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    DQ123 Price and Stock

    Eaton Bussmann SDQ12-3R3-R

    INDUCT ARRAY 2 COIL 3.61UH SMD
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    DigiKey SDQ12-3R3-R Reel 3,800
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    Sager SDQ12-3R3-R 3,800
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    Eaton Bussmann SDQ12-330-R

    INDUCT ARRAY 2 COIL 32.49UH SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SDQ12-330-R Reel 3,800
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    Sager SDQ12-330-R 3,800
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    Eaton Corporation SDQ12-3R3-R

    Inductor, Coupled, 3.3 uH, 152.7 Milliohm, 1.28 A, 5.2mm x 5.2mm x 1.2mm - Tape and Reel (Alt: SDQ12-3R3-R)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SDQ12-3R3-R Reel 12 Weeks 3,800
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    Mouser Electronics SDQ12-3R3-R
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    Richardson RFPD SDQ12-3R3-R 3,800
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    Avnet Abacus SDQ12-3R3-R Reel 16 Weeks 3,800
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    Eaton Corporation SDQ12-330-R

    Inductor, Coupled, 33 uH, 1.29 Ohm, 439 mA, 5.2mm x 5.2mm x 1.2mm - Tape and Reel (Alt: SDQ12-330-R)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SDQ12-330-R Reel 12 Weeks 3,800
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    Mouser Electronics SDQ12-330-R
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    Richardson RFPD SDQ12-330-R 3,800
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    Avnet Abacus SDQ12-330-R Reel 16 Weeks 3,800
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    SMC Corporation of America JCDQ12-30-M9PV

    CYLINDER, COMPACT GLOBAL, DBL ACT, SGL ROD, JCQ SERIES | SMC Corporation JCDQ12-30-M9PV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS JCDQ12-30-M9PV Bulk 5 Weeks 1
    • 1 $192.15
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    Get Quote

    DQ123 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    DQ111

    Abstract: DQ139 DQ131
    Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply


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    UGSN7004A8HHF-256 2000mil) 256MB 256MB 200pin 128MB 200-Pin DIMM25 DQ120 DQ121 DQ111 DQ139 DQ131 PDF

    MT29F8G08ABABA

    Abstract: MT29F8G08ABABAWP MT29F8G08aba MT29F8G08A MT29F8G08ab 29f8g08 Micron NAND flash M61A 8gb FLASH DRIVE 00H-31H
    Text: Micron Confidential and Proprietary 8Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F8G08ABABA, MT29F8G08ABCBB Features • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status


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    MT29F8G08ABABA, MT29F8G08ABCBB 09005aef8386131b MT29F8G08ABABA MT29F8G08ABABAWP MT29F8G08aba MT29F8G08A MT29F8G08ab 29f8g08 Micron NAND flash M61A 8gb FLASH DRIVE 00H-31H PDF

    DQ111

    Abstract: No abstract text available
    Text: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: [email protected]


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    SM544083U74S6UU 128MByte 4Mx16 DQ111 PDF

    Untitled

    Abstract: No abstract text available
    Text: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,


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    SM544028002BXGU 32MByte 32-megabyte 100-pin, 72-bit 70/80ns PDF

    BA5 marking

    Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
    Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package


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    HMD4M144D9WG 64Mbyte 4Mx144) 200-pin HMD4M144D9WG 144bit 4Mx16bit 50-pin 16bit BA5 marking DQ112-127 BA7 marking DQ113 BA6 marking BA6137 DQ99 PDF

    DQ124

    Abstract: DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79
    Text: UG016E14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits EDO MODE DRAM MODULE EDO Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)


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    UG016E14488HSG 200-Pin 256MB 2560mil) DQ124 DQ77 DQ100 DQ99 DQ87 DQ88 DQ111 DQ106 DQ72 DQ79 PDF

    DQ112

    Abstract: UG016C14488HSG-6 DQ100 DQ88
    Text: UG016C14488HSG Data sheets can be downloaded at www.unigen.com 256M Bytes 16M x 144 bits FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 36 pcs 8M x 8 DRAM with LVTTL, 8K Refresh PIN ASSIGNMENT (Front View) 200-Pin DIMM FEATURES 256MB (16 Meg x 144)


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    UG016C14488HSG 200-Pin 256MB 2560mil) DQ112 UG016C14488HSG-6 DQ100 DQ88 PDF

    vlga

    Abstract: MT29F64G08 256Gb NAND
    Text: Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08ABAAA, MT29F64G08AFAAA, MT29F128G08A[J/K/M]AAA MT29F256G08AUAAA, MT29F32G08ABCAB, MT29F64G08AECAB MT29F128G08A[K/M]CAB, MT29F256G08AUCAB


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    128Gb, 256Gb MT29F32G08ABAAA, MT29F64G08AFAAA, MT29F128G08A MT29F256G08AUAAA, MT29F32G08ABCAB, MT29F64G08AECAB MT29F256G08AUCAB vlga MT29F64G08 256Gb NAND PDF

    Untitled

    Abstract: No abstract text available
    Text: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8


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    UG08E14488HSG-6 200Pin U08E14488HSG-6 400mil 16bit 240mil 2000mil) PDF

