BAY135
Abstract: BAY13
Text: BAY135 Vishay Telefunken Silicon Planar Diode Features D Very low reverse current Applications 94 9367 Protection circuits, delay circuits Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage, non repetitive Repetitive peak reverse voltage Reverse voltage
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BAY135
18-Mar-99
D-74025
BAY135
BAY13
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SB1540TL
Abstract: No abstract text available
Text: SB1520TL.SB15100TL Type Axial Lead Diode Schottky barrier rectifier diodes Forward Current: 15 A Reverse Voltage: 20 to 100 V SB1520TL.SB15100TL Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage Max.
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SB1520TL.
SB15100TL
1520TL
1530TL
SB15100TL
1540TL
1545TL
1550TL
1560TL
SB1540TL
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SB 1540 Diode
Abstract: f 1540 SB
Text: SB 1520 . SB 15100 Type Axial Lead Diode Schottky barrier rectifier diodes Forward Current: 15 A Reverse Voltage: 20 to 100 V SB 1520 . SB 15100 Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage
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Untitled
Abstract: No abstract text available
Text: SB 1520S . SB 15100S Type Axial Lead Diode Schottky barrier rectifier diodes Forward Current: 15 A Reverse Voltage: 20 to 100 V SB 1520S . SB 15100S Repetitive peak reverse voltage Surge peak reverse voltage Max. reverse recovery time Max. forward voltage
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1520S
15100S
1520S
1530S
15100S
1540S
1545S
1550S
1560S
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DIODE S4 Schottky SOD-323
Abstract: DIODE marking S4 sod diode SOD-323 S4 DIODE schottky SD103CWS SD103AWS SD103BWS diode s6 28 diode x sod 323
Text: SOD-323 Plastic-Encapsulate Diode SD103AWS-SD103CWS SCHOTTKY DIODE SOD-323 Features • · 1.00 Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance 1.70 1.30 Marking: SD103AWS:S4
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OD-323
SD103AWS-SD103CWS
OD-323
SD103AWS
SD103BWS
SD103CWS
SD103AWS
SD103BWS
SD103CWS
DIODE S4 Schottky SOD-323
DIODE marking S4 sod
diode SOD-323
S4 DIODE schottky
diode s6 28
diode x sod 323
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode SD103AWS-SD103CWS SCHOTTKY DIODE SOD-323 Features • · 1.00 Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance
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OD-323
SD103AWS-SD103CWS
OD-323
SD103AWS
SD103BWS
SD103CWS
SD103AWS
SD103BWS
SD103CWS
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diode SD103AW-SD103CW SCHOTTKY DIODE SOD-123 Features 1.05 • · Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance
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OD-123
SD103AW-SD103CW
OD-123
SD103AW
SD103BW
SD103CW
SD103AW
SD103BW
SD103CW
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD SD103AWS DIODE SCHOTTKY BARRIER SWITCHING DIODE FEATURES * Low Forward Voltage Drop * Fast Switching * Negligible Reverse Recovery Time * Low Reverse Capacitance * Designed for Surface Mount Application * PN Junction Guard Ring for Transient and ESD Protection
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SD103AWS
SD103AWSL-CB2-R
SD103AWSG-CB2-R
OD-323
QW-R601-082
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Untitled
Abstract: No abstract text available
Text: RECTRON SD103CW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 20 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA
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SD103CW
OD-123
MIL-STD-202E
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Untitled
Abstract: No abstract text available
Text: RECTRON SD103AW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 40 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA
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SD103AW
OD-123
MIL-STD-202E
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SD103CW
Abstract: No abstract text available
Text: RECTRON SD103CW SEMICONDUCTOR TECHNICAL SPECIFICATION SMALL SIGNAL DIODE VOLTAGE RANGE 20 Volts FEATURES * * * * Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance SOD-123 MECHANICAL DATA
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SD103CW
OD-123
MIL-STD-202E
SD103CW
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Untitled
Abstract: No abstract text available
Text: LTC4359 Ideal Diode Controller with Reverse Input Protection FEATURES n n n n n n n DESCRIPTION Reduces Power Dissipation by Replacing a Power Schottky Diode Wide Operating Voltage Range: 4V to 80V Reverse Input Protection to – 40V Low 9µA Shutdown current
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LTC4359
LT4256
LTC4260
LTC4223-1/LTC4223-2
4359f
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RB520S-40
Abstract: No abstract text available
Text: RB520S40 SURFACE MOUNT SCHOTTKY BARRIER DIODE SOD-523 VOLTAGE FEATURES Unit：inch mm • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time 0.050(1.25) 0.045(1.15) • Low Reverse Capacitance
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RB520S40
2002/95/EC
IEC61249
OD-523
OD-523,
MIL-STD-750,
RB520S-40
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Untitled
Abstract: No abstract text available
Text: RB520S40 SURFACE MOUNT SCHOTTKY BARRIER DIODE SOD-523 VOLTAGE FEATURES Unit：inch mm • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time 0.050(1.25) 0.045(1.15) • Low Reverse Capacitance
