s027
Abstract: C6802 SS-00259 high power laser IEC60825-1 SLD433S4
Text: SLD433S4 60W Array Laser Diode Description The SLD433S4 is a high power laser diode with an array structure, which achieves 60W high power. The package is high efficiency water cooling package. Module customizing is available. M-S027 Features • High power
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SLD433S4
SLD433S4
M-S027
SS-00259,
SS-00259
net/SonyInfo/procurementinfo/ss00259/
s027
C6802
high power laser
IEC60825-1
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e05125
Abstract: C6802 IEC60825-1 SLD433S4 SS-00259 water conductivity circuit
Text: SLD433S41 60W Array Laser Diode Description The SLD433S41 is a high power laser diode with an array structure, which achieves 60W high power. The package is high efficiency water cooling package. Module customizing is available. M-S027 Features • High power
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SLD433S41
SLD433S41
M-S027
SS-00259,
SS-00259
net/SonyInfo/procurementinfo/ss00259/
SLD433S4
e05125
C6802
IEC60825-1
SLD433S4
water conductivity circuit
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Untitled
Abstract: No abstract text available
Text: SLD433S4 60W Array Laser Diode Preliminary Description The SLD433S4 is a high power laser diode with an array structure, which achieves 60W high power. The package is high efficiency water cooling package. Module customizing is available. M-S027 Features • High power
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SLD433S4
SLD433S4
M-S027
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CCS020M12CM2
Abstract: CPWR-AN13
Text: CCS020M12CM2 1.2kV, 80 mΩ Silicon Carbide Six-Pack Three Phase Module C2M MOSFET and Z-Rec Diode 1.2 kV RDS(on) 80 mΩ Esw, Total @ 20A, 150 ˚C Features • • • • • • • VDS 0.48 mJ Package Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode
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CCS020M12CM2
CPWR-AN12,
CPWR-AN13]
CCS020M12CM2
CPWR-AN13
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Untitled
Abstract: No abstract text available
Text: SKN 320 THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode Rectifier Diode 3$>@ 3$$@ 3 B22 [22 0A22 0B22 3 B22 [22 0A22 0B22 =PJ3 U YA2 J S 6:Z 0[2¥ ;7 U 0AE ]MW >FG YA2^2B >F$ YA2^2B >FG YA2^2[ >F$ YA2^2[ >FG YA2^0A >F$ YA2^0A >FG YA2^0B >F$ YA2^0B 0122 0122 >FG YA2^01
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S022W
B22222
Y22222
120a0H
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IR230LM06CS02CB
Abstract: 40EPF
Text: Bulletin I0126J 08/97 IR230LM06CS02CB FAST RECOVERY DIODE Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 40EPF Series Major Ratings and Characteristics Parameters Units 1080 mV
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I0126J
IR230LM06CS02CB
40EPF
12-Mar-07
IR230LM06CS02CB
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40EPF
Abstract: IR230LM06CS02CB
Text: Bulletin I0126J 08/97 IR230LM06CS02CB FAST RECOVERY DIODE Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 40EPF Series Major Ratings and Characteristics Parameters Units 1080 mV
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I0126J
IR230LM06CS02CB
40EPF
IR230LM06CS02CB
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diode 1044
Abstract: No abstract text available
Text: Preliminary Data Sheet I0119J 09/00 IR060LM12CS02CB FAST RECOVERY DIODE Junction Size: Square 60 x 60 mils Wafer Size: 4" VRRM Class: 1200 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: Major Ratings and Characteristics Parameters Units
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I0119J
IR060LM12CS02CB
diode 1044
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1N SERIES DIODE
Abstract: 1A DIODE 1N bf 649 sb 649 a M6HZ ba 12300 M8HZ 1N645 S02MB1A RB1A
Text: mouldings a THOMSON-CSF moulages Three phase bridges Ponts triphasés + Single phase bridges Ponts monophasés + Parallel diode Series diode pairs pairs Bivalves Doubleurs VR •dsm 10 ms V RRM 'm is recom mended V (V) (A) 100 200 50 80 150 250 380 In per diode
