diode smd 814 ST
Abstract: Transistor R25 diode 8847 DKF503 DKF203M1 DKF103*2 transistor 7S 732 DKA103M2 DKA202M2 DKA502M2
Text: g NTC THERMISTORS: TYPE DKM GLASS ENCAPSULATED DO-35 PACKAGE WITH SMD WIRE FORM DIMENSIONS: DESCRIPTION: A range of thermistors in DO-35 style glass package diode outline formed for surface lead-wires and applications with solder-coated copper-clad steel
|
Original
|
PDF
|
DO-35
DKF103M10
DKF203M10
DKF303M10
DKF503M10
DKF104M10
DKG204M10
DKD504M10
DKD105M10
diode smd 814 ST
Transistor R25
diode 8847
DKF503
DKF203M1
DKF103*2
transistor 7S 732
DKA103M2
DKA202M2
DKA502M2
|
DKA103M2
Abstract: DKA202M2 DKA502M2 DKF103M1 DKF103M2 DKF104M1 DKF203M1 DKF503M1 diode smd 814 ST DKA202*3
Text: NTC THERMISTORS: TYPE DKM GLASS ENCAPSULATED DO-35 PACKAGE WITH SMD WIRE FORM DIMENSIONS: DESCRIPTION: A range of thermistors in DO-35 style glass package diode outline formed for surface lead-wires and applications with solder-coated copper-clad steel lead-wires.
|
Original
|
PDF
|
DO-35
SystemD105M10
DKF103M2
DKF203M2
DKF303M2
DKF503M2
DKF104M2
DKA302M2
DKA103M2
DKA202M2
DKA502M2
DKF103M1
DKF103M2
DKF104M1
DKF203M1
DKF503M1
diode smd 814 ST
DKA202*3
|
DKA302
Abstract: diode smd 814 ST diode 8847
Text: NTC THERMISTORS: TYPE DK GLASS ENCAPSULATED DO-35 PACKAGE DESCRIPTION: A range of thermistors in DO-35 style glass package diode outline with axial solder-coated copper-clad steel lead-wires. FEATURES: • Cost effective solid state sensor • Designed for accurate temperature measurement,
|
Original
|
PDF
|
DO-35
286-1/EIA
RS-468A
temp32mm
DKA302
diode smd 814 ST
diode 8847
|
transistor SMD DK -RN
Abstract: DKF203 DKF104-10 diode smd 814 ST DKA202 DKD105 DO-35 PACKAGE thermistor
Text: g NTC THERMISTORS: TYPE DK CHIP THERMISTOR IN DO-35 GLASS PACKAGE DESCRIPTION: A range of NTC chip thermistors in DO-35 style glass package diode outline with axial solder-coated copper-clad steel wires. FEATURES: • Designed for accurate temperature measurement,
|
Original
|
PDF
|
DO-35
DKA302
transistor SMD DK -RN
DKF203
DKF104-10
diode smd 814 ST
DKA202
DKD105
DO-35 PACKAGE thermistor
|
DKA302
Abstract: 5234 DKF104-10 3540 C transistor SMD DK -RN DO-35 PACKAGE thermistor
Text: NTC THERMISTORS: TYPE DK CHIP THERMISTOR IN DO-35 GLASS PACKAGE DESCRIPTION: A range of NTC chip thermistors in DO-35 style glass package diode outline with axial solder-coated copper-clad steel wires. FEATURES: • Designed for accurate temperature measurement,
|
Original
|
PDF
|
DO-35
DKA302
5234
DKF104-10
3540 C
transistor SMD DK -RN
DO-35 PACKAGE thermistor
|
SMD ic 814 8pin
Abstract: dc SMD ic 814 8pin 4814 mosfet chip 6TPA47M IR10BQ015 LTC1622 Si3443DV
Text: DEMO MANUAL DC232 NO-DESIGN SWITCHER DESCRIPTIO LTC1622 Low Input Voltage Current Mode Step-Down DC/DC Converter U out, the external P-channel MOSFET is turned on continuously 100% duty cycle , providing low dropout operation with VOUT ≅ VIN. To further enhance efficiency at low load
|
Original
|
PDF
|
DC232
LTC1622
750kHz.
dc232
SMD ic 814 8pin
dc SMD ic 814 8pin
4814 mosfet chip
6TPA47M
IR10BQ015
Si3443DV
|
IR10BQ015
Abstract: LTC1622 6TPA47M Si3443DV SMD 1206 R1-10k LR120601R030F
Text: DEMO MANUAL DC232 NO-DESIGN SWITCHER DESCRIPTIO LTC1622 Low Input Voltage Current Mode Step-Down DC/DC Converter U out, the external P-channel MOSFET is turned on continuously 100% duty cycle , providing low dropout operation with VOUT ≅ VIN. To further enhance efficiency at low load
|
Original
|
PDF
|
DC232
LTC1622
750kHz.
