IC951
Abstract: stm diode C818 smd diode mx c321 ic501 smd diode ge r803 pin diagram of optical detector IC501 R435 RF receiver MODULE CIRCUIT DIAGRAM LDR 03 PHOTO RESISTOR 2222A SMD transistor C458
Text: APPLICATION NOTE Fiber optic transceiver demo board STM16 OM5801 AN96051 Philips Semiconductors Philips Semiconductors OM5801 Application Note AN96051 2 Philips Semiconductors Fiber optic transceiver demo board STM16 Application Note AN96051 APPLICATION NOTE
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STM16
OM5801
AN96051
IC951
stm diode C818
smd diode mx c321
ic501
smd diode ge r803
pin diagram of optical detector IC501
R435 RF receiver MODULE CIRCUIT DIAGRAM
LDR 03 PHOTO RESISTOR
2222A SMD
transistor C458
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ps4 schematic
Abstract: 820 B10 45g D5036 c945 TRANSISTOR equivalent D74 DIODE zener diode c531 c337 transistor nec equivalent smd transistor A7p vt1631 vt8235
Text: 5 3 2 1 First International Computer,Inc Protable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : PS4 2. PCI & IRQ & DMA Description : Version : 0.6 3. Block Diagram : D C 4. Nat name Description :
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NO266
100MHz
1-201209-601A20T
80mil
C40R1E106K-TSM
680pF
SMT0603
PN800
VT8235CE)
ps4 schematic
820 B10 45g
D5036
c945 TRANSISTOR equivalent
D74 DIODE
zener diode c531
c337 transistor nec equivalent
smd transistor A7p
vt1631
vt8235
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panasonic encoder MFE
Abstract: ps3 schematic 935 b10 45g 939 b10 45g transistor C732 PN800 c828 npn transistor l46f pin configuration NPN transistor c945 NPN Diode CK 99A
Text: 5 3 2 1 First International Computer,Inc Protable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : PS3 2. PCI & IRQ & DMA Description : Version : 0.4 3. Block Diagram : D C 4. Nat name Description :
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NO266
100MHz
FBM-11-201209-601A20T
80mil
CC40R1E106K-TSM
680pF
SMT0603
PN800
VT8235CE)
panasonic encoder MFE
ps3 schematic
935 b10 45g
939 b10 45g
transistor C732
PN800
c828 npn transistor
l46f
pin configuration NPN transistor c945 NPN
Diode CK 99A
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ps3 schematic
Abstract: VT8235CE DO-214C smd transistor A7p c945 TRANSISTOR equivalent PN800 VT1631 hcl l21 usb power supply circuit diagram ENE CP2211 foxconn
Text: 5 3 2 1 First International Computer,Inc Protable Computer Group HW Department D C 4 Board name : Mother Board Schematic 1. Schematic Page Description : Project : PS3 2. PCI & IRQ & DMA Description : Version : 0.4 3. Block Diagram : D C 4. Nat name Description :
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NO266
TAIWA416
100MHz
FBM-11-201209-601A20T
80mil
680pF
SMT0603
CC40R1E106K-TSM
PN800
ps3 schematic
VT8235CE
DO-214C
smd transistor A7p
c945 TRANSISTOR equivalent
PN800
VT1631
hcl l21 usb power supply circuit diagram
ENE CP2211
foxconn
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diode t95
Abstract: N02R T95 Diode T95N02R
Text: NTD95N02R Power MOSFET 95 A, 24 V, N−Channel DPAK Features • • • • High Power and Current Handling Capability Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Gate Charge to Minimize Switching Losses http://onsemi.com V(BR)DSS
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NTD95N02R
diode t95
N02R
T95 Diode
T95N02R
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n02rg
Abstract: diode t95 T95N02R T 60 n02rg ON n02rg T95N02RG NTD95N02R 369D NTD95N02RG NTD95N02RT4
Text: NTD95N02R Power MOSFET 95 Amps, 24 Volts N−Channel DPAK Features http://onsemi.com High Power and Current Handling Capability Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Gate Charge to Minimize Switching Losses Pb−Free Packages are Available
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NTD95N02R
NTD95N02R/D
n02rg
diode t95
T95N02R
T 60 n02rg
ON n02rg
T95N02RG
NTD95N02R
369D
NTD95N02RG
NTD95N02RT4
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diode t95
Abstract: T95 Diode N02R 369D NTD95N02R NTD95N02RT4
Text: NTD95N02R Power MOSFET 95 A, 24 V, N−Channel DPAK Features • • • • High Power and Current Handling Capability Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Gate Charge to Minimize Switching Losses http://onsemi.com V(BR)DSS
