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    DIODE S31 Search Results

    DIODE S31 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE S31 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S3160

    Abstract: S3078
    Text: Part Number S3160 Revision A – August 12, 2004 S3160 Data Sheet 2.5 Gbps Wide Bandwidth Transimpedance Amplifier FEATURES • • • • • • • GENERAL DESCRIPTION Greater than 2 GHz Bandwidth 3 kΩ differential transimpedance Single 3.3 V supply


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    PDF S3160 OC-48 S3160 S3078

    Untitled

    Abstract: No abstract text available
    Text: Si7947DP New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.014 @ VGS = - 10 V - 13.7 0.025 @ VGS = - 4.5 V - 10.1 APPLICATIONS D Battery Switch D Load Switch - 30 PowerPAKt SO-8


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    PDF Si7947DP Si7947DP-T1 S-31264â 16-Jun-03

    2N7002E

    Abstract: 2N7002E-T1
    Text: 2N7002E Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 60 3 @ VGS = 10 V 240 FEATURES D D D D D BENEFITS Low On-Resistance: 3 W Low Threshold: 2 V (typ) Low Input Capacitance: 25 pF Fast Switching Speed: 7.5 ns Low Input and Output Leakage


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    PDF 2N7002E O-236 OT-23) 08-Apr-05 2N7002E 2N7002E-T1

    sg74 diode

    Abstract: sg77 diode DIODE D 92 02 78.P sg27 diode S41 sensor shock swith sensor KA9220C SG51 SG56 SG59
    Text: KA9220C RF AMP + SSP INTRODUCTION The KA9220C is an 1-Chip BlCMOS integrated circuit to perform the function of RF AMP and SSP Servo Signal Processor for Compact disc player applications. It consists of RF signal processing, focus servo, tracking servo,


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    PDF KA9220C KA9220C 1420C sg74 diode sg77 diode DIODE D 92 02 78.P sg27 diode S41 sensor shock swith sensor SG51 SG56 SG59

    2N8050

    Abstract: 1507-50 kc573 1 wire 7 segment lcd controller C6502 2N805 pin diagram of IC LM7805 LM7805 voltage regulator U3 LM7805 5v regulator syntek
    Text: Syntek Semiconductor Co., Ltd. STK55C324 Specification 1. FEATURES : * Operating voltage : 2.5V – 5.5 V. * Maximum CPU operating frequency : 2MHz at 2.7V * Dual oscillators : - RC or 32.768 KHz crystal oscillator for LCD display and watch timer. - RC oscillator for system clock.


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    PDF STK55C324 32768Hz 2N8050 1507-50 kc573 1 wire 7 segment lcd controller C6502 2N805 pin diagram of IC LM7805 LM7805 voltage regulator U3 LM7805 5v regulator syntek

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Chip Schottky Barrier Diodes FM320 THRU FM3100 Silicon epitaxial planer type Features SMC Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.283 7.2 0.260(6.6) For surface mounted applications.


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    PDF FM320 FM3100 MIL-S-19500 DO-214AB MIL-STD-750, 300us

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    Abstract: No abstract text available
    Text: Formosa MS Chip Schottky Barrier Diodes FM320-B THRU FM3100-B Silicon epitaxial planer type Features SMB Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.213 5.4 0.197(5.0) 0.016(0.4) Typ.


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    PDF FM320-B FM3100-B MIL-S-19500 DO-214AA MIL-STD-750, 300us

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Chip Schottky Barrier Diodes FM320-A THRU FM3100-A Silicon epitaxial planer type Features SMA Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.189 4.8 0.165(4.2) 0.012(0.3) Typ.


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    PDF FM320-A FM3100-A MIL-S-19500 DO-214AC MIL-STD-750, 300us

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Chip Schottky Barrier Diodes FM320-AL THRU FM3100-AL Silicon epitaxial planer type Features SMA-L Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. 0.205 5.2 0.189(4.8)


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    PDF FM320-AL FM3100-AL MIL-S-19500 DO-214AC MIL-STD-750, 300us

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Chip Schottky Barrier Rectifier FM320 THRU FM3200 List List. 1 Package outline. 2


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    PDF FM320 FM3200 MIL-STD-750D METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1021

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Chip Schottky Barrier Rectifier FM320-A THRU FM3200-A List List. 1 Package outline. 2


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    PDF FM320-A FM3200-A MIL-STD-750D METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1021

    Untitled

    Abstract: No abstract text available
    Text: Chip Schottky Barrier Rectifier FM320-AL THRU FM3200-AL Formosa MS List List. 1 Package outline. 2


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    PDF FM320-AL FM3200-AL MIL-STD-750D METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1021

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Chip Silicon Rectifier SFM31 THRU SFM38 List List. 1 Package outline. 2


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    PDF SFM31 SFM38 MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 1000hrs.

