p-channel 250V 30A power mosfet
Abstract: PN channel MOSFET 10A AK2501E
Text: AK2501E 250V N-Channel + P-Channel ESD-Protected MOSFET General Features t ESD Improved Capability Low ON Resistance Fast Switching RoHS Compliant/Lead Free Small Surface Mount Package SOP8 ee ¾ ¾ ¾ ¾ ¾ Applications High Efficiency SMPS DC/DC Converter
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AK2501E
p-channel 250V 30A power mosfet
PN channel MOSFET 10A
AK2501E
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diode ry 10 A
Abstract: No abstract text available
Text: FTU03N25E 250V N-Channel ESD-Protected MOSFET General Features BVDSS RDS ON (Max.) ID 250V 1.5Ω 3.0A t ESD Improved Capability Low ON Resistance Low Gate Charge (typical ?nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free ee ¾ ¾ ¾ ¾
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FTU03N25E
O-251IPAK
diode ry 10 A
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ftu02p
Abstract: No abstract text available
Text: FTU02P25E 250V P-Channel ESD-Protected MOSFET General Features BVDSS RDS ON (Max.) ID -250V 3.7Ω -2.0A t ESD Improved Capability Low ON Resistance Low Gate Charge (typical ?nC) Fast Switching 100% Avalanche Tested RoHS Compliant/Lead Free ee ¾ ¾ ¾ ¾
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FTU02P25E
-250V
O-251IPAK
ftu02p
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18P4G
Abstract: 20P2N-A M63817FP M63817KP M63817P
Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63817P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63817P/FP/KP are eight-circuit Single transistor arrays
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M63817P/FP/KP
300mA
M63817P/FP/KP
18P4G
20P2N-A
M63817FP
M63817KP
M63817P
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18P4G
Abstract: 20P2N-A M63815FP M63815KP M63815P
Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63815P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63815P/FP/KP are eight-circuit Single transistor arrays
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M63815P/FP/KP
300mA
M63815P/FP/KP
18P4G
20P2N-A
M63815FP
M63815KP
M63815P
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M63816FP
Abstract: 18P4G 20P2N-A M63816KP M63816P
Text: RY A N I . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> M63816P/FP/KP IM REL P 8-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63816P/FP/KP are eight-circuit Single transistor arrays
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M63816P/FP/KP
300mA
M63816P/FP/KP
M63816FP
18P4G
20P2N-A
M63816KP
M63816P
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M63814FP
Abstract: M63814GP M63814KP M63814P
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63814P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63814P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN
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M63814P/FP/GP/KP
300mA
M63814P/FP/GP/KP
M63814FP
M63814GP
M63814KP
M63814P
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GP 015 DIODE
Abstract: GP 005 DIODE GP 250 DIODE M63813FP M63813GP M63813KP M63813P
Text: MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY> RY A N I M63813P/FP/GP/KP . . tion nge ifica to cha pec t al s subjec in f ot a are is n limits This ric ice: ramet t o N e pa Som IM REL P 7-UNIT 300mA TRANSISTOR ARRAY WITH CLAMP DIODE DESCRIPTION M63813P/FP/GP/KP are seven-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN
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M63813P/FP/GP/KP
300mA
M63813P/FP/GP/KP
GP 015 DIODE
GP 005 DIODE
GP 250 DIODE
M63813FP
M63813GP
M63813KP
M63813P
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ZNR 471
Abstract: 103 2KV pm3a104k detailed vfd circuit diagram for motor three phase 710 opto coupler 16T202DA1 DA1 7805 KA78L05BP 100uf 16v electrolytic capacitor TLP521
Text: VDC_AD support DCP PV3.3 DA1 KDS226 MC_CON AC2 AC1 3 C35 104,50V DCP 2 PV5 Z1 ZNR 471 R51 4.7KJ0 PV3.3 support VDC_FB R39 100KF,1W R40 100KF,1W 100KF,1W R41 R42 100KF,1W Q2 KRC101S R9 4.7KJ0 2 Q1 2N2222 R38 2.8KF0 2 PV5 U1 KA5H0280R SPS 1 support 500K,2W R15
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KDS226
100KF
KRC101S
2N2222
KA5H0280R
474/AC275V
PM3A104K
ZNR 471
103 2KV
pm3a104k
detailed vfd circuit diagram for motor three phase
710 opto coupler
16T202DA1
DA1 7805
KA78L05BP
100uf 16v electrolytic capacitor
TLP521
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IN60A
Abstract: PR30A IC270
Text: APT20GF120BRD 1200V 32A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.
