Untitled
Abstract: No abstract text available
Text: P 600 A.P 600 S power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter 0, Axial lead diode Standard silicon rectifier diodes P 600 A.P 600 S : ; 4
|
Original
|
PDF
|
|
kuka
Abstract: ECONOPACK
Text: kuka-2003-inhalt.qxd 17.04.2003 IGBT 10:33 Uhr Seite 6 SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 6 Overview IGBT’s 2500 V 3300 V 6500 V IHV P [kW] P. 17 1200 V 1600 V 1700 V IHM P. 15 600 V 62 mm 1200 V 1700 V P. 10 600 V 1200 V 1700 V
|
Original
|
PDF
|
kuka-2003-inhalt
kuka
ECONOPACK
|
Econo PIM
Abstract: a1020 Econo SCR 600 911 DIODE Igbt 1200 1200
Text: IGBT SCR / Diode Modules Presspacks Stacks Outlines Accessories Explanations 4 Overview IGBT’s 2500 V 3300 V 6500 V IHV P [kW] P. 7-8 1200 V 1600 V 1700 V IHM P. 5-6 600 V 62 mm 1200 V 1700 V P. 9-11 600 V 1200 V 1700 V 34 mm P. 9-11 1200 V 1700 V Econo PACK+
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: WT-224DV06 Zener Diode Chips for ESD Bidrectional Protection 1. Feature: 1-1 chips, Device NO. WT-224DV06 2. Structure: 3. Size: 2-1. Planar type : N/P/N Diode. 2-2. Electrodes : Top side : Aluminum Alloy. Back side : Gold Layer. 3-1. Chip size : 24 mils x 24 mils 600 m x 600 μm .
|
Original
|
PDF
|
WT-224DV06
MIL-STD883
23-Dec-09
|
D06E60
Abstract: IDB06E60 Q67040-S4481 marking diode 6a diode 400V 6A IDP06E60 Q67040-S4480 400v 3a low vf diode smd code 6a marking DI SMD
Text: IDP06E60 IDB06E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 6 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.
|
Original
|
PDF
|
IDP06E60
IDB06E60
P-TO220-3
P-TO220-2-2.
Q67040-S4480
D06E60
D06E60
IDB06E60
Q67040-S4481
marking diode 6a
diode 400V 6A
IDP06E60
Q67040-S4480
400v 3a low vf diode
smd code 6a
marking DI SMD
|
D09E60
Abstract: Q67040-S4482 IDB09E60 IDP09E60 Q67040-S4483
Text: IDP09E60 IDB09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.
|
Original
|
PDF
|
IDP09E60
IDB09E60
P-TO220-3
P-TO220-2-2.
Q67040-S4483
D09E60
D09E60
Q67040-S4482
IDB09E60
IDP09E60
Q67040-S4483
|
D15E60
Abstract: IDP15E60 IDB15E60 Q67040-S4484 Q67040-S4485
Text: IDP15E60 IDB15E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 15 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.
|
Original
|
PDF
|
IDP15E60
IDB15E60
P-TO220-3
P-TO220-2-2.
Q67040-S4485
D15E60
D15E60
IDP15E60
IDB15E60
Q67040-S4484
Q67040-S4485
|
d45e60
Abstract: INFINEON D45E60 Q67040-S4375 IDP45E60 IDB45E60 Q67040-S4469
Text: IDP45E60 IDB45E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 45 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.
|
Original
|
PDF
|
IDP45E60
IDB45E60
P-TO220-3
P-TO220-2-2.
Q67040-S4469
D45E60
d45e60
INFINEON D45E60
Q67040-S4375
IDP45E60
IDB45E60
Q67040-S4469
|
D30E60
Abstract: IDP30E60 IDB30E60 diode 30a 400v
Text: IDP30E60 IDB30E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 30 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.
|
Original
|
PDF
|
IDP30E60
IDB30E60
P-TO220-3
P-TO220-2-2.
