diode sy 180 10
Abstract: 1ss373
Text: 1SS373 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • Low forward voltage: DESCRIPTION PIN VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 SY Top View Marking Code: "SY" Simplified outline SOD-323 and symbol
|
Original
|
PDF
|
1SS373
OD-323
OD-323
diode sy 180 10
1ss373
|
diode sy 180 10
Abstract: 1ss373
Text: 1SS373 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • Low forward voltage: DESCRIPTION PIN VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 SY Top View Marking Code: "SY" Simplified outline SOD-323 and symbol
|
Original
|
PDF
|
1SS373
OD-323
OD-323
diode sy 180 10
1ss373
|
diode sy 180 10
Abstract: 1ss373 diode sy
Text: 1SS373 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • Low forward voltage: DESCRIPTION PIN VF = 0.23V typ. @IF = 5mA 1 Cathode 2 Anode 2 1 SY Top View Marking Code: "SY" Simplified outline SOD-323 and symbol
|
Original
|
PDF
|
1SS373
OD-323
OD-323
diode sy 180 10
1ss373
diode sy
|
diode sy
Abstract: diode sy 160 diode sy 200 1ss373 diodes SY 200
Text: 1SS373 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High speed switching 1 Cathode 2 Anode 2 1 SY Top View Marking Code: "SY" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC
|
Original
|
PDF
|
1SS373
OD-323
OD-323
diode sy
diode sy 160
diode sy 200
1ss373
diodes SY 200
|
diode sy 200
Abstract: 1ss373 diode sy 180 10
Text: 1SS373 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Features • Low forward voltage PINNING DESCRIPTION PIN Applications • High speed switching 1 Cathode 2 Anode 2 1 SY Top View Marking Code: "SY" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC
|
Original
|
PDF
|
1SS373
OD-323
OD-323
diode sy 200
1ss373
diode sy 180 10
|
VUB145-16NOXT
Abstract: No abstract text available
Text: VUB 145-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 14 5A VF = 2.76 V IF SM = 1100 A IF SM = 200 A IG BT V C E S= 1200 V I C 8 0 VC
|
Original
|
PDF
|
145-16NO1
E72873
20101007a
VUB145-16NOXT
|
Untitled
Abstract: No abstract text available
Text: VUB 116-16NO1 Three Phase Rectiier Bridge w ith IG B T and F ast R ecovery D iode f or B rak ing Sy stem Rectiier Diode VR Fast Recov. Diode = 1600 V VC E =S 1200 V R M IdAV M = 116 A VF = 2.76 V IF SM = 700 A IF SM = 200 A IGBT V C E S= 1200 V I C 8 0 VC
|
Original
|
PDF
|
116-16NO1
116-16N
E72873
20101007a
|
SY 625
Abstract: No abstract text available
Text: HSS82-Silicon Epitaxial Planar Diode for High Voltage Switching Features Outline • High reverse voltage. VR=200V • Suitable for 5mm pitch high speed automatical insertion. • S m all g la ss p ack a g e (M H D ) en a b les ea sy
|
OCR Scan
|
PDF
|
HSS82------------------------Silicon
HSS82_
175istics
HSS82
SY 625
|
4N29-4N33
Abstract: No abstract text available
Text: 57E J> ÛUALITY TECHNOLOGIES CORP Optoisolator Specifications _ 7MbbfiSl Ü00mi|4 •ÛTY 4N29, 4N29A, 4N30, 4N31, 4N32, 4N32A, 4N33 Optoisolator G aA s Infrared Emitting Diode and N PN Silicon Photo-Darlington Amplifier SY M BO L M IN E
