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Catalog Datasheet	MFG & Type	Document Tags	PDF
LDM-1A Abstract: No abstract text available Text: PRELIMINARY INFORMATION L9D382G32BG2 L9D3162G32BG2 8-16 Gb, DDR3, 128M - 256M x 32 Dual Channel Integrated Module 8-16 Gb, DDR3, 128M - 256M x 64 Single Channel Integrated Module Benefits %RDUGDUHDVDYLQJVZLWKVXUIDFH Z ZL PRXQWIULHQGO\SLWFK PP	Original	L9D382G32BG2 L9D3162G32BG2 DDR3-133 DDR3-1333 LDS-L9D3xxxG32BG2 LDS-L9D3xxG32BG2 LDM-1A	PDF
L9D3256M32DBG2 Abstract: No abstract text available Text: PRELIMINARY INFORMATION L9D3256M32DBG2 L9D3512M32DBG2 16-32 Gb, DDR3, 256-512M x 32 Dual Channel Memory Module Benefits FEATURES DDR3 Integrated Module [iMOD]: x9DD 9DD4 999 x9FHQWHUWHUPLQDWHGSXVKSXOO ,2 x3DFNDJHPP[PP[PP	Original	L9D3256M32DBG2 L9D3512M32DBG2 256-512M DDR3-1866 L9D3256M32DBG2x125 DDR3-1600 L9D3256M32DBG2x15 DDR3-1333 L9D3512M32DBG2x125 L9D3256M32DBG2	PDF
DQ25A Abstract: DQ20A DQ18A Text: SG578288FG8SZUU April 27, 2006 Ordering Information Part Numbers Description Module Speed SG578288FG8SZDG 128Mx78 80 * (1GB), DDR2, 244-pin Mini-DIMM,Unbuffered, ECC, 2-Channel (128Mx39 (40), 512MB per Channel), 64Mx8 Based, DDR2-533-444, 36.83mm, 3Ω DQ termination, Green	Original	SG578288FG8SZUU SG578288FG8SZDG 128Mx78 244-pin 128Mx39 512MB 64Mx8 DDR2-533-444, PC2-4200 SG578288FG8SZIL DQ25A DQ20A DQ18A	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY INFORMATION L9D3256M32DBG2 L9D3512M32DBG2 16-32 Gb, DDR3, 256-512M x 32 Dual Channel Memory Module Benefits FEATURES DDR3 Integrated Module [iMOD]: "‚"XDD?XDDS?3057X"/202897X1-203X ‚"3057X"egpvgt/vgtokpcvgf."rwuj1rwnn" K1Q " ‚"Rcemcig<"38oo"z"44oo"z"304oo."	Original	L9D3256M32DBG2 L9D3512M32DBG2 256-512M 3057X /202897X1-203X 304oo. 493dcnnu 3022oo LDS-L9D3xxxM32DBG2	PDF
A17A Abstract: A15A a17b diode A14A A11A A13A A14A AS9C25128M2036L AS9C25256M2036L be0b Text: September 2004 Preliminary Information AS9C25256M2036L AS9C25128M2036L 2.5V 256/128K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144/131,072 x 36[1]	Original	AS9C25256M2036L AS9C25128M2036L 256/128K 18Gbps A17A A15A a17b diode A14A A11A A13A A14A AS9C25128M2036L AS9C25256M2036L be0b	PDF
DQ20A Abstract: A17a DQ18A be2a A13B Text: July 2004 Preliminary Information AS9C25256M2036L 2.5V 256K X 36 Synchronous Dual-port SRAM with 3.3V or 2.5V interface Features • True Dual-Port memory cells that allow simultaneous access of the same memory location • Organisation: 262,144 x 36 bits	Original	AS9C25256M2036L 18Gbps 18-bit DQ20A A17a DQ18A be2a A13B	PDF
Untitled Abstract: No abstract text available Text: 1,048,576 WORD X 18 BIT DYNAMIC RAM DESCRIPTION The TC5116180AJ/AFT is the new generation dynamic RAM organized 1,048,576 word by 18 bit. The TC5116180AJ/AFT utilizes Toshiba’s CMOS silicon gate process technology as w ell as advanced circuit	OCR Scan	----------------TC5116180AJ/AFT-60/70/-80 TC5116180AJ/AFT TC5116180AJ/AFT-60/70/80	PDF