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    DIODE PJ 72 Search Results

    DIODE PJ 72 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE PJ 72 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    pj diode

    Abstract: Diode marking code PJ PJ 75 pj 50 diode marking code pj diode pj marking code pj diode
    Text: BAW56WS HIGH-SPEED SWITCHING DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PJ Top View Marking Code: "PJ" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VRRM 85 V Reverse Voltage VR 75 V Continuous Forward Current


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    BAW56WS OD-323 OD-323 pj diode Diode marking code PJ PJ 75 pj 50 diode marking code pj diode pj marking code pj diode PDF

    diode pj

    Abstract: pj 50 diode marking code pj BAW56WS PJ diode marking code pj diode PJ 75 MM diode
    Text: BAW56WS HIGH-SPEED SWITCHING DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PJ Top View Marking Code: "PJ" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VRRM 85 V Reverse Voltage VR 75 V Continuous Forward Current


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    BAW56WS OD-323 OD-323 diode pj pj 50 diode marking code pj BAW56WS PJ diode marking code pj diode PJ 75 MM diode PDF

    CODE PJ

    Abstract: marking code pj diode pj BAW56WS PJ diode pj 50 diode marking code pj diode
    Text: BAW56WS HIGH-SPEED SWITCHING DIODE PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 PJ Top View Marking Code: "PJ" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VR 75 V VRRM 85 V IF 125 mA Repetitive Peak Forward Current


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    BAW56WS OD-323 OD-323 CODE PJ marking code pj diode pj BAW56WS PJ diode pj 50 diode marking code pj diode PDF

    pj 35 diode

    Abstract: DPG30P300PJ diode pj pj 50 diode PJ diode diode pj-039 IXYS DS 145 diode marking pj
    Text: DPG 30 P 300 PJ advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 300 V 30 A 35 ns 3 DPG 30 P 300 PJ Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips


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    O-273 60747and pj 35 diode DPG30P300PJ diode pj pj 50 diode PJ diode diode pj-039 IXYS DS 145 diode marking pj PDF

    diode pj-039

    Abstract: pj 50 diode PJ diode DIODE pj PJ 75 MM diode Diode marking code PJ DPG10P400PJ PJ 75 diode marking pj pj 45 diode
    Text: DPG 10 P 400 PJ advanced V RRM = I FAV = t rr = HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Phase leg Part number 1 2 400 V 10 A 45 ns 3 DPG 10 P 400 PJ Backside: isolated Features / Advantages: Applications: Package: ● Planar passivated chips


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    O-273 60747and diode pj-039 pj 50 diode PJ diode DIODE pj PJ 75 MM diode Diode marking code PJ DPG10P400PJ PJ 75 diode marking pj pj 45 diode PDF

    Diode SJ 56

    Abstract: diode sj pj+939+diode
    Text: SK50GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK50GD12T4T .5'( @BVV P WR K =' Q WV SJ XV K @RV K Z BV P =T Q @RV SJ @V _' =' Q BR SJ XV K =' Q WV SJ


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    SK50GD12T4T Diode SJ 56 diode sj pj+939+diode PDF

    pj 56 diode

    Abstract: semikron 3Y diode PJ diode ph9a
    Text: SK100GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK100GD12T4T .5'( @BVV P @BX K =' Q WV SJ @VV K CVV K Z BV P =T Q @RV SJ @V _' =' Q BR SJ @VB K =' Q WV SJ


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    SK100GD12T4T pj 56 diode semikron 3Y diode PJ diode ph9a PDF

    pj 72 diode

    Abstract: Diode SJ 12 pj 86 diode Diode SJ
    Text: SK75GD12T4T =' Q BR SJA -%2&'' ,.8& */'& '5& /E/&1 Absolute Maximum Ratings Symbol Conditions IGBT PJ:9 =T Q BR SJ <J =T Q @WR SJ <JY; SEMITOP 4 IGBT Module SK75GD12T4T .5'( @BVV P @VB K =' Q WV SJ X@ K BBR K Z BV P =T Q @RV SJ @V ^' =' Q BR SJ XC K =' Q WV SJ


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    SK75GD12T4T pj 72 diode Diode SJ 12 pj 86 diode Diode SJ PDF

    LC72316W

    Abstract: No abstract text available
    Text: Ordering number : ENN*6650 CMOS IC LC72314W, 72315W, 72316W Ultralow-Voltage ETR Controller with On-Chip LCD Driver Preliminary Continued on next page. Package Dimensions unit: mm 3220-SQFP80 [LC72314W, 72315W, 72316W] 1.25 14.0 12.0 0.5 60 0.135 1.25 41 61