Q67040-S4488
D30E60
D30E60
IDP30E60
IDB30E60
diode 30a 400v
|
D23E60
Abstract: smd diode 46A IDB23E60 IDP23E60
Text: IDP23E60 IDB23E60 Fast Switching EmCon Diode Product Summary Feature • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge VRRM 600 V IF 23 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.
|
Original
|
PDF
|
IDP23E60
IDB23E60
P-TO220-3
P-TO220-2-2.
Q67040-S4486
D23E60
D23E60
smd diode 46A
IDB23E60
IDP23E60
|
Untitled
Abstract: No abstract text available
Text: P 600 A.P 600 S 0, Axial lead diode Standard silicon rectifier diodes P 600 A.P 600 S : ; 4 ; ; . +. 4 ; ; . ; ; , 8 ? 3 @ A B #: # ' / " % / #:+
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: P 600 A.P 600 S 0, Axial lead diode Standard silicon rectifier diodes P 600 A.P 600 S : ; 4 ; ; . +. 4 ; ; . ; ; , 8 ? 3 @ A B #: # ' / " % / #:+
|
Original
|
PDF
|
|
diode rectifier p 600
Abstract: No abstract text available
Text: P 600 A.P 600 S 0, Axial lead diode Standard silicon rectifier diodes P 600 A.P 600 S : ; 4 ; ; . +. 4 ; ; . ; ; , 8 ? 3 @ 9 A #: # ' / " % / #:+
|
Original
|
PDF
|
|
P600
Abstract: No abstract text available
Text: P 600 A.P 600 S 0, Axial lead diode Standard silicon rectifier diodes P 600 A.P 600 S : ; 4 ; ; . +. 4 ; ; . ; ; , 8 ? 3 @ A B #: # ' / " % / #:+
|
Original
|
PDF
|
|
|
|
60-06A
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED VRSM V 600 VRRM DSEI 60 IFAVM = 60 A VRRM = 600 V = 35 ns trr C A Type TO-247 AD V 600 DSEI 60-06A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM
|
Original
|
PDF
|
O-247
0-06A
60-06A
|
siemens igbt BSM 300
Abstract: Q67040-A4221-A2 BSM 214 A Q67040-A4222-A2 Q67040-A4225-A2 Q67040-A4228-A2 Q67040-A4229-A2 Q67040-A4230-A2 Q67040-A4420-A2 Q67040-A4423-A2
Text: Duo-Packs IGBT + antiparallele Diode Typ Type V BUP 400 D Duo-Packs (IGBT + antiparallel diode) A Bestellnummer Ordering Code Gehäuse Package Bild Figure 600 14.0 Q67040-A4423-A2 P-T0220-3-1 11b BUP 602 D 600 36.0 Q67040-A4229-A2 P-T0218-3-1 10b BUP 603 D
|
OCR Scan
|
PDF
|
Q67040-A4423-A2
P-TO220-3-1
Q67040-A4229-A2
P-T0218-3-1
Q67040-A4230-A2
Q67040-A4420-A2
P-T0220-3-1
Q67040-A4225-A2
siemens igbt BSM 300
Q67040-A4221-A2
BSM 214 A
Q67040-A4222-A2
Q67040-A4228-A2
|
6P060AS
Abstract: D-68623 6a600
Text: DSEP6 Fast Recovery Epitaxial Diode FRED 6A 600 V IFAVM V RRM - 20 ns t Preliminary Data V rs M V rrm V Type 600 600 TO-252AA (DPAK) M arking on p ro d u ct V D S E P 6-0 6 A S Cathode 6P 060A S Cathode (Flange) Anode♦ S ym bo l C onditions U rms U rm
|
OCR Scan
|
PDF
|
6-06AS
6P060AS
O-252AA
D-68623
6P060AS
6a600
|
24N60CD1
Abstract: diode p1000
