DISCRETE THYRISTOR CHIP Search Results

DISCRETE THYRISTOR CHIP Result Highlights (5)

Part	Manufacturer	Description
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
TRS8E65H	Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L
TBAW56	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 80 V, 0.215 A, SOT23
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TRS10E65H	Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L

DISCRETE THYRISTOR CHIP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
rjh3047 Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing	Original	PDF	REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
RJP63k2 Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606 Text: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching	Original	PDF	R07CS0003EJ0100 RJP63k2 rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	PDF	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram
rjp6065 Abstract: RJP6006 rjp3053 rjh60f5 TRANSISTOR SMD MARKING CODE jg BCR1AM-12A equivalent RJH60F7 RJP3063 triac kt 207 600v RJP6006DPK Text: 2009.12 Renesas Discrete General Catalog Transistor/Diode/Triac/ Thyristor www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Amplification Transistors Power Devices Non-MOS Low-voltage MOS Low switching loss and high speed High-voltage MOS Package current capacity and thermal resistance	Original	PDF
IRU1239SC Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK	Original	PDF	100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
rca thyristor manual Abstract: PBA transistor "RCA Solid State thyristor ic k1 RCA Solid state Linear Integrated Circuits 1970s SGT10S10 BELLCORE tr-nwt-001089 I3124 DIODE D5 R3612 Text: R3612 PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC Copyright 1997, Power Innovations Limited, UK DECEMBER 1995 - REVISED SEPTEMBER 1997 OVERVOLTAGE PROTECTION FOR ERICSSON COMPONENTS LINE INTERFACE CIRCUITS ● PBA 3357/3 DCLIC Overvoltage Protector	Original	PDF	R3612 rca thyristor manual PBA transistor "RCA Solid State thyristor ic k1 RCA Solid state Linear Integrated Circuits 1970s SGT10S10 BELLCORE tr-nwt-001089 I3124 DIODE D5 R3612
WESTINGHOUSE scr Abstract: Westinghouse thyristor POW-R-BRIK WESTINGHOUSE scr fast dc to ac inverter by scr Text: Power Semiconductor Solutions EXPERTISE INNOVATION RELIABILITY Powerex Quick Reference Guide Assemblies Air Cooled / Liquid Cooled / Integrated Power Structures POWER SEMICONDUCTOR SOLUTIONS Applications Include: • Battery Chargers  Induction Heating/Melting	Original	PDF	202/3K/Pub. WESTINGHOUSE scr Westinghouse thyristor POW-R-BRIK WESTINGHOUSE scr fast dc to ac inverter by scr
single phase thyristor controller ic Abstract: 2 x 20w amplifier Peak and Hold PWM MOSFET Predriver sc70-5 mosfet driver 2N7002-SOT23 NCP1652 NCS2560 dpdt array circuit mosfet ac switch UDFN-8 Text: The information contained in this Quarterly Update represents ON Semiconductor’s current and planned new products. For additional information regarding any of these products, please visit our website at www.onsemi.com. Operational Amplifiers/Comparators	Original	PDF	NCS2001A NCS2530A NCS2560 NCS2561 NCS2561A NCS2563 SOIC-14 SC88-6 SOI75 SGD503-29 single phase thyristor controller ic 2 x 20w amplifier Peak and Hold PWM MOSFET Predriver sc70-5 mosfet driver 2N7002-SOT23 NCP1652 NCS2560 dpdt array circuit mosfet ac switch UDFN-8
