bar74
Abstract: oscillograph
Text: BAR74 Silicon Switching Diode 3 For high-speed switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking BAR74 JBs Pin Configuration 1=A 2 = n.c. Package 3=C SOT23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 Peak reverse voltage VRM
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BAR74
VPS05161
EHA07002
EHB00013
EHB00014
Jul-27-2001
EHB00015
bar74
oscillograph
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Untitled
Abstract: No abstract text available
Text: Silicon Switching Diode ● BAR 74 For high-speed switching Type Marking Ordering Code tape and reel BAR 74 JBs Q62702-F704 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 50 V Peak reverse voltage VRM 50
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Q62702-F704
OT-23
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BAL74
Abstract: BAR74 BCW66
Text: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAL74 BAR74 ! ! Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAL74/BAR74.
BAL74
BAR74
BAL74
BAR74
BCW66
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Untitled
Abstract: No abstract text available
Text: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAL74 BAR74 ! ! Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAL74/BAR74.
BAL74
BAR74
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sanken lot number
Abstract: B105 CF35 FMXJ-2164S low forward voltage fast diode
Text: Ultra-Fast-Recovery Rectifier Diode FMXJ-2164S September, 2005 •Package-TO220F ■General Description FMXJ-2164S employs JBS structure*, i.e. the combined structure of SBD and FRD. In addition, together with our proprietary lifetime control technology, Ultra fast recovery, Low loss and
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FMXJ-2164S
Package---TO220F
FMXJ-2164S
D01-001EA-050912
sanken lot number
B105
CF35
low forward voltage fast diode
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SANKEN smps
Abstract: Sanken marking FMXA-1106S sanken lot number B105 CF35 FMXJ-2164S "ultraFast Recovery Diode"
Text: Ultrafast Recovery Diode FMXA-1106S November, 2005 •Package-TO220F ■General Description FMXJ-2164S employs JBS structure*, i.e. the combined structure of SBD and FRD. In addition, together with our proprietary lifetime control technology, Ultra fast recovery, Low loss and
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FMXA-1106S
Package---TO220F
FMXJ-2164S
D01-002EA-051128
SANKEN smps
Sanken marking
FMXA-1106S
sanken lot number
B105
CF35
"ultraFast Recovery Diode"
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B3P5-vh-b
Abstract: 12v dc to 170v dc JBW05-2R0 JBW24-1R3 VHR-5N TDK noise FILTER 250v 10a A122 AC Fuse 250V 30A B3P5-VH JBW05-3R0
Text: A122_JBW 1/19 TDK Switching Power Supply Wide input, compact and device-embedded type J SERIES JBW UL/CSA, EN60950 approved and Electric Appliances And Material Control Law compliant, CE marking product [FEATURES] • Compact and low price. • Wide input voltage range type.
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EN60950
B3P5-vh-b
12v dc to 170v dc
JBW05-2R0
JBW24-1R3
VHR-5N
TDK noise FILTER 250v 10a
A122
AC Fuse 250V 30A
B3P5-VH
JBW05-3R0
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JBW15-3R5
Abstract: TDK noise FILTER 250v 10a A122 B3P5 DIODE 240v 3a EN55022-B JBW05-3R0 JBW12-0R9 JBW15-0R7 JBW24-1R3
Text: A122_JBW 1/24 TDK Switching Power Supply Wide input, compact and device-embedded type J SERIES JBW UL/CSA, EN60950 approved and Electric Appliances And Material Control Law compliant, CE marking product (3-year warranty period) [FEATURES] • Compact and low price.
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EN60950
JBW15-3R5
TDK noise FILTER 250v 10a
A122
B3P5
DIODE 240v 3a
EN55022-B
JBW05-3R0
JBW12-0R9
JBW15-0R7
JBW24-1R3
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Untitled
Abstract: No abstract text available
Text: Transient Voltage Suppression Diodes Surface Mount > 3.0SMC series 3.0SMC Series RoHS Description TVS Diode Arrays SPA Family of Products Uni-directional The 3.0SMC series is designed specifically to protect sensitive electronic equipment from voltage transients
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JESD201A
IEC-61000-4-2
DO-214AB
16mm/13â
RS-481
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Fuji Electric SM
Abstract: No abstract text available
Text: 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG811S06R 2. OUT VIEW • MARKING- MOLDING RESIN 1 Out view is shown l Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.