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TVS Diode
Abstract: diode array S020L SO 273 tvs diode 225
Text: SECTION 2 Transient Voltage Suppressor Arrays Page Quick Reference Guide 8 Pin DIP TVS Diode Array - 4 and 6 Line DA Series: DA Series: 16 Pin DIP TVS Diode Array - 8 and 12 Line 16 Pin Hermetic DIP TVS Diode Array -1 5 Line DLZ Series: EMC Series: 16 Pin S0-16L TVS/Low Pass L/C Filter Array
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S0-16L
PLC01-6:
PLC03-6:
OT-143
OT-23
PSM712
S52B2
B02-431-81Q1
BQ2-431-228S
TVS Diode
diode array
S020L
SO 273
tvs diode 225
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY DIODE ARRAY ISSU E 1 - AUGUST 1996 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parallel data lines. • Reduced reflection noise The device helps suppress transients caused
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SDA32
DIL20
200mA
SDA32
DIL20
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY DIODE ARRAY ISSUE 2 - JANUARY 1998 DEVICE DESCRIPTION FEATURES The SDA32 Schottky Barrier Diode Array is designed to reduce reflection noise on high speed parailei data lines. • Reduced reflection noise • Repetitive peak forw ard current • 200mA
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SDA32
200mA
DIL20
SDA32
SDA32N20
SDA32D20
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diode F 82 bp
Abstract: DIODE BP ZF8.2 EC10QSO ZF-8.2 Zf12 smd zener bp ZF24 ZF30 Q05CT
Text: QUANTUM MARKETING INTERNATIONA* a n Nihon Inter Electronics Corporation AUTHORIZED AGENT Case Style Type Circuit E C 10DS1 EC10DS2 EC10DS4 EC10DS6 R ectifier Diode D 64 lo V FM (A) (V) 1.0 1.1 .55 EC10Q S03 EC10QSO_4 Schottky Barrier Diode (S.B.D.) Single C hip
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10DS1
EC10DS2
EC10DS4
EC10DS6
EC10Q
EC10QSO
10QS05
10QS06
EC10QS10
EC15Q
diode F 82 bp
DIODE BP
ZF8.2
ZF-8.2
Zf12
smd zener bp
ZF24
ZF30
Q05CT
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DIODE N20
Abstract: SD Series
Text: Section 9: Integrated Circuits S ch o ttky Diode A rra y Series SD A S e rie s The SDA Schottky Barrier Diode Array series is designed to reduce reflection noise on high speed parallel data lines. This helps suppress transients caused by transm ission line
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SDA12,
SDA12
SDA24
SDA32
SDA16D24
S016/DIL16
N16/D16
S020/DIL20
N20/D20
SDA12
DIODE N20
SD Series
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TDA8808
Abstract: FHFM 103 plastic Disc Capacitors 808T SI 7300 S028 TDA8808AT TDA8808T
Text: TD A 8808T TDA8808AT PHOTO DIODE SIGNAL PROCESSOR FOR COMPACT DISC PLAYERS GENERAL DESCRIPTION The TDA8808 is a bipolar integrated circuit designed fo r use in compact disc players w ith a single spot read-out system. It amplifies the photo-diode signals and processes the error signals fo r the
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TDA8808T
TDA8808AT
TDA8808
TDA8808T
TDA8808AT
711002b
FHFM
103 plastic Disc Capacitors
808T
SI 7300
S028
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GaAs SPDT IC FET
Abstract: SW-239TR MESFET Application
Text: Key Application Features of MMIC GaAs and Pin Diode* Switches Applications Features of PIN Diode and GaAs FET Switches In SOIC type plastic packages the GaAs FET switches can handle up M /A -COM manufactures both PIN diodes and GaAs FET sem icon able that operate to 3 GH z as analog attenuators, digital attenuators
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ATC100A
AT-210/AT-220
GaAs SPDT IC FET
SW-239TR
MESFET Application
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S3 DIODE schottky
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification 6 N-channel 30 mfi FET/Schottky barrier diode array_ FEATURES PHN603S PINNING-SOT137-1 S024 • 30 mQ on-state resistance • On board Schottky diodes for back-emf clamping. APPLICATIONS • Driving high performance three phase brushless
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24-pin
OT137-1
SNW-EQ-608,
SNW-FQ-302A
SNW-FQ-302B.
