toshiba emmc 4.4
Abstract: toshiba 8GB Nand flash emmc toshiba emmc toshiba 16GB Nand flash emmc TCM9000MD TCM9200MD TOSHIBA eMMC CATALOG TC35893XBG RGB to MIPI DSI LCD toshiba 8GB Nand flash bga
Text: 2008-9 SYSTEM CATALOG Mobile Solutions s e m i c o n d u c t o r h t t p : / / w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Semiconductor Devices for Mobile Applications Mobile communications via cellular phones and PDAs are changing the way we live.
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SCE0008G
E-28831
SCE0008H
toshiba emmc 4.4
toshiba 8GB Nand flash emmc
toshiba emmc
toshiba 16GB Nand flash emmc
TCM9000MD
TCM9200MD
TOSHIBA eMMC CATALOG
TC35893XBG
RGB to MIPI DSI LCD
toshiba 8GB Nand flash bga
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APT0502
Abstract: No abstract text available
Text: APT58M50JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 500V RDSon = 65mΩ Max @ Tj = 25°C ID = 58A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch
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APT58M50JCU2
OT-227)
APT0502
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APT0502
Abstract: 20A 100 V ISOTOP
Text: APT58M50JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 500V RDSon = 65mΩ Max @ Tj = 25°C ID = 58A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode - Zero reverse recovery
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Original
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APT58M50JCU3
OT-227)
APT0502
20A 100 V ISOTOP
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Untitled
Abstract: No abstract text available
Text: APT58M50JCU2 ISOTOP Boost chopper MOSFET + SiC chopper diode Power module VDSS = 500V RDSon = 65mΩ Max @ Tj = 25°C ID = 58A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction • Brake switch
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Original
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APT58M50JCU2
OT-227)
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PDF
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Untitled
Abstract: No abstract text available
Text: APT58M50JCU3 ISOTOP Buck chopper MOSFET + SiC chopper diode Power module VDSS = 500V RDSon = 65mΩ Max @ Tj = 25°C ID = 58A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies D Features • G S • SiC Schottky Diode - Zero reverse recovery
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APT58M50JCU3
OT-227)
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PDF
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ps 4512 diode
Abstract: SS44A P61089 PS-4512 diode
Text: T1SP61089 DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS NOVEMBER 1995 - R EVEED JAN U A W 199« PROGRAMMABLE SLIC OVERVOLTAGE PROTECTION • • Dual Voltage-Programmable Protectors - Wide 0 to -80 V Programming Range - Low 5 mA max. Gate Triggering Current
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T1SP61089
TISP61089
TISP61089.
ps 4512 diode
SS44A
P61089
PS-4512 diode
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international rectifier NE 22
Abstract: No abstract text available
Text: PD - 9.1503B International IGR Rectifier IRFP150N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175 °C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100V R ü S o n = 0.03612
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1503B
IRFP150N
O-247
international rectifier NE 22
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PDF
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TRIAC 97A6
Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1
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OD-80
OD-323
OT-23
OT-89
OT-143
OT-223
OT-323
TRIAC 97A6
S0805BH
13003 TRANSISTOR TO220 equivalent
triacs bt 804 600v
Triac bt 808 600C
Diode SOT-23 marking 15d
zener diode 1N PH 48
6Bs smd transistor
Z0409MF equivalent
BT 808 600C
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PDF
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Untitled
Abstract: No abstract text available
Text: International H>iRectifier_ PD - 5.028 CPU165MF Fast IGBT IG BTSIP MODULE Features • • • • Fully isolated printed circuit board mount package Switching-loss rating includes all "tail” losses HEXFRED soft ultrafast diodes Optimized for medium operating frequency 1 to 10kHz
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OCR Scan
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10kHz)
CPU165MF
360Vdc,
C-139
C-140
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PDF
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1N5648
Abstract: LN5644 11 p IN5662A 1N5645 1N5629 1N5629A 1N5630 1N5630A 1/DIODE 1n564 1N5631A
Text: Zener Type No. Zene Voltage tlzT Volts @ mA Max. Zener Impedance @ Izi Ohms Zener Voltage Tolerance 1N5629 1N5629A 1N5630 1N5630A 6.8 6.8 7.5 7.5 10 10 10 10 1N5631 1N5631A 1N5632 1N5632A 1N5633 1N5633A 1N5634 1N5634A 1N5635 1NS635A 1N5636 1N5636A 1N5637 1N5637A
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1N5629
1N5629A
1N5630
1N5630A
500wait:
DO-13
1N5631
1N5631A
1N5632
1N5632A
1N5648
LN5644 11 p
IN5662A
1N5645
1N5630A
1/DIODE 1n564
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NDS9925A
Abstract: No abstract text available
Text: N July 1 9 9 6 N D S9925A Dual N-Channel Enhancement M ode Field Effect Transistor General Description Features T h e se N -C h a n n e l e n h a n c e m e n t m o d e p o w e r field effect tra n sis to rs a re p ro d u c e d u sin g N a tio n a l's p ro p rie ta ry , h ig h cell d e n sity , DMOS te c h n o lo g y .