|
OCR Scan
|
PDF
|
4N29A,
4N32A,
E51868
0110b
74bbflSl
4N29-4N33
4N29-4N33
|
MARKING SY SOT23
Abstract: SY SOT23 MARKING SOT23-3 LF MARKING P8A
Text: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 -SEPTEMBER 1995 O DIODE PIN CONNECTION r-W rW •► 1 3 SOT23 PART MARKING DETAIL - P8A ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L VALUE UNIT rrm 100 V *F A V 250 mA ^S M 3.0 A 330
|
OCR Scan
|
PDF
|
FLLD261
-200m
FLLD263
MARKING SY SOT23
SY SOT23
MARKING SOT23-3 LF
MARKING P8A
|
diode sy 715
Abstract: No abstract text available
Text: SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR ZDX3F ZDX4F ISSUE 2 -MARCH 94 ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SY M B O L Repetitive Peak R everse Voltage V RRM Average Rectified Forw ard Current Non-Repetitive Peak Forw ard Current t=1ns ZD X 3F
|
OCR Scan
|
PDF
|
cH7Q57Ã
001G35S
diode sy 715
|
Untitled
Abstract: No abstract text available
Text: HSS83-Silicon Epitaxial Planar Diode for High Voltage Switching Features Outline • High reverse voltage. VR=250V • Suitable for 5mm pitch high speed automatical insertion. • S m all g la ss p ack a g e (M H D ) en a b les e a sy
|
OCR Scan
|
PDF
|
HSS83------------------------Silicon
HSS83
HSS83
|
Untitled
Abstract: No abstract text available
Text: ZC2800E ZC2811E ZC5800E SOT23 SCHOTTKY BARRIER DIODES I SSUE 2 -M A R CH 1995_ 2 _ DIODE PIN CONNECTION 1 t PARTMARKING DETAIL ZC2800E - E6 ZC2811E-E8 ZC5800E-E9 3 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Power Dissipation at Tamb- 25°C
|
OCR Scan
|
PDF
|
ZC2800E
ZC2811E
ZC5800E
ZC2800E
ZC2811E-E8
ZC5800E-E9
|
"DIODE" SY 171
Abstract: THZ3R3A05 thz010a10 THZ6R0A10 THZ013A05
Text: ALLEGRO M IC RO SY ST E MS 8514019 S PR A G U E . INC ^3 D • GS0433Ô SEMICONDS/ IC S 00D3bED 93D R ■ 03620 _ ALGR T '- 't /"* DIODE CHIPS ‘THZ’ Series ‘A ’ Zener Diodes ELECTRICAL CHARACTERISTICS at Tfl = 25°C @ZT mA Max. (m-A)
|
OCR Scan
|
PDF
|
GS0433Ô
00D3bED
THZ025A05
THZ025A10
THZ027A05
THZ027A10
THZ028A05
THZ028A10
THZ030A05
THZ030A10
"DIODE" SY 171
THZ3R3A05
thz010a10
THZ6R0A10
THZ013A05
|
|
|
SY SOT23
Abstract: No abstract text available
Text: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 4 - JANUARY 1998 PIN CONFIGURATION 1 PARTM ARKING DETAIL Î F M M V 109 - 4A ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L P o w e r D is s ip a tio n at T amb=25°C VALUE UNIT 330 mW -55 to +150 °C
|
OCR Scan
|
PDF
|
V/25V,
SY SOT23
|
Untitled
Abstract: No abstract text available
Text: SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE ISSUE 3 - JANUARY 1998 PIN CONFIGURATION 1 PARTM ARKING DETAIL Î F M M V 3 1 0 2 -4 C ABSOLUTE M AXIM UM RATINGS. PARAMETER SY M BO L P o w e r D is s ip a tio n at T amb=25°C VALUE UNIT 330 mW -55 to +150
|
OCR Scan
|
PDF
|
V/25V,
|
B159 diode
Abstract: 6DI50B-050 le50a 6di50b B-159 M606
Text: 6DI50B-050 50A ✓ < 7 ! t ± ' N r 7 — t ' ^ L — -/u : Outline Drawings - POWER TRANSISTOR MODULE •¡tfjft : F e a tu re s 1 7 ÿ —sft-f y 'sy »hFE*''iëj^ =t — KF*3 j Including Free W heeling Diode High D C Current Gain Insulated Type Iffliê : A p p lic a tio n s
