SSO16
Abstract: laser diode DVD 24x cd rom laser diode laser APC CIRCUIT power sso16 apc driver for laser diode dvd-rw laser diode 780 nm laser diode DVD t0820
Text: D i g i t a l Ve r s a t i l e D i s k DVD Laser Diode Driver ICs Atmel offers a complete family of laser diode drivers for re-writable DVD, CD and other optical media drives such as copying machines, laser printers and fax machines. Atmel's objective is to provide various solutions to meet the designers' different needs.
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T0800
T0806
SSO16
601A-DVD-07/02/0M
laser diode DVD 24x
cd rom laser diode
laser APC CIRCUIT
power sso16
apc driver for laser diode
dvd-rw
laser diode 780 nm
laser diode DVD
t0820
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1.2V solar garden light
Abstract: Solar Garden Light diode F8 23 by-pass solar cell
Text: E L E C T R O N I C The New “By-pass” Diode Friday, 23 November 2007 Sirectifier Global Corp. SGC announced that the new “By-pass” diode which with lower forward voltage drop (VF) for many kinds of DC to DC application especially in the solar cell fields.
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1.2V solar garden light
Abstract: solar dc light system TO-263AC by-pass solar cell Solar Garden Light pv bypass diode
Text: E L E C T R O N I C The Application of the “By-pass” Diode for Solar Cell Monday, 19 November 2007 Sirectifier Global Corp. SGC announced that the new “By-pass” diode which with lower forward voltage drop (VF) for many kinds of DC to DC application especially in the solar cell fields.
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O-263AC
1.2V solar garden light
solar dc light system
TO-263AC
by-pass
solar cell
Solar Garden Light
pv bypass diode
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BAX12
Abstract: No abstract text available
Text: • bb53^31 0D2b3b0 562 « A P X N AMER P H I L I P S / D I S C R E T E b'iE BAX12 T> SILICON PLANAR EPITAXIAL CONTROLLED-AVALANCHE DIODE A planar epitaxial diode in a DO-35 envelope, capable o f absorbing transients repetitively. It is a fast, controlled avalanche diode, intended for switching inductive loads e.g. in semi-electronic telephone
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BAX12
DO-35
bbS3T31
BAX12
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CV2318
Abstract: ca 3161 e IC A2272 HIGH VOLTAGE DIODE kv marconi company marconi
Text: A HIGH VO LTA G E A2272 DIODE NOVEMBER, 1955 A h igh v o lta g e v acu u m diode w ith a n in d ire ctly h e a te d c ath o d e su itab le for use as a rectifier or a n inverse diode a t h igh a m b ie n t tem p e ra tu res. A2272 is th e com m ercial e q u iv a len t of CV2318.
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A2272
A2272
CV2318.
CV2318
ca 3161 e IC
HIGH VOLTAGE DIODE kv
marconi company
marconi
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BAT 49
Abstract: MBAT49
Text: /IT ^7# SGS-THOMSON [»E »[L[i T ro «S _ TMMBAT 49 SMALL SIGNAL SCHOTTKY DIODE D E S C R IP T IO N General purpose metal to silicon diode featuring ve ry low turn-on voltage and fast switching. This device has integrated protection against exces
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74LS115
Abstract: 74LS273 74LS189 equivalent 74LS00 QUAD 2-INPUT NAND GATE 74LS265 fan-in and fan out of 7486 74LS93A 74LS181 74LS247 replacement MR 31 relay
Text: F A IR C H IL D LOW POWER S C H O T T K Y D A TA BOOK ERRATA SHEET 1977 Device Page Item Schematic 2-5 Figure 2-6. Blocking diode in upper right is reversed. Also, diode con necting first darlington emitter to output should have series resistor. LS33 5-25
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5082-0049
Abstract: 5082-0030
Text: H E W L E T T - P A C K A R D CMPNTS DE J~44M75flM D O O E T D T 3 | Tñ 4447584 HEWLETT-PACKARD» 58C 0 2 9 0 9 CMPNTS D T' o ? '/^ Whnl H E W L E T T m!/im P A C K A R D PIN DIODE CHIPS FOR HYBRID MIC SWITCHES/ATTENUATORS 5082-0001 5082-0012 5082-0025 5082-0030
