Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DIODE MARKING OX Search Results

    DIODE MARKING OX Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MARKING OX Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MC74VHC1G66 SPST NO Normally Open Analog Switch MARKING DIAGRAMS 5 SC−88A DF SUFFIX CASE 419A High Speed: tPD = 20 ns (Typ) at VCC = 5.0 V 5 5 1 Low Power Dissipation: ICC = 1.0 mA (Max) at TA = 25°C V9 M G Diode Protection Provided on Inputs and Outputs


    Original     		PDF MC74VHC1G66 MC74VHC4066 MC14066. MC74VHC1G66/D

    B2030

    Abstract: B-2030
    Text: MBR2030CTL Preferred Device SWITCHMODE Dual Schottky Power Rectifier . . . employing the Schottky Barrier principle in a large area metal- to- silicon power diode. State- of- the- art geometry features epitaxial construction with oxide passivation and metal overlay contact.


    Original     		PDF MBR2030CTL 2N2222 2N6277 1N5817 B2030 B-2030

    Untitled

    Abstract: No abstract text available
    Text: SB10150DC – SB10200DC 10A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection


    Original     		PDF SB10150DC SB10200DC PAK/TO-263 D2PAK/TO-263, MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: SB8150DC – SB8200DC 8.0A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection


    Original     		PDF SB8150DC SB8200DC PAK/TO-263 D2PAK/TO-263, MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: SB40150DC – SB40200DC 40A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection


    Original     		PDF SB40150DC SB40200DC PAK/TO-263 D2PAK/TO-263, MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: SB16150DC – SB16200DC 16A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection


    Original     		PDF SB16150DC SB16200DC PAK/TO-263 D2PAK/TO-263, MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: SB20150DC – SB20200DC 20A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection


    Original     		PDF SB20150DC SB20200DC PAK/TO-263 D2PAK/TO-263, MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: SB30150DC – SB30200DC 30A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection


    Original     		PDF SB30150DC SB30200DC PAK/TO-263 D2PAK/TO-263, MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: SB25150DC – SB25200DC 25A HIGH VOLTAGE SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection


    Original     		PDF SB25150DC SB25200DC PAK/TO-263 D2PAK/TO-263, MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: SBL3020DC – SBL3045DC 30A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 200A Peak


    Original     		PDF SBL3020DC SBL3045DC PAK/TO-263 D2PAK/TO-263, MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2N10 Preliminary Power MOSFET 2 Amps,100 Volts N-CHANNEL POWER MOSFET  DESCRIPTION The UTC UT2N10 is N-Channel enhancement mode silicon gate power FET.it uses a special gate oxide designed to provide full rated conductance at gate biases through 3V ~ 5V and facilitate true on-off


    Original     		PDF UT2N10 UT2N10 QW-R502-511

    Untitled

    Abstract: No abstract text available
    Text: SB2520DC – SB25100DC 25A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 200A Peak


    Original     		PDF SB2520DC SB25100DC PAK/TO-263 D2PAK/TO-263, MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: SB820DC – SB8100DC 8.0A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 150A Peak


    Original     		PDF SB820DC SB8100DC PAK/TO-263 D2PAK/TO-263, MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: SB1620DC – SB16100DC 16A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 150A Peak


    Original     		PDF SB1620DC SB16100DC PAK/TO-263 D2PAK/TO-263, MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: SB2020DC – SB20100DC 20A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 150A Peak


    Original     		PDF SB2020DC SB20100DC PAK/TO-263 D2PAK/TO-263, MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: SB4020DC – SB40100DC 40A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 250A Peak


    Original     		PDF SB4020DC SB40100DC PAK/TO-263 D2PAK/TO-263, MIL-STD-202,

    Untitled

    Abstract: No abstract text available
    Text: SB3020DC – SB30100DC 30A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 200A Peak


    Original     		PDF SB3020DC SB30100DC PAK/TO-263 D2PAK/TO-263, MIL-STD-202,

    b20100

    Abstract: B20100 diode MBRF20100CT
    Text: MBRF20100CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as


    Original     		PDF MBRF20100CT AN1040. b20100 B20100 diode MBRF20100CT

    B20100

    Abstract: B20100 diode MBRF20100CT
    Text: MBRF20100CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		PDF MBRF20100CT AN1040. B20100 B20100 diode MBRF20100CT

    b2060

    Abstract: No abstract text available
    Text: MBRF2060CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as


    Original     		PDF MBRF2060CT AN1040. b2060

    b2060

    Abstract: No abstract text available
    Text: MBRF2060CT Preferred Device SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		PDF MBRF2060CT AN1040. b2060

    Untitled

    Abstract: No abstract text available
    Text: MBR1100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage,


    Original     		PDF MBR1100

    marking B1100

    Abstract: No abstract text available
    Text: MBR1100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage,


    Original     		PDF MBR1100 marking B1100

    ERA82-004

    Abstract: P151 T151 T810 T930 a316
    Text: ERA 82-004 o.6A M J f : Outline Drawings SC H O TTK Y BARRIER DIODE Features • te V F Low V f ISït f : Marking *•7- o—K : t-i Color code •White Super high speed switching. • n m - ¿ ¿ a ti« H 4 High reliability by planer design. ¥ 1 D y f-Na


    OCR Scan     		PDF ERA82-004 l95t/R89 P151 T151 T810 T930 a316