation offers
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FM120-M+
LM1MA141WA
LM1MA142FM1200-M
OD-123+
OD-123H
M140-MH
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use LM1MA141WAT1G LM1MA142WAT1G in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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LM1MA141WAT1G
LM1MA142WAT1G
SC-70/SOT-323
OT-323/SC-70
3000/Tape
LM1MA141KWA3G
10000/Tape
LM1MA141WAT1G
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anode common fast recovery diode dual
Abstract: LM1MA142WAT1G Diode marking CODE 5M
Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use LM1MA141WAT1G LM1MA142WAT1G in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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LM1MA141WAT1G
LM1MA142WAT1G
SC-70/SOT-323
OT-323/SC-70
3000/Tape
LM1MA141KWA3G
10000/Tape
anode common fast recovery diode dual
LM1MA142WAT1G
Diode marking CODE 5M
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LM1MA142WAT1G
Abstract: No abstract text available
Text: S-LM1MA142WAT3G LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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S-LM1MA142WAT3G
AEC-Q101
LM1MA141WAT1G
S-LM1MA141WAT1G
LM1MA142WAT1G
S-LM1MA142WAT1G
SC-70/SOT-323
LM1MA141WAT1G,
LM1MA142WAT1G,
LM1MA142WAT1G
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din 74
Abstract: GWOY6039 GWOY6040 Q62702-P3555 Q62702-P5312 K1222
Text: Passively Cooled Diode Laser Bar SPL MNxx No Optics SPL MYxx Fast-Axis Collimation Preliminary Data SP-pack. left , DL-pack. (right) Features Applications • Uncollimated (MN-series) or fast-axis collimated radiation (MY-series) • 1 cm-laser bar mounted on passive heat sink,
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GWOY6039
GWOY6040
din 74
GWOY6039
GWOY6040
Q62702-P3555
Q62702-P5312
K1222
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D1980
Abstract: diode marking F5
Text: 2SD1980F5 Transistor, NPN, Darlington pair Features Dimensions Units : mm • • available in CPT F5 (SC-63) package package marking: D1980*Q, where ★ is hFE code and □ is lot number • Darlington connection provides high DC current gain (hFE) damper diode is incorporated
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2SD1980F5
SC-63)
D1980
2SD1980
2SD1980F5
2SD1980F5,
diode marking F5
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aajf
Abstract: No abstract text available
Text: ERA81-004 1a * ± 'J 'W.M'W-Y : Outline Drawings -f= t— K SCHOTTKY BARRIER DIODE : Features • ffiV r • Low Vp : Marking A 7 —n — K : ffl Color code : Silver Super high speed sw itchin g. High reliability by planer design. Voltage class : Applications
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ERA81-004
aajf
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Untitled
Abstract: No abstract text available
Text: P - P * # - f * - K Super F ast Recovery Diode Axial Diode OUTLINE DIMENSIONS S3L60 Case : 1 .4 f 25 =1 600V 2.2A § 25 ±2 7 -°" i a+0 2 ^ 4.4 -o.i i * •S B Œ L L D î 0 CD H o (D •trr 5 0 n s If ) ^ Color code (Blue) sk^ epbhbbh Marking ffl m S3L
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S3L60
0033ti
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ERB44
Abstract: ERB44-08 T151 T930
Text: ERB44 ia I < s a a ia t ^ ^ - K : Outline Drawings FAST RECOVERY DIODE : Features :7jv : Marking High voltage by mesa design • f t flMRtt # 7- 3- K:» High reliability C olor code : Green • E J ii I Applications Abridged type name 7* Voltage class High speed sw itch in g .
