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    DIODE SB360 Search Results

    DIODE SB360 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SB360 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SR506 Diode

    Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
    Text: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41


    Original     		PDF SMD4001-4007) SR560 DO-27 UF4004 DO-41 UF4007 10A10 LL4148 FR101-FR107 SR506 Diode diode 6A 1000v SM4007 Diode Diode SR360 diode her307

    SB360 diode

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD SB360 Preliminary DIODE 3.0A SCHOTTKY BARRIER RECTIFIER  DESCRIPTION The UTC SB360 is 3.0A schottky barrier rectifier. it uses UTC’s advanced technology to provide customers with high current capability and low forward voltage drop, etc.


    Original     		PDF SB360 SB360 SB360L-Z21D-R SB360G-Z21D-R SB360L-SMC-R SB360G-SMC-R DO-201AD QW-R601-081 SB360 diode

    SB360 diode

    Abstract: SB360G sb360 DIODE schottky
    Text: UNISONIC TECHNOLOGIES CO., LTD SB360 Preliminary DIODE 3.0A SCHOTTKY BARRIER RECTIFIER „ 1 DESCRIPTION The UTC SB360 is 3.0A schottky barrier rectifier. it uses UTC’s advanced technology to provide customers with high current capability and low forward voltage drop, etc.


    Original     		PDF SB360 SB360 DO-201AD DO-201AD SB360L-Z21D-R SB360G-Z21D-R QW-R601-081 SB360 diode SB360G sb360 DIODE schottky

    DI108S

    Abstract: SK5100 CP2506 sb5200 SB840
    Text: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose


    Original     		PDF 38x45Â DI108S SK5100 CP2506 sb5200 SB840

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD SB360 Preliminary DIODE 3 .0 A SCH OT T K Y BARRI ER RECT I FI ER ̈ 1 DESCRI PT I ON The UTC SB360 is 3.0A schottky barrier rectifier. it uses UTC’s advanced technology to provide customers with high current capability and low forward voltage drop, etc.


    Original     		PDF SB360 SB360 DO-201AD SB360L-Z21D-R SB360G-Z21D-R QW-R601-081

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		PDF MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45

    SB360 diode

    Abstract: SB320-SB3100 RS-296-E SB3100 SB320 SB330 SB340 SB350 SB360 SB380
    Text: SB320 – SB3100 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability


    Original     		PDF SB320 SB3100 DO-201AD DO-201AD, MIL-STD-202, SB360 diode SB320-SB3100 RS-296-E SB3100 SB320 SB330 SB340 SB350 SB360 SB380

    Untitled

    Abstract: No abstract text available
    Text: 产品规格书 Specification GD SB320S～GD SB360S GOODARK型号 构造 Construction: 用途 接受印栏 ： 金属结合型二极管 请记入贵公司的名称接受日期、责任者人名。 Schottky Barrier Diode : 高速整流用 Application : For High speed Rectifier


    Original     		PDF SB320Sï SB360S 1800pcs/box 000pcs/box

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount

    Untitled

    Abstract: No abstract text available
    Text: SB320 – SB3100 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features  Schottky Barrier Chip  Guard Ring Die Construction for Transient Protection  High Current Capability A B  Low Power Loss, High Efficiency  High Surge Current Capability


    Original     		PDF SB320 SB3100 DO-201AD DO-201AD, MIL-STD-202,

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		PDF MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent

    Untitled

    Abstract: No abstract text available
    Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320-G Thru. SB3100-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device DO-201AD Features -Low drop down voltage. -Metal-Semiconductor junction with guard ring 1.0 25.4 Min. 0.210(5.3) 0.189(4.8)


    Original     		PDF SB320-G SB3100-G DO-201AD UL94-V0 MIL-STD-750 SB350B-G SB360B-G SB380B-G SB3100B-G

    SB320-G

    Abstract: SB345-G SB350-G SB360-G SB380-G SB3100-G
    Text: Comchip Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320-G Thru. SB3100-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device DO-201AD Features -Low drop down voltage. 1.0 25.4 Min. -Metal-Semiconductor junction with guard ring 0.210(5.3) 0.189(4.8)


    Original     		PDF SB320-G SB3100-G DO-201AD UL94-V0 MIL-STD-750 45B-G SB350B-G SB360B-G SB380B-G SB345-G SB350-G SB360-G SB380-G SB3100-G

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		PDF MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode

    Untitled

    Abstract: No abstract text available
    Text: SB320 – SB3100 3.0A SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip     Guard Ring for Transient and ESD Protection Surge Overload Rating to 80A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency


    Original     		PDF SB320 SB3100 DO-201AD, MIL-STD-202, DO-201AD

    Untitled

    Abstract: No abstract text available
    Text: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320E-G Thru. SB3100E-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device DO-201AD Features -Low drop down voltage. -3.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free


    Original     		PDF SB320E-G SB3100E-G DO-201AD IEC6100-4-2 UL94-V0 MIL-STD-750 B360E SB380E SB3100E

    SB320E-G

    Abstract: SB345E-G SB350E-G SB360E-G SB380E-G SB3100E-G
    Text: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320E-G Thru. SB3100E-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device Features DO-201AD -Low drop down voltage. -3.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free


    Original     		PDF SB320E-G SB3100E-G DO-201AD IEC6100-4-2 UL94-V0 MIL-STD-750 B360E SB380E SB3100E SB345E-G SB350E-G SB360E-G SB380E-G SB3100E-G

    Untitled

    Abstract: No abstract text available
    Text: Comchip ESD Leaded Schottky Barrier Rectifiers SMD Diode Specialist SB320E-G Thru. SB3100E-G Voltage: 20 to 100 V Current: 3.0 A RoHS Device Features DO-201AD -Low drop down voltage. -3.0A operation at TA=75°C with no thermal runaway. -For use in low voltage, high frequency invertors free


    Original     		PDF SB320E-G SB3100E-G DO-201AD IEC6100-4-2 UL94-V0 MIL-STD-750 SB380E SB3100E SB320E

    transistor 2N5952

    Abstract: transistor KSP44 bc558 zener diode reference guide 1n967b schottky 1n5248 KBL BRIDGE RECTIFIER 005 FYPF2004DN BAV99Wt1g BC337
    Text: Small Signal Transistors & Diodes Selection Guide Fairchild Semiconductor, a long-time, leading global supplier of high performance semiconductors, offers a broad range of small signal transistor and diode products—from JFETs, Schottky, and rectifiers, to RF transistors, TRIACs and more. You will not only find the performance that you want, you will also


    Original     		PDF

    SB330

    Abstract: No abstract text available
    Text: SB320, SB330, SB340, SB350, SB360 www.vishay.com Vishay General Semiconductor Schottky Barrier Plastic Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High forward surge capability


    Original     		PDF SB320, SB330, SB340, SB350, SB360 22-B106 DO-201AD 2002/95/EC. 2002/95/EC 2011/65/EU. SB330

    motorola diode cross reference

    Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
    Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3


    OCR Scan     		PDF 1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"

    Lite-On Power Semiconductor

    Abstract: VISHAY diode MARKING er diode sb340
    Text: SB320-SB360 Vishay Lite-On Power Semiconductor 3.0A Schottky Barrier Rectifiers Features • Schottky barrier chip • Guard ring die construction for transient protection • High surge capability • Low power loss, high efficiency • Surge overload rating to 80A peak


    OCR Scan     		PDF SB320-SB360 SB320 SB330 SB340 SB350 SB360 D-74025 24-Jun-98 Lite-On Power Semiconductor VISHAY diode MARKING er diode sb340