    MT29F16G08ABACA

    Abstract: MT29F16G08ABACAWP 64gb NAND chip MT29F32G08afacawp MT29F32G08AFACA MT29F64G08 M72A micron nand flash chip 16gb MT29F16G08ABCCBH1-10ITZ:C TR MT29F16G08AB
    Text: Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB Features • Data strobe DQS signals provide a hardware method for synchronizing data DQ in the synchronous


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    MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB 09005aef844588dc MT29F16G08ABACA MT29F16G08ABACAWP 64gb NAND chip MT29F32G08afacawp MT29F64G08 M72A micron nand flash chip 16gb MT29F16G08ABCCBH1-10ITZ:C TR MT29F16G08AB PDF

    MT29F16G08ABACA

    Abstract: MT29F32G08afacawp JESD47 compliant MT29F32G08AFACA MT29F16G08Abacawp MT29F32G08A MT29F64G08A MT29F64G08 DR10H NAND Flash DIE
    Text: Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB Features • Data strobe DQS signals provide a hardware method for synchronizing data DQ in the synchronous


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    MT29F16G08ABACA, MT29F32G08AFACA MT29F16G08ABCCB, MT29F32G08AECCB, MT29F64G08AKCCB 09005aef844588dc MT29F16G08ABACA MT29F32G08afacawp JESD47 compliant MT29F16G08Abacawp MT29F32G08A MT29F64G08A MT29F64G08 DR10H NAND Flash DIE PDF

    29f32g08

    Abstract: MT29F64G08C MT29F32G08CBABA MT29F128G08C MT29F32G08C MT29F256G08 MT29F32G08CBABAWP MT29F32G08CB 29F32G mt29f32g08cba
    Text: Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08CBABA, MT29F64G08C[E/F]ABA, MT29F128G08C[J/K/M]ABA, MT29F256G08CUABA, MT29F32G08CBABB, MT29F32G08CBCBB, MT29F64G08CFABB, MT29F64G08CECBB, MT29F128G08CJABB,


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    128Gb, 256Gb MT29F32G08CBABA, MT29F64G08C MT29F128G08C MT29F256G08CUABA, MT29F32G08CBABB, MT29F32G08CBCBB, MT29F64G08CFABB, MT29F64G08CECBB, 29f32g08 MT29F32G08CBABA MT29F32G08C MT29F256G08 MT29F32G08CBABAWP MT29F32G08CB 29F32G mt29f32g08cba PDF

    Untitled

    Abstract: No abstract text available
    Text: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8


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    UG016C14488HSG-6 200Pin U016C14488HSG-6 400mil 20bit 240mil 2560mil) PDF

    mt29f128g08

    Abstract: MT29F256G08 MT29F64G08 MT29F64G08AE MT29F32G08 MT29F128G MT29F256G08A MT29F128G08AM MT29F256G MT29F128
    Text: Micron Confidential and Proprietary 32Gb, 64Gb, 128Gb, 256Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F32G08ABAAA, MT29F64G08AFAAA, MT29F128G08A[J/K/M]AAA MT29F256G08AUAAA, MT29F32G08ABCAB, MT29F64G08AECAB MT29F128G08A[K/M]CAB, MT29F256G08AUCAB


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    128Gb, 256Gb MT29F32G08ABAAA, MT29F64G08AFAAA, MT29F128G08A MT29F256G08AUAAA, MT29F32G08ABCAB, MT29F64G08AECAB MT29F256G08AUCAB mt29f128g08 MT29F256G08 MT29F64G08 MT29F64G08AE MT29F32G08 MT29F128G MT29F256G08A MT29F128G08AM MT29F256G MT29F128 PDF

    MT18DT8144G

    Abstract: No abstract text available
    Text: 8 MEG x 144 BUFFERED DRAM DIMM DRAM MODULE MT18DT8144G For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT • • • • • • • 200-pin, dual in-line memory module DIMM


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    200-pin, 128MB 192-cycle MT18DT8144G DQ995 MT18DT8144G PDF

    smart modular

    Abstract: SMART Modular Technologies SM51441000-7 SM51441000-8
    Text: SM51441000 August 1994 Rev 1 SMART Modular Technologies SM51441000 16MByte 1M x 144 CMOS DRAM Module General Description Features The SM51441000 is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line


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    SM51441000 16MByte SM51441000 16-megabyte 100-pin, 72-bit 70/80ns 20/18W smart modular SMART Modular Technologies SM51441000-7 SM51441000-8 PDF

    MT29F32G08

    Abstract: MT29F64G08 MT29F32G08A MT29F16G08ABABA MT29F16G08ABABAWP MT29F128G08A MT29F64G08A mt29f128g08 MT29F16G08ABA MT29F16G08A
    Text: Micron Confidential and Proprietary 16Gb, 32Gb, 64Gb, 128Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F16G08ABABA, MT29F32G08AFABA, MT29F64G08A[J/K/M]ABA, MT29F128G08AUABA, MT29F16G08ABCBB, MT29F32G08AECBB, MT29F64G08A[K/M]CBB, MT29F128G08AUCBB


