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    DIODE SY 192 Search Results

    DIODE SY 192 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    DIODE SY 192 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Type BSS131 SIPMOS Small-Signal-Transistor Product Summary Feature • N-Channel • Enhancement mode VDS 240 V RDS on ,max 14 Ω ID 0.1 A • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant PG-SOT-23 • Qualified according to AEC Q101


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    PDF BSS131 PG-SOT-23 IEC61249-2-21 PG-SOT23 H6327

    DXT170-71-1

    Abstract: SYJ314R-5G-Q DXT170 SYJ300-9-1-Q SYJ512M SYJ314R solenoid valve 24v ss3yj3 diode sy 171 sy 171
    Text: 3 Port Solenoid Valve Rubber Seal Series SYJ300/500/700 SY Low power consumption: 0.5W Without light (Current draw: 21mA at 24V DC) Completely interchangeable with the previous series VJ300/500/700 and VZ300/500. Series VZ SYJ300 VJ300 SYJ500 VJ500 VZ300


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    PDF SYJ300/500/700 VJ300/500/700 VZ300/500. VJ300 SYJ500 VJ500 VZ300 SYJ700 VJ700 SYJ300 DXT170-71-1 SYJ314R-5G-Q DXT170 SYJ300-9-1-Q SYJ512M SYJ314R solenoid valve 24v ss3yj3 diode sy 171 sy 171

    SYJ3120-5G-M3-Q

    Abstract: DXT170-71-1 SYJ3000-14-6 VJ7000 VJ3000-13-1 SYJ3000-21-2A-Q SYJ3000-21-1A-Q diode sy 166 SYJ5143-5LOU-Q SY100-30-4A
    Text: 4, 5 Port Solenoid Valve Rubber Seal Series SYJ3000/5000/7000 SV Low power consumption: 0.5W Without light SY (Current draw: 21mA at 24V DC) SYJ Bright colour tone and state of the art design SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD Completely interchangeable with


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    PDF SYJ3000/5000/7000 VJ3000/5000/7000 VZ3000/5000 VJ3000/5000/7000 VZ3000/5000. SYJ3000 VJ3000 SYJ5000 VJ5000 VZ3000 SYJ3120-5G-M3-Q DXT170-71-1 SYJ3000-14-6 VJ7000 VJ3000-13-1 SYJ3000-21-2A-Q SYJ3000-21-1A-Q diode sy 166 SYJ5143-5LOU-Q SY100-30-4A

    SMC - SY5120

    Abstract: SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode
    Text: High Capacity & Simple Choices Series SY 5 Port Rubber Seal Solenoid Valve SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 Series SY9000 newly realased 1.2-1 CE Marking Compliant Products The SY series complies with the EMC Directive and the Low Energy Directive based


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    PDF SY9000 SY3000 SY5000 SY7000 SMC - SY5120 SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UTT120P06 Preliminary Power MOSFET 1 2 0 A, 6 0 V P-CH AN N EL POWER M OSFET ̈ DESCRI PT I ON The UTC UTT120P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also


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    PDF UTT120P06 UTT120P06 UTT120P06L-TA3-T UTT120P06G-TA3-T QW-R502-728

    smc vt301

    Abstract: diode P033 breather valve VT317V solenoid direction control valve connection 220v ac 220v ac solenoid valve L146 DXT060-51-13 varister symbol VT307E
    Text: 3 Port Direct Operated Poppet Rubber Seal Series VT307 Model Large Flow Capacity, yet Compact Size. Dimensions W X H X D •·····30 X 54.5 X 33 VT307······Nl/min 206.02 or more, 1/4 Low Power Consumption VT/VO307······4.8W DC/Standard Style


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    PDF VT307 VT307· VT/VO307· VT/VO307Y VT/VO307W VT/VO307V, VT/VO307W) VT307E VT307Y smc vt301 diode P033 breather valve VT317V solenoid direction control valve connection 220v ac 220v ac solenoid valve L146 DXT060-51-13 varister symbol VT307E

    LX109

    Abstract: No abstract text available
    Text: SC192 Synchronous Buck Converter with Integrated Power Devices POWER MANAGEMENT Description Features ‹ 2.7V to 7V Input Range ‹ Output Adjustable from 0.75V to Vin ‹ Fixed Frequency or PSAVE for Maximum The SC192 is a synchronous step-down converter with