    Untitled

    Abstract: No abstract text available
    Text: Chip Schottky Barrier Rectifier Formosa MS FM320-A THRU FM3200-A List List. 1 Package outline. 2


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    PDF FM320-A FM3200-A MIL-STD-750D METHOD-1056 METHOD-4066-2 1000hrs. METHOD-1051

    2sc9018

    Abstract: Si4827-DEMO
    Text: Si4827-DEMO Si4827 D EMO B OARD U SER ’ S G UIDE 1. Features ATDD analog tune and digital display FM/AM/SW radio Worldwide FM band support from 64 MHz to 109 MHz with 5 default sub-bands: FM1 87—108 MHz (Demo Board Default) 86.5—109 MHz


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    PDF Si4827-DEMO Si4827 2sc9018

    GRM31 Murata

    Abstract: P05E transistor SMD making code GC piezoelectric disc 5A 1 Mhz piezotite CSTCE-G murata Chip Multilayer Delay Lines murata PTC THERMISTOR FOR DEGAUSSING K26E inductor 100 micro henry
    Text: K26E.pdf 05.10.14 2005-2006 MURATA PRODUCT Selection Guides 2005-2006 MURATA PRODUCT Selection Guides MURATA PRODUCT Selection Guides K26E.pdf 05.10.14 CONTENTS Capacitors 01 Resistors • Thermistors 05 Coils · Delay Lines 08 Noise Suppression Products · EMI Suppression Filters


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    PDF K26E-6 GRM31 Murata P05E transistor SMD making code GC piezoelectric disc 5A 1 Mhz piezotite CSTCE-G murata Chip Multilayer Delay Lines murata PTC THERMISTOR FOR DEGAUSSING K26E inductor 100 micro henry

    BERG 6 pin

    Abstract: TG110-S050N2 TG110-S050p2 LXT971 SK34DI RJ45 modular jack DIODE H5 SMD LXT971A Diodes smd e5 FERRITE BEAD 1000 OHM 0805
    Text: LXD971B Demo Board for 3.3V 10/100 Applications Board Rev A1 Development Kit Manual January 2001 As of January 15, 2001, this document replaces the Level One document Order Number: 249246-001 LXD971B Demo Board for 3.3V 10/100 Applications (Board Rev A1) User Guide.


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    PDF LXD971B LT1086CM 14-SOIC TC74LVX14FN LT1086CM-3 HC-49 MP250 BERG 6 pin TG110-S050N2 TG110-S050p2 LXT971 SK34DI RJ45 modular jack DIODE H5 SMD LXT971A Diodes smd e5 FERRITE BEAD 1000 OHM 0805

    D84 TRANSISTOR

    Abstract: D126D 75853NW LC75853NE LC75853NW SQFP64
    Text: Ordering number : ENN4967C CMOS IC LC75853NE, 75853NW 1/3 Duty LCD Display Drivers with Key Input Function Overview Package Dimensions The LC75853NE and LC75853NW are 1/3 duty LCD display drivers that can directly drive up to 126 segments and can control up to four general-purpose output ports.


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    PDF ENN4967C LC75853NE, 75853NW LC75853NE LC75853NW 3159-QFP64E LC75853NE] QFP64E 3190-SQFP64 LC75853NW] D84 TRANSISTOR D126D 75853NW SQFP64

    Untitled

    Abstract: No abstract text available
    Text: QuickSwitch Products QS316233 High-Speed CMOS QS3162233 QuickSwitch 32:16 Mux/Demux & c lu c T O R , iN c . FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 5£2 bidirectional switches connect inputs to outputs • Zero propagation delay, zero ground bounce


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    PDF QS316233 QS3162233 QS316233 QS3162233, 32-bit 16-bit QS3162233

    Untitled

    Abstract: No abstract text available
    Text: QuickSwitch Products S e m ic o n d u c t o r , I n c . High-Speed CMOS QuickSwitch 32:16 Mux/Demux With 5 0Q Damping Resistor QS3165233 .nform^ on FEATURES/BENEFITS DESCRIPTION • The Q S3165233 a32-bitto 16-bit high-speed CMOS, TTL-com patible switch which can m ultiplex or


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    PDF QS3165233 56-pin S3165233 a32-bitto 16-bit S316233 QS3162233 MDSL-00245-00

    Untitled

    Abstract: No abstract text available
    Text: m Q u ic k S w itc h P ro d u c ts H ig h - S p e e d S em iconductor,Inc. C M O S B u s -E x c h a n g e 1 8 ' B it q s 316209 Q S3162209 S w itc h FEATURES/BENEFITS DESCRIPTION • The QS316209 provides a set of eighteen high­ speed C M O S T T L -c o m p a tib le b u s-e xch a n g e


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    PDF S3162209 QS316209 QS316209 18-bit 74bbfl03 DDD37S7

    KD321408

    Abstract: transistor darlington 800V High Voltage max2823
    Text: mumtex POÜJEREX I-N C 3^E D • 00DM212 1 H P R X KD321408 ■T- 2 3 ' 3 S ' Dual Darlington Transistor Module Powerex, Inc., M ills Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14


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    PDF 00DM212 KD321408 BP107, Amperes/1400 KD321408 transistor darlington 800V High Voltage max2823

    Untitled

    Abstract: No abstract text available
    Text: International S Rectifier PD — IRLI3303 p r e l im in a r y HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Isolated Package • High Voltage Isolation = 2.5KVRMS • Sink to Lead Creepage Dist. = 4.8mm • Fully Avalanche Rated


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    PDF IRLI3303 1897IR

    Untitled

    Abstract: No abstract text available
    Text: • I a ip > | I h JX “ r \ usm si Final Ele c tric a l S p e c ific a tio n s L l l I F i XLf LT1303/Ln303-5 TECHNOLOGY M ic ro p o w e r High E fficien cy D C / D C C o n v e rte r with Low -Battery D e te c to r A d ju sta b le a n d Fixed 5V A p r il 19 9 4


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    PDF LT1303/Ln303-5 551fl4bfi LT1303/LT1303-5