JP2X3-079
DC232A-LTC1622
IR10BQ015
6TPA47M
Si3443DV
SMD 1206 R1-10k
LR120601R030F
|
2SD 4206
Abstract: str 5707 ky 201 thyristor scr ky 202 2SD 4206 npn gi 9444 diode TRANSISTOR SMD 9014 2SD 5703 STR 6757 TRANSISTOR SMD DK QC
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)
|
Original
|
PDF
|
MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
AMS-127B
2SD 4206
str 5707
ky 201 thyristor
scr ky 202
2SD 4206 npn
gi 9444 diode
TRANSISTOR SMD 9014
2SD 5703
STR 6757
TRANSISTOR SMD DK QC
|
TRANSISTOR SMD 613
Abstract: TRANSISTOR SMD DK QC transistor SMD DK -RN Sanken Schottky Diode Mi 15 spx 3955 SANKEN power supply diode zener smd sg 64 transistor SMD DK qs 301 miniature smd transistor KY smd transistor
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = Revision, see detail specification F = Active pull-down device (BiMOS only) -FP = Factory programmed -LC = Radial lead form LT = Tape and reel (package LH only)
|
Original
|
PDF
|
MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
AMS-127B
TRANSISTOR SMD 613
TRANSISTOR SMD DK QC
transistor SMD DK -RN
Sanken Schottky Diode Mi 15
spx 3955
SANKEN power supply
diode zener smd sg 64
transistor SMD DK qs
301 miniature smd transistor
KY smd transistor
|
GT30J124
Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.
|
Original
|
PDF
|
BCE0010E
BCE0010F
GT30J124
GT30F123
GT45F122
gt30g122
gt40j323
gt30g123
gt30f122
IGBT GT30J124
GT45f122 Series
gt45f123
|
str 5707
Abstract: 2SC 8050 scr ky 202 TRANSISTOR J 5804 NPN str 6709 TRANSISTOR J 5804 2sc 8188 lr 2905 transistor 2sc 8187 2SD 5703
Text: PART NUMBERING SYSTEMS ALLEGRO MICROSYSTEMS IC PART NUMBERS A 1234 E A F-1 Instructions optional; in the order listed . A or -A = (any letter) Revision, see detail specification F = Active pull-down device (BiMOS only) -1 = Selected version, see detail specification
|
Original
|
PDF
|
MS-001,
MS-010,
MS-011)
MS-010)
MS-018)
str 5707
2SC 8050
scr ky 202
TRANSISTOR J 5804 NPN
str 6709
TRANSISTOR J 5804
2sc 8188
lr 2905 transistor
2sc 8187
2SD 5703
|
GT45F122
Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
|
Original
|
PDF
|
BCE0010D
S-167
BCE0010E
GT45F122
gt30g122
gt30f122
gt45f123
GT45f122 Series
gt35j321
GT45G122
gt60n323
*45F122
GT45F124
|
I36 SMD
Abstract: FDMF6704A
Text: FDMF6704A - XSTM DrMOS tm The Xtra Small High Performance, High Frequency DrMOS Module Benefits General Description The XSTM DrMOS family is Fairchild’s next-generation fullyoptimized ultra-compact integrated MOSFET plus driver power stage solution for high current, high frequency synchronous
|
Original
|
PDF
|
FDMF6704A
I36 SMD
|
Untitled
Abstract: No abstract text available
Text: FDMF6704A - XSTM DrMOS The Xtra Small High Performance, High Frequency DrMOS Module Benefits tm General Description The XSTM DrMOS family is Fairchild’s next-generation fullyoptimized ultra-compact integrated MOSFET plus driver power stage solution for high current, high frequency synchronous
|
Original
|
PDF
|
FDMF6704A
|
|
|
Untitled
Abstract: No abstract text available
Text: FDMF6704 - XSTM DrMOS The Xtra Small High Performance, High Frequency DrMOS Module Benefits tm General Description The XSTM DrMOS family is Fairchild’s next-generation fullyoptimized ultra-compact integrated MOSFET plus driver power stage solution for high current, high frequency synchronous
|
Original
|
PDF
|
FDMF6704
|
18 ML 2A ptc
Abstract: Q6025LX FHN20G FHN26G2 pico electronics transformers 1500w tvs diode SMD FHN26G2, ROHS DIODE 3A do-214 RECTIFIER D6025L 1.5ke series
Text: CIRCUIT PROTECTION SOLUTIONS Electronics Circuit Protection Product Selection Guide DO W Lit N te LO lfu A se D .co C m AT /c A at LO alo G gs S A guide to selecting Littelfuse circuit protection components for electronic applications. Broadest and Deepest
|
Original
|
PDF
|
EC102
EC1102v1E1007
18 ML 2A ptc
Q6025LX
FHN20G
FHN26G2
pico electronics transformers
1500w tvs diode SMD
FHN26G2, ROHS
DIODE 3A do-214
RECTIFIER D6025L
1.5ke series
|
yw-360-02b
Abstract: PC40HEER35-Z
Text: Title Reference Design Report for 14.5 W Standby and 300 W Main Power Supply Using HiperTFS TFS762HG Specification 300 VDC – 385 VDC Input; 5 V, 2.9 A Standby and 12 V, 25 A (Main) Outputs Application PC Power Supply Author Applications Engineering Department
|
Original
|
PDF
|
TFS762HG
RDR-249
yw-360-02b
PC40HEER35-Z
|
samsung ssl electrolytic capacitor
Abstract: yw-360-02b PC40HEER35-Z n 4113 bobbin EER35 C2004-12-02 TRK-24 1N4007 MINI MELF YC-3508 TFS762HG
Text: Title Reference Design Report for 14.5 W Standby and 300 W Main Power Supply Using HiperTFS TFS762HG Specification 300 VDC – 385 VDC Input; 5 V, 2.9 A Standby and 12 V, 25 A (Main) Outputs Application PC Power Supply Author Applications Engineering Department
|
Original
|
PDF
|
TFS762HG
RDR-249
samsung ssl electrolytic capacitor
yw-360-02b
PC40HEER35-Z
n 4113
bobbin EER35
C2004-12-02
TRK-24
1N4007 MINI MELF
YC-3508
TFS762HG
|
Untitled
Abstract: No abstract text available
Text: DAF 811 A /K . DAF 814 A/K Fast Switching Diode Arrays Schnelle Dioden Sätze Nominal power dissipation Verlustleistung 1-1 1.2 W Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Glasgehäuse 100.400 V 24 x 3 x 5.1 [mm] Weight approx.
