SDB4301F
Abstract: ksd80 Schottky Barrier Diode SOT-89 Schottky Diode SOT-89 forward current 1
Text: SDB4301F Semiconductor Schottky Barrier Diode Features • High frequency rectified • Silicon epitaxial type • High reliability Ordering Information Type NO. Marking Package Code 4301 SOT-89 SDB4301F Outline Dimensions unit : mm 4.0 0.50±0.1 2.5 -0.3
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SDB4301F
OT-89
KSD-8001-001
SDB4301F
ksd80
Schottky Barrier Diode SOT-89
Schottky Diode SOT-89 forward current 1
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sot-23 marking code sf
Abstract: Marking ss SOT-23 BD1701 MMBD1701 MMBD1701A MMBD1703 MMBD1703A MMBD1704 MMBD1705 sot-23 Marking B1
Text: 3 CONNECTION DIAGRAMS 85 3 1 3 1701 2 2 NC 1 2 SOT-23 MMBD1701 MMBD1703 MMBD1704 MMBD1705 1 MARKING 85 MMBD1701A 87 MMBD1703A 88 MMBD1704A 89 MMBD1705A 1 1 2 1703 2 3 3 1704 85A 87A 88A 89A 3 1 1705 2 High Conductance Low Leakage Diode Sourced from Process 1T.
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OT-23
MMBD1701
MMBD1703
MMBD1704
MMBD1705
MMBD1701A
MMBD1703A
MMBD1704A
MMBD1705A
sot-23 marking code sf
Marking ss SOT-23
BD1701
MMBD1701
MMBD1701A
MMBD1703
MMBD1703A
MMBD1704
MMBD1705
sot-23 Marking B1
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NTA4153NT1G
Abstract: NTE4153NT1G NTA4153N NTA4153NT1 NTE4153N sot416
Text: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate Pb−Free Packages are Available
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NTA4153N,
NTE4153N
SC-75
SC-89
NTA4153N/D
NTA4153NT1G
NTE4153NT1G
NTA4153N
NTA4153NT1
NTE4153N
sot416
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diode T3 Marking
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode LM1MA141WKT1G LM1MA142WKT1G This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC-70 package which is designed for low power surface mount applications.
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LM1MA141WKT1G
LM1MA142WKT1G
SC-70
70/SOTâ
LM1MA141WKT1G
diode T3 Marking
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed LM1MA141KT1G LM1MA142KT1G switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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LM1MA141KT1G
LM1MA142KT1G
70/SOTâ
OT-323/SC-70
3000/Tape
LM1MA141KT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Pb−Free Packages are Available
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NTA4153N,
NTE4153N
SC-75
SC-89
NTE4153N
SC-89*
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476A diode
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Cathode Silicon Dual Switching Diode This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–89 package which is designed for low
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LDAN222T1
SC-89
476A diode
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diode LM1MA141WAT1G LM1MA142WAT1G This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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LM1MA141WAT1G
LM1MA142WAT1G
SC-70/SOT-323
OT-323/SC-70
3000/Tape
LM1MA141KWA3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode LMVL3401T1G This device is designed primarily for VHF band switching applications but is also suitable for use in general–purpose switching circuits. Supplied in a Surface Mount package. • Rugged PIN Structure Coupled with Wirebond Construction
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LMVL3401T1G
OD-323
3000/Tape
LMVL3401T3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Silicon Pin Diode LMBV3401LT1G This device is designd primarily for VHF band switching applications but is also suitable for use in general-purpose switching circuits.Supplied in a surface Mount package. SILICON PIN SWITCHING DIODE
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LMBV3401LT1G
20Vdc
100MHzâ
34Ohms
10mAdc
236AB)
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features LBAS70XLT1G Low forward current High breakdown voltage Guard ring protected Low diode capacitance. 3 APPLICATIONS 1 Ultra high-speed switching Voltage clamping Protection circuits. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for
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LBAS70XLT1G
LBAS70LT1G
LBAS70LT3G
LBAS70-04LT1G
LBAS70-04LT3G
LBAS70-05LT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE Features Low forward current Guard ring protected Low diode capacitance. LBAS40XLT1G 3 APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. Blocking diodes. DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for
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LBAS40XLT1G
LBAS40LT1G
LBAS40LT3G
LBAS40-04LT1G
LBAS40-04LT3G
LBAS40-05LT1G
LBAS40-05LT3G
LBAS40-06LT1G
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NTA4153N
Abstract: NTA4153NT1 NTA4153NT1G NTE4153N NTE4153NT1G
Text: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Pb−Free Packages are Available
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NTA4153N,
NTE4153N
SC-75
SC-89
NTA4153N/D
NTA4153N
NTA4153NT1
NTA4153NT1G
NTE4153N
NTE4153NT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Serise Switching Diodes LBAV99WT1G LBAV99RWT1G Features • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish The LBAV99WT1 is a smaller package, equivalent to the LBAV99LT1. Suggested Applications
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LBAV99WT1G
LBAV99RWT1G
LBAV99WT1
LBAV99LT1.
