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    DOUBLE MATCH TRANSISTOR Search Results

    DOUBLE MATCH TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DOUBLE MATCH TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MASWGM0002-DIE

    Abstract: No abstract text available
    Text: Switch, Single-Pole, Double-Throw 2.0-20.0 GHz MASWGM0002-DIE 903230 — Preliminary Information Features ♦ ♦ ♦ ♦ ♦ 2.0-20.0 GHz Operation 3 dB Insertion Loss TTL Control Excellent Match on Off Port MSAG Process Description The MASWGM0002-Die is a single pole double throw switch


    Original     		PDF MASWGM0002-DIE MASWGM0002-Die

    er900

    Abstract: capacitor 220 microfarad 220 microfarad capacitor 1N3064 SCELL500 SD1650 CAPACITOR 1000 MICROFARAD capacitor, 1000 microfarad of 1000 microfarad electrolytic capacitor SD1438
    Text: SD1650 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . . REFRACTORY/GOLD METALLIZATION DOUBLE STEP INPUT/OUTPUT MATCH 850-960 MHz CLASS AB LINEAR COMMON EMITTER POUT = 60 W MIN. WITH 7 dB MIN GAIN .400 6LFL M169 epoxy sealed ORDER CODE


    Original     		PDF SD1650 SCELL500 SD1650 er900 capacitor 220 microfarad 220 microfarad capacitor 1N3064 SCELL500 CAPACITOR 1000 MICROFARAD capacitor, 1000 microfarad of 1000 microfarad electrolytic capacitor SD1438

    capacitor 220 microfarad

    Abstract: SD1438-02 1 microfarad capacitor 0.1 microfarad capacitor 0.1 microfarad electrolytic capacitor capacitor, 0,1 microfarad 1N3064 SCELL500 SD1650 of 1000 microfarad electrolytic capacitor
    Text: SD1650 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . . REFRACTORY/GOLD METALLIZATION DOUBLE STEP INPUT/OUTPUT MATCH 850-960 MHz CLASS AB LINEAR COMMON EMITTER P OUT = 60 W MIN. WITH 7 dB MIN GAIN .400 6LFL M169 epoxy sealed ORDER CODE


    Original     		PDF SD1650 SCELL500 SD1650 capacitor 220 microfarad SD1438-02 1 microfarad capacitor 0.1 microfarad capacitor 0.1 microfarad electrolytic capacitor capacitor, 0,1 microfarad 1N3064 SCELL500 of 1000 microfarad electrolytic capacitor

    F10-S30

    Abstract: F10-C11 F10-C10 F10-S15 F10-C15 F10-C16 IEC60529 omron f10-s15
    Text: R F10 Vision Sensor F10 Affordable F10 Vision Sensor with One-Touch Setup Requires No Programming H Ensures fast, accurate inspections such as label pattern match, print verification, label placement, and conformity rejects upside-down, tilted or double labels


    Original     		PDF F10-C10/-C15 F10-C10 F10-C15 F10-C11 F10-C16 F10-C11/-C16 1-800-55-OMRON D089-E3-1 10/99/10M, F10-S30 F10-C11 F10-C10 F10-S15 F10-C15 F10-C16 IEC60529 omron f10-s15

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MS1551 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS Features • • • • • • 850-960 MHz 24 VOLTS POUT = 60 WATTS GP = 7.0 dB MINIMUM DOUBLE STEP INPUT/OUTPUT MATCH


    Original     		PDF MS1551 MS1551 300mA

    Untitled

    Abstract: No abstract text available
    Text: MS1551 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS Features • • • • • • 850-960 MHz 24 VOLTS POUT = 60 WATTS GP = 7.0 dB MINIMUM DOUBLE STEP INPUT/OUTPUT MATCH COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1551 is designed for 900 MHz cellular radio base station


    Original     		PDF MS1551 MS1551 300mA

    Untitled

    Abstract: No abstract text available
    Text: Switch, Single-Pole, Double-Throw 2.0—8.0 GHz MASWGM0003-DIE 903231 — Preliminary Information Features ♦ ♦ ♦ ♦ ♦ ♦ 2.0-8.0 GHz Operation 3 dB Insertion Loss Non-Reflective TTL Control Excellent Match on Off Port MSAG Process Description


    Original     		PDF MASWGM0003-DIE MASWGM0003-DIE

    Design Considerations for BJT Active Mixers

    Abstract: Signal mixing NE602 nokia 5300 agilent ads balun diodes 4001 8970B nokia 1662 NE602 equivalent EESof nokia fasb
    Text: Noise in Ring Topology Mixers Rick Poore Agilent EEsof EDA 1 Introduction For a classical double-balanced ring-diode mixer, it is expected that the conversion loss 4–5 dB should match the noise figure. This document explores the formal definition of noise figure and