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    LC72314W, 2315W, 2316W 3220-SQFP80 2316W] LC72314W LC72315W LC72316W LC72316W PDF

    pj 69 diode

    Abstract: S2445 PJ 63 diode S2049 LC72316W
    Text: Ordering number : ENN*6650 CMOS IC LC72314W, 72315W, 72316W Ultralow-Voltage ETR Controller with On-Chip LCD Driver Preliminary Continued on next page. Package Dimensions unit: mm 3220-SQFP80 [LC72314W, 72315W, 72316W] 1.25 14.0 12.0 0.5 60 0.135 1.25 41 61


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    LC72314W, 2315W, 2316W 3220-SQFP80 2316W] LC72314W LC72315W LC72316W pj 69 diode S2445 PJ 63 diode S2049 LC72316W PDF

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


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    T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode PDF

    CSR 8510

    Abstract: CSR 8510 hardware MDR771F CSR BLUECORE VIRTUAL MACHINE csr pskey AUTHENTICATION COPROCESSOR 2.0C CSR 8510 bluetooth BC31A223A CSR USB SPI converter csr schematic usb to spi
    Text: _äìÉ`çêÉ»PJ^ìÇáç=cä~ëÜ Device Features ! Fully Qualified Bluetooth system ! Bluetooth v.1 and v1.2 specification compliant ! Full-speed Bluetooth operation with piconet and scatternet support ! 6Mbit on-chip flash BC31A223A ! Low-power 1.8V operation


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    BC31A223A BC31A223B 96-ball 15-bit BC31A223B BC31A223A-ds-001Pp CSR 8510 CSR 8510 hardware MDR771F CSR BLUECORE VIRTUAL MACHINE csr pskey AUTHENTICATION COPROCESSOR 2.0C CSR 8510 bluetooth BC31A223A CSR USB SPI converter csr schematic usb to spi PDF

    pj 72 diode

    Abstract: MARKING VNN
    Text: HV20720 Dual 1 of 4 High Voltage Analog Switch Features ► ► ► ► ► ► ► ► ► General Description The Supertex HV207 is an 8-channel high-voltage analog switch integrated circuit IC configured as a dual 1 of 4 analog switch. The 2 sets of 4 analog switches


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    HV20720 20MHz -58dB HV207 MS-018, HV20720 A102207 pj 72 diode MARKING VNN PDF

    I2C dma applications msp430

    Abstract: MSP430FR5969 MSP430FR5949IRHA 5E002 SLAU367
    Text: ECCN 5E002 TSPA - Technology / Software Publicly Available MSP430FR59xx MSP430FR58xx www.ti.com SLAS704 – OCTOBER 2012 MIXED SIGNAL MICROCONTROLLER FEATURES • • Embedded Microcontroller – 16-Bit RISC Architecture up to 16‑‑MHz Clock – Wide Supply Voltage Range 1.8 V to 3.6 V


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    5E002 MSP430FR59xx MSP430FR58xx SLAS704 16-Bit 16MHz I2C dma applications msp430 MSP430FR5969 MSP430FR5949IRHA SLAU367 PDF

    SLAU320

    Abstract: SLAU367 MSP430FR5949 MSP430FR5969IRGZ MSP430FR5869 SLAS704 MSP430FR5847IRHA MSP430FR5969 MSP430FR5949IRHA 09C0H
    Text: ECCN 5E002 TSPA - Technology / Software Publicly Available MSP430FR59xx MSP430FR58xx www.ti.com SLAS704 – OCTOBER 2012 MIXED SIGNAL MICROCONTROLLER FEATURES • • Embedded Microcontroller – 16-Bit RISC Architecture up to 16‑‑MHz Clock – Wide Supply Voltage Range 1.8 V to 3.6 V


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    5E002 MSP430FR59xx MSP430FR58xx SLAS704 16-Bit 16MHz SLAU320 SLAU367 MSP430FR5949 MSP430FR5969IRGZ MSP430FR5869 SLAS704 MSP430FR5847IRHA MSP430FR5969 MSP430FR5949IRHA 09C0H PDF

    pj 86 diode

    Abstract: pj 84 diode pj 48 diode PJ 63 diode ke92 Westinghouse diode WESTINGHOUSE ELECTRIC motor ac WESTINGHOUSE dc motor KE924503 pj 17 diode
    Text: 7294621 POWEREX INC Tâ Dim A B C D E F G H J K L M N O P Q R S T U V w X y b Ë J 72TML51 ODODTSO t. Inches 3.70 3.150+,020 .768 .79 .394 3.386 2.913 2.48 1.89 .472 .236 .118 .197 .551 .709 .059 .217 1.50 1.22 1.181 .339 .118 .295 T-33-35 Millimeters 94 80±.25


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    72TML51 T-33-35 KE92450310 33I35 pj 86 diode pj 84 diode pj 48 diode PJ 63 diode ke92 Westinghouse diode WESTINGHOUSE ELECTRIC motor ac WESTINGHOUSE dc motor KE924503 pj 17 diode PDF

