SS16 Diode
Abstract: SS16 DIODE schottky marking code ss16 SS16 MARKING
Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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1E-02
1E-03
1E-04
1E-05
1E-06
SS16 Diode
SS16 DIODE schottky
marking code ss16
SS16 MARKING
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diode MARKING CODE SS16
Abstract: 403D SS16 Diode SS16T3
Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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Original
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PDF
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403D
Abstract: SS16 SS16T3
Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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Original
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SS16/D
403D
SS16
SS16T3
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PDF
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SS16 DIODE schottky
Abstract: SS16 Diode 1ss16 SMA CASE 403D-02 403D SS16 diode MARKING CODE SS16
Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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Original
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r14525
SS16/D
SS16 DIODE schottky
SS16 Diode
1ss16
SMA CASE 403D-02
403D
SS16
diode MARKING CODE SS16
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PDF
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Untitled
Abstract: No abstract text available
Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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Original
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SS16/D
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PDF
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SS16 DIODE
Abstract: 403D SS16
Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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Original
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r14525
SS16/D
SS16 DIODE
403D
SS16
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SS14 DIODE
Abstract: SS14
Text: SS12, SS13, SS14, SS15, SS16 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency
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Original
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J-STD-020,
AEC-Q101
DO-214AC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
SS14 DIODE
SS14
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SS14
Abstract: No abstract text available
Text: SS12-M3, SS13-M3, SS14-M3, SS15-M3, SS16-M3 www.vishay.com Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency
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Original
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SS12-M3,
SS13-M3,
SS14-M3,
SS15-M3,
SS16-M3
J-STD-020,
DO-214AC
50electronic
2002/95/EC.
2002/95/EC
SS14
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"Power Diode"
Abstract: marking code ss16 SS16 DIODE schottky 403D SS16 SS16T3 SS16T3G
Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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Original
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SS16/D
"Power Diode"
marking code ss16
SS16 DIODE schottky
403D
SS16
SS16T3
SS16T3G
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PDF
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Untitled
Abstract: No abstract text available
Text: SS16T3G, SBRA8160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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Original
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SS16T3G,
SBRA8160T3G
SS16/D
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SS16T3G
Abstract: SBRA8160
Text: SS16T3G, SBRA8160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay
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Original
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SS16T3G,
SBRA8160T3G
SS16/D
SS16T3G
SBRA8160
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PDF
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COLOR tv tube charger circuit diagrams
Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0001-1102
I8262
COLOR tv tube charger circuit diagrams
MBRF 1015 CT
smd diode S4 67A
DO-213AB smd diode color marking code
vacuum tube applications data book
V40100PG
diode 719 b340a
EQUIVALENT 31gf6
SB050 D 168
s104 diode 87a
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Schottky Diode 039 B34
Abstract: S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-0809 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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Original
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vse-db0001-0809
Schottky Diode 039 B34
S4 84a DIODE schottky
MELF ZENER DIODE color bands blue
diode RGP 15J
sb050 d 331
s104 diode 87a
252 B34 SMD ZENER DIODE
SB050 transistor equivalent
MELF DIODE color bands
smd transistor P2D
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SS14 SOD123
Abstract: FM1150
Text: FM120-M+ FM120LS WILLAS THRUTHRU 1.0A SCHOTTKY BARRIER RECTIFIERS - 20V- 200V 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SMA-LS PACKAGE FM1200-M+ FM1200LS Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers
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OD-123+
FM120-M
FM1200-M
OD-123H
RS-481-A
SS14 SOD123
FM1150
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SS14 DIODE schottky G
Abstract: DIODE marking code SS14 SS16 DIODE schottky diode marking ss14 diode ss15 SS14 DIODE SS14 DIODE schottky SS13 SS14 SS15
Text: CYStech Electronics Corp. Spec. No. : C338AS Issued Date : 2004.03.10 Revised Date : Page No. : 1/1 1.0Amp. Surface Mount Schottky Barrier Diodes CSMASS1XAS Series Features • Low forward voltage drop • High current capability • High reliability • High surge current capability
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Original
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C338AS
MIL-STD-202
UL94V-0
UL94V-0
SS14 DIODE schottky G
DIODE marking code SS14
SS16 DIODE schottky
diode marking ss14
diode ss15
SS14 DIODE
SS14 DIODE schottky
SS13
SS14
SS15
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FM150L
Abstract: FM160L SS15 SS16 DIODE marking code SS15
Text: Formosa MS Chip Schottky Barrier Diodes FM150L THRU FM160L Silicon epitaxial planer type Features SMA Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.185 4.8 0.173(4.4) 0.012(0.3) Typ.
