SM4001-SM4007
Abstract: J17G
Text: SM 4001.SM 4007 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter /5 Surface mount diode Standard silicon rectifier diodes SM 4001.SM 4007 5
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Untitled
Abstract: No abstract text available
Text: SUF 4001 . SUF 4007 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module /5 Surface mount diode Ultrafast silicon rectifier diodes SUF 4001 . SUF 4007 5 0
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Untitled
Abstract: No abstract text available
Text: 1N 4001.1N 4007, 1N 4007-1300 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter ,2 Axial lead diode Standard silicon rectifier diodes 1N 4001.1N 4007, 1N 4007-1300 8 9 3 9 9 +
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Untitled
Abstract: No abstract text available
Text: UF 4001.UF 4007, UF 4007-1200 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter -3 Axial lead diode Ultrafast silicon rectifier diodes UF 4001.UF 4007, UF 4007-1200 8 9 4 9 9 +
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85713
Abstract: 85713 B SF4004 SF4007
Text: VISHAY SF400X_PSpice Vishay Semiconductors SF400X Spice Parameters SF 4001 .SF4004 SF 4005 .SF4007 * Technology: DISCRETE DEVICE * Device: Rectifier Diode SF4004 * Description: * Type: Typical nom * Subcircuit: 16.12.1996, by S.Reuter, TM1iC63-HN * Remarks:
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SF400X
SF4004
SF4007
TM1iC63-HN
SF4004
85713
85713 B
SF4007
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DO-213AB 4007
Abstract: 4007 diode do-213AB melf diodes color DO213-AB color band 4003 diode rectifier DO-213AB diode rectifier 4001 DIODE 4005 SM4001-SM4007 IN 4004 diodes
Text: SM 4001.SM 4007 Type Polarity color band Repetitive peak reverse voltage Surge peak reverse voltage Maximum forward voltage Tj = 25 °C Maximum reverse recovery time IF = 1 A IF = - A IR = - A IRR = - A VRRM Surface mount diode Standard silicon rectifier
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DO-213AB
diagramme/21/sm4001
DO-213AB 4007
4007 diode do-213AB
melf diodes color
DO213-AB color band
4003 diode rectifier
DO-213AB
diode rectifier 4001
DIODE 4005
SM4001-SM4007
IN 4004 diodes
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T161-160
Abstract: SCR T161-160 t153-630 KP25A T123-250 tc171 ZP50A T143-630 SCR KP200A T151-100
Text: Company Profile GREEGOO Electric Co., Ltd, located in Wenzhou, the electric capital of China, is specialized in developing, manufacturing and distributing phase control thyristors, rectifier diodes, high frequency thyristors, fast recovery diode and fast switching thyristors along with about 300 components.
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ISO9001
to300
SF15CL
500Aelement
T161-160
SCR T161-160
t153-630
KP25A
T123-250
tc171
ZP50A
T143-630 SCR
KP200A
T151-100
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1N6757
Abstract: lm 4011 MIL-PRF19500 1N675
Text: INCH-POUND MIL-PRF-19500/641 1 April 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GALLIUM ARSENIDE, POWER RECTIFIER, TYPE 1N6757, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-PRF-19500/641
1N6757,
MIL-PRF-19500.
O-257AA)
1N6757
1N6757
lm 4011
MIL-PRF19500
1N675
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1N6840
Abstract: 1N6840U3 1N6841 1N6841U3 MIL-PRF19500 smd code marking pk oh SMD diode MARKING CODE Z2 MARKING CODE LR1 DIODE
Text: INCH-POUND MIL-PRF-19500/678 1 July 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON,DUAL SCHOTTKY CENTER TAP POWER RECTIFIER, SURFACE MOUNTED, TYPES 1N6840U3 AND 1N6841U3, JAN, JANTX, JANTXV, JANS This specification is approved for use by all Departments
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MIL-PRF-19500/678
1N6840U3
1N6841U3,
MIL-PRF-19500.
