Untitled
Abstract: No abstract text available
Text: New Products MB82DPS02183B Cellular Phone Application Specific RAM TM Mobile FCRAM with High-Speed Page Mode MB82DPS02183B A further enhanced Mobile FCRAM featuring a high-speed page mode, a 1.8V power supply operation. Introduction Photo 1 External View
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MB82DPS02183B
MB82D01160
MB82D01161,
16M-bit
128Mb
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ACT-D16M96S
Abstract: BSA1 BS-B1
Text: Standard Products ACT-D16M96S High Speed 16MegaBit x 96 3.3V Synchronous DRAM Multichip Module May 29, 2007 FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Six 6 low power 4M x 16 x 4 banks Synchronous Dynamic Random Access Memory chips in one MCM
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ACT-D16M96S
16MegaBit
50-MHz
192-cycle
SCD3370
BSA1
BS-B1
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F0110
Abstract: 004C2000
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE5.0E MEMORY Mobile FCRAM CMOS 16M Bit 1M word x 16 bit Mobile Phone Application Specific Memory MB82D01161-85/-85L/-90/90L CMOS 1,048,576-WORD x 16 BIT Fast Cycle Random Access Memory with Low Power SRAM Interface •
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MB82D01161-85/-85L/-90/90L
576-WORD
MB82D01161
16-bit
16bit
90nany
F0110
F0110
004C2000
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PDF
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EDI4164MEV50SM
Abstract: EDI4164MEV-RP EDI4164MEV60SM EDI4164MEV70SM 4mx16 edo EDI4164MEV50SI
Text: EDI4164MEV-RP HI-RELIABILITY PRODUCT 4Mx16 EDO Extended Data Out Dynamic RAM 3.3V FEATURES • 4 Meg x 16 bit CMOS Dynamic RAM ■ RAS - Only, CAS-before-RAS, and HIDDEN refresh capability ■ Package: ■ Low Operating Power Dissipation ■ Access Time: 50, 60 and 70ns
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EDI4164MEV-RP
4Mx16
EDI4164MEV50SM
EDI4164MEV60SM
EDI4164MEV70SM
EDI4164MEV50SI
EDI4164MEV60SI
EDI4164MEV70SI
EDI4164MEV50SM
EDI4164MEV-RP
EDI4164MEV60SM
EDI4164MEV70SM
4mx16 edo
EDI4164MEV50SI
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PDF
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71WS256NC0BAIAU
Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
54MHz
S71WS
S71WS512/256Nx0
S71WS512Nx0/S71WS256Nx0
71WS256NC0BAIAU
cosmoram synchronous
S71WS256NC0
S71WS256ND0
S71WS512ND0
TSD084
S71WS512NC0BFIAZ
SA002
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PDF
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256mb ddr333 200 pin
Abstract: A11 MARKING CODE mark DM 8M16 DDR200 DDR266 DDR333 MT46V16M8 MT46V32M4 MT46V8M16
Text: PRELIMINARY‡ 128Mb: x4, x8, x16 DDR333 SDRAM Addendum MT46V32M4 – 8 Meg x 4 x 4 banks MT46V16M8 – 4 Meg x 8 x 4 banks MT46V8M16 – 2 Meg x 16 x 4 banks DOUBLE DATA RATE DDR SDRAM For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds
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128Mb:
DDR333
MT46V32M4
MT46V16M8
MT46V8M16
256Mb:
256mb ddr333 200 pin
A11 MARKING CODE
mark DM
8M16
DDR200
DDR266
MT46V16M8
MT46V32M4
MT46V8M16
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Untitled
Abstract: No abstract text available
Text: UG34C322 4 4GTG 16M Bytes (4M x 32) DRAM 72Pin SODIMM based on 4M X 4 Features General Description The UG34C322(4)4GTG is a 4,149,304 bits by 32 SODIMM module.The UG34C322(4)4GTG is assembled using 8 pcs of 4M x 4 2K/4K refresh DRAMs in 24-pin TSOP package mounted on a 72pin printed circuit board.
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UG34C322
72Pin
24-pin
72pin)
1000mil)
Re-Tek-265
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Untitled
Abstract: No abstract text available
Text: WEDPY256K72V-XBX 256Kx72 Synchronous Pipeline SRAM FEATURES DESCRIPTION Fast clock speed: 100, 133, 150, 166 and 200* MHz The WEDPY256K72V-XBX employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. The 16Mb Synchronous SRAMs integrate two 256K x 36 SRAMs
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WEDPY256K72V-XBX
256Kx72
WEDPY256K72V-XBX
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Untitled
Abstract: No abstract text available
Text: WED9LC6816V 256Kx32 SSRAM/4Mx32 SDRAM – External Memory Solution for Texas Instruments TMS320C6000 DSP FEATURES DESCRIPTION Clock speeds: The WED9LC6816V is a 3.3V, 256K x 32 Synchronous Pipeline SRAM and a 4Mx32 Synchronous DRAM array