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44M75flM
lon50
--20V
5082-0049
5082-0030
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TRIODE
Abstract: Scans-0017323
Text: I8 F Y 6 TW IN DIODE—HIGH-MU TRIODE _ 7 - P I N M IN IA T U R E T Y P E _ SENERAL DATA E le c t r ic a l: Heater, fo r Un¡potential Cathode: Voi tage AC or ( X . . . . Current . D irect Interelectrode Capacitances:
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18FY6
92CM-I0775
TRIODE
Scans-0017323
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zener diode marking ES code
Abstract: No abstract text available
Text: Centrar 1 C MSZ5221B THRU CMSZ5261B # Sem iconductor Corp. 250 mW ZENER DIODE 5% TOLERANCE m mini DESCRIPTION: The CENTRAL S E M IC O N D U C T O R C M SZ5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial, commercial, entertainment and
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MSZ5221B
CMSZ5261B
SZ5221B
OT-323
CMSZ5245B
CMSZ5246B
CMSZ5247B
CMSZ5248B
CMSZ52496
CMSZ5250B
zener diode marking ES code
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diode 6t6
Abstract: SMD TRANSISTOR 12a P5 smd transistor STTA1206M diode smd 600V soft recovery smd diode 600v 1a smd transistor xf SMD a7 Transistor smd transistor A7 s 22
Text: f Z ^ 7 7 # S G S -T H O M S O N STTA _ 1206M ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If av 12A V rrm 600V trr (typ) 28ns V f (max) 1.5V FEATURES AND BENEFITS • SPECIFIC TO “FREEWHEEL MODE” OPERA TIONS: Freewheel or Booster Diode.
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STTA1206M
00b0G7fl
diode 6t6
SMD TRANSISTOR 12a
P5 smd transistor
STTA1206M
diode smd 600V soft recovery
smd diode 600v 1a
smd transistor xf
SMD a7 Transistor
smd transistor A7 s 22
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zener diode 1N PH 48
Abstract: zener diode 1N PH 53 1N3020-1 Diodo zener W diodo zener C 18 ph 1N1743 diode ziner 1N4202 ST 41 Diodo Zener 1N32B
Text: ZENER DIODE/RECTIFIER CROSS REFERENCE CHART C ontaining all JEDEC re gistere d Zener diodes. This popular re fere nce cha rt contains high lig h t inform ation on all JEDEC registered Ze ner diode and re c tifie r types as w ell as M icrosem i types. The follow in g Codes are used:
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BZX83
BZX97
BZX98
BZY97
BZD10
BZW22
BZV40
500mW
DO-35
zener diode 1N PH 48
zener diode 1N PH 53
1N3020-1
Diodo zener W
diodo zener C 18 ph
1N1743
diode ziner
1N4202
ST 41 Diodo Zener
1N32B
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Untitled
Abstract: No abstract text available
Text: Data Sheet June 1999 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations LG1625AXF Laser Driver Features Description • High data-rate laser diode/LED driver The LG1625AXF is a gallium-arsenide GaAs laser diode driver to be used with direct modulated laser
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LG1625AXF
DS99-187HSPL
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6-BT
Abstract: No abstract text available
Text: T5± SYLVANIA TYPE 6EB5 DUO DIODE w MECHANICAL DATA B u lb . T -5 H , M in ia tu re B u tto n 7 -P in
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Untitled
Abstract: No abstract text available
Text: T E N T A T IV E DATA 6EB5 TUMOSOL DOUBLE DIODE M IN I A T U R E T Y P E 4 MAX C O A T E D U N IP O T E N T IA L C A T H O D E ! T -55 HEATER 1 8 MAX 1 j 6.3 ± 10 % V O L T S 0.30 A M P . AC OR DC MA X A N Y M O U N T IN G P O S IT IO N BOTTOM VIEW S M A L L B U T T O N M IN IA T U R E
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3al5
Abstract: No abstract text available
Text: TENTATIVE 3AL5 DATA TUN S-SO L DOUBLE DIODE MINI ATURE y TYPE COATE D UN I P O T E N T I A L CATHODE 4 MAX' T X X HEATE R “T 3 - 1 5 VOLTS VIHA T-5^ J 0 . 6 AMP. AC OR DC ' i MAX ANY MOUNTI NG P O S I T I O N .L G L A S S BULB BOTTOM VIEW MINIATURE BUTTON
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IDENTIC-15
3al5
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TIS43
Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.