SIEMENS THYRISTOR Abstract: TEMPFET SIEMENS THYRISTOR thy pwm thyristor thyristor control ic with current sense Discrete Thyristor Chip siemens thy mosfet controlled thyristor SIEMENS FAST THYRISTOR 6 thyristor driver circuit Text: Speed TEMPFET HL Application Note Temperature sense concept – Speed Tempfet® Principle of the temperature sense concept of the Speed-TEMPFET family Benno Köppl Introduction The well-known classic TEMPFET products from Siemens are a cost-effective solution for	Original	PDF
IXYS CORPORATION Abstract: MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ Text: NEWS PCIM 2013 IXYS Efficiency through Technology ComPack Thyristor Module Platform A new Design that reduces Parts and Material Costs with Higher Power Density has a 33% reduced footprint and weight 67% less than current alternatives, significantly illustrating how IXYS’ MORE POWER, LESS	Original	PDF	DMA10P1600PZ /1600V) CMA50E1600TZ DSP45-16TZ O-263 D-68623 CH-2555 IXYS CORPORATION MTI85W100GC CLB30I1200HB 200WX75GD Thyristor 12kV 10 kA MTI200WX75GD AGT ssr up/MTI85W100GC MTI relay CMA30E1600PZ
SKIIP 32 nab 12 t 49 Abstract: SKiiP 33 NEC 125 To skiip 33 ups 063 semikron skiip 24 nab 125 t 12 thyristor firing circuit SEMIKRON SKIIP 20 NAB 12 T 17 semikron skiip 20 nab 12 I T 38 Semikron skiip 31 nab 12 semikron skiip 81 AN 15 T semikron skiip 32 nab 12 Text: MiniSKiiP Do it your way MiniSKiiP Technology • Pressure contact of all power and auxiliary connections instead of soldered joints. ■ Integration of latest chip technology: • Low switching loss, 600V or 1200V, homogeneous NPT IGBTs with antiparallel	Original	PDF	D-90253 SKIIP 32 nab 12 t 49 SKiiP 33 NEC 125 To skiip 33 ups 063 semikron skiip 24 nab 125 t 12 thyristor firing circuit SEMIKRON SKIIP 20 NAB 12 T 17 semikron skiip 20 nab 12 I T 38 Semikron skiip 31 nab 12 semikron skiip 81 AN 15 T semikron skiip 32 nab 12
all type of thyristor Abstract: mosfet power class d Discrete Thyristor Chip 1200 A thyristor 6912 mosfet rectifier diode thyristor phase control chip ixys thyristor thyristor 60 A IXYS CDWEP Text: Symbols and Definitions Cies Ciss -di/dt IC ID IF IF AV M IFSM IGT IR IRM IT IT(AV)M ITSM RDS(on) Rthjc rT Tcase Th tfi Tj, T(vj) Tjm, T(vj)m trr VCE(sat) VCES VDRM VDSS VF VR VRRM VT VT0 Input capacitance of IGBT Input capacitance of MOSFET Rate of decrease of forward current	Original	PDF	TS2/765/17557 D-68623 all type of thyristor mosfet power class d Discrete Thyristor Chip 1200 A thyristor 6912 mosfet rectifier diode thyristor phase control chip ixys thyristor thyristor 60 A IXYS CDWEP
thyristor lifetime Abstract: No abstract text available Text: / Thyristor Diode Modules One of the essential advantages of power semiconductor modules compared to discrete designs is the electrical isolation between the baseplate of the module and the parts subject to voltage 3.6 kVRMS tested . This makes possible the mountdown of	OCR Scan	PDF
thyristor lifetime Abstract: No abstract text available Text: Thyristor / Diode Modules One of the essential advantages of power semiconductor modules compared to discrete designs is the electrical isolation between the baseplate of the module and the parts subject to voltage 3.6 kVRMS tested . This makes possible the mountdown of	OCR Scan	PDF

