smd marking code sot-23 infineon
Abstract: SM 226 6V
Text: BSS670S2L OptiMOS Power-Transistor Product Summary Feature 55 VDS N-Channel Enhancement mode Logic Level V RDS on 650 m ID 0.54 A SOT 23 Drain pin 3 Type Package Ordering Code Marking BSS670S2L SOT 23 Q67042-S4052 BSs Gate pin1 Source pin 2 Maximum Ratings, at Tj = 25 °C, unless otherwise specified
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BSS670S2L
BSS670S2L
Q67042-S4052
smd marking code sot-23 infineon
SM 226 6V
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RG130
Abstract: smd marking code sot-23 infineon BSS670S2L Q67042-S4052
Text: BSS670S2L Final data OptiMOS=Small-Signal-Transistor Product Summary Feature N-Channel VDS Enhancement mode R DS on 650 m Logic Level ID 0.54 A 55 V SOT-23 3 2 1 VPS05161 Drain pin 3 Type BSS670S2L Package SOT-23 Ordering Code Q67042-S4052 Gate pin1
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BSS670S2L
OT-23
VPS05161
Q67042-S4052
RG130
smd marking code sot-23 infineon
BSS670S2L
Q67042-S4052
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BSS670S2L
Abstract: smd marking code sot-23 infineon marking BSs q67042-s4052 marking BSs sot-23
Text: BSS670S2L OptiMOS Buck converter series Product Summary Feature VDS •N-Channel 55 V •Enhancement mode RDS on 650 mΩ •Logic Level ID 0.54 A SOT 23 Drain pin 3 Type Package Ordering Code Marking BSS670S2L SOT 23 Q67042-S4052 BSs Gate pin1 Source
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BSS670S2L
Q67042-S4052
BSS670S2L
smd marking code sot-23 infineon
marking BSs
q67042-s4052
marking BSs sot-23
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Q67042-S4052
Abstract: No abstract text available
Text: BSS670S2L OptiMOS Buck converter series Product Summary Feature VDS •N-Channel 55 V •Enhancement mode RDS on 650 mΩ •Logic Level ID 0.54 A PG-SOT 23 Drain pin 3 Type Package Ordering Code Marking BSS670S2L PG-SOT 23 Q67042-S4052 BSs Gate pin1 Source
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BSS670S2L
BSS670S2L
Q67042-S4052
Q67042-S4052
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SUD17N25-165
Abstract: 40578
Text: SUD17N25-165 New Product Vishay Siliconix N-Channel 250-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 250 0.165 @ VGS = 10 V 17 APPLICATIONS D Automotive such as − Diesel Fuel Injection
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SUD17N25-165
O-252
SUD17N25-165--E3
S-40578--Rev.
29-Mar-04
SUD17N25-165
40578
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Si3983DV
Abstract: Si3983DV-T1
Text: Si3983DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −2.5 0.145 @ VGS = −2.5 V −2.0 0.220 @ VGS = −1.8 V −1.0 D TrenchFETr Power MOSFET D Symetrical Dual P-Channel
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Si3983DV
Si3983DV-T1--E3
S-40575--Rev.
29-Mar-04
Si3983DV-T1
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Si3991DV
Abstract: 72427
Text: Si3991DV New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.240 @ VGS = −10 V −1.6 0.470 @ VGS = −4.5 V −1.0 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS
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Si3991DV
Si3991DV-T1--E3
S-40575--Rev.
29-Mar-04
72427
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Si3433BDV
Abstract: Si3433BDV-T1-E3 Si3433BDV-T1
Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D
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Si3433BDV
Si3433BDV-T1
Si3433BDV-T1--E3
S-40575--Rev.
29-Mar-04
Si3433BDV-T1-E3
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40573
Abstract: SUD50N03-09P S-40573-Rev
Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D 100% Rg Tested APPLICATIONS D DC/DC Converters
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SUD50N03-09P
O-252
SUD50N03-09P--E3
Avalanch75
S-40573--Rev.
29-Mar-04
40573
SUD50N03-09P
S-40573-Rev
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Si3993DV
Abstract: 72320 Si3993DV-T1 si3993dv-t1-e3
Text: Si3993DV Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.133 @ VGS = −10 V −2.2 0.245 @ VGS = −4.5 V −1.6 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS D Battery Switch for Portable Devices
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Si3993DV
Si3993DV-T1
Si3993DV-T1--E3
S-40575--Rev.