|
OCR Scan
|
PDF
|
6DI50B-050
E82988
B-160
B159 diode
le50a
6di50b
B-159
M606
|
1BH62
Abstract: DIODE 1BH62 IS1835 1JH62 1DH62 1GH62 1JH62 3-3b1a DIODE 39c 1S1834 1S1835
Text: 9097250 TOSHIBA DISCRETE/OPTO 39C FAST RECOVERY DIODE 02240 »^^0^7250 0002540 S Unit in I S 1835 600V Bin 1A MAXIMUM RATING C H A R A C T E R IST IC SY M BO L 400 1S1834 R epetitiv e P eak R e v e rse V oltage 1S1835 V Vrrm 600 1S1834 R e v e r s e V oltage
|
OCR Scan
|
PDF
|
D00aa4D
1S1835
1S1834
100ns
1BH62
DIODE 1BH62
IS1835
1JH62
1DH62
1GH62
1JH62 3-3b1a
DIODE 39c
1S1835
|
toshiba 6jg11
Abstract: 12GH11 12JG11 12JH11 6JG11 12GG11 IF-10A 6DG11 6GG11 12BG11
Text: 9097250 1ñ dË TOSHIBA 39C DI S C R E T E /O P T O J t D^SSD 0 0 0 5 2 4 3 D T - O J - / / FAST RECOVERY DIODE | ~ - 02243 600V 6A 6 JG 1 1 M A X IM U M RATINGS C H A R A C T E R IS T IC SY M BO L 100 200 6DG11 Repetitive Peak R everse Voltage
|
OCR Scan
|
PDF
|
6JG11
6BG11
6DG11
6FG11
6GG11
13Max.
3-11B1A
12BG11-12JG11
12BH11
toshiba 6jg11
12GH11
12JG11
12JH11
6JG11
12GG11
IF-10A
6DG11
6GG11
12BG11
|
Untitled
Abstract: No abstract text available
Text: s q . i .p . Square In-line Package Input/Output In-line Package Bridge Diode • O U TL IN E DIM ENSIONS S3WBD 600V 2.3A U nit • mm W eight • 5.5g ■ RATINGS Absolute Maximum Ratings i i a I t em Sy mb o l V M axim um R e v e rs e V o lta g e m tiW M
|
OCR Scan
|
PDF
|
|
diode sy 170
Abstract: No abstract text available
Text: SEM ICONDUCTOR KDR728 TECHNI CAL DATA S C H O T T K Y BARRI ER T YP E DIODE LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES • L ow Forw ard V oltage : V F 2 =0.42(T yp.) • Sm all Package : USC. w MAXIMUM RATING (Ta=25°C) C H A R A C T E R IS T IC SY M B O L
|
OCR Scan
|
PDF
|
KDR728
diode sy 170
|
sy 320 diode
Abstract: No abstract text available
Text: P h ilip s Se m ico n d u cto rs P re lim in sry specification Schottky barrier diodes FEA T U R ES BAT54W series Q U IC K R E F E R EN C E DATA • Ultra-fast switching speed • Low forward voltage SY M B O L PA RAM ET ER CO N DITIO N S UNIT MAX. Per diode
|
OCR Scan
|
PDF
|
BAT54W
SA891
M80O46
sy 320 diode
|
15FWJ11
Abstract: 15GWJ11 30GWJ11 30FWJ11 AC23A
Text: 9097250 TOSHIBA 39C CDI S C R E T E / O P T O 02257 7^ 03-^ 7 SCHOTTKY BARRIER DIODE Unit in nm 15GWJ11 40V 15A MAXIMUM RATINGS C H A R A C T E R IS T IC SY M B O L Repetitive Peak 15FWJ11 R everse Voltage 15GWJ11 RATING UNIT 30 V rrm 40 Average F o rw a rd C u rrent
|
OCR Scan
|
PDF
|
15GWJ11
15FWJ11
100Hz
3-11G1A
15GWJ11
30GWJ11
30FWJ11
AC23A
|
Untitled
Abstract: No abstract text available
Text: W hnt H E W L E T T WilEM PA C K A R D GaAs Schottky Diode Technical Data HS CH-9401 Features • Low Ju n ction C apacitance — typ ically 35 fF • Low S eries R esistan ce — typ ically 6 Q. • T ri-m etal sy stem for im proved relia b ility • High cu t-o ff freq uency
|
OCR Scan
|
PDF
|
CH-9401
HSCH-9401
|