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RB520S40
OD-523
2011/65/EU
IEC61249
OD-523,
MIL-STD-750,
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24V dual-coil brushless fan regulator circuit
Abstract: BOP 286 24v DC motor dc motor for 24v 4 pin hall marking code 6 "DC Motor" 4 pin hall sensor DC MOTOR 24v Dual Complementary Darlington Power Supply electric motor brushes 24v dc
Text: AH266 High Voltage Hall Effect Latch General Description Features - On-chip Hall plate - Operating voltage: 4V~28V - Output current: 400mA Continuous, 25oC - Reverse protection diode only for chip reverse power connecting (Note) - Output protection Zener breakdown Vz=62V(Typ)
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AH266
400mA
AH266
971mm
046mm
24V dual-coil brushless fan regulator circuit
BOP 286
24v DC motor
dc motor for 24v
4 pin hall marking code 6
"DC Motor"
4 pin hall sensor
DC MOTOR 24v
Dual Complementary Darlington Power Supply
electric motor brushes 24v dc
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BOP 286
Abstract: ATS266 BRUSHLESS DC MOTOR an 132 hall sensor
Text: ATS266 High Voltage Hall Effect Latch Features General Description - On-chip Hall plate - Operating voltage: 4V~28V - Output current: 400mA Continuous - Reverse protection diode only for chip reverse power connecting (Note) - Output protection Zener breakdown Vz=56V(Typ)
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ATS266
400mA
ATS266
BOP 286
BRUSHLESS DC MOTOR
an 132 hall sensor
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Untitled
Abstract: No abstract text available
Text: SD103AW/BW/CW 0.35A Schottky Barrier Switching Diode Voltage range 20-40 Volts 400mW Power Dissipation SOD-123 FEATURES 0.022 0.55 Typ. Min. Low forward voltage drop Guard ring construction for transient protection Negligible reverse recovery time Low reverse capacitance
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SD103AW/BW/CW
400mW
OD-123
OD-123,
SD103AW
SD103BW
SD103CW
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hall sensor 4-pin SIP
Abstract: 24V DC brushless fan regulator circuit AH266 circuit diagram of hall effect
Text: AH266 High Voltage Hall Effect Latch Features General Description - On-chip Hall plate - Operating voltage: 4V~28V - Output current: 400mA Continuous, 25oC - Reverse protection diode only for chip reverse power connecting (Note) - Output protection Zener breakdown Vz=62V(Typ)
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AH266
400mA
AH266
971mm
046mm
hall sensor 4-pin SIP
24V DC brushless fan regulator circuit
circuit diagram of hall effect
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ZHCS2000
Abstract: Schottky Diode 40V 2A ZHCS2000TA ZHCS2000TC DSA003728
Text: ZHCS2000 40V SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE SUMMARY VR=40V; IC= 2A DESCRIPTION A surface mount Schottky Barrier Diode featuring low forward voltage drop suitable for high frequency rectification and reverse voltage protection. FEATURES SOT23-6
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ZHCS2000
OT23-6
ZHCS2000TA
ZHCS2000TC
ZHCS2000
Schottky Diode 40V 2A
ZHCS2000TA
ZHCS2000TC
DSA003728
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XBS206S17R
Abstract: XBS206
Text: XBS206S17R-G ETR1613-002a Schottky Barrier Diode, 2A, 60V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.615V TYP. ●Rectification Forward Current : IF(AVE)=2A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage
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XBS206S17R-G
ETR1613-002a
XBS206S17R
XBS206
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XBS204
Abstract: No abstract text available
Text: XBS204S17R-G ETR1612-002a Schottky Barrier Diode, 2A, 40V Type •APPLICATIONS ■FEATURES Forward Voltage : VF=0.485V TYP. ●Rectification Forward Current : IF(AVE)=2A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage
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XBS204S17R-G
ETR1612-002a
204S17
XBS204
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XBS303V17R-G
Abstract: XBS303V17R XBS30
Text: XBS303V17R-G ETR1614-001a Schottky Barrier Diode, 3A, 30V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.355V TYP. ●Rectification Forward Current : IF(AVE)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage
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XBS303V17R-G
ETR1614-001a
XBS303V17R-G
XBS303V17R
XBS30
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XBS304S17R-G
Abstract: ETR1615-002a XBS30 304S17
Text: XBS304S17R-G ETR1615-002a Schottky Barrier Diode, 3A, 40V Type •FEATURES ■APPLICATIONS Forward Voltage : VF=0.465V TYP. ●Rectification Forward Current : IF(AVE)=3A ●Protection against reverse connection of battery Repetitive Peak Reverse Voltage
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XBS304S17R-G
ETR1615-002a
XBS304S17R-G
ETR1615-002a
XBS30
304S17
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Untitled
Abstract: No abstract text available
Text: BAY135 V IS HAY Vishay Telefunken Silicon Planar Diode Features • Very low reverse current % Applications Protection circuits, delay circuits Absolute Maximum Ratings Tj = 25° C Parameter Peak reverse voltage, non repetitive Repetitive peak reverse voltage
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OCR Scan
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BAY135
18-Mar-99
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