DK 52 TRANSISTOR Search Results

DK 52 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

DK 52 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Datasheet PD48288109A μPD48288118A R10DS0098EJ0200 Rev.2.00 May 10, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.	Original	PD48288109A PD48288118A 288M-BIT 432-word PD48288118A 216-word R10DS0098EJ0200	PDF
Untitled Abstract: No abstract text available Text: Datasheet PD48288109A μPD48288118A R10DS0098EJ0300 Rev.3.00 Oct 01, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.	Original	PD48288109A PD48288118A 288M-BIT 432-word PD48288118A 216-word R10DS0098EJ0300	PDF
Untitled Abstract: No abstract text available Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0300 Rev.3.00 Oct 01, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.	Original	PD48576109 PD48576118 576M-BIT 864-word PD48576118 R10DS0064EJ0300	PDF
Untitled Abstract: No abstract text available Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0200 Rev.2.00 May 10, 2012 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.	Original	PD48576109 PD48576118 576M-BIT 864-word PD48576118 R10DS0064EJ0200	PDF
tp2350 Abstract: J200 mosfet DK 51* transistor IRF950 TRIPATH TC2001 250w audio amplifier circuit diagram capacitor 4.7uF 100v crossover passive TRIPATH pin connection of j200 transistor TK2350 Text: Tr i path Technol ogy, I nc. - Technical Information RB-TK2350-1 RB-TK2350-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Revision 1.5 June 2002 GENERAL DESCRIPTION The RB-TK2350 reference board is based on the TK2350 digital audio power amplifier	Original	RB-TK2350-1 RB-TK2350-2 RB-TK2350 TK2350 RB-TK2350, RB-TK2350-1 /-21V /-39V tp2350 J200 mosfet DK 51* transistor IRF950 TRIPATH TC2001 250w audio amplifier circuit diagram capacitor 4.7uF 100v crossover passive TRIPATH pin connection of j200 transistor	PDF
TP2350B Abstract: J200 mosfet tp2350 TRIPATH TC2001 TK2350 2 speakers 1 crossover amplifier pcb RB-TK2350-2 MURS120T Tripath Amplifier Tripath Technology Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on RB-TK2350-1 RB-TK2350-2 CLASS-T DIGITAL AUDIO AMPLIFIER REFERENCE BOARD USING DIGITAL POWER PROCESSING DPP T M TECHNOLOGY Technical Information Revision 2.2 November 2004 GENERAL DESCRIPTION The RB-TK2350 reference board is based on the TK2350 digital audio power amplifier chipset from	Original	RB-TK2350-1 RB-TK2350-2 RB-TK2350 TK2350 RB-TK2350-1 /-21V /-39V /-35V TP2350B J200 mosfet tp2350 TRIPATH TC2001 2 speakers 1 crossover amplifier pcb RB-TK2350-2 MURS120T Tripath Amplifier Tripath Technology	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.	Original	PD48288118 288M-BIT PD48288118	PDF
p144f Abstract: TDK EF25 BAP36 PD482 Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118-A 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.	Original	PD48288118-A 288M-BIT PD48288118-A M8E0904E p144f TDK EF25 BAP36 PD482	PDF
Untitled Abstract: No abstract text available Text: Datasheet PD48288118-A 288M-BIT Low Latency DRAM Separate I/O R10DS0157EJ0100 Rev.1.00 Feb 01, 2013 Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.	Original	PD48288118-A 288M-BIT R10DS0157EJ0100 PD48288118-A	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.	Original	PD48288118 288M-BIT PD48288118	PDF
PD48576109, Abstract: No abstract text available Text: Datasheet PD48576109 μPD48576118 R10DS0064EJ0100 Rev.1.00 September 27, 2011 576M-BIT Low Latency DRAM Separate I/O Description The μPD48576109 is a 67,108,864-word by 9 bit and the μPD48576118 is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.	Original	PD48576109 PD48576118 576M-BIT 864-word PD48576118 R10DS0064EJ0100 PD48576109,	PDF
BA2rc Abstract: No abstract text available Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.	Original	PD48288118 288M-BIT PD48288118 BA2rc	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet PD48288109A μPD48288118A R10DS0098EJ0001 Rev.0.01 August 2, 2011 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.	Original	PD48288109A PD48288118A R10DS0098EJ0001 288M-BIT PD48288109A 432-word PD48288118A 216-word	PDF
Untitled Abstract: No abstract text available Text: Datasheet PD48288109A μPD48288118A R10DS0098EJ0100 Rev.1.00 February 28, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.	Original	PD48288109A PD48288118A 288M-BIT 432-word PD48288118A 216-word R10DS0098EJ0100	PDF

