71WS256NC0BAIAU
Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
54MHz
S71WS
S71WS512/256Nx0
S71WS512Nx0/S71WS256Nx0
71WS256NC0BAIAU
cosmoram synchronous
S71WS256NC0
S71WS256ND0
S71WS512ND0
TSD084
S71WS512NC0BFIAZ
SA002
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S29WS256N
Abstract: S71WS512NE0BFWZZ
Text: S71WS512NE0BFWZZ Stacked Multi-Chip Product MCP Flash Memory and pSRAM CMOS 1.8 Volt, Simultaneous Operation, Burst Mode Flash Memory and Pseudo-Static RAM ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION MCP Features The S71WS512 Series is a product line of stacked Multi-Chip
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S71WS512NE0BFWZZ
S71WS512
S29WS256N
54MHz
128Mb
96-ball
S71WS512NE0BFWZZ
S29WS256N
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Untitled
Abstract: No abstract text available
Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static
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S71PL254/127/064/032J
256M/128/64/32
16/8/4/2M
16-bit)
4M/2M/1M/512K/256K
S71PL
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TLA064
Abstract: S71PL129JC0 S29PL129J S71PL129JA0 S71PL129JB0
Text: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION
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S71PL129JC0/S71PL129JB0/S71PL129JA0
16-bit)
S71PL129Jxx
TLA064
S71PL129JC0
S29PL129J
S71PL129JA0
S71PL129JB0
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COSMO MARKING
Abstract: S71WS128JB0 S71WS128JC0 S71WS256JC0 WS128J cosmo MARKING CODE COSMO DEVICE MARKING COSMO DEVICE MARKING DATE cosmoram synchronous
Text: S71WSxxxJ based MCPs Stacked Multi-Chip Product MCP 128/64 Megabit (8M/4M x 16-bit) CMOS 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash Memory with CosmoRAM ADVANCE DATASHEET Distinctive Characteristics MCP Features Power supply voltage of 1.7 to 1.95V
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S71WSxxxJ
16-bit)
80-ball
66MHz
S71WS
S71WS256/128/064J
COSMO MARKING
S71WS128JB0
S71WS128JC0
S71WS256JC0
WS128J
cosmo MARKING CODE
COSMO DEVICE MARKING
COSMO DEVICE MARKING DATE
cosmoram synchronous
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S29PL127J
Abstract: S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80 MCP51
Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static
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S71PL254/127/064/032J
256M/128/64/32
16/8/4/2M
16-bit)
4M/2M/1M/512K/256K
S71PL
S29PL127J
S71PL032J40
S71PL032J80
S71PL032JA0
S71PL064J80
MCP51
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MB82DBS04163C
Abstract: MB82DBS04163C-70L
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2.0E MEMORY Mobile FCRAMTM CMOS 64M Bit 4M word x 16 bit Mobile Phone Application Specific Memory MB82DBS04163C-70L CMOS 4,194,304-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface Programmable Page Mode & Burst Mode
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MB82DBS04163C-70L
304-WORD
MB82DBS04163C
16-bit
MB82DBS04163C-70L
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MB82D01181E
Abstract: MB82D01181E-60L
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2.0E MEMORY Mobile FCRAMTM CMOS 16M Bit 1 M word x 16 bit Mobile Phone Application Specific Memory MB82D01181E-60L CMOS 1,048,576-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface n DESCRIPTION
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MB82D01181E-60L
576-WORD
MB82D01181E
16-bit
MB82D01181E-60L
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MB82DS01181E
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE3.0E MEMORY Mobile FCRAMTM CMOS 16M Bit 1 M word x 16 bit Mobile Phone Application Specific Memory MB82DS01181E-70L-A CMOS 1,048,576-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface DESCRIPTION
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MB82DS01181E-70L-A
576-WORD
MB82DS01181E
16-bit
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Mcp90
Abstract: MCP78 032J mcp68
Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 128/64/32 Megabit (8/4/2 M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM
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S71PL254/127/064/032J
16-bit)
4M/2M/1M/512K/256K
S71PL
S29PL
Mcp90
MCP78
032J
mcp68
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S29PL129J
Abstract: S71PL129JA0 S71PL129JB0 S71PL129JC0
Text: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION
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S71PL129JC0/S71PL129JB0/S71PL129JA0
16-bit)
S71PL129J
S29PL129J
S71PL129Jxx
S71PL129JA0
S71PL129JB0
S71PL129JC0
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SPANSION gl512
Abstract: GL512 S29GL256N 32mb GL512N TLD084 S71GL128NB0 S71GL256NB0 S71GL512NB0 S29GLxxxN GL128n
Text: S71GL512NB0/S71GL256NB0/ S71GL128NB0 Stacked Multi-chip Product MCP 512/256/128 Megabit (32/16/8 M x 16-bit) CMOS 3.0 Volt-only MirrorBitTM Page-mode Flash Memory with 32 Megabit (2M x 16-bit) pSRAM ADVANCE INFORMATION Distinctive Characteristics MCP Features
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S71GL512NB0/S71GL256NB0/
S71GL128NB0
16-bit)
S71GL128N,
S71GL256N)
S71GL512N)
TLD084)
TLA084)
SPANSION gl512
GL512
S29GL256N 32mb
GL512N
TLD084
S71GL128NB0
S71GL256NB0
S71GL512NB0
S29GLxxxN
GL128n
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Untitled
Abstract: No abstract text available
Text: S71PL-J Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM
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S71PL-J
256M/128/64/32
16/8/4/2M
16-bit)
4M/2M/1M/512K/256K
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Untitled
Abstract: No abstract text available
Text: MB82DBS02163C MB82DBS04163B New Products Cellular Phone Application Specific Memory 32M-bit/64M-bit Burst Mode Mobile FCRAMTM MB82DBS02163C/MB82DBS04163B FUJITSU has unveiled a new pair of enhanced 32M-bit and 64M-bit Mobile FCRAMTM devices that adopt burst mode read/write operations in compliance with
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MB82DBS02163C
MB82DBS04163B
32M-bit/64M-bit
MB82DBS02163C/MB82DBS04163B
32M-bit
64M-bit
MB82DBS04163B.