LBAV99WT1
OT-323
SC-70)
LBAV99RWT1
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NVA4153NT1G
Abstract: No abstract text available
Text: NTA4153N, NTE4153N, NVA4153N, NVE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 http://onsemi.com Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate
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NTA4153N,
NTE4153N,
NVA4153N,
NVE4153N
NTA4153N/D
NVA4153NT1G
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAW56WT1G z Pb-Free Package is Available. 3 DEVICE MARKING 1 LBAW56WT1G = A1 2 MAXIMUM RATINGS TA = 25°C CASE 419–04, STYLE 4 Rating Symbol Max Unit Reverse Voltag VR Forward Current Peak Forward Surge Current
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LBAW56WT1G
3000/Tape
LBAW56WT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Switching Diodes LBAV70WT1G FEATURE ƽSmall plastic SMD package. 3 ƽFor high-speed switching applications. ƽPb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBAV70WT1G A4 3000/Tape&Reel
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LBAV70WT1G
3000/Tape
LBAV70WT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Dual Series Switching Diode This switching diode has the following features: . Low Leakage Current Applications . Medium Speed Switching Times LBAV199LT1G . Pb-Free Package is Available. 3 2 CATHODE 1 ANODE 1 3 CAHODE/ANODE 2 CASE 318–08, STYLE 11
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LBAV199LT1G
236AB)
3000/Tape
LBAV199LT3G
10000/Tape
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NTA4153NT1G
Abstract: No abstract text available
Text: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage ESD Protected Gate Pb−Free Packages are Available
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NTA4153N,
NTE4153N
SC-75
SC-89
NTA4153N/D
NTA4153NT1G
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Untitled
Abstract: No abstract text available
Text: NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • http://onsemi.com Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate Pb−Free Packages are Available
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NTA4153N,
NTE4153N
NTA4153N/D
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TRANSISTOR L 287 A
Abstract: 2SD2170 CE marking code diode sc-62
Text: 2SD2170 Transistor, NPN, Darlington pair Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2170; DM-*, where ★ is hFE code • built-in 90 J ” V Zener diode between collector and base • low fluctuation of Zener voltage
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OCR Scan
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2SD2170
OT-89,
SC-62)
2SD2170;
Para10
2SD2170
2SD2170,
TRANSISTOR L 287 A
CE marking code
diode sc-62
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diode marking gg 2a
Abstract: BAW79C 79AB
Text: Silicon Switching Diodes • • • BAW 79 A BAW 79 D For high-speed switching High breakdown voltage Common cathode Type BAW BAW BAW BAW 79 79 79 79 A B C D Marking Ordering code for versions in bulk Ordering code for versions on 12 mm-tape Package GE GF
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OCR Scan
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Q62702-A679
Q62702-A680
Q62702-A681
Q62702-A682
Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
diode marking gg 2a
BAW79C
79AB
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diode sot-89 marking code
Abstract: sot-89 Marking LB marking QE diode marking gg 2a BH SOT-89 Q62702-A77 marking gg sot-89
Text: • Silicon Switching Diodes SIEMEN S/ SPCL-, ÔS3L.320 OOlbSSÔ fl W Ê Z I P BAW 79 A SEMICONDS 32E D -B AW 79 D r-eS 'U • • • For high-speed switching High breakdown voltage Common cathode Typo Marking Ordering code for versions In bulk Ordering code for
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OCR Scan
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Q62702-A679
Q62702-A680
Q62702-A681
Q62702-A682
Q62702-A781
Q62702-A782
Q62702-A771
Q62702-A733
pac10
BAW79A
diode sot-89 marking code
sot-89 Marking LB
marking QE
diode marking gg 2a
BH SOT-89
Q62702-A77
marking gg sot-89
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Untitled
Abstract: No abstract text available
Text: 3SE D • 6231,350 OQlbSSS S H S I P Silicon Switching Diodes SIEM EN S/ SPCLi SENICONDS • • T-£>3~\{ _ BAW 78 A -BAW 78D Switching applications High breakdown voltage Type Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape
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OCR Scan
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Q62702-A675
Q62702-A676
Q62702-A677
Q62702-A678
Q62702-A778
Q62702-A779
Q62702-A784
Q62702-A109
BAW78D
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