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    PDF SC192 SC192 700mA LX109

    diode sy 715

    Abstract: SC192 SC192EVB SC192IMLTR SC192IMLTRT SY 715
    Text: SC192 2.7V to 5.5V Input Synchronous Buck Converter w/Integrated Power Devices POWER MANAGEMENT Description Features ‹ 2.7V to 5.5V Input Range ‹ Output Adjustable from 0.75V to Vin ‹ Fixed Frequency or PSAVE for Maximum The SC192 is a synchronous step-down converter with


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    PDF SC192 700mA MLPD-10 SC192 MLPD-10, diode sy 715 SC192EVB SC192IMLTR SC192IMLTRT SY 715

    diode sy 345

    Abstract: diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337
    Text: SERVICE-MITTEILUNGEN V E B R F T I N D U S T R I E V E R T R I E B R U N D F U N K UND F E R N S E H E N t B i n n a |r a d i o - t e l e v i s i o n I Ausgobe 1-2 _ _ Febr. 89 1-7 Mitteilung aus dam VEB RFT IV RuF Leipzig, Organisation Plan der Inventurtermine Ersatztell/sroßhandel 1989


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    PDF III/18/379 diode sy 345 diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337

    Diode KD 514

    Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
    Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381


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    Halbleiterbauelemente DDR

    Abstract: GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170
    Text: eiecrronic Halbleiter-Bauelemente Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenndaten der in der DD R gefertigten H albleiterbauelem ente. Die Kennwerte werden im allgem einen für eine Um gebungs­ temperatur von 25 °C angegeben.


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    PDF DOR102 Halbleiterbauelemente DDR GAZ17 diode sy-250 "halbleiterwerk frankfurt" sal41 diode sy-170 SF 127 diode say17 Halbleiter-Bauelemente DDR SY 170

    integrated circuits equivalents list

    Abstract: FCH161 FCH181 FCH191 FJJ14 7400N FCL101 equivalent 7420N FCL101 FJH111
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS Mullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC •RC ■RC ■RC ■RC ■RC RC RC RC RC ■RC RC 224 225 226 227 231 234 236 246 261 266 286 296 Mullard comparable


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    PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N integrated circuits equivalents list FCH161 FCH181 FCH191 FJJ14 FCL101 equivalent FJH111

    fch131

    Abstract: integrated circuits equivalents list rc 261 7400N FJJ14 FCL101 FCH131 equivalent ttl NAND gate with expander 7402N 7420N
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable


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    PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N fch131 integrated circuits equivalents list rc 261 FJJ14 FCH131 equivalent ttl NAND gate with expander

    integrated circuits equivalents list

    Abstract: FCY101 FCH151 FCH191 7400N 7402N 7420N FCL101 FJH101 FJH111
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable


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    PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N integrated circuits equivalents list FCY101 FCH151 FCH191 FJH101 FJH111

    FCH121

    Abstract: FCL101 7400N 7490N 7402N 7420N FJH101 FJH111 FJH121 FJH131
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable


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    PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N FCH121 7490N FJH101 FJH111 FJH121 FJH131

    Untitled

    Abstract: No abstract text available
    Text: [sO HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS OPTOELECTRONICS i I -I H11G1 H11G2 PACKAGE DIMENSIONS DESCRIPTION The H11G1 and H 11G 2arethe photodarlington-type optically coupled optoisolators. Both devices have a gallium arsenide infrared em itting diode coupled with a


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    PDF H11G1 H11G2 H11G1 C1706 C1705 C1707 C1708

    integrated circuits equivalents list

    Abstract: FCH111 Mullard Diode FCL101 7472N equivalent 7400N FCH131 7402N 7420N FJH111
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L V E R S IO N S Mullard equivalent Type No. TTL r a n g e DTL r a n g e - RC 206 - RC 210 RC 216 RC •RC ■RC ■RC ■RC ■RC RC RC RC RC ■RC RC 224 225 226 227 231 234 236 246 261 266 286 296 Mullard