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FM150L
FM160L
MIL-S-19500
DO-214AC
MIL-STD-750,
300us
FM160L
SS15
SS16
DIODE marking code SS15
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FM120 marking
Abstract: SS14 DIODE schottky FM1100 FM120 SS13 SS14 SS15 SS16 ss14 diode f.m 120 01
Text: Formosa MS Chip Schottky Barrier Diodes FM120 THRU FM1100 Silicon epitaxial planer type Features SMA Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.185 4.8 0.177(4.4) 0.012(0.3) Typ.
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Original
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FM120
FM1100
MIL-S-19500
DO-214AC
MIL-STD-750,
300us
FM120 marking
SS14 DIODE schottky
FM1100
SS13
SS14
SS15
SS16
ss14 diode
f.m 120 01
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Untitled
Abstract: No abstract text available
Text: Formosa MS Chip Schottky Barrier Diodes FM120 THRU FM1100 Silicon epitaxial planer type Features SMA Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.189 4.8 0.165(4.2) 0.012(0.3) Typ.
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Original
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FM120
FM1100
MIL-S-19500
DO-214AC
MIL-STD-750,
300us
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PDF
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Untitled
Abstract: No abstract text available
Text: Formosa MS Chip Schottky Barrier Diodes FM120 THRU FM1100 Silicon epitaxial planer type SMA Features Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.189 4.8 0.165(4.2) 0.012(0.3) Typ.
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Original
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FM120
FM1100
MIL-S-19500
DO-214AC
MIL-STD-750,
300us
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PDF
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Untitled
Abstract: No abstract text available
Text: Formosa MS Chip Schottky Barrier Diodes FM120 THRU FM1100 Silicon epitaxial planer type Features SMA Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.189 4.8 0.165(4.2) 0.012(0.3) Typ.
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Original
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FM120
FM1100
MIL-S-19500
DO-214AC
MIL-STD-750,
300us
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PDF
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Untitled
Abstract: No abstract text available
Text: Formosa MS Chip Schottky Barrier Diodes FM120 THRU FM1100 Silicon epitaxial planer type Features SMA Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.185 4.8 0.173(4.4) 0.012(0.3) Typ.
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Original
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FM120
FM1100
MIL-S-19500
DO-214AC
MIL-STD-750,
osit18
300us
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PDF
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SS12-S110
Abstract: SS14 DIODE SS13 SS14 SS15 SS16 SS18
Text: SS12-S110 Chip Schottky Barrier Diodes Features SMA-L Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.205 5.2 0.189(4.8) 0.012(0.3) Typ. For surface mounted applications. 0.110(2.8)
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SS12-S110
MIL-S-19500
DO-214AC
MIL-STD-750,
SS12-S110
SS14 DIODE
SS13
SS14
SS15
SS16
SS18
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PDF
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SS14 DIODE
Abstract: FM1100-N FM120-N SS13 SS14 SS15 SS16 FM140-N FM140N
Text: Formosa MS Chip Schottky Barrier Diodes FM120-N THRU FM1100-N Silicon epitaxial planer type SMA-N Features 0.185 4.8 0.173(4.4) 0.012(0.3) Typ. Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound.
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FM120-N
FM1100-N
MIL-S-19500
DO-214AC
MIL-STD-750,
300us
SS14 DIODE
FM1100-N
SS13
SS14
SS15
SS16
FM140-N
FM140N
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Pnp transistor smd ba rn
Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj
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OCR Scan
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Q9001-1994i
CMSH1-20ML
Pnp transistor smd ba rn
transistor marking code 12W SOT-23
smd transistor marking p69
TRANSISTOR SMD MARKING CODE s2a
transistor smd bc rn
TRANSISTOR SMD MARKING CODE bc ru
1ff TRANSISTOR SMD MARKING CODE
smd transistor P2D
Motorola transistor smd marking codes
SMD TRANSISTOR MARKING P28
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