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    DIODE MP Search Results

    DIODE MP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE MP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    pn junction diode structure

    Abstract: "Power Diode" smd 3a LM317 spice MOSFET HALF BRIDGE Power Supply AC TO DC5V 50 IGBT 60A spice model AC DC 60v 10amp 31DF2 S0D-123 ferrite transformer power for power supply atx what is THERMAL RUNAWAY IN RECTIFIER MOSFET
    Text: CONTENTS Diode is the basics power semiconductor 1 Structure, symbol, and basic nature of diode 1 Rectifier diode for general use, and fast recovery diode 2 Experiments to ascertain basic nature of diode — Forward and Reverse characteristics 2 Forward power loss and reverse power loss


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    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


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    2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P PDF

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


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    2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor PDF

    Diode Motorola 711 2N2905A

    Abstract: pin configuration transistor BC547 2N2222 BC237 2N555
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMAD130 MMAD1103 MMAD1105 MMAD1107 MMAD1109 Monolithic Diode Arrays Surface Mount Diode Arrays These diode arrays are multiple diode junctions fabricated by a planar process and mounted in integrated circuit packages for use in high–current, fast–switching


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    MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MV2103 Diode Motorola 711 2N2905A pin configuration transistor BC547 2N2222 BC237 2N555 PDF

    "laser diode Driver Circuit"

    Abstract: SFP Laser Driver
    Text: Signal Conditioning/Calibration and Control Products X9530 Temperature Compensated Laser Diode Controller Description • SONET and SDH Transmission System Laser Diode Bias Control • 1G and 10G Ethernet, and Fibre Channel Laser Diode Driver Circuits The X9530 is a highly integrated laser diode bias controller


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    X9530 256-tap, 100-tap, 64-tap, 256-tap 1024-tap 14-lead "laser diode Driver Circuit" SFP Laser Driver PDF

    Untitled

    Abstract: No abstract text available
    Text: http://www.sanken-ele.co.jp SANKEN ELECTRIC MP2-202S Mar. 2008 Fast Recovery Diode General Description MP2-202S is an ultrafast recovery diode of low leak current. Life time killer selection realizes low leak current at high temperature. Package Applications


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    MP2-202S MP2-202S 100mA /200mA PDF

    zener diode 12c

    Abstract: No abstract text available
    Text: Part: MPTE-12C Series: MPTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00


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    MPTE-12C 10x160Â 10x1000 10x1000Â zener diode 12c PDF

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    Abstract: No abstract text available
    Text: Part: MPTE-45C Series: MPTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00


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    MPTE-45C 10x160Â 10x1000 10x1000Â PDF

    diode zener 22c

    Abstract: No abstract text available
    Text: Part: MPTE-22C Series: MPTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00


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    MPTE-22C 10x160Â 10x1000 10x1000Â diode zener 22c PDF

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTPS720MC ZX3CD3S1M832 MPPS Miniature Package Power Solutions 40V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-40V; RSAT = 104m ; C = -3A


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    ZXTPS720MC ZX3CD3S1M832 PDF

    Untitled

    Abstract: No abstract text available
    Text: Part: MPTE-8C Series: MPTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 50.00 Maximum Temperature Max Temp (°C ) 0.00


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    10x160Â 10x1000 10x1000Â PDF

    18c zener diode

    Abstract: No abstract text available
    Text: Part: MPTE-18C Series: MPTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00


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    MPTE-18C 10x160Â 10x1000 10x1000Â 18c zener diode PDF

    12 v 1500 mA battery

    Abstract: No abstract text available
    Text: Part: MPTE-15C Series: MPTE Series - 1500W TVS Diode Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current IR 2.00 Maximum Temperature Max Temp (°C ) 0.00


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    MPTE-15C 10x160Â 10x1000 10x1000Â 12 v 1500 mA battery PDF

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTNS618MC ZX3CDBS1M832 MPPS Miniature Package Power Solutions 20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY NPN Transistor Schottky Diode VCEO = 20V; RSAT = 47m ; C = 4.5A