    Original     		PDF

    OMRON F10-C55

    Abstract: OMRON F10-C25 omron F10-S30R OMRON F10-S15R C20 OMRON Operation Manual OMRON F10-C20 F10-S15R F10-S50R B500-AL001 F10-S30R
    Text: Pattern Matching Sensor F10 Affordable F10 Vision Sensor with One-Touch Setup, 8-bank memory, and RS-232C/RS-422 Communication H Ensures fast, accurate inspections such as label pattern match, print verification, label placement, and conformity rejects upside-down, tilted or double labels


    Original     		PDF RS-232C/RS-422 1-800-55-OMRON D089-E3-3 OMRON F10-C55 OMRON F10-C25 omron F10-S30R OMRON F10-S15R C20 OMRON Operation Manual OMRON F10-C20 F10-S15R F10-S50R B500-AL001 F10-S30R

    MASWGM0005-DIE

    Abstract: No abstract text available
    Text: Switch, Single-Pole, Double-Throw DC-5.0 GHz MASWGM0005-DIE 903219 — Preliminary Information Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ DC-5.0 GHz Operation 1 dB Insertion Loss 55 dB Isolation Class I ESD TTL Control Excellent Match on Off Port MSAG Process


    Original     		PDF MASWGM0005-DIE MASWGM0005-Die

    BFG403W

    Abstract: 0805CS Series amplifier 900mhz 0805CS 900MHz LOW NOISE AMPLIFIER WITH THE BFG403W
    Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-006 : T.F. Buss : Jan. 6 1997 : P.G. Transistors & Diodes, Development 900MHz LOW NOISE AMPLIFIER WITH THE BFG403W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG403W Double Poly


    Original     		PDF RNR-T45-97-B-006 900MHz BFG403W BFG403W 900MHz, 900MHz: 0805CS 0805CS Series amplifier 900mhz 900MHz LOW NOISE AMPLIFIER WITH THE BFG403W

    Philips npo 0805

    Abstract: 5Ghz lna transistor datasheet BFG425W 0805CS Series BFG425W APPLICATION philips satellite systems w2 smd transistor 0805CS CMP230 CMP231
    Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0584 : T.F. Buss : 16-07-97 : P.G. Transistors & Diodes, Development 1.5GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly


    Original     		PDF RNR-T45-97-B-0584 BFG425W BFG425W CMP266 s10mi CMP403 CMP351 CMP250 CMP270 Philips npo 0805 5Ghz lna transistor datasheet 0805CS Series BFG425W APPLICATION philips satellite systems w2 smd transistor 0805CS CMP230 CMP231

    power amplifier circuit diagram with pcb layout

    Abstract: BFG480W transistor amplifier 3 ghz MGS629 power amplifier circuit diagram with pcb layout 2 BFG400 0805CS TRANSISTOR noise figure measurements philips circuit diagram
    Text: APPLICATION INFORMATION 2.4 GHz low noise amplifier with the BFG480W Philips Semiconductors Application information 2.4 GHz low noise amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W is one of the Philips double polysilicon wideband transistors of the BFG400 series.


    Original     		PDF BFG480W BFG480W BFG400 MGS629 power amplifier circuit diagram with pcb layout transistor amplifier 3 ghz MGS629 power amplifier circuit diagram with pcb layout 2 0805CS TRANSISTOR noise figure measurements philips circuit diagram

    L05 SMD

    Abstract: CMP266 RNR-T45-96-B-1025 L6 PHILIPS transistor smd Sb1 BFG425W CMP401 BFG400W CMP409 CMP231
    Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-1025 : T.F. Buss : 10 Dec. 1996 : P.G. Transistors & Diodes, Development IMPROVED IP3 BEHAVIOUR OF THE 900MHz LOW NOISE AMPLIFIER WITH THE BFG425W


    Original     		PDF RNR-T45-96-B-1025 900MHz BFG425W RNR-T45-96-B-771 BFG425W 900MHz, 900MHz: CMP257 CMP383 L05 SMD CMP266 RNR-T45-96-B-1025 L6 PHILIPS transistor smd Sb1 CMP401 BFG400W CMP409 CMP231

    transistor bipolar driver schematic

    Abstract: BFG425W RNR-T45-97-B-0787 2Ghz amplifier BFG425 BFG425W APPLICATION b0787
    Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0787 : T. Buss : 29 Sept 1997 : P.G. Transistors & Diodes, Development 2GHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a frequency f=2GHz.


