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    DIODE SS16 Search Results

    DIODE SS16 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SS16 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SR506 Diode

    Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
    Text: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41


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    SMD4001-4007) SR560 DO-27 UF4004 DO-41 UF4007 10A10 LL4148 FR101-FR107 SR506 Diode diode 6A 1000v SM4007 Diode Diode SR360 diode her307 PDF

    RB160-40

    Abstract: KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11
    Text: Small Signal Switching and Schottky Diodes Family Application Comchip Vishay / G ON-Semi Diode Inc. Philips Rohm Switching Diode High Speed CDSL4148 LL4148 LL4148 LL4148 PMLL4148 RLS4148 Family Application Comchip Vishay / G ON-Semi CDSF335 BAS16WS CDSF4148


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    CDSL4148 LL4148 PMLL4148 RLS4148 CDSF335 BAS16WS CDSF4148 1N4148WS RB160-40 KBPC10010 MP1008 zener diode sod80 rohm MMBZ524B RLR4002 SMAZ56 DIODE US1J KBPC5010 SMAJ11 PDF

    2510W

    Abstract: RS1M diode
    Text: Email: [email protected] Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10


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    DO-214AC ABS10 LL4148 MB10S SM4007 MB10M DB101-DB107; DB151-DB157 DB101S-DB107S; 2510W RS1M diode PDF

    diode MARKING CODE SS16

    Abstract: 403D SS16 Diode SS16T3
    Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    SS16 Diode

    Abstract: SS16 DIODE schottky marking code ss16 SS16 MARKING
    Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    1E-02 1E-03 1E-04 1E-05 1E-06 SS16 Diode SS16 DIODE schottky marking code ss16 SS16 MARKING PDF

    SS16 DIODE

    Abstract: 403D SS16
    Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    r14525 SS16/D SS16 DIODE 403D SS16 PDF

    403D

    Abstract: SS16 SS16T3
    Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    SS16/D 403D SS16 SS16T3 PDF

    SS16 DIODE schottky

    Abstract: SS16 Diode 1ss16 SMA CASE 403D-02 403D SS16 diode MARKING CODE SS16
    Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    r14525 SS16/D SS16 DIODE schottky SS16 Diode 1ss16 SMA CASE 403D-02 403D SS16 diode MARKING CODE SS16 PDF

    Untitled

    Abstract: No abstract text available
    Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    SS16/D PDF

    "Power Diode"

    Abstract: marking code ss16 SS16 DIODE schottky 403D SS16 SS16T3 SS16T3G
    Text: SS16 Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    SS16/D "Power Diode" marking code ss16 SS16 DIODE schottky 403D SS16 SS16T3 SS16T3G PDF

    SS16T3G

    Abstract: SBRA8160
    Text: SS16T3G, SBRA8160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    SS16T3G, SBRA8160T3G SS16/D SS16T3G SBRA8160 PDF

    Untitled

    Abstract: No abstract text available
    Text: SS16T3G, SBRA8160T3G Surface Mount Schottky Power Rectifier SMA Power Surface Mount Package http://onsemi.com These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


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    SS16T3G, SBRA8160T3G SS16/D PDF

    DI108S

    Abstract: SK5100 CP2506 sb5200 SB840
    Text: Diode & Rectifiers Diode & Rectifiers MERITEK RoHS TABLE OF CONTENT • PLASTIC PASSIVATED JUNCTION RECTIFIER o General Purpose


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    38x45Â DI108S SK5100 CP2506 sb5200 SB840 PDF

    Quality Technologies optocouplers

    Abstract: B613 IC 1296 QT OPTOELECTRONICS MOC8030 MOC8050 PONT DIODE 0884 qt
    Text: PHOTODARLINGTON OPTOCOUPLERS Preliminary NO BASE CONNECTION MOC8030 MOC8050 DESCRIPTION PACKAGE DIMENSIONS The MOC8030 and MOC8050 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.