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    128Gb MT29F16G08ABABA, MT29F32G08AFABA, MT29F64G08A MT29F128G08AUABA, MT29F16G08ABCBB, MT29F32G08AECBB, MT29F128G08AUCBB 128Gb: MT29F32G08 MT29F64G08 MT29F32G08A MT29F16G08ABABA MT29F16G08ABABAWP MT29F128G08A mt29f128g08 MT29F16G08ABA MT29F16G08A PDF

    MT29F8G08aba

    Abstract: MT29F8G08A MT29F8G08ABABAWP MT29F8G08ABABA MT29F8G08ABAB MT29F8G08ab MT29F8G08ABCBB 29f8g08 MT29F8G08ABCBBH1 MT29F8G08ABABAW
    Text: Micron Confidential and Proprietary 8Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F8G08ABABA, MT29F8G08ABCBB • Operation status byte provides software method for detecting – Operation completion – Pass/fail condition – Write-protect status


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    MT29F8G08ABABA, MT29F8G08ABCBB 09005aef8386131b MT29F8G08aba MT29F8G08A MT29F8G08ABABAWP MT29F8G08ABABA MT29F8G08ABAB MT29F8G08ab 29f8g08 MT29F8G08ABCBBH1 MT29F8G08ABABAW PDF

    MT29F64G08

    Abstract: MT29F256G08 mt29f128g08 29F64G08 MT29F64G08CBAA MT29F64G08CB MT29F128 MT29F128G08CFAAB MT29F64G08cba MT29F64G
    Text: Micron Confidential and Proprietary 64Gb, 128Gb, 256Gb, 512Gb Asynchronous/Synchronous NAND Features NAND Flash Memory MT29F64G08CBAA[A/B], MT29F128G08C[E/F]AAA, MT29F128G08CFAAB, MT29F256G08C[J/K/M]AAA, MT29F256G08CJAAB, MT29F512G08CUAAA, MT29F64G08CBCAB, MT29F128G08CECAB, MT29F256G08C[K/M]CAB,


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    128Gb, 256Gb, 512Gb MT29F64G08CBAA MT29F128G08C MT29F128G08CFAAB, MT29F256G08C MT29F256G08CJAAB, MT29F512G08CUAAA, MT29F64G08CBCAB, MT29F64G08 MT29F256G08 mt29f128g08 29F64G08 MT29F64G08CB MT29F128 MT29F128G08CFAAB MT29F64G08cba MT29F64G PDF

    RCV57

    Abstract: No abstract text available
    Text: HITACHI/ OPTOELECTRONICS i44cìb2QS DQ123S7 7bl « H I T M . ' HrTACHi blE » SDH/SONET O C -12 Lightwave Receiver RCV5702AN Features • • Complied with S O N E T /S D H standard • • InGaAs APD Operation at 622.08M b /s for 1.3^im or • 1.55|im wavelength


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    DQ123S7 RCV5702AN 50-ohm RCV57 PDF

    Unitrode Semiconductor

    Abstract: No abstract text available
    Text: MICROSEMI CORP/ lilATERTOlilN SDE =1347^3 DG12304 4T1 • U N I T D RECTIFIER ASSEMBLIES US12-US200A USR12-U£R1SQA_ - High Voltage Stacks, .125 Amp to lAm p, Standard and Fast Recovery FEATURES • C ontrolled A valan ch e C h a ra c te ristics • Recovery Tim es: to 500ns


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    DG12304 US12-US200A USR12-U 500ns Unitrode Semiconductor PDF

    L64853

    Abstract: Emulex 1012207 Emulex Corporation scsi Emulex Corporation D012P Emulex scsi processor l64853aqc L64853A ESP100
    Text: LSI LOGIC L64853A E nhanced SBus DMA Controller Technical M anual S3 0 4 S 0 4 DD1 2 B7 S 33^ « L L C Second Edition Document Number M S71-000104-99 B This document applies to revision A of the L64853A Enhanced SBus DMA Controller and to all subsequent versions unless otherwise indicated in a sub­


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    L64853A S304S04 MS71-000104-99 D-102 00123b3 G-812 L64853 Emulex 1012207 Emulex Corporation scsi Emulex Corporation D012P Emulex scsi processor l64853aqc ESP100 PDF

    WEDSP32C

    Abstract: No abstract text available
    Text: — * Microelectronics WE DSP32C Digital Signal Processor Introduction Description AT&T is the industry leader in floating-point digital signal processing. AT&T's DSP32 architecture was introduced in 1985 and is now the accepted standard in the speech, signal processing,


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    DSP32C DSP32 32bit, DSP32, DS91-051D 005002b WEDSP32C PDF

    Untitled

    Abstract: No abstract text available
    Text: MT9075 E1 Single Chip Transceiver Preliminary Information Features • • • • • • • Ordering Information MT9075AP 68Pin PLCC MT9075AL 100 Pin MQFP -40°C to 85°C Description The MT9075 is a single chip device which integrates an advanced PCM 30 framer with a Line Interface


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    MT9075 MT9075AP 68Pin MT9075AL MT9075 b2L4T37G PDF