Text: DIXYS HiPerFAST IGBT with Diode Lightspeed Series IXGH 24N60CD1 IXGT 24N60CD1 VCES ^C25 V CE sat = 600 V = 48 A = 2.5 V P relim inary data sheet Symbol Test Conditions V „„ Tj = 25° C to 150° C 600 V 600 V Continuous ±20 V Transient ±30 V Tc = 25° C
|
OCR Scan
|
PDF
|
24N60CD1
24N60CD1
O-268
O-247
diode p1000
|
B81 diode smd
Abstract: b81 004 IXGH20N60BU1 U 244
Text: HiPerFAST IGBT with Diode IXGH20N60BU1 IXGH20N60BU1S v CES ^C25 v CE sat typ *« = = = = 600 40 1.7 100 V A V ns P relim inary data Sym bol Test C onditions v CES v CGR T, = 25°C to 150°C 600 V Tj = 25°C to 150°C; RGE = 1 M£2 600 V Maximum Ratings
|
OCR Scan
|
PDF
|
IXGH20N60BU1
IXGH20N60BU1S
O-247
B2-35
B81 diode smd
b81 004
U 244
|
L5561
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET PHOTO DIODE MODULE N D L 5 5 6 1 P, N D L 5 5 6 1 P 1 , N D L 5 5 6 1 P 2 1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 0 80 nm InGaAs AVALANCHE PHOTO DIODE MODULE DESCRIPTION NDL5561P, NDL5561P1 and NDL5561P2 are InGaAs avalanche photo diode modules with m ultim ode fiber. They are
|
OCR Scan
|
PDF
|
NDL5561P,
NDL5561P1
NDL5561P2
NDL5561PC,
NDL5561P1C
NDL5561P2C.
L5561
|
SC26P
Abstract: SC12P sm 04 IPA75 sm 4500 SC19P
Text: 'Al'ACITOKS ELKCTROM« S fo r p o w er Snubber Capacitors & Modules SM series (Module for IGBT * Low-inductance & high-Q * Easy connecting eq u iva le n t circuit SM04 Type IG B T Diode rv c E S ] [V R R M ftoftrr] 600/150 600/10/0.05 Cap F] 1.5 V R /V P
|
OCR Scan
|
PDF
|
SC20P
SC40P
SC79P
SC19P
SC12P
SC26P
sm 04
IPA75
sm 4500
|
Untitled
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 20N60BU1 VCE sat typ 600 V 40 A 1.7 V t 100ns CES ^C25 P relim inary data Maximum Ratings Symbol Test Conditions VCES ^ = 25°C to 150°C 600 V VCGR T,J = 25°C to 150°C; RG t = 1 MQ 600 V V v GES Continuous ±20 V«„ T ransient
|
OCR Scan
|
PDF
|
20N60BU1
100ns
O-247
|
80N60AU1
Abstract: IXYS IGBT
Text: IXYS IGBT with Diode IXSN 80N60AU1 v CES ^C25 v CE sat = 600 V = 160 A = 3V oC Short Circuit SO A Capability G P relim inary data 04E Symbol Test Conditions V CES Tj - 25°C to 150°C 600 V v*C G R v GES v GEM Tj = 25CC to 150°C; RGE = 1 M ii 600 A Maximum Ratings
|
OCR Scan
|
PDF
|
80N60AU1
OT-227
E153432
80N60AU1
IXYS IGBT
|
ixgh10n60
Abstract: 10N60AU L1229 10n60au1
Text: ^C25 V v CE sat 20 A 20 A 2.5 V 3.0 V V CES Low V_c. IGBT with Diode CE(sat) High speed IGBT with Diode 600 V IX G A /IX G H 10N60U1 IX G A /IX G H 10N60AU1 600 V Combi Packs P relim in ary data Maximum Ratings Symbol Test Conditions vt c e s Tj = 25°C to 150°C
|
OCR Scan
|
PDF
|
IXGH10
N60U1
IXGH10N60AU1
O-263
O-247
10N60U1
10N60AU1
D94006DE,
T0-263
0D0223Ã
ixgh10n60
10N60AU
L1229
|