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    MOC8030 MOC8050 MOC8030 MOC8050 MOC8030) MOC8050) E90700 SS16/1, HP19-3EY 00035A Quality Technologies optocouplers B613 IC 1296 QT OPTOELECTRONICS PONT DIODE 0884 qt PDF

    br 123 s

    Abstract: BAS54A BR3005 MS15N50 sod-23 BAS54C
    Text: Bruckewell Technology Corp., Ltd. Your Best Partner Discrete Semiconductor Product Catalogue 2015 version Diode/ Rectifier MOSFET TVS/ ESD Protector Comp pany Profile P e Bru uckewell teechnology corp. c registe ered in Dela aware, USA A and total capital


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    O-252 O-277A O-277B MA/DO-214AC DO-214A MC/DO-214AB br 123 s BAS54A BR3005 MS15N50 sod-23 BAS54C PDF

    SS14 DIODE schottky

    Abstract: diode SS12 sma SS14T3 diode ss12 SS14 DIODE SS14 DIODE schottky G SS18-T3 S100 SS13 SS15
    Text: SS12 – S100 WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! ! ! ! ! ! Ideally Suited for Automatic Assembly B Low Power Loss, High Efficiency Surge Overload Rating to 30A Peak For Use in Low Voltage Application


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    SMA/DO-214AC SMA/DO-214AC, MIL-STD-750, SS14 DIODE schottky diode SS12 sma SS14T3 diode ss12 SS14 DIODE SS14 DIODE schottky G SS18-T3 S100 SS13 SS15 PDF

    AN2051

    Abstract: EEEHA2A220P LM5050-2 SS16T3G LM5050-2EVAL 600w schematic diagram switching power supply power supply schematic 60v AN-2051
    Text: LM5050-2EVAL Evaluation Board LM5050-2EVAL Evaluation Board National Semiconductor Application Note 2051 Donald P. Jones November 1, 2010 Introduction The LM5050-2 evaluation board is designed to demonstrate the capabilities of the LM5050-2 OR-ing Diode Controller. It


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    LM5050-2EVAL LM5050-2 LM5050-2. AN-2051 AN2051 EEEHA2A220P SS16T3G 600w schematic diagram switching power supply power supply schematic 60v AN-2051 PDF

    LL5817

    Abstract: smd ss12 DIODE SS34 LL5818 LL5819 SS13 SS14 SS15 SS16 SS19
    Text: SURFACE MOUNT: Super Fast Recovery Schottky & Bridge Rectifiers SUPER FAST RECOVERY DIODE Part CrossMax.Average Peak Peak Fwd Surge Max Forward Max. Reverse Max Reverse Package Number Reference Rect. Current Inverse Current @ 8.3ms Voltage @ Ta 25 C Current @ 25 C Recovery Time


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    C3B03 LL5817 smd ss12 DIODE SS34 LL5818 LL5819 SS13 SS14 SS15 SS16 SS19 PDF

    DIODE SOT-23 PACKAGE

    Abstract: dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402
    Text: SURFACE MOUNT: Switching Diodes MELF & SOT-23 SURFACE MOUNT SWITCHING DIODE RFE CrossPower Peak Max.Average Part Number Reference Dissipation Voltage Rect. Current Forward Voltage Pd mW VZM(V) IO(mA) VF(V)@IF(mA) Maximum Rev. Current Max. Reverse Package


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    OT-23 LL4148 DL4148 500mW LL4448 DL4448 OT-23 Part54G DBS155G DIODE SOT-23 PACKAGE dbs107 mmbd2836 Bridge rectifier DF08 s1g 28 diode BAS21 DL4148 LL4148 LL4448 MMBD1402 PDF

    ss12

    Abstract: No abstract text available
    Text: SS12 – S100 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Forward Voltage       Epitaxial Construction with Oxide Passivation Guard Ring for Transient and ESD Protection Surge Overload Rating to 30A Peak


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    SMA/DO-214AC, MIL-STD-750, ss12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SS12 – S100 WTE POWER SEMICONDUCTORS Pb 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Features  Schottky Barrier Chip       Ideally Suited for Automatic Assembly B Low Power Loss, High Efficiency Surge Overload Rating to 30A Peak For Use in Low Voltage Application


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    SMA/DO-214AC SMA/DO-214AC, PDF

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SNVA483B – October 2011 – Revised May 2013 AN-2148 LM5051MAEVAL Evaluation Board 1 Introduction The LM5051 evaluation board is designed to demonstrate the capabilities of the LM5051 OR-ing diode controller. One low-side N-channel power MOSFET is used per channel. The LM5051 evaluation board


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    SNVA483B AN-2148 LM5051MAEVAL LM5051 SNVS702) PDF

    motorola diode cross reference

    Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
    Text: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3


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    1N5817 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 11DQ03 11DQ04 motorola diode cross reference replacement UF5402 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement" PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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