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APT20GF120BRD
O-247
20KHz
O-247
IN60A
PR30A
IC270
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RY 227 Tf 227 10A
Abstract: APT100GF60JRD
Text: APT100GF60JRD 600V 140A E E Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.
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APT100GF60JRD
20KHz
OT-227
RY 227 Tf 227 10A
APT100GF60JRD
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Untitled
Abstract: No abstract text available
Text: APT11GF120BRD 1200V 22A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.
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APT11GF120BRD
O-247
20KHz
APT11GF120BRD
O-247
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diode ry 10 A
Abstract: E135149 1N4007 definitions 1N4007 RY16046 Diode 1N4007 n type connector PCB Relay schrack RY
Text: General Purpose Relays Accessories Miniature PCB Relay RYII • Accessories for Miniature PCB Relay RYII, pinning 3.2 mm ■ Socket with PCB- or screw terminals ■ No reduction of protection class or creepage/clearance with plastic retainer ■ Easy replacement of relays
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2002/95/EC)
F0226-A
E135149
coil-co-40.
S0322-AA
RY78600
diode ry 10 A
E135149
1N4007 definitions
1N4007
RY16046
Diode 1N4007
n type connector PCB
Relay schrack RY
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RY 227 Tf 227 10A
Abstract: pearson 411 IGBT 1200V 60A igbt 60a
Text: APT60GF120JRD 1200V 100A E E Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.
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APT60GF120JRD
20KHz
OT-227
RY 227 Tf 227 10A
pearson 411
IGBT 1200V 60A
igbt 60a
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IGBT 1200V 60A
Abstract: No abstract text available
Text: APT50GF120JRD 1200V 75A E E Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode FRED offers superior ruggedness and fast switching speed.
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APT50GF120JRD
20KHz
OT-227
IGBT 1200V 60A
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MPY600AP
Abstract: MPY600 signal multiplier 1N914 OPA621 x2107
Text: MPY600 FPO Wide Bandwidth SIGNAL MULTIPLIER FEATURES APPLICATIONS ● WIDE BANDWIDTH: 75MHz — Current Output 30MHz — Voltage Output ● LOW NOISE ● LOW FEEDTHROUGH: –60dB 5MHz ● GROUND-REFERRED OUTPUT ● LOW OFFSET VOLTAGE ● MODULATOR/DEMODULATOR
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MPY600
75MHz
30MHz
MPY600
30MHz,
75MHVS
MPY600AP
signal multiplier
1N914
OPA621
x2107
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LRD 07
Abstract: IC-7060
Text: APT50GF60B2RD APT50GF60LRD 600V 80A APT50GF60B2RD Fast IGBT & FRED T-Max B2RD The Fast IGBT™ is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior
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APT50GF60B2RD
APT50GF60LRD
20KHz
O-264
APT50GF60B2RD/LRD
LRD 07
IC-7060
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Untitled
Abstract: No abstract text available
Text: b E Lt T a 2 ci GD1Ô21D 3G1 • MITSUBISHI LASER DIODES iN*rV ML7XX12 SERIES ll«»» “ some Pat3" InGaAsP LASER DIODES ML78512 D E S C R IP T IO N M L7XX12 FEATURES series are InGaAsP laser diode arrays # 1310nm , F ab ry - perot LD array 9 10 — 12 b ea m s /c h ip
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ML7XX12
ML78512
L7XX12
1310nm
1310n
12beam