|
OCR Scan
|
PDF
|
G0174
000017S
|
Untitled
Abstract: No abstract text available
Text: DA 811 A /K . DA 8110 A/K Diode Arrays Dioden Sätze Nominal power dissipation Verlustleistung 1.2 W Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Glasgehäuse 100. 1000 V 24 x 3 x 5.1 [mm] Weight approx. Gewicht ca. 0,6 g
|
OCR Scan
|
PDF
|
G0174
|
q406 transistor
Abstract: nf 820 transistor q406 q406 transistor data
Text: SN 7000 I nf ineon technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Type ybs SN 7000 60 V Type SN 7000 SN 7000 Ordering Code Q62702-S638 Q62702-S637 0.25 A ^DS(on) Package Marking 5Q
|
OCR Scan
|
PDF
|
Q62702-S638
Q62702-S637
E6288
E6296
S35bG5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
q406 transistor
nf 820
transistor q406
q406 transistor data
|
8 PIN SMD IC L02
Abstract: inductor neosid VCO 2230 L02 SMD neosid 4,7 K fn VCO 2230 MHz l02 fm transmitter 8 pin
Text: 8 m? SIEM EN S FM -Transm itter PMB 2230 Prelim inary Data Bipolar 1C Features R edu ced e xte rn a l c o m pone nts High d e c o u p lin g of RF V C O from en tire chip B alance d RF V C O and tra n s m it V C O fo r high com m on m o de re je ction H igh d e c o u p lin g of RF V C O and tra n s m it V C O and
|
OCR Scan
|
PDF
|
2230-S
Q67006-A6047
ITD03B23
90-MHz
P-DSO-24-4
PS05388
8 PIN SMD IC L02
inductor neosid
VCO 2230
L02 SMD
neosid 4,7 K fn
VCO 2230 MHz
l02 fm transmitter 8 pin
|
PH C5V1
Abstract: C5V6 ph PH C6V2 ic SMD MARKING CODE ad 5.9 C8V2 PH ph c8v2
Text: DISCRETE SEMICONDUCTORS Preliminary specification File under Discrete Semiconductors, SC01 Philips Sem iconductors 1998 Aug 05 PHILIPS Philips Semiconductors Preliminary specification Voltage regulator diodes BZX84LN series PINNING FEATURES • Total power dissipation: max. 250 mW
|
OCR Scan
|
PDF
|
BZX84LN
BZX84LN-B)
BZX84LN-C)
PH C5V1
C5V6 ph
PH C6V2
ic SMD MARKING CODE ad 5.9
C8V2 PH
ph c8v2
|
CD4017 smd
Abstract: Ic cd4060 pin configuration 7012 smd ic CD4541 equivalent CD4010 circuit pin configuration cd4541 application CD4050AFB CD4017 equivalent CD4013BFB 4018A
Text: CMOS Logic ICs - CD4000B Series Features Compliance to MIL-STD-883 The Harris High-Reliability C D 400 0B S er es of high-voltage Harris C D 4 0 0 0 Series parts are in full compliance with Para graph 1.2.1 of M IL-S TD -883. Product is provided to m eet the
|
OCR Scan
|
PDF
|
CD4000B
MIL-STD-883
CD4000B-JAN
CD4000A-JAN
CD4000A
CD4017 smd
Ic cd4060 pin configuration
7012 smd ic
CD4541 equivalent
CD4010 circuit pin configuration
cd4541 application
CD4050AFB
CD4017 equivalent
CD4013BFB
4018A
|