29-Mar-04
72320
si3993dv-t1-e3
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Si3981DV
Abstract: 7250.2
Text: Si3981DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.185 @ VGS = −4.5 V −1.9 0.260 @ VGS = −2.5 V −1.6 0.385 @ VGS = −1.8 V −0.7 APPLICATIONS
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Si3981DV
Si3981DV-T1--E3
-20Duty
S-40575--Rev.
29-Mar-04
7250.2
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mar 735
Abstract: 40578 SUD17N25-165
Text: SUD17N25-165 New Product Vishay Siliconix N-Channel 250-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 250 0.165 @ VGS = 10 V 17 APPLICATIONS D Automotive such as − Diesel Fuel Injection
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SUD17N25-165
O-252
SUD17N25-165--E3
08-Apr-05
mar 735
40578
SUD17N25-165
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Si3981DV
Abstract: No abstract text available
Text: Si3981DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.185 @ VGS = −4.5 V −1.9 0.260 @ VGS = −2.5 V −1.6 0.385 @ VGS = −1.8 V −0.7 APPLICATIONS
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Si3981DV
Si3981DV-T1--E3
-20ed
08-Apr-05
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40575
Abstract: SI3993DV SI3993DV-T1
Text: Si3993DV Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.133 @ VGS = −10 V −2.2 0.245 @ VGS = −4.5 V −1.6 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS D Battery Switch for Portable Devices
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Si3993DV
Si3993DV-T1
Si3993DV-T1--E3
08-Apr-05
40575
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Untitled
Abstract: No abstract text available
Text: Si3991DV New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.240 @ VGS = −10 V −1.6 0.470 @ VGS = −4.5 V −1.0 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS
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Si3991DV
Si3991DV-T1--E3
08-Apr-05
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Si3433BDV
Abstract: Si3433BDV-T1-E3 Si3433BDV-T1 SI3433B
Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D
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Si3433BDV
Si3433BDV-T1
Si3433BDV-T1--E3
08-Apr-05
Si3433BDV-T1-E3
SI3433B
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S-40573-Rev
Abstract: 40573
Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D 100% Rg Tested APPLICATIONS D DC/DC Converters
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SUD50N03-09P
O-252
SUD50N03-09P
SUD50N03-09P--E3
08-Apr-05
S-40573-Rev
40573
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SI3433BDV
Abstract: No abstract text available
Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D
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Si3433BDV
Si3433BDV-T1
Si3433BDV-T1--E3
18-Jul-08
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Si3983DV
Abstract: Si3983DV-T1
Text: Si3983DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.110 @ VGS = −4.5 V −2.5 0.145 @ VGS = −2.5 V −2.0 0.220 @ VGS = −1.8 V −1.0 D TrenchFETr Power MOSFET D Symetrical Dual P-Channel
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Si3983DV
Si3983DV-T1--E3
18-Jul-08
Si3983DV-T1
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Si3981DV
Abstract: No abstract text available
Text: Si3981DV New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.185 @ VGS = −4.5 V −1.9 0.260 @ VGS = −2.5 V −1.6 0.385 @ VGS = −1.8 V −0.7 APPLICATIONS
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Si3981DV
Si3981DV-T1--E3
-20lectual
18-Jul-08
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54V4
Abstract: Si3993DV Si3993DV-T1
Text: Si3993DV Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.133 @ VGS = −10 V −2.2 0.245 @ VGS = −4.5 V −1.6 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS D Battery Switch for Portable Devices
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Si3993DV
Si3993DV-T1
Si3993DV-T1--E3
18-Jul-08
54V4
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Si3991DV
Abstract: No abstract text available
Text: Si3991DV New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.240 @ VGS = −10 V −1.6 0.470 @ VGS = −4.5 V −1.0 D TrenchFETr Power MOSFET D Symentrical Dual P-Channel APPLICATIONS
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Si3991DV
Si3991DV-T1--E3
18-Jul-08
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SI4483EDY
Abstract: No abstract text available
Text: Si4483EDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET D ESD Protection: 3000 V rDS(on) (W) ID (A) 0.0085 @ VGS = −10 V −14 APPLICATIONS 0.014 @ VGS = −4.5 V −11 D Notebook PC
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Si4483EDY
Si4483EDY--E3
Si4483EDY-T1--E3
S-40580--Rev.
29-Mar-04
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S-40570
Abstract: Si7458DP Si7458DP-T1
Text: Si7458DP Vishay Siliconix N-Channel 20-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0045 @ VGS = 4.5 V 22 0.0075 @ VGS = 2.5 V 19 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile
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Si7458DP
07-mm
Si7458DP-T1
S-40570--Rev.
29-Mar-04
S-40570
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