    Original     		PDF RNR-T45-97-B-0787 BFG425W BFG425W 15dBm BFG400W -30dBm, BFG425W, transistor bipolar driver schematic RNR-T45-97-B-0787 2Ghz amplifier BFG425 BFG425W APPLICATION b0787

    BFG425W

    Abstract: BFG425W APPLICATION RNR-T45-97-B-0686 transistor bipolar driver schematic Z048
    Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0686 : T. Buss : 22 Aug1997 : P.G. Transistors & Diodes, Development 900MHz DRIVER-AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a frequency f=900MHz.


    Original     		PDF RNR-T45-97-B-0686 Aug1997 900MHz BFG425W BFG425W 900MHz. 900MHz, do30dBm, -30dBm, BFG425W APPLICATION RNR-T45-97-B-0686 transistor bipolar driver schematic Z048

    BFG425W

    Abstract: 900mhz driver amplifier 900mhz DRIVER DESIGN philips c3 RF 900MHz
    Text: Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-0688 : T. Buss : 26 Aug 1997 : P.G. Transistors & Diodes, Development 900MHz DRIVER-AMPLIFIER WITH ENABLE-SWITCH USING THE BFG425W Abstract:


    Original     		PDF RNR-T45-97-B-0688 900MHz BFG425W BFG425W 900MHz. 900MHz, 900mhz driver amplifier 900mhz DRIVER DESIGN philips c3 RF 900MHz

    Untitled

    Abstract: No abstract text available
    Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-97-B-375 : T. Buss : 20 May 1997 : P.G. Transistors & Diodes, Development 2GHz BUFFER-AMPLIFIER WITH THE BFG410W Abstract: This application note contains an example of a Buffer-Amplifier with the new BFG410W Double Poly RFtransistor. The buffer is designed for a frequency f=2GHz. Performance at f=2GHz: Isolation S12~-31dB,


    Original     		PDF RNR-T45-97-B-375 BFG410W BFG410W -31dB,

    BFG425

    Abstract: BFG425W BFG410W TRANSISTOR noise figure measurements 2 GHz LNA RNR-T45-96-B-773
    Text: H Philips Semiconductors B.V. Gerstweg 2, 6534 AE Nijmegen, The Netherlands Report nr. Author Date Department : RNR-T45-96-B-773 : T. Buss : 14-Nov-1996 : P.G. Transistors & Diodes, Development 2GHz LOW NOISE AMPLIFIER WITH THE BFG425W Abstract: This application note contains an example of a Low Noise Amplifier with the new BFG425W Double Poly


    Original     		PDF RNR-T45-96-B-773 14-Nov-1996 BFG425W BFG425W BFG400W 100KHz BFG425 BFG410W TRANSISTOR noise figure measurements 2 GHz LNA RNR-T45-96-B-773

    MGS731

    Abstract: BFG480W MGS732 0805CS BP317
    Text: APPLICATION INFORMATION 900 MHz low noise amplifier with the BFG480W Philips Semiconductors 900 MHz low noise amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400W series.


    Original     		PDF BFG480W BFG480W, BFG400W 125006/01/pp8 MGS731 BFG480W MGS732 0805CS BP317

    solenoid injector

    Abstract: AN2933 MLRB TBS-B
    Text: Freescale Semiconductor Application Note AN2933 Rev. 0, 12/2004 Understanding the eTPU Channel Hardware by: Mike Pauwels TECD Systems Engineer This is one of a series of application notes intended to help the microcontroller systems engineer to design and


    Original     		PDF AN2933 solenoid injector AN2933 MLRB TBS-B

    BFG480W

    Abstract: 0805CS BP317
    Text: APPLICATION INFORMATION 2 GHz low noise amplifier with the BFG480W Philips Semiconductors 2 GHz low noise amplifier with the BFG480W ABSTRACT • Description of the product The BFG480W, one of the Philips double polysilicon wideband transistors of the BFG400W series.


    Original     		PDF BFG480W BFG480W, BFG400W 125006/01/pp8 BFG480W 0805CS BP317

    Untitled

    Abstract: No abstract text available
    Text: /=T S G S -1 H0M S0N ^ 7 # . » » ilL IO T M O t g i S D 1650 RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS . . • . ■ REFRACTORY/GOLD METALLIZATION DOUBLE STEP INPUT/OUTPUT MATCH 850-960 MHz CLASS AB LINEAR COMMON EMITTER P o u t = 60 W MIN. WITH 7 dB MIN GAIN


    OCR Scan     		PDF SD1650 Q070bS7

    diplexer

    Abstract: No abstract text available
    Text: /Inoren Part III Application Information and Technical Data Page Hybrid Couplers. Power Dividers. Input Match and Power Relationships 90° Hybrids For Transistor Power Amplifiers


    OCR Scan     		PDF