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OCR Scan
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NDS9925A
NDS9925
0D33347
NDS9925A
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Untitled
Abstract: No abstract text available
Text: RFP42N03, RF1S42N03, RF1S42N03SM 42A, 30V, 0.025 Ohm, N-Channel Power MOSFETs March 1998 Features Description • 42A,30V • UIS Rating Curve The RFP42N03, RF1S42N03 and RF1S42N03SM N-Channel power MOSFETs are manufactured using the MegaFET process. This process which uses feature sizes approaching
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OCR Scan
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RFP42N03,
RF1S42N03,
RF1S42N03SM
RF1S42N03
RF1S42N03SM
TA49235.
0-025i2
O-263AB
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lg66a
Abstract: e78996 india E78996 rectifier module IRFK6H450 hex-pak IRFK6J450
Text: Bulletin E27113 International S Rectifier IRFK6H450JRFK6J450 Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.
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E27113
IRFK6H450
IRFK6J450
E78996.
O-240
CH-8032
IL60067.
NJ07650.
FL32743.
CA90245.
lg66a
e78996 india
E78996 rectifier module
hex-pak
IRFK6J450
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PDF
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431AJ
Abstract: 8 pin ic 3844 for 5 volts 45BJ 8 pin IC UC3842 smps design Siemens pwm ic 3842 pin diagram of ic 3843 circuit diagram smps power supply using IC 3842 a IC38C44-1 IC38C45-1
Text: MICI 8C42/M1C18HC42 Family BiCMOS Current Mode Switching Regulator Preliminary Information General Description Features The MIC18C42 family of devices are fixed frequency, high performance current mode PWM controllers. Although fully pin compatible with the bipolar 3842 family of controllers, the
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8C42/M1C18HC42
MIC18C42
100mV
IC18C42/18HC42
MIC38C43
MIC5022
2200pF
100kHz
431AJ
8 pin ic 3844 for 5 volts
45BJ
8 pin IC
UC3842 smps design
Siemens pwm ic 3842
pin diagram of ic 3843
circuit diagram smps power supply using IC 3842 a
IC38C44-1
IC38C45-1
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arc welding
Abstract: DIODE BUZ LE17 buz46
Text: 3 7E SEMELAB LTD 0133107 D 0000257 b • SflLB ' S O LS ' S E M E L A B ^ 6 | BUZ 46 M O S POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm APPLICATIONS • SMPS • ARC WELDING • D.C. MOTOR CONTROL PIN 1-G a te PIN 2 -S o u rc e C A SE -D rain
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T03Thin
Tj-150
T-39-11
arc welding
DIODE BUZ
LE17
buz46
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Untitled
Abstract: No abstract text available
Text: u v m L T C 1 5 3 8 -A U X / L T C 1539 . TECHNOLOGY D ual High Efficiency, Low Noise, Synchronous Step-Down S w itching R eg ulators F€ATUft€S D C S C R IP T IO n • M aintains Constant Frequency at Lo w Output Currents ■ Dual N-Channel M O S F E T Synchronous Drive
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APT5012LNR
Abstract: max8700 APT5012LN APT5012L 1/Detector/"Detector IC"/"CD"/APT5012LNR
Text: ADVANCED RO W ER Te c h n o l o g y O D O APT5012LN R s PO W ER M O S IV® 500V 42.0A 0.12^ A V A LA N C H E RATED N -C H A N N E L ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M A X IM U M R A T I N G S A ll Ratings: T c = 2 5 CC un less otherw ise sp ecified .