    Untitled

    Abstract: No abstract text available
    Text: 5ôl2b 72 GGGM70tl 733 3mm IR Detectors Photo Diode Dîalïght 551-771 Features • • • • • 11001 -‘•IU UJ — 4* A -ty - ^ J -tp r 2.54 [100] 1 3 3 0 . .525] MAX ► Short Switching Time High Spectral Sensitivity Daylight Filtered for Near Infra-Red Range


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    GGGM70tl -55to MIL-STD-202E, PDF

    pj 72 diode

    Abstract: pj 49 diode pj 44 diode ic 7pin dip PWM Converter pj 89 diode 9v 200 ohm relay P248L VP0808 vp1550 pj 85 lv
    Text: Chapter S: Product Selector Guides Chapter Product Selector Guides 1. Hotswap Controller ICs/lnrush Current Limiters/Circuit Breaker IC s. 248 2. LED Driver IC s .


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    VP1550 VP2106 VP2110 VP2206 VP2450 VP3203 TC2320 -200V pj 72 diode pj 49 diode pj 44 diode ic 7pin dip PWM Converter pj 89 diode 9v 200 ohm relay P248L VP0808 pj 85 lv PDF

    pj 89 diode

    Abstract: HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode
    Text: M Supertex m e. Selector Guides MOSFETs S upertex enhancem ent- and depletion-m ode MOSFETs, utilizing vertical and lateral double-diffused processes, are suitable for a w ide variety of applications. They feature low capacitance for ease of drive and low gate-source threshold voltages fo r direct


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    OT-23 TN2101K1 TN2106K1 TN2124K1 TP2106K1 VN2110K1 VP2110K1 -10ack HV9111 HV9112 pj 89 diode HV7708PG HV7808 pj 44 diode HV5808 VQ10003 VN 300 tp2106 220v ac to 9v dc converter pj 56 diode PDF

    pj 67 diode

    Abstract: No abstract text available
    Text: 3TE T> • POÜIEREX INC 72=]4bSl DGDSGBT 7 ■ PRX 7 -.3 5 .pj m m tE X Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107,72003 Le Mans, France (43) 41.14.14 REVERSE CONDUCTING GTO THYRISTORS


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    BP107 FGR2000BH40 4x105 FGR2000BH50 FGR2000BV pj 67 diode PDF

    pj 89 diode

    Abstract: LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89
    Text: Supertexinc. Short Form Catalog '96 High Voltage Integrated Circuits and DMOS Transistors Supertex inc. Leadership in CMOS/D MOS Technologies Supertex, Inc. designs, develops, manufactures, and markets quality semiconductor products for use in data processing, tele­


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    O-220 O-243 OT-89) OT-23 20-Terminal pj 89 diode LR645 equivalent FED-STD-209 pj 54 diode TN0110 equivalent pj 57 diode CCW SOT23 HV5808 220v ac to 12V 20A SMPS high-frequency control sot-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: Fast Switching SCR T7SH _ _ 4 6 Symbol <pO <PD, 0D 2 H <pj L N Inches Min. 1.850 1.140 1.760 .545 .135 .072 7.75 .025 Max. 1 900 1.180 1.850 605 .145 .082 8.50 4 6 0 A Avg. 7 2 0A R M S 1400-1800 Volts 80-100yusec M illim eters Min. Max. 45 72 48.26 2896 2997


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    80-100yusec 00A//7sec) 00A//usec) PDF

    scr t9Gh_ _08

    Abstract: t9gh
    Text: 8 0 0 A Avg. 1250 RMS Up to 2 0 0 0 Volts 5 0 -1 0 0 fJis Fast Switching SCR T9G H.J08 Symbol <pD <PD, 0D 2 H <pj Ji L N M illim eters Inches Max. Min. Max. Min. 72.39 73.66 2.850 2.900 46.86 47.12 1.845 1.855 65.02 67.06 2.560 2.640 26.16 27.18 1.030 1.070


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    PDF

    pj 56 diode

    Abstract: pj 72 diode pj 29 diode pj 48 diode MIL-S-19500 FOR POWER LINE TRANSISTOR WNJ 425
    Text: O M 6234S D /S M O M 6236S D /S M O M 6238S D /S M O M 6240S D /S M O M 6235S D /S M O M 6237S D /S M O M 6239S D /S M OM6241 SD /SM DUAL POWER MOSFETS IN HERMETIC ISOLATED DUAL IN-LINE PACKAGES 100V Thru 500V, Dual High Current, N-Channel MOSFETs FEATURES


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    OM6234SD/SM OM6236SD/SM OM6238SD/SM OM6240SD/SM OM6235SD/SM OM6237SD/SM OM6239SD/SM OM6241 MIL-S-19500, OM6234 pj 56 diode pj 72 diode pj 29 diode pj 48 diode MIL-S-19500 FOR POWER LINE TRANSISTOR WNJ 425 PDF