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2S301
BS9300-C-598
2S305
BS9300-C-366
2S307
2S322
CV7396
BS9300-C-396
CV7647
BS9300-C-647
TIS43
equivalent of transistor bc214
BF257 Texas
equivalent of transistor bc212 bc 214
2N696 TEXAS INSTRUMENTS
Q2T2222
TIS70
BFR40
kd 2060 transistor
BF195 equivalent
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ic 2028
Abstract: 2028b IC 2803
Text: ¡^Ordering num ber: EN 2803 2SD2028 No.2803 NPN Epitaxial P lana r Silicon T ransistor Low-Frequency Power Amp A pplications F eatures • With Zener diode 11 ± 3V between collector and base •Large cu rren t capacity ■Low collector to em itter satu ra tio n voltage
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2SD2028
2SD2028-applied
2SD2028
44-fiJS
D148MO
ic 2028
2028b
IC 2803
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transistor 1FX
Abstract: F54C
Text: 3. Thermal Stability and Radiation Design of Transistor Circuit One of th e ch aracteristics of sem iconductor products such as tra n sisto r and diode is th a t th e electrical ch aracteristic is very susceptible to te m p eratu re . T herefore, in circuit design, it
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2SC3626
transistor 1FX
F54C
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hsms8001
Abstract: No abstract text available
Text: mLfim P A C K A R D W hn% H E W L E T T Schottky Diode Chips for X/Ku-Band Hybrid Integrated Circuits HSMS-8001 HSMS-8002 HSMS-8011 HSMS-8012 Technical Data Features • Platinum Tri-metal System — High Temperature Stability • Offset Gold Bonding Pad — Thermo compression/
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HSMS-8001
HSMS-8002
HSMS-8011
HSMS-8012
HSMS8011
HSMS8001
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marking JC diode
Abstract: BXY18AB6 marking code diode 04 to-18 Q62702-X137 kl diode BXY18A2 BXY18AB2 BXY18AB5 Q62702-X133 SIEMENS marking
Text: SIEM ENS Silicon Charge Storage Varactors BXY18. • Multiplier diode for high frequencies up to 18 GHz Type Marking Ordering Code Pin Configuration Package1 BXY18A2 - Q62702-X140 Cathode: black dot, T BXY18AB2 Q62702-X133 BXY18AB5 Q62702-X136 BXY18AB6
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BXY18.
BXY18A2
Q62702-X140
BXY18AB2
Q62702-X133
EHA07001
BXY18AB5
Q62702-X136
BXY18AB6
Q62702-X137
marking JC diode
BXY18AB6
marking code diode 04 to-18
Q62702-X137
kl diode
BXY18AB2
BXY18AB5
SIEMENS marking
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ub22 diode
Abstract: UB-44
Text: U I/2 U D O lA fP D DIODE DUPLEXERS b a l a n c e d SERIES UB G E N E R A L IN F O R M A T IO N : Th e Series U B Diode Duplexers enhance the power han dling capability of series U D duplexers, by em ploying a balanced configuration. Th is configuration doubles the power capability
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MIL-E-5400
ub22 diode
UB-44
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Untitled
Abstract: No abstract text available
Text: y a .y h dr/s: lj K Surface Mounting^Deviœ Schottky Barrier Diode Twin Diode •W fêvhÆ E ] DF30PC3M OUTLINE DIMENSIONS Case : STO-220 30V 30A •S M D • ¡B ffiV F = 0 .4 V m ffl i î • A '> x U - i ï S K ± • D C tÜ ^ O R ffl • D C / D C n v A — 5>
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DF30PC3M
STO-220
00D32A5
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12BU6
Abstract: newark electronic tube Scans-0017272
Text: C6BU6 I2BU 6 TUNG-SOL - N DOUBLE-DIODE TRIODE M INIATURE TYPE 3* - 4 MAX. U N IPO TEN TIA L CATHODE t I-S i 2— c 8 MAX HEATER 1 2 .6 VOLTS 150 MA. AC OR DC ¿ 8 MAX ANY MOUNTING P O S IT IO N BOTTOM VIEW GLASS BULB M I N I A T U R E B UT T ON
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12BU6
I19BO
I10BO
newark
electronic tube
Scans-0017272
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