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CAR ALTERNATOR REGULATOR
Abstract: car alternator surge CAR ALTERNATOR REGULATOR 24 volt CAR ALTERNATOR REGULATOR file free BRIDGE RECTIFIER 40 AMP IN LINE WIRE LEAD 24 volt surge suppressor Alternator regulator zener alternator rectifier 1N4003 IVIR2525
Text: MR2525 MR2525R POWER RECTIFIER/POW ER SURGE SUPPRESSOR • ’ ' designed fo r applications requiring a low voltage re c tifie r w ith reverse avalanche characteristics or fo r use as a reverse power transient suppressor. Developed to suppress transients in the auto
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MR2525
MR2525R
MR2525R
CAR ALTERNATOR REGULATOR
car alternator surge
CAR ALTERNATOR REGULATOR 24 volt
CAR ALTERNATOR REGULATOR file free
BRIDGE RECTIFIER 40 AMP IN LINE WIRE LEAD
24 volt surge suppressor
Alternator regulator
zener alternator rectifier
1N4003
IVIR2525
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4X4 push-button matrix keyboard
Abstract: PCD8570 3 x 4 telephone keypad PCD3312 keyboard to DTMF PCD8577 PCF8577 DTMF and emergency PCD3343 PCD3341
Text: D EVE LO PM EN T DATA This data sheet contains advance inform ation and specifications are subject to change w ith o u t notice. U pus P C D 3341 CMOS REPERTORY DIALLER TELEPHONE SET CONTROLLER G E N E R A L D E S C R IP T IO N T he PCD3341 is a lo w th re sh o ld voltage IC fa b rica te d in CMOS. I t is designed to c o n tro l d isp la y, redial
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PCD3341
PCD3341
PCD3343.
4X4 push-button matrix keyboard
PCD8570
3 x 4 telephone keypad
PCD3312
keyboard to DTMF
PCD8577
PCF8577
DTMF and emergency
PCD3343
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Untitled
Abstract: No abstract text available
Text: SSE D N AMER PHILIPS/DISCRETE ^53=131 D0H025S 1 P o w e rM O S tra n s is to r B U K 4 2 6-80 0 A B U K 426-800B r - 3 1-// GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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D0H025S
426-800B
BUK426
-800A
-800B
26-800A
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE f.r.d FRS400CA120 UL;E76102(M) F R S 4 0 0 C A 1 2 0 is a high speed isolated diode module designed for high power switching application. F R S 4 0 0 C A 1 2 0 is suitable for high frequency application requiring low loss and high speed control.
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FRS400CA120
E76102
400ns
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1N4150
Abstract: 1N4450 1N4606 1N4607 1N460B D035 DT230C DT230H JS-2-65-11
Text: SIGNAL DIODES 100 - 200 M A TYPES 200 - 400 M A TYPES Ir @ Part Number BV 1OOü A Min. V 1N4451 40 1N4607 85 @ 25°C Max. <nA) 1 @ Vf Max. V r (V ) (V) @ Ir(mA) Co @ OV (pf) Package T»pe trr (nsec) 50 30 1.00 300 6 10 100 50 1.00 400 4 10 1 Package Outline No.
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100/iA
1N4150*
1N4450
1N4606
100/tA
1N445I
1N4607
1N460B
DT230C
DT230H
1N4150
D035
JS-2-65-11
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Untitled
Abstract: No abstract text available
Text: ‘> 3 7 I y-f>m Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS D30SC4M Case : ITO-3P 40V 30A •Tj 150°C •P rrs m & d D •SFWS • DC/DCZlVK-i? •mm. y -A , oa«ü m •æe. RATINGS Absolute Maximum Ratings m r m n Symbol Item lii {(fnitlX
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D30SC4M
0GD3233
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