PINNING-SOT137-1
PHN603S
S3 DIODE schottky
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Untitled
Abstract: No abstract text available
Text: SCHOTTKY BARRIER DIODE 1.4A /20 V EC15Q S02L FEATURES ° Miniture Size, Surface Mount Device o Extremely Low Forward Voltage Drop 2.2 .Q87 1.8(.Ô71) 4 .7 (.lo o ) _4.7(.168)_ ° Low Power Loss, High Efficiency 0.2(.Q08) -OTÜÜ55 f ° High Surge Capability
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EC15Q
bbl5123
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SN74CBTS3306
Abstract: No abstract text available
Text: SN74CBTS3306 DUAL FET BUS SWITCH WITH SCHOTTKY DIODE CLAMPING SC D S029D - JA N U A R Y 1996 - REVISED MAY 1998 • 5-D. Switch Connection Between Two Ports • TTL-Compatible Input Levels • Package Options Include Plastic Small-Outline D and Thin Shrink
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SN74CBTS3306
SCDS029D
10MHz,
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E78996 rectifier module
Abstract: X 0238 CE D105 D106 ZD 1E3 diode 40 S02 g1e2
Text: International Eran]Rectifier • MÔS5M52 ÜOlbSñM ^23 ■ INR INTERNATIONAL RECTIFIER bSE D SERIES B40DL/CL/JL FAST RECOVERY DIODE / DIODE Power Modules in B-package Features F a s t r e c o v e r y tim e c h a r a c te r is tic s E le c tr ic a lly is o la te d b a s e p la te
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4fl55H52
E78996
B40DL.
chargerB40DL/B40CL/JL
B40DL/CL/JL
E78996 rectifier module
X 0238 CE
D105
D106
ZD 1E3
diode 40 S02
g1e2
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s744
Abstract: No abstract text available
Text: Tem ic CQX19 S e m i c o n d u c t o r s GaAs Infrared Emitting Diode with Metal Socket Description CQ X 19 is a high pow er G aA s infrared em itting diode in a special case, consisting o f a solid metal T O -5 header with a m olded clear plastic lens. This allow s the user to m ount the device on a heatsink and
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CQX19
15-Jul-%
l5-Jul-96
s744
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Solder bar of Senju M705
Abstract: senju m705 solder paste spec senju m705 solder wire Senju M705 solder bar a1249 senju m705 solder paste
Text: SHARP SPEC. ISSU E ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION DEVICE SPECIFICATION FOR LIGHT EMITTING DIODE MODEL No. GM4B W6433 0A CUSTOMERS' APPROVAL PRESENTED Date_ Date C lu r& -¿ * > 7 BZ_ Y.Inada, 1 /
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GM4BW64330A
A1249
Solder bar of Senju M705
senju m705 solder paste spec
senju m705 solder wire
Senju M705 solder bar
senju m705 solder paste
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solder bar senju 705
Abstract: photometer EG G 150 EIAJ C-3
Text: SPEC. No. SH/VR $ /'T IS S U E /*•*' ELECTRONIC COMPONENTS ELECOM GROUP DG-07Y012 Dec. 28th, 2007 ^ ¡\ SHARP CORPORATION SPECIFICATIONS DEVICE SPECIFICATIONS FOR LIGHT EMITTING DIODE MODEL No.' GM1BW76341A CUSTOMERS’ APPROVAL PRESENTED Date_
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DG-07Y012
GM1BW76341A
A1249
solder bar senju 705
photometer EG G 150
EIAJ C-3
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amplifier/equalizer
Abstract: TDA1301 B302 TDA1301T
Text: Product specification Philips Sem iconductors Digital servo processor DSIC2 TDA1301T FEATURES - 28-pin SO package The DSIC2 realizes the following servo functions: - Great flexibility towards different CD mechanisms • Diode signal preprocessing - Full and transparent application information
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TDA1301T
711002b
711002b
amplifier/equalizer
TDA1301
B302
TDA1301T
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