Discrete Thyristor Chip Abstract: No abstract text available Text: Thyristor / Diode Modules One of the essential advantages of pow er sem iconductor modules com pared to discrete designs is the electrical isolation between the baseplate of the m odule and the parts subject to voltage 3.6 kV HMS tested . This m akes possible the m ountdow n of	OCR Scan	PDF
thyristor lifetime Abstract: all type of thyristor Discrete Thyristor Chip thyristor modules Text: Thyristor / Diode Modules One of the essential advantages of power sem iconductor modules com pared to discrete designs is the electrical isolation between the baseplate of the module and the parts subject to voltage 3.6 kVRUS tested . This makes possible the mountdown of any number of the same or diffe	OCR Scan	PDF
2N6070 MOTOROLA Abstract: 2N6070 2N6074 2N6069 2n6070 triac 2N6068 2N6072 triac 2n6073 triac 2N6070 2N6073 motorola Text: 3M MOTOROLA SC -CDIODES/OPTO} 6367255 M O T O R OL A SC DE\|b3t ,7H SS 0030157 S D IO D E S /O P T O 34C 38157 T - Z fJ f - O ' SILICON THYRISTOR DIE (continued) 2C6075 CHIP NO. LINE SOURCE — DTL0401 Device assembled from this die type are similar to or	OCR Scan	PDF	DTL0401 2N6068 2N6069 2N6070 2N6071 2N6072 2N6073 2N6074 2N6075 2C6075 2N6070 MOTOROLA 2n6070 triac triac 2n6073 triac 2N6070 2N6073 motorola
AC15A Abstract: TRIAC FT 12 thyristor FT 12 2N5570 triac Motorola Discrete Thyristor Chip 2N5571 Text: MOTOROLA SC i DIODES/O PTO ï 6367255 MOTOROLA SC 34 D E § b3t>7555 0030155 1 DIODES/OPTO 34C 38155 T * SILICON THYRISTOR DIE (continued) 2 s'-z'dr 2C5574 CHIP NO. LINE SOURCE — DTL0420 Device assembled from this die type are similar to or better than the following device types:	OCR Scan	PDF	DTL0420 2N5567 2N5568 2NSS69 2N5570 2N5571 2N5572 2N5573 2N5S74 2C5574 AC15A TRIAC FT 12 thyristor FT 12 triac Motorola Discrete Thyristor Chip
Triac 2N5444 Abstract: MAC50 2N5446 triac Motorola Text: MOTOROLA SC Í DI ODES/OPTO} i 6 3 6 7 2 5 5 MOTOROLA SC "34 ÍF\|t,3b7SSS DD3aiSW 7 \|"~ DI ODES/ OPTO 34C 3 8 15 4 7^ 2- 5" - SILICON THYRISTOR DIE (continued) / 7 2C5446 CHIP NO. UNE SOURCE — DTL0440 Device assembled from this die type are similar to or	OCR Scan	PDF	DTL0440 2N5441 2N5442 2N5443 2N5444 2N5445 2N5446 MAC50, 2C5446 Triac 2N5444 MAC50 triac Motorola
TRIAC FT 12 Abstract: triac Motorola Text: MOTOROLA SC 34 -CDIODES/OPTOJ 6367255 MOTOROLA SC DeT J b3t,725S GD3fllb2 L> < D I O D E S/ O PT O 34C 38162 zr-'/îT D SILICON THYRISTOR DIE continued) MACC222A-10 SERIES chip no. LINE SOURCE — DTL0410 Device assembled from this die type are similar to or	OCR Scan	PDF	DTL0410 MACC222A-10 MAC222 TRIAC FT 12 triac Motorola
2N6164 Abstract: 2N6161 2N6165 2N6162 2n6163 Text: 34 M OT O RO L A SC - C D I O D E S / O P T O J "5367255 MOTOROLA SC D Ë T \| b 3h 72S S 003015^ t, <D I O D E S / O P T O 34C t 38159 - i r * ty SILICON THYRISTOR DIE continued) 2C6165 CHIP NO. LINE SOURCE — DTL0430 Device assembled from this die type are similar to or	OCR Scan	PDF	DTL0430 2N6157 2N6158 2N6159 2N6160 2N6161 2N6162 2N6163 2N6164 2N6165
BYX38-600 Abstract: germanium rectifier diode byx38 diode germanium varactor diode BYX38 Text: TYPE DESIGNATION J^ PRO ELECTRON TYPE DESIGNATION CODE FOR SEMICONDUCTOR DEVICES This type designation code applies to discrete semiconductor devices — as opposed to integrated circuits — , multiples of such devices and semiconductor chips. "Although not all type numbers accord with the Pro Electron system, the following explanation is given	OCR Scan	PDF	BYX38-600 BZY93-C7V5 BYX38 BZY93 germanium rectifier diode byx38 diode germanium varactor diode
rca thyristor manual Abstract: diode lt 341 1W1000 RG35A "RCA Solid State thyristor Text: B3612 PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC D ECEM BER 1995 - B 6V IS6 0 SfiPfeM HEFI 1897 Copyright 1997. Power Innovations Limited. UK OVERVOLTAGE PROTECTION FOR ERICSSON COMPONENTS LINE INTERFACE CIRCUITS • PBA 3357/3 DCLIC Overvoltage Protector	OCR Scan	PDF	B3612 RLM88 T-001089 R3612 TCM1060 R3612 1W1000 rca thyristor manual diode lt 341 RG35A "RCA Solid State thyristor
P-Channel Depletion Mode FET Abstract: 5155 transistor Depletion MOSFET 20V HV Diode breadboard 400 dc voltage regulator using thyristor P-Channel mosfet 400v 0.5A Text: USH5155; USH5156 ISOPOWER HIGH VOLTAGE Universal Semiconductor FEATURES • • • • • • 500V Devices Dielectrically isolated Silicon gate CMOS/DMOS technology Freedom from latch-up Ultra Low leakage Rad-Hard devices DESCRIPTION The USH5155 and USH5156 are high voltage Kit Parts de	OCR Scan	PDF	USH5155; USH5156 USH5155 USH5156 P-Channel Depletion Mode FET 5155 transistor Depletion MOSFET 20V HV Diode breadboard 400 dc voltage regulator using thyristor P-Channel mosfet 400v 0.5A

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DISCRETE THYRISTOR CHIP Search Results

DISCRETE THYRISTOR CHIP Result Highlights (5)

DISCRETE THYRISTOR CHIP Datasheets Context Search

rjh3047

RJP63k2

RJJ0319DSP

rjp6065

IRU1239SC

rca thyristor manual

WESTINGHOUSE scr

single phase thyristor controller ic

SIEMENS THYRISTOR

IXYS CORPORATION

SKIIP 32 nab 12 t 49

all type of thyristor

thyristor lifetime

thyristor lifetime

Discrete Thyristor Chip

thyristor lifetime

2N6070 MOTOROLA

AC15A

Triac 2N5444

TRIAC FT 12

2N6164

BYX38-600

rca thyristor manual

P-Channel Depletion Mode FET