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ERB44
30tf3^
I95t/R89)
ERB44-08
T151
T930
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marking 2U 77 diode
Abstract: marking DIODE 2U 04 marking code IAM 12CT ERC84-009 diode marking code 7-7-7-7 marking 2U diode marking DIODE 2U
Text: ERC84-009I3A K • fl- B '+ ii : Outline Drawings SCHOTTKY BARRIER DIODE Features • 1&VF Low VF W$z7j\ : Marking Ä 7 “- 3 - K : f f Color code : Blue Super high speed switching. • 7 V - * - f t « C J&ftflH Ktt High reliability by planer design. Abridged type nam e'"'" Î 1
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ERC84-009
marking 2U 77 diode
marking DIODE 2U 04
marking code IAM
12CT
diode marking code 7-7-7-7
marking 2U diode
marking DIODE 2U
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Untitled
Abstract: No abstract text available
Text: S 'a y M u - / tU T K Schottky Barrier Diod« Axial Diode O U T L IN E D IM E N S IO N S Case : Axial D1NS4 40V 1A B= 2QMIN ' ¿2.6 o » 20MIN -M—° C athode band Marking S4 6N - - u - y h A ! » < f « ï D ate code Type No. U nit I mm • R A TIN G S Absolute Maximum Ratings
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smd diode schottky code marking 5A
Abstract: SMD MARKING CODE M 4 Diode U01 SMD diode smd marking 5P smd DIODE code marking Q KIV* diode smd diode marking c3 diode SMD MARKING CODE JV DE5PC3 smd code marking js
Text: Schottky Barrier Diode Twin Diode mnm DE5PC3 Package o u t lin e E-pack U nit I mm W eigh t 0.326 k T y p 30V 5A 1 *1 *1 0 @ ® Feature • SMD • Ultra-Low V f=0.4V • High lo Rating -Small-RKG • SMD • î 3 ® V f =0.4V T y p e No. Date code Main Use
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0336g
TJ-25TC
smd diode schottky code marking 5A
SMD MARKING CODE M 4 Diode
U01 SMD
diode smd marking 5P
smd DIODE code marking Q
KIV* diode
smd diode marking c3
diode SMD MARKING CODE JV
DE5PC3
smd code marking js
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Scans-00828
Abstract: DE10PC3 SHINDENGEN DIODE 0336g
Text: Schottky Barrier Diode Twin Diode mnm DE10PC3 o u tlin e E-pack Package Unit I mm Weight 0.326k Typ r r« 30 V 10A œ - Feature • SMD • SMD • î 3 V f=0.4V • Ultra-Low V f=0.4V • High lo Rating -Small-RKG 10PC3 n - y W X fW Date code Main Use
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DE10PC3
0336g
I-111,
J532-1)
Scans-00828
DE10PC3
SHINDENGEN DIODE
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MARKING 3D regulator
Abstract: shindengen regulator DIODE JSu DE10SC3L 3D smd marking DIODE marking VU SHINDENGEN DIODE smd diode marking sim
Text: Schottky Barrier Diode Twin Diode mnm DE10SC3L Package o u t lin e E-pack Unit Imm Weight 0.326k Typ 3 0 V 10 A 1 * 1 01 * @® F e a tu re • SMD • SMD • <SV f= 0.45V • Low V f=0.45V • P rrsm7 V C 3 > ì / i (SK ì 3) Type No. • P rrsm Rating
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DE10SC3L
0306g
I-111,
J532-1
MARKING 3D regulator
shindengen regulator
DIODE JSu
DE10SC3L
3D smd marking
DIODE marking VU
SHINDENGEN DIODE
smd diode marking sim
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RJP 30 h1
Abstract: marking code YS SMD SMD XM M1FL20U MARKING CODE SMD IC smd marking HK M1FL20 diode SMD MARKING CODE JV SMD MARKING CODE l6n
Text: Super Fast Recovery Diode single Diode mnm o u t lin e Package ! M1F M 1 FL2 0 U Unit I mm Weight 0.027k Typ 200V 1.1 A ij'/ —K t— ? Cathode m ark (D Feature • /J ^ S M D • Sm all SM D • i& y 'f X • trr=35ns • Low Noise • trr=35ns |L 6 N
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M1FL20U
027jiiTyp)
20/xm
I-111,
J532-1)
RJP 30 h1
marking code YS SMD
SMD XM
M1FL20U
MARKING CODE SMD IC
smd marking HK
M1FL20
diode SMD MARKING CODE JV
SMD MARKING CODE l6n
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113t smd code
Abstract: SMD MARKING CODE 16t smd diode marking codes 3t 113T smd diode schottky code marking 1A d28 smd
Text: Schottky Barrier Diode single Diode DG1H3 mnm o u t lin e Package G1F U nit I mm W eight 0.01 1r T yp 3 0 V 1A 3.5 Feature |D28l •I2 'J 'S !S M D • Ultra-small SMD • i8 ü § y = 0 .8 m m • Ultla-thin PKG=0.8mm • Low V f=0.36V • V f = 0 .3 6 V
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/i77U-ffiffrRGlt
113t smd code
SMD MARKING CODE 16t
smd diode marking codes 3t
113T
smd diode schottky code marking 1A
d28 smd
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F600M
Abstract: S08230 l32 sot23 hp 3080 diode MARK, g5 sot23
Text: ¥J>0%. HEWLETT ft "Em PACKARD Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodea Optimized fo r Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface M ount SOT-23
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HSMP-38XX
HSMP-48XX
OT-23
HEWPS057P*
6091-4211E
5091-B184E
F600M
S08230
l32 sot23
hp 3080 diode
MARK, g5 sot23
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Untitled
Abstract: No abstract text available
Text: l i 5E D POUEREX INC • 72^41,31 0DÜ3bhB 7 " F -â ? -ü mNEREX ED_ Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 72.75.15 Dual SCft, SCR/Diode Isolated Modules
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1S697
BP107,
Amperes/100-2000
ED430825
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