1N6840
1N6841
1N6840
1N6841
1N6841U3
MIL-PRF19500
smd code marking pk oh
SMD diode MARKING CODE Z2
MARKING CODE LR1 DIODE
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1n6831
Abstract: 1N6826US 1N6826 MIL-PRF19500 1N6831US
Text: INCH-POUND MIL-PRF-19500/670 19 June 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER, SCHOTTKY BARRIER, TYPES 1N6826, 1N6826US, 1N6831 and 1N6831US JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments
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MIL-PRF-19500/670
1N6826,
1N6826US,
1N6831
1N6831US
MIL-PRF-19500,
1N6826US
1N6826
MIL-PRF19500
1N6831US
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1N6688
Abstract: 1N6689 MIL-STD-129 1N6689US
Text: The documentation process conversion measures necessary to comply with this revision shall be completed by 25 September 1997 INCH POUND MIL-PRF-19500/627A 25 June 1997 SUPERSEDING MIL-S-19500/627 18 November 1994 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
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MIL-PRF-19500/627A
MIL-S-19500/627
1N6688,
1N6689,
1N6688US,
1N6689US,
MIL-PRF-19500.
1N6688
1N6689
MIL-STD-129
1N6689US
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lm 4011
Abstract: MIL-PRF19500 1N6753 1N675
Text: INCH-POUND MIL-PRF-19500/640 21 October 1996 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, GALLIUM ARSENIDE, POWER RECTIFIER, COMMON CATHODE TYPE 1N6753, JANTX, JANTXV, AND JANS This specification is approved for use by all Departments and Agencies of the Department of Defense.
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MIL-PRF-19500/640
1N6753,
MIL-PRF-19500.
O-257AA)
1N6753
lm 4011
MIL-PRF19500
1N6753
1N675
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Untitled
Abstract: No abstract text available
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 31 January 2014. MIL-PRF-19500/645D 31 October 2013 SUPERSEDING MIL-PRF-19500/645C 24 August 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
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MIL-PRF-19500/645D
MIL-PRF-19500/645C
1N6772,
1N6773,
1N6772R
1N6773R
MIL-PRF-19500.
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1N6664 R
Abstract: No abstract text available
Text: * METRIC The documentation and process conversion measures necessary to comply shall with this document shall be completed by 3 March 2011. * MIL-PRF-19500/594B 3 December 2010 SUPERSEDING MIL-PRF-19500/594A 3 July 1998 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
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MIL-PRF-19500/594B
MIL-PRF-19500/594A
1N6664
1N6666,
1N6664R
1N6666R,
MIL-PRF-19500.
1N6664 R
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1N6773R
Abstract: JAN1N6772 JAN1N6772R 1N6772 1N6772R 1N6773
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 November 2007. MIL-PRF-19500/645C 24 August 2007 SUPERSEDING MIL-PRF-19500/645B 24 October 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
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MIL-PRF-19500/645C
MIL-PRF-19500/645B
1N6772,
1N6773,
1N6772R
1N6773R
MIL-PRF-19500.
1N6773R
JAN1N6772
JAN1N6772R
1N6772
1N6773
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schottky diode 100A inventory
Abstract: 1N6930UTK1 JS6930 1N6932UTK1 BT 342 project 1N693 ms 1051 1n6930
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 December 2005. MIL-PRF-19500/725A 7 September 2005 SUPERSEDING MIL-PRF-19500/725 28 October 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER,
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MIL-PRF-19500/725A
MIL-PRF-19500/725
1N6930UTK1,
1N6931UTK1,
1N6932UTK1,
1N6930UTK1CS,
1N6931UTK1CS,
1N6932UTK1CS,
1N6930UTK1AS,
1N6931UTK1AS,
schottky diode 100A inventory
1N6930UTK1
JS6930
1N6932UTK1
BT 342 project
1N693
ms 1051
1n6930
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Untitled
Abstract: No abstract text available
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 July 2007. MIL-PRF-19500/503E 11 April 2007 SUPERSEDING MIL-PRF-19500/503D 27 December 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
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MIL-PRF-19500/503E
MIL-PRF-19500/503D
1N6073
1N6081,
MIL-PRF-19500.
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Untitled
Abstract: No abstract text available
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September 2013. MIL-PRF-19500/647E 21 June 2013 SUPERSEDING MIL-PRF-19500/647D 5 November 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
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MIL-PRF-19500/647E
MIL-PRF-19500/647D
1N6778
1N6779,
MIL-PRF-19500.
