SO8 package fairchild
Abstract: fd303 f852
Text: August 1999 FDFS6N303 FETKEY N-Channel MOSFET with Schottky Diode General Description Features Fairchild Semiconductor's FETKEY technology combines a high cell density MOSFET and low forward drop 0.35V Schottky diode into a single surface mount power package. The
|
Original
|
PDF
|
FDFS6N303
SO8 package fairchild
fd303
f852
|
Untitled
Abstract: No abstract text available
Text: S6201 Data Sheet SiC Schottky Barrier Diode Bare Die VR 650V IF 6A*1 9nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type
|
Original
|
PDF
|
S6201
R1102B
|
Untitled
Abstract: No abstract text available
Text: S6202 Data Sheet SiC Schottky Barrier Diode Bare Die VR 650V IF 10A*1 15nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type
|
Original
|
PDF
|
S6202
R1102B
|
Untitled
Abstract: No abstract text available
Text: S6203 Data Sheet SiC Schottky Barrier Diode Bare Die VR 650V IF 20A*1 31nC QC lFeatures lInner circuit 1 Shorter recovery time C) 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type
|
Original
|
PDF
|
S6203
R1102B
|
Untitled
Abstract: No abstract text available
Text: S6207 Data Sheet SiC Schottky Barrier Diode Bare Die VR 650V IF 15A*1 23nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type
|
Original
|
PDF
|
S6207
R1102B
|
Untitled
Abstract: No abstract text available
Text: S6205 Data Sheet SiC Schottky Barrier Diode Bare Die VR 650V IF 12A*1 18nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type
|
Original
|
PDF
|
S6205
R1102B
|
Untitled
Abstract: No abstract text available
Text: S6204 Data Sheet SiC Schottky Barrier Diode Bare Die VR 650V IF 8A*1 13nC QC lFeatures lInner circuit C 1) Shorter recovery time 2) Reduced temperature dependence (C) Cathode (A) Anode 3) High-speed switching possible (A) lConstruction Silicon carbide epitaxial planer type
|
Original
|
PDF
|
S6204
R1102B
|
S620T
Abstract: No abstract text available
Text: MSRD620CT SWITCHMODE Soft Ultrafast Recovery Power Rectifier Plastic DPAK Package http://onsemi.com State of the art geometry features epitaxial construction with glass passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and
|
Original
|
PDF
|
MSRD620CT
0E-01
0E-02
0E-03
0E-04
MSRD620CT
0E-02
S620T
|
MOSFET and parallel Schottky diode
Abstract: CBVK741B019 EO70 FDB6644S FDP6644 FDP6644S FDP7060
Text: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
|
Original
|
PDF
|
FDP6644S/FDB6644S
FDP6644S
FDP6644S/FDB6644S
FDP6644/FDB6644
MOSFET and parallel Schottky diode
CBVK741B019
EO70
FDB6644S
FDP6644
FDP7060
|
50s MARKING CODE
Abstract: FDP7030BL FDP7030BLS MOSFET and parallel Schottky diode CBVK741B019 EO70 FDB7030BLS FDP7060 NDP4060L
Text: FDP7030BLS / FDB7030BLS 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
|
Original
|
PDF
|
FDP7030BLS
FDB7030BLS
FDP7030BLS
FDP7030BL
50s MARKING CODE
MOSFET and parallel Schottky diode
CBVK741B019
EO70
FDB7030BLS
FDP7060
NDP4060L
|
Untitled
Abstract: No abstract text available
Text: FDP6670S/FDB6670S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
|
Original
|
PDF
|
FDP6670S/FDB6670S
FDP6670S
FDP6670S/FDB6670S
FDP6670A/FDB6670A
|
Untitled
Abstract: No abstract text available
Text: FDP6670S/FDB6670S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
|
Original
|
PDF
|
FDP6670S/FDB6670S
FDP6670S
FDP6670S/FDB6670S
FDP6670A/FDB6670A
|
B667
Abstract: CBVK741B019 FDB6676S FDP6676 FDP6676S FDP7060 Schottky diode TO220
Text: FDP6676S / FDB6676S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
|
Original
|
PDF
|
FDP6676S
FDB6676S
FDP/B6676S
FDP/B6676S
FDP/B6676
B667
CBVK741B019
FDB6676S
FDP6676
FDP7060
Schottky diode TO220
|
Untitled
Abstract: No abstract text available
Text: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
|
Original
|
PDF
|
FDP6644S/FDB6644S
FDP6644S
FDP6644S/FDB6644S
FDP6644/FDB6644
|
|
|
Untitled
Abstract: No abstract text available
Text: FDP6690S/FDB6690S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
|
Original
|
PDF
|
FDP6690S/FDB6690S
FDP6690S
FDP6690S/FDB6690S
FDP6035AL/FDB6035AL
|
high voltage mosfet, to-220 case
Abstract: No abstract text available
Text: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
|
Original
|
PDF
|
FDP6644S/FDB6644S
FDP6644S
FDP6644S/FDB6644S
FDP6644/FDB6644
high voltage mosfet, to-220 case
|
Untitled
Abstract: No abstract text available
Text: FDP6690S/FDB6690S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
|
Original
|
PDF
|
FDP6690S/FDB6690S
FDP6690S
FDP6690S/FDB6690S
FDP6035AL/FDB6035AL
|
s620t
Abstract: MSRD620CT MSRD620CTT4 MSRD620CT-D DPAK
Text: MSRD620CT SWITCHMODE Soft Ultrafast Recovery Power Rectifier Plastic DPAK Package http://onsemi.com State of the art geometry features epitaxial construction with glass passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and
|
Original
|
PDF
|
MSRD620CT
r14525
MSRD620CT/D
s620t
MSRD620CT
MSRD620CTT4
MSRD620CT-D
DPAK
|
74353
Abstract: si4833a si4833ady S-62391
Text: SPICE Device Model Si4833ADY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si4833ADY
S-62391Rev.
27-Nov-06
74353
si4833a
S-62391
|
74353
Abstract: si4833a SI4833ADY
Text: SPICE Device Model Si4833ADY Vishay Siliconix P-Channel 30-V D-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si4833ADY
18-Jul-08
74353
si4833a
|
SUM60N04-05T
Abstract: No abstract text available
Text: SPICE Device Model SUM60N04-05T Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
SUM60N04-05T
18-Jul-08
SUM60N04-05T
|
SUM60N04-05LT
Abstract: No abstract text available
Text: SPICE Device Model SUM60N04-05LT Vishay Siliconix N-Channel 40-V D-S MOSFET with Sensing Diode CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
SUM60N04-05LT
18-Jul-08
SUM60N04-05LT
|
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
|
OCR Scan
|
PDF
|
AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
|
sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
|
OCR Scan
|
PDF
|
|