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NTD95N02R
NTD95N02R/D
diode t95
T95 Diode
N02R
369D
NTD95N02R
NTD95N02RT4
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Untitled
Abstract: No abstract text available
Text: NTD95N02R Power MOSFET 95 Amps, 24 Volts N−Channel DPAK Features http://onsemi.com High Power and Current Handling Capability Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Gate Charge to Minimize Switching Losses Pb−Free Packages are Available
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NTD95N02R
NTD95N02R/D
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n02rg
Abstract: ON n02rg n02r diode t95 NTD95N02RT4G 369D NTD95N02R NTD95N02RG NTD95N02RT4 T 60 n02rg
Text: NTD95N02R Power MOSFET 95 Amps, 24 Volts N−Channel DPAK Features http://onsemi.com High Power and Current Handling Capability Fast Switching Performance Low RDS on to Minimize Conduction Loss Low Gate Charge to Minimize Switching Losses Pb−Free Packages are Available
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NTD95N02R
NTD95N02R/D
n02rg
ON n02rg
n02r
diode t95
NTD95N02RT4G
369D
NTD95N02R
NTD95N02RG
NTD95N02RT4
T 60 n02rg
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82801HBM
Abstract: 82801H ICH8M T8300 82801HBM Datasheet T8100 Intel BGA PJ26G 82801HB intel Penryn
Text: Intel Core 2 Duo Processor and Intel® Core™2 Extreme Processor on 45-nm Process for Platforms Based on Mobile Intel® 965 Express Chipset Family Datasheet January 2008 Document Number: 318914-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR
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45-nm
82801HBM
82801H
ICH8M
T8300
82801HBM Datasheet
T8100
Intel BGA
PJ26G
82801HB
intel Penryn
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1089QB
Abstract: bourns tisp
Text: CO M PL IA NT TISP61089QB *R oH S PROGRAMMABLE OVERVOLTAGE PROTECTOR QUAD FORWARD-CONDUCTING P-GATE THYRISTOR TISP61089QB SLIC Overvoltage Protector Quad Voltage-Programmable Protector - Wide -20 V to -155 V Programming Range - Low 5 mA max. Gate Triggering Current
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TISP61089QB
YD/T-950
p951-781-5500
1089QB
bourns tisp
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diode k2
Abstract: TISP61089Q 61089Q D008 GR-1089-CORE TISP61089QDR-S JESD51-7
Text: CO M PL IA NT TISP61089Q *R oH S PROGRAMMABLE OVERVOLTAGE PROTECTOR QUAD FORWARD-CONDUCTING P-GATE THYRISTOR TISP61089Q SLIC Overvoltage Protector Quad Voltage-Programmable Protector - Wide -20 V to -155 V Programming Range - Low 5 mA max. Gate Triggering Current
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TISP61089Q
TISP61089Q
YD/T-950
forw1-7685510
diode k2
61089Q
D008
GR-1089-CORE
TISP61089QDR-S
JESD51-7
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1089QB
Abstract: 5k2a t950
Text: CO M PL IA NT TISP61089QB *R oH S PROGRAMMABLE OVERVOLTAGE PROTECTOR QUAD FORWARD-CONDUCTING P-GATE THYRISTOR TISP61089QB SLIC Overvoltage Protector Quad Voltage-Programmable Protector - Wide -20 V to -155 V Programming Range - Low 5 mA max. Gate Triggering Current
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TISP61089QB
YD/T-950
p5700
1089QB
5k2a
t950
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1089QB
Abstract: TISP61089QB TISP61089Q TISP61089QBDR-S
Text: CO M PL IA NT TISP61089QB *R oH S PROGRAMMABLE OVERVOLTAGE PROTECTOR QUAD FORWARD-CONDUCTING P-GATE THYRISTOR TISP61089QB SLIC Overvoltage Protector Quad Voltage-Programmable Protector - Wide -20 V to -155 V Programming Range - Low 5 mA max. Gate Triggering Current
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TISP61089QB
YD/T-950
p951-781-5500
1089QB
TISP61089Q
TISP61089QBDR-S
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f650
Abstract: UPA54H DIODE GOC 63 411K PA54H diode 3L DIODE T420 LT 745 S t802 t514
Text: NEC j m + T / v r x K 7 K Diode A rra y A u X l f * * v T ; u ^ v U K 7 P A 5 4 H K K & Ä X - T ^ V ^ J S Silicon Epitaxial Diode Array High Speed Switching / ¿ P A 54H f ± , v S IP fc, # '/ — K Ä S Ä iS X ^ IJ y y ? *• - K 7 W (6 * ^ -) « • » H / P A C K A G E D IM EN SIO N S
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PA54H
PA54HiiN
19-5MAX.