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    ZXTNS618MC ZX3CDBS1M832 PDF

    Untitled

    Abstract: No abstract text available
    Text: NOT RECOMMENDED FOR NEW DESIGNS PLEASE USE ZXTPS717MC ZX3CD1S1M832 MPPS Miniature Package Power Solutions 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE COMBINATION DUAL SUMMARY PNP Transistor Schottky Diode VCEO =-12V; RSAT = 65m ; C = -4A


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    ZXTPS717MC ZX3CD1S1M832 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate DIODE DK4148NND03 SWITCHING DIODE - WBFBP-03B TOP DESCRIPTION Epitaxial planar Silicon diode 1.2x1.2×0.5 unit: mm + FEATURES Fast Switching Speed Ultra-Small Surface Mount Package


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    WBFBP-03B DK4148NND03 WBFBP-03B 150mA PDF

    T2N3904

    Abstract: No abstract text available
    Text: LM95221 LM95221 Dual Remote Diode Digital Temperature Sensor with SMBus Interface Literature Number: SNIS134A LM95221 Dual Remote Diode Digital Temperature Sensor with SMBus Interface General Description The LM95221 is a dual remote diode temperature sensor in


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    LM95221 LM95221 SNIS134A MMBT3904 T2N3904 PDF

    MPL-102S

    Abstract: No abstract text available
    Text: SANKEN ELECTRIC CO., LTD. MPL-102S 1. Scope The present specifications shall apply to Sanken silicon diode MPL-102S. 2. Outline Type Silicon Diode Structure Resin Molded Applications Pulse Rectification, etc 3. Flammability UL94V-0 Equivalent 060511 1/4


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    MPL-102S MPL-102S. UL94V-0 10msec. MPL-102S PDF

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diode MPEN-230AF December. 2005 •General Description ■Package-TO-262 High Voltage Schottky Barrier Diode 100V . The low leakage current and low VF have been achieved by using the optimum barrier metal. ■Applications • DC-DC converters


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    MPEN-230AF Package---TO-262 100Vguarantee 0E-01 0E-02 0E-03 D01-006EA-051202 PDF

    KA2 DIODE

    Abstract: KA2 AND DIODE DK16LLD03
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate DIODE DK16LLD03 SWITCHING DIODE - WBFBP-03D TOP DESCRIPTION Epitaxial planar Silicon diode 1.0x1.0×0.5 unit: mm + FEATURES Fast Switching Speed Ultra-Small Surface Mount Package


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    WBFBP-03D DK16LLD03 WBFBP-03D 150mA KA2 DIODE KA2 AND DIODE DK16LLD03 PDF

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    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate DIODE DK4148TTD03 SWITCHING DIODE - WBFBP-03A TOP DESCRIPTION Epitaxial planar Silicon diode 1.6x1.6×0.5 unit: mm + FEATURES Fast Switching Speed Ultra-Small Surface Mount Package


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    WBFBP-03A DK4148TTD03 WBFBP-03A 150mA PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate DIODE DK4148LLD03 SWITCHING DIODE - WBFBP-03D TOP DESCRIPTION Epitaxial planar Silicon diode 1.0x1.0×0.5 unit: mm + FEATURES Fast Switching Speed Ultra-Small Surface Mount Package


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    WBFBP-03D DK4148LLD03 WBFBP-03D 150mA PDF

    MPN3412

    Abstract: MPN3411
    Text: MPN3411 SILICON PIN ATTENUATOR DIODE SILICON PIN ATTENUATOR DIODE . . . designed prim arily as a general purpose attenuator diode. S u p ­ plied in pop ular iow -inductance, M in i-L plastic package fo r low cost, high-volum e co n su m e r a n d industrial requirem ents.


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    MPN3411 MPN3412 MPN3411 PDF

    triac tic 236

    Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
    Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD


    OCR Scan
    1S2835 1S2836 1S2837 1S2838 1SS123 1SS220 1SS221 1SS222 1SS223 2SA811A triac tic 236 SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC PDF