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1N6910
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 12 January 2012. INCH-POUND MIL-PRF-19500/723C 12 October 2011 SUPERSEDING MIL-PRF-19500/723B 28 February 2011 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER,
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MIL-PRF-19500/723C
MIL-PRF-19500/723B
1N6910UTK2,
1N6911UTK2,
1N6912UTK2,
1N6910UTK2CS,
1N6911UTK2CS,
1N6912UTK2CS,
1N6910UTK2AS,
1N6911UTK2AS,
1N6910
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DIODE 1N649
Abstract: diode 351 1N649 JANTX diode 1n645 1N649-1 JANTX 1N647-1 JANTX equivalent 1N647-1 1N647-1 JANTXV 1N649-1 1N649UR1 JAN
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 13 November 2009. MIL-PRF-19500/240R 13 August 2009 SUPERSEDING MIL-PRF-19500/240P 5 September 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER,
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MIL-PRF-19500/240R
MIL-PRF-19500/240P
1N645-1,
1N647-1,
1N649-1,
1N645UR-1,
1N647UR-1,
1N649UR-1,
MIL-PRF-19500.
DIODE 1N649
diode 351
1N649 JANTX
diode 1n645
1N649-1 JANTX
1N647-1 JANTX equivalent
1N647-1
1N647-1 JANTXV
1N649-1
1N649UR1 JAN
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BT 342 project
Abstract: 1N692 1N6920UTK2 1n6920
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 December 2005. MIL-PRF-19500/724A 7 September 2005 SUPERSEDING MIL-PRF-19500/724 28 October 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER,
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MIL-PRF-19500/724A
MIL-PRF-19500/724
1N6920UTK4,
1N6921UTK4,
1N6922UTK4,
1N6920UTK4CS,
1N6921UTK4CS,
1N6922UTK4CS,
1N6920UTK4AS,
1N6921UTK4AS,
BT 342 project
1N692
1N6920UTK2
1n6920
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JANTX1N6779
Abstract: 1N6778 1N6779 JAN1N6778 JANTX1N6778 JANTXV1N6778 647c
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 February 2007. MIL-PRF-19500/647D 5 November 2007 SUPERSEDING MIL-PRF-19500/647C 4 August 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,
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MIL-PRF-19500/647D
MIL-PRF-19500/647C
1N6778
1N6779,
MIL-PRF-19500.
JANTX1N6779
1N6779
JAN1N6778
JANTX1N6778
JANTXV1N6778
647c
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1N6873
Abstract: 1N6875UTK2 1n6872 1N687 1N6872UTK2AS MIL PRF 19500 diode thermal profile 1n6875 1N6874UTK2 BT 342 project 1N6874UTK2CS
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 December 2005. * MIL-PRF-19500/719A 7 September 2005 SUPERSEDING MIL-PRF-19500/719 28 October 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER,
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MIL-PRF-19500/719A
MIL-PRF-19500/719
1N6872UTK2,
1N6873UTK2,
1N6874UTK2,
1N6875UTK2,
1N6872UTK2AS,
1N6873UTK2AS,
1N6874UTK2AS,
1N6875UTK2AS,
1N6873
1N6875UTK2
1n6872
1N687
1N6872UTK2AS
MIL PRF 19500 diode thermal profile
1n6875
1N6874UTK2
BT 342 project
1N6874UTK2CS
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ir21015
Abstract: 1N688 1N6882UTK4 1n6885 1N6884UTK4CS BT 342 project 1n6882 MIL PRF 19500 diode thermal profile
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 7 December 2005. MIL-PRF-19500/720A 7 September 2005 SUPERSEDING MIL-PRF-19500/720 28 October 2003 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY RECTIFIER,
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MIL-PRF-19500/720A
MIL-PRF-19500/720
1N6882UTK4,
1N6883UTK4,
1N6884UTK4,
1N6885UTK4,
1N6882UTK4CS,
1N6883UTK4CS,
1N6884UTK4CS,
1N6885UTK4CS,
ir21015
1N688
1N6882UTK4
1n6885
1N6884UTK4CS
BT 342 project
1n6882
MIL PRF 19500 diode thermal profile
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