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    PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N integrated circuits equivalents list FCH111 Mullard Diode 7472N equivalent FCH131 FJH111

    mikroelektronik ddr

    Abstract: Halbleiterbauelemente DDR VEB mikroelektronik vqb 71 A910D VQB71 "halbleiterwerk frankfurt" diode sy-170 VQB 37 u112d
    Text: Halbleiter-Bauelemente Semiconductors Die vorliegende Übersicht enthält in gedrängter Form die wichtigsten Grenz- und Kenn­ daten der in der DDR gefertigten Halbleiterbauelem ente. Dem Anwender soll durch diese Übersicht die Auswahl der jeweils in Frage kommenden


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    diode SY 192

    Abstract: No abstract text available
    Text: - TC74LVX157F/FN/FS QUAD 2 -CH ANN EL MULTIPLEXER T he T C 74L V X 157 is a h ig h speed CM OS Q U A D 2 —CHANNEL M ULTIPLEXER fabricated w ith silicon gate C2MOS technology. D esigned for use in 3.3 Volt system s, it achieves high speed


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    PDF TC74LVX157F/FN/FS diode SY 192

    Halbleiterbauelemente DDR

    Abstract: sy 170 diode sy-180 diode sy 171 10 diode sy-170 mikroelektronik DDR mikroelektronik Heft 12 VEB mikroelektronik SY 180 Applikation Information
    Text: m o ß ^ t s ie le l- c ia n o r ill- i Information Applikation INFORMATION A PPLIKA TIO N M IK R O E L E K T R O N IK Heft 16: L E IS T U N G S -E L E K T R O N IK II Bauelemente-Sortiment der DDR -Teil 1: Dioden- VEB GLEICHRICHTERWERK STAHNSDORF im VEB Kombinat Mikroelektronik


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    integrated circuits equivalents list

    Abstract: FCH141 FCH191 7400N FCL101 7402N 7420N FJH101 Mullard Diode FJH121
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC 224 •RC 225 ■RC 226 ■RC 227 ■RC 231 ■RC 234 RC 236 RC 246 RC 261 RC 266 ■RC 286 RC 296 M ullard comparable


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    PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N integrated circuits equivalents list FCH141 FCH191 FJH101 Mullard Diode FJH121

    VEB mikroelektronik

    Abstract: Datenblattsammlung SY 625 V40511D mikroelektronik datenblattsammlung Diode KD 514 KD512A mikroelektronik Berlin "halbleiterwerk frankfurt" VEB Kombinat mikroelektronik Erfurt
    Text: \ñ ñ lB rW *m X S á B Í4 ti& * 311' ill c e l e k t r o n i k - b a u e i e m e n t e ? 2/86 . Die vorliegenden Datenblätter beinhalten Listen i Infonmatic-aen ü b e r elektronischer Sie können abgeleitet beinhalten n ur z u r Information» Halbleiterbauelemente


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    FCH211

    Abstract: FCH101 FCL101 FCH 211 dtl logic gates FCH191 7451 ttl fch 131 tl 741 7402N
    Text: INTEGRATED CIRCUITS EQUIVALENTS LIST C O M M E R C IA L VERSIONS M ullard equivalent Type No. TTL range DTL range - RC 206 - RC 210 RC 216 RC •RC ■RC ■RC ■RC ■RC RC RC RC RC ■RC RC 224 225 226 227 231 234 236 246 261 266 286 296 M ullard comparable


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    PDF 7400N FJH131 FCL101 FJH231 7402N FJH221 FJH121 7420N FJH111 7430N FCH211 FCH101 FCH 211 dtl logic gates FCH191 7451 ttl fch 131 tl 741

    Diode SY 345

    Abstract: STR F 6234 VEB mikroelektronik TRANSISTOR KT 837 mikroelektronik RFT STRALSUND RFT KB 100 Mitteilung VEB RFT EY500 aiwa tpr
    Text: SERVICE-MITTEILUNGEN VEB RFT I N D U S T R I E V E R T R I E B RUNDFUNK UND FER N SE H EN ¡RimnM l r a d io - t e / e v is io n | Ausgabe 1988 9-11 Seite 1 - 12 1. Mitteilung aus dem VEB RFT Industrievertrieb RuF Leipzig, Bereich S Raduga 726/730 - Neues Äquivalent für den Hochspannungsgleich­


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