-1611tÂ
-5611tÂ
Sifi-27
f650
UPA54H
DIODE GOC 63
411K
PA54H
diode 3L
DIODE T420
LT 745 S
t802
t514
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T1EB
Abstract: 125CV 2DI75Z-100 30S3 T930 2di75z100 OA9 diode
Text: 2DI75Z-100 75a ' U ± y < r7 - ^ 3 . - ) V : Outline Drawings POW ER TRAN SISTO R MODULE F e a tu re s • ffiifiS High Voltage • 7 V— V — K rtj • A S O A '& i' • Including Free Wheeling Diode Excellent Safe Operating Area Insulated Type : Applications
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2DI75Z-100
095t/R89
T1EB
125CV
30S3
T930
2di75z100
OA9 diode
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Untitled
Abstract: No abstract text available
Text: K /D io d e s 1SS244 V 1J =1> I tf $ * y 7 ; U7°U - d"JKfi I E * < 7 ^ ^- ?'-f - K Silicon Epitaxial Planar High-Voltage Switching Mini-Diode • ^W ^TtSEI/'Dim ensions Unit : mm • # * 1) ra I f t / i "T5 & o 2) 3) S/Jv (DO-34) T * So - tt- ^ I - A 'A
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1SS244
DO-34)
26mmi
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MCC72-12I01
Abstract: v06v 06io1 diode c72
Text: 4bE D • 4bôb22b 000116Ö 3 H I X Y I X Y S CORP BIXYS "T “25-Z3 Version 1 400 600 800 1200 1400 1600 MCC72-06ÌO1 MCC72-08ÎO1 MCC72-12Ì01 MCC72-14Ì01 MCC72-16Ì01 Test conditions ImMâi Ifmhs Tvj=T vjm Tc=85°C; 180°sin Itsmi Ifsm (di/dtJc Version 8
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MCC72
MCD72
D72-04io8
D72-06io8
D72-08io8
MCD72-12iofi
D72-14io8
D72-16io8
MCC72-06
MCC72-08
MCC72-12I01
v06v
06io1
diode c72
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characteristics of zener diode
Abstract: 1DI300ZP-120 zener diode b355 M114 1DI300Zp120 TRANSISTOR BO 352
Text: 1 D 3 I Z P - 1 2 3 A « ± y<r7 - h : Outline Drawings POWER TRANSISTOR MODULE •Features • hFE^^V-' High DC Current Gain • KF*3/K •smmmuimm : Applications • General Purpose Inverter >'<— 9 • Uninterruptible Power Supply • N Servo & Spindle Drive for NC Machine Tools
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1DI300ZP-120
26-35kg
E82988
095t/R89
characteristics of zener diode
zener diode b355
M114
1DI300Zp120
TRANSISTOR BO 352
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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1DI300ZP-120
Abstract: M114 zener diode b355
Text: 1 D I 3 0 0 Z P - 1 2 0 3 0 0 A / < 7 - «± : Outline Drawings h ft POWER TRANSISTOR MODULE I- 21 -|-Ì3 • Features H igh DC C u rre n t Gain ■ ffljis : A p p lic a tio n s • yy<—$ General Purpose Inverter • U n in te rru p tib le P ow er S upply
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1DI300ZP-120
26-35kg
E82988
095t/RB9
M114
zener diode b355
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L9959
Abstract: No abstract text available
Text: 6DI100M -050 iooa ‘ Outline Drawings POWER TRANSISTOR MODULE 17 6 14 14 6 17 1 —ti—¡i—ri—n r : Features • H igh DC C urrent Gain H ig h speed s w itc h in g • 7 'J —A A • KftiWWt Kl*9fi& In c lu d in g Free W h e e lin g D io d e Insu la te d Type
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6DI100M
E82988
L995-9
t95t/R89
Shl50
L9959
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6mb120f-060
Abstract: MPC80 6MBI20F-060 MLE20 6mb120 M604 T151 T810 T930 20A igbt
Text: 6MBI20F-060 20A IGBT ^ S ± ^ < 7 — mm-tm : Outline Drawings z l- ;u IGBT MODULE • t t f t : Features • Low Saturation Voltags • « G E E t t ( M O S * '- M I S ) • IJ Voltage Drive Variety of Pow er Capacity Series * Applications >"< — £ >AC, D C t f — # ? > ' ?
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6MBI20F-060
I95t/R89
Shl50
6mb120f-060
MPC80
6MBI20F-060
MLE20
6mb120
M604
T151
T810
T930
20A igbt
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6MBI20F-060
Abstract: No abstract text available
Text: 6MBI20F-060 20A IGBT =£'>^-)\y ï ± ' < 7 — . JU IJ W N -S S : Outline Drawings IGBT MODULE Features • fl£ fS in /± L o w S a tu ra tio n V o lta g e • V E B tt (M O S 'r - H # & ) • M B V a r i e t y V o lta g e D rive o f P ow er C a p a city Series
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6MBI20F-060
t95t/RS9)
6MBI20F-060
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