diode sod-123 marking code 120
Abstract: diode sod-123 marking code t2 BA 141 diode
Text: BAV19W-BAV21W SOD-123 Plastic-Encapsulate Diodes SOD-123 FAST SWITCHING DIODE FEATURES MARKING: BAV19W: A8 BAV20W: T2 BA 2 W T3 BAV21W: Pb-Free package is available RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
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BAV19W-BAV21W
OD-123
OD-123
BAV19W:
BAV20W:
BAV21W:
diode sod-123 marking code 120
diode sod-123 marking code t2
BA 141 diode
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MBR120
Abstract: SOD123FL MBR120LSFT1 MBR120LSFT3
Text: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120LSFT1
r14525
MBR120LSFT1/D
MBR120
SOD123FL
MBR120LSFT1
MBR120LSFT3
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MBR140SFT1
Abstract: MBR140SFT3 SOD-123LF
Text: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR140SFT1
r14525
MBR140SFT1/D
MBR140SFT1
MBR140SFT3
SOD-123LF
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MARKING L3L
Abstract: MSC 0036 MBR130LSFT1 code l3l
Text: MBR130LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR130LSFT1
OD-123
MBR130LSFT1/D
MARKING L3L
MSC 0036
MBR130LSFT1
code l3l
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L2ED
Abstract: MBR120ESFT1 MBR120ESFT3
Text: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120ESFT1
r14525
MBR120ESFT1/D
L2ED
MBR120ESFT1
MBR120ESFT3
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MBR140SFT1
Abstract: MBR140SFT3
Text: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR140SFT1
OD-123
MBR140SFT1/D
MBR140SFT1
MBR140SFT3
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MBR140SF
Abstract: L4f marking marking L4F
Text: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR140SFT1
OD-123
38x38
MBR140SF
L4f marking
marking L4F
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Untitled
Abstract: No abstract text available
Text: MBR120ESFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120ESFT1
OD-123
38x38
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Untitled
Abstract: No abstract text available
Text: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120VLSFT1
OD-123
38x38
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Untitled
Abstract: No abstract text available
Text: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120LSFT1
OD-123
38x38
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MARKING L3L
Abstract: No abstract text available
Text: MBR130LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR130LSFT1
OD-123
38x38
MARKING L3L
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diode e4f
Abstract: No abstract text available
Text: MBR140ESF, NRVB140ESF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR140ESF,
NRVB140ESF
MBR140ESF/D
diode e4f
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Untitled
Abstract: No abstract text available
Text: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120VLSFT1
MBR120VLSFT1/D
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Untitled
Abstract: No abstract text available
Text: MBR140ESF, NRVB140ESF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR140ESF,
NRVB140ESF
MBR140ESF/D
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MBR120VLSFT1G
Abstract: MBR120VLSFT3G MBR120VLSFT1 MBR120VLSFT3
Text: MBR120VLSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120VLSFT1
OD-123
MBR120VLSFT1/D
MBR120VLSFT1G
MBR120VLSFT3G
MBR120VLSFT1
MBR120VLSFT3
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Untitled
Abstract: No abstract text available
Text: MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high
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MBR120ESFT1G,
NRVB120ESFT1G,
MBR120ESFT3G,
NRVB120ESFT3G
MBR120ESFT1/D
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MBR120LSFT1
Abstract: MBR120LSFT1G MBR120LSFT3 MBR120LSFT3G Diode SOd-123 marking cu
Text: MBR120LSFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120LSFT1
OD-123
MBR120LSFT1/D
MBR120LSFT1
MBR120LSFT1G
MBR120LSFT3
MBR120LSFT3G
Diode SOd-123 marking cu
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Untitled
Abstract: No abstract text available
Text: MBR120ESF, NRVB120ESF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR120ESF,
NRVB120ESF
OD-123
MBR120ESFT1/D
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MBR120
Abstract: No abstract text available
Text: MBR120ESFT1G, NRVB120ESFT1G, MBR120ESFT3G, NRVB120ESFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high
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MBR120ESFT1G,
NRVB120ESFT1G,
MBR120ESFT3G,
NRVB120ESFT3G
OD-123
MBR120ESFT1/D
MBR120
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NRVB140SF
Abstract: No abstract text available
Text: MBR140SF, NRVB140SF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR140SF,
NRVB140SF
OD-123
MBR140SFT1/D
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Untitled
Abstract: No abstract text available
Text: SIEMENS • âE3SL05 000^427 74D Silicon Variable Capacitance Diode BB 419 • For VHF tuned circuit applications Type Marking Ordering Code tape and reel BB 419 white 2 Q62702-B499 Pin Configuration Package1) SOD-123 ky- o2 1 i^ i o -1
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E3SL05
Q62702-B499
OD-123
EHA0700I
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S 187 Siemens
Abstract: MARKING CODE 515 diode marking 515 DIODE T28
Text: SIEMENS Silicon Variable Capacitance Diode BB 515 • For UHF and VHF TV/VTR tuners • Large capacitance ratio • Low series resistance Type BB 515 Ordering Code tape and reel 1 2 Q62702-B607 C A Pin Configuration Marking Package white S SOD-123 Maximum Ratings
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Q62702-B607
OD-123
S 187 Siemens
MARKING CODE 515
diode marking 515
DIODE T28
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sod123 marking siemens
Abstract: No abstract text available
Text: Silicon Tuning Diode BB 811 • Frequency range up to 2 GHz; special design for use in TV-sat indoor units Type Marking Ordering code taped Package BB 811 white/T. Q62702-B478 SOD-123 Maximum Ratings Parameter Symbol Value Unit Reverse voltage 30 V Forward current, 7a < 60 °C
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Q62702-B478
OD-123
sod123 marking siemens
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Untitled
Abstract: No abstract text available
Text: SG S -T H O M S O N s m 6T 6V 8, a /22 o , a SM 6T6V8C,CA/220C,CA TRANSIL FEATURES • PEAK PULSE POWER= 600 W @ 1ms. ■ BREAKDOWN VOLTAGE RANGE : From 6V8 to 220 V. ■ UNI AND BIDIRECTIONAL TYPES. ■ LOW CLAMPING FACTOR. ■ FAST RESPONSE TIME: Tclamping : 1ps 0 V to VBR .
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CA/220C
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