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YG811S06R
Fuji Electric SM
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAR 74 Silicon Switching Diode • For high-speed switching Type Marking Ordering Code tape and reel BAR 74 JBs Q62702-F704 Pin Configuration Package1) SOT-23 o-— ^ 1 -o 1 EHA07002 Maximum Ratings Parameter Symbol Values Unit V Reverse voltage
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Q62702-F704
OT-23
EHA07002
aS35bQ5
01202Mb
flS3Sb05
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Untitled
Abstract: No abstract text available
Text: Silicon Switching Diode 3SE D • BAR 74 053b3E0 OOlbM^G Ü ■ SIP SIEMENS/ SP CLi SEMICONDS For high-speed switching Type B BAR 74 Marking JB Ordering code for versions In bulk Q62702-A615 Ordering code for versions on 8 mm-tape Q62702-A704 Package SOT 23
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053b3E0
Q62702-A615
Q62702-A704
175PF
23b32Ã
T-03-Q9
023b3SD
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erc06
Abstract: A537 A536
Text: ERC06H sa • « * » • * » : Outline Drawings FAST RECO VERY DIODE ■ 4$^ : Features : Marking Most suitable for color T.V. damper < 7- 3 —K : S : Blue High voltage by mesa design. Color code High reliability Abridged type name : Applications <T3 - C">
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ERC06H
I95t/R89)
erc06
A537
A536
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TI43A
Abstract: No abstract text available
Text: ERC30 i .5A : Outline Drawings FAST RECOVERY DIODE A I Features • y * > 2 'X f c :- K a i # # c a t ' W ^ S uper high speed sw itchin g. tjz : Marking • te V F Ä 5-P-K: £ Color code : Orange Low Vp IS S JB S Abridged type name High reliability o •
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ERC30
1995-9095t/R89
TI43A
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Untitled
Abstract: No abstract text available
Text: ERA83-004<ia : Outline D raw ings SCHOTTKY BARRIER DIODE Features • ifeVF IS /K : Marking Low V F Super high speed sw itchin g. • tv— «fElîfe: Ù « ffi i -j afcfgfct e ►►►►► - ti'j—Fv-ÿ High reliability by planer design. • ' J ^ m m f
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12fl-D
500ns,
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RA83
Abstract: ERA83-004 A4DC
Text: ERA83-004<ia : Outline D raw ings SCHOTTKY BARRIER DIODE Features • ifeVF IS /K : Marking Low V F Super high speed sw itchin g. • t v — «fElîfe : Ù « f f i i -j af c f gf c t e ► ► ►►► High reliability by planer design. • ' J ^ m m f
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ERA83-004
500ns,
RA83
A4DC
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ERA83-004
Abstract: RA83
Text: ERA83-004<ia : Outline D raw ings SCHOTTKY BARRIER DIODE Features • ifeVF IS /K : Marking Low V F Super high speed sw itchin g. • t v — «fElîfe : Ù « f f i i -j af c f gf c t e ► ► ►►► High reliability by planer design. • ' J ^ m m f
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ERA83-004
500ns,
JEKi141
RA83
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Untitled
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode m tm OUTLINE Package : MTO-3P S20LC60US U nit I mm W eight 6 .1 g T y p : 600V 20A Feature • ® M ± FRD • High Voltage Super FRD • Low Noise • trr= 25ns I • trr=25ns • Small ö jc • 0 jc jb V l'£ l'
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S20LC60US
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marking JB SCHOTTKY BARRIER DIODE
Abstract: marking JB diode SG40TC12M diode marking jb
Text: Schottky Barrier Diode Twin Diode mtmm SG40TC12M o u tlin e Package : FTO-220G Unit : mm o -y H d ^ J 120V 40A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • < S Ir = 6 0 |j A Tj=175°C Full Molded Low Ir=60|jA Resistance for thermal run-away
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FTO-220G
SG40TC12M
J533-1)
50IIz
J533-1
marking JB SCHOTTKY BARRIER DIODE
marking JB diode
SG40TC12M
diode marking jb
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtmm SG 30TC 12M Unit : mm Package : FTO-220G o -y H d ^ J 120V 30A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • o u t lin e Ir=40|jA Tj=175°C Full Molded Low Ir=40|jA Resistance for thermal run-away
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FTO-220G
J533-1)
SG30TC12M
50IIz
J533-1
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marking JB SCHOTTKY BARRIER DIODE
Abstract: marking JB diode diode marking jb
Text: Schottky Barrier Diode Twin Diode mtmm S G 20T C 1 2 M o u t lin e U nit : mm Package : FTO-220G o -y H d ^ J 120V 20A 4.5 Feature • Tj=175°C • 7 Jb = E -Jb K • Tj=175°C • <SIr =30|j A • Low Ir =30| jA • Resistance for thermal run-away • Full Molded
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FTO-220G
J533-1)
SG20TC12M
50IIz
marking JB SCHOTTKY BARRIER DIODE
marking JB diode
diode marking jb
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D30L60
Abstract: No abstract text available
Text: Super Fast Recovery Diode Single Diode •¿m H D30L60 OUTLINE Unit : mm W eight 4.3« T yp P a c k a g e : IT O -3 P 5.5 15 600V 30A a -Æ H K W ) Date code N Feature • raiHŒ FRD • • • • • e y -fX • trr=150ns • yJlst-Jb F S3T High Voltage Super FRD
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D30L60
150ns
D30L60
J533-1
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SF10LC30SM
Abstract: DIODE 3J WTT device marking
Text: Super Fast Recovery Diode Twin Diode W tm SF10LC30SM OUTLINE 300V 10A Feature • i& y 't 'X • • • • • trr=25ns • y i b t — Jb K • I f ijf B ± 2kV SIŒ Low Noise trr=25ns Full Molded Dielectric Strength 2kV Main Use • T . 'i • WM* O A
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SF10LC30SM
FTQ-220A
waveli50Hz
SF10LC30SM
DIODE 3J
WTT device marking
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SF10LC40
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode OUTLINE Package I FTO-220 SF10LC40 Unit :mm Weight 1.9« Typ 4.5 4 0 0 V 10 A Feature • ñS'fX • trr=50ns • 711^-10 K 2kV ( S II • • • • Low Noise tnr=50ns Full Molded Dielectric Strength 2kV Main Use •
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FTO-220
SF10LC40
SF10LC40
J533-1)
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