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Untitled
Abstract: No abstract text available
Text: S71PL129JC0/S71PL129JB0/ S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE Distinctive Characteristics
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S71PL129JC0/S71PL129JB0/
S71PL129JA0
16-bit)
S71PL129J
S29PL129J
S71PL129Jxx
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Untitled
Abstract: No abstract text available
Text: S71GL064A based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 64 Megabit (4 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8 Megabit (1M/512K x 16-bit) Pseudo Static RAM / Static RAM ADVANCE Distinctive Characteristics MCP Features
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S71GL064A
16-bit)
1M/512K
TLC056)
S29GL064
S71GL064A80/S71GL064A08
S71GL064AA0/S71GL064A0A
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Untitled
Abstract: No abstract text available
Text: S75WS256Nxx Based MCPs Stacked Multi-Chip Product MCP 256 Megabit (16M x 16-bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Mb (8M/4M x 16-Bit) CosmoRAM and 512 Mb ( 32M x 16-bit) Data Storage Data Sheet PRELIMINARY 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV
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S75WS256Nxx
16-bit)
S75WS-N-01
S75WS-leteness,
S75WS-N-01
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Untitled
Abstract: No abstract text available
Text: S71PL129JC0/S71PL129JB0/S71PL129JA0 Stacked Multi-Chip Product MCP Flash Memory and pSRAM 128 Megabit (8M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation, Page Mode Flash Memory with 64/32/16 Megabit (4M/2M/1M x 16-bit) Pseudo-Static RAM ADVANCE INFORMATION
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S71PL129JC0/S71PL129JB0/S71PL129JA0
16-bit)
S71PL129J
S29PL129J
S71PL129Jxx
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MB82DBS02163C
Abstract: MB82DBS02163C-70L
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE4.0E MEMORY Mobile FCRAMTM CMOS 32M Bit 2 M word x 16 bit Mobile Phone Application Specific Memory MB82DBS02163C-70L CMOS 2,097,152-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface Programmable Page Mode & Burst Mode
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MB82DBS02163C-70L
152-WORD
MB82DBS02163C
16-bit
MB82DBS02163C-70L
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fBGA package tray
Abstract: 63 ball fbga thermal resistance spansion 7149A S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80 6129A MCP51
Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 256M/128/64/32 Megabit (16/8/4/2M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static
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S71PL254/127/064/032J
256M/128/64/32
16/8/4/2M
16-bit)
4M/2M/1M/512K/256K
S71PL
fBGA package tray
63 ball fbga thermal resistance spansion
7149A
S29PL127J
S71PL032J40
S71PL032J80
S71PL032JA0
S71PL064J80
6129A
MCP51
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MCP 90
Abstract: bfw 10 transistor transistor marking A21 S71PL064 bfw resistor S29PL127J S71PL032J40 S71PL032J80 S71PL032JA0 S71PL064J80
Text: S71PL254/127/064/032J based MCPs Stacked Multi-Chip Product MCP Flash Memory and SRAM 128/64/32 Megabit (8/4/2 M x 16-bit) CMOS 3.0 Volt-only Simultaneous Operation Page Mode Flash Memory and 64/ 32/16/8/4 Megabit (4M/2M/1M/512K/256K x 16-bit) Static RAM/Pseudo Static RAM
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S71PL254/127/064/032J
16-bit)
4M/2M/1M/512K/256K
S71PL
MCP 90
bfw 10 transistor
transistor marking A21
S71PL064
bfw resistor
S29PL127J
S71PL032J40
S71PL032J80
S71PL032JA0
S71PL064J80
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spansion S29GL064
Abstract: bfw 10 transistor S29GL064 S71GL064A S71GL064A08-0B S71GL064A08-0F S71GL064A80-0K S71GL064A80-0P s29glxxxa Stacked 4MB Flash and 1MB SRAM
Text: S71GL064A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 64 Megabit (4 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8 Megabit (1M/512K x 16-bit) Pseudo Static RAM / Static RAM ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL064A
16-bit)
1M/512K
spansion S29GL064
bfw 10 transistor
S29GL064
S71GL064A08-0B
S71GL064A08-0F
S71GL064A80-0K
S71GL064A80-0P
s29glxxxa
Stacked 4MB Flash and 1MB SRAM
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71WS512ND
Abstract: No abstract text available
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) pSRAM ADVANCE INFORMATION Distinctive Characteristics
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
54MHz
S71WS
S71WS512/256Nx0
S71WS512N/256N
71WS512ND
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MB82DP04183C
Abstract: MB82DP04183C-65L
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E MEMORY Mobile FCRAMTM CMOS 64M Bit 4 M word x 16 bit Mobile Phone Application Specific Memory MB82DP04183C-65L CMOS 4,194,304-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface DESCRIPTION
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MB82DP04183C-65L
304-WORD
MB82DP04183C
16-bit
F0408
MB82DP04183C-65L
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