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OCR Scan
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APT5012LN
APT5012LNR
max8700
APT5012L
1/Detector/"Detector IC"/"CD"/APT5012LNR
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PDF
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triacs bt 804 600v
Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa tion for maintaining an unusually high level of quality, perfor
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OCR Scan
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Comp27-1296
triacs bt 804 600v
UR720
1N4465
AO110
diode 1N539
2N3750
Unitrode discrete databook
2N6138
CM104
unitrode 679 BRIDGE rectifier
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PDF
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f42n03l
Abstract: 2n03l 42N03L F42N03 RFP42N03L T0263AB 32 N03L RF1S42N03L RF1S42N03LSM F1S42N
Text: H A F R F R I S semi conductor RFP42N03L, R F 1 S 4 2 N03L, R F1S42N 03LSM 42A, 30V, 0.025Q, N-Chan nel Logic Level Power M O S F E T s March 1997 F e a tu re s D e s c rip tio n • 4 2 A ,3 0V The RFP42N03L, RF1S42N03L, and RF1S42N03LSM are N-Channel power MOSFETs manufactured using the
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OCR Scan
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RFP42N03L,
F1S42N
03LSM
RF1S42N03L,
RF1S42N03LSM
TA49030.
1-800-4-H
f42n03l
2n03l
42N03L
F42N03
RFP42N03L
T0263AB
32 N03L
RF1S42N03L
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PDF
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Untitled
Abstract: No abstract text available
Text: A dvanced P o w er Te c h n o l o g y O D APT5012LNR O S POWER MOS IV 500V 42.0A 0.12Q AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATING S Symbol V DSS 'd All Ratings: T c = 25°C unless otherwise specified. Parameter
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APT5012LNR
O-264AA
MIL-STD-750
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PDF
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APT5012LNB
Abstract: APT5012LNR APT5012L
Text: ADVANCED PO W ER Te c h n o lo g y O D APT5012LNR Ô S 3* WER MOS 500V 42.0A 0.12Ü AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS M AXIM UM RATING S Symbol VDSS 'o ' dm VGS VGSM All Ratings: T c = 25°C unless otherwise specified.
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OCR Scan
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APT5012LNR
APT5012LNR
MIL-STD-750
-264A
APT5012LNB
APT5012L
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PDF
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Untitled
Abstract: No abstract text available
Text: 3 7E SEMELAB LTD D 0133107 0D00257 b • s iilb ' Æ ]L/ SEMELAB *BUZ 46 ’ MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm APPLICATIONS • SMPS • ARC WELDING • D.C. MOTOR CONTROL PIN 1-G a te PIN 2 -S o u rc e C A S E -D rain
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0D00257
150PC
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PDF
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APT5012LNR
Abstract: diode AR s1 56 XS16
Text: A d van ced P o w er Te c h n o l o g y O D APT5012LNR O s POWER MOS IV‘ 500V 42.0A 0.12a AVALANCHE RATED N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM R A T IN G S Symbol V DSS 'dm V GS V GSM All Rutinn*- T - Parameter Drain-Source Voltage
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OCR Scan
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APT5012LNR
MIL-STD-750
O-264AA
diode AR s1 56
XS16
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PDF
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ZYT 11 FD
Abstract: rx5re RH5RL50AA-T1 RX5RL20A CI 4583 5RL30A
Text: K D t ë t D Q VOLTAGE REGULATOR l RX5RL SERIES •OUTLINE The RX5RL Series are voltage regulator ICs w ith high accuracy o utput voltage and ultra-low quiescent c u r re n t by CMOS process. E ach of these ICs consists of a voltage reference unit, an e rror amplifier, a driver t r a n
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OCR Scan
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OT-89
OT-23-5
RX5RL30A
5RL50A
7744bciD
00D2bll
ZYT 11 FD
rx5re
RH5RL50AA-T1
RX5RL20A
CI 4583
5RL30A
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