ks 213 b Abstract: AMD fm2 Pin Package IC818 LCD 1620 uPD1723 LCD KS 108 PD1723GF-013 LCD 1620 datasheet LCD display 1602 car radio 14x20 Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD1723GF-013, µPD1723GF-213 PLL FREQUENCY SYNTHESIZER AND CONTROLLER FOR FM/MW/LF TUNER CAR AUDIO The µPD1723GF-013 and µPD1723GF-213 are CMOS LSI developed for worldwide PLL frequency synthesizer FM/MW/LW tuner use.	Original	PD1723GF-013, PD1723GF-213 PD1723GF-013 PD1723GF-213 64-pin ks 213 b AMD fm2 Pin Package IC818 LCD 1620 uPD1723 LCD KS 108 LCD 1620 datasheet LCD display 1602 car radio 14x20	PDF
LCD12 Abstract: Car FM tuner car radio 14x20 NEC car radio 4.5-Mhz PD1723GF-013 LCD15 Tuner UPD1723GF 10.7 MHZ Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
LZ9FC22 Abstract: schematic diagram tv sharp ADS7486 S1L50282F23K100 sharp lcd panel pinout transistor D400 SERVICE MANUAL tv sharp sharp lcd service manual NL2432DR22-11B tv schematic diagram SHARP power supply Text: Application Report SPRA968 - November 2003 Connecting TFT LCD Displays to the OMAP5910 Gerald Coley DSPIEEE Catalog OMAP Applications ABSTRACT The OMAP5910 contains an integrated LCD controller. Utilizing internal memory and dedicated DMA channels, this architecture contains a very efficient LCD control interface.	Original	SPRA968 OMAP5910 OMAP5910 OMAP5910. LZ9FC22 schematic diagram tv sharp ADS7486 S1L50282F23K100 sharp lcd panel pinout transistor D400 SERVICE MANUAL tv sharp sharp lcd service manual NL2432DR22-11B tv schematic diagram SHARP power supply	PDF
600S4R7BT250 Abstract: ecj2yb1h104k Text: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency	Original	SLD-1026Z SLD-1026Z 2700MHz. ERJ-3EKF3240V EVM-2WSX80B52 ERJ-EKF49R9V ERJ-3EKF1300V 9C06031A2100FKHFT ERJ-3GSY0R00V 600S4R7BT250 ecj2yb1h104k	PDF
SWITCH 255SB Abstract: MA05-2 pin header nanoLOC TRX Transceiver user guide nanoLOC nanoLOC Development d-sub F09HP all stk ic diagram crystal 7.3728MHz zigbee based mini projects tsl2561t Text: nanoLOC Development Kit User Guide Version 1.03 NA-06-0230-0402-1.03 Document Information nanoLOC Development Kit User Guide Document Information Document Title: nanoLOC Development Kit User Guide Document Version: 1.03 Published yyyy-mm-dd : 2007-02-27 Current Printing:	Original	NA-06-0230-0402-1 SWITCH 255SB MA05-2 pin header nanoLOC TRX Transceiver user guide nanoLOC nanoLOC Development d-sub F09HP all stk ic diagram crystal 7.3728MHz zigbee based mini projects tsl2561t	PDF
600S2R7BT250XT Abstract: ERT-J1VV104J transistor smd 303 IC 2030 schematic diagram 850 SMD Rework Station thermistor 100k sld1026 smd transistor r32 600L270 r5 t85 Text: Preliminary SLD-1026Z Product Description Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation from 10 to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency	Original	SLD-1026Z SLD-1026Z 2700MHz. SOF-26 AN-090, EDS-104157 600S2R7BT250XT ERT-J1VV104J transistor smd 303 IC 2030 schematic diagram 850 SMD Rework Station thermistor 100k sld1026 smd transistor r32 600L270 r5 t85	PDF
STA-5063Z Abstract: 5.8ghz 802.11a Amplifier land pattern for 0402 cap MMIC 5.8ghz SIRENZA MARKING SOT-363 transistor amplifier 3 ghz STA-5063 T50Z Text: Product Description Sirenza Microdevices’ STA-5063Z is a general purpose class A linear amplifier which utilizes InGaP GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This product is specifically	Original	STA-5063Z OT-363 STA-5063Z EDS-102990 5.8ghz 802.11a Amplifier land pattern for 0402 cap MMIC 5.8ghz SIRENZA MARKING SOT-363 transistor amplifier 3 ghz STA-5063 T50Z	PDF
LLDRAM Abstract: No abstract text available Text: Preliminary GS4576C09/18/36L 144-Ball BGA Commercial Temp Industrial Temp 64M x 9, 32M x 18, 16M x 36 576Mb CIO Low Latency DRAM LLDRAM II 533 MHz–300 MHz 2.5 V VEXT 1.8 V VDD 1.5 V or 1.8 V VDDQ Features Introduction • Pin- and function-compatible with Micron RLDRAM II	Original	GS4576C09/18/36L 144-Ball 067Gb/s/pin 4576Cxx LLDRAM	PDF
TC518512 Abstract: transistor dk qq Text: TOSHIBA TC518512PiyFiyFn/niL-70 DR /80(DK)/10(DK) SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description T h e T C 5 1 8 5 1 2 P L is a 4 M bit high speed C M O S p se udo static RAM organized as 52 4,28 8 w o rd s by 8 bits. The TC 5 1851 2P L utilizes	OCR Scan	TC518512PiyFiyFn/niL-70 D-182 TC518512PL/FL/FTL/TRL-70 D-183 TC518512 transistor dk qq	PDF
NEC car radio 4.5-Mhz Abstract: LCO17 SP MZ8 transistor dk 50 NEC PD6121 diodo 72 DIODO LED Hoshiden LED display for radio pd7225 Text: P R E L IM IN A R Y D A TA S H E E T M O S IN T E G R A T E D C IR C U IT uPD17012GF-011 PLL Frequency Synthesizer and Controller for Car Audio FM, MW, and LW Tuners The/iPD17012GF-011 isa CMOS LSI that was developed for FM, M W ,and LW tu n ers em ploying the world	OCR Scan	PD17012GF-011 NEC car radio 4.5-Mhz LCO17 SP MZ8 transistor dk 50 NEC PD6121 diodo 72 DIODO LED Hoshiden LED display for radio pd7225	PDF

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DK 52 TRANSISTOR Search Results

DK 52 TRANSISTOR Result Highlights (5)

DK 52 TRANSISTOR Datasheets Context Search

Untitled

Untitled

Untitled

Untitled

tp2350

TP2350B

Untitled

p144f

Untitled

Untitled

PD48576109,

BA2rc

Untitled

Untitled

ks 213 b

LCD12

LZ9FC22

600S4R7BT250

SWITCH 255SB

600S2R7BT250XT

STA-5063Z

LLDRAM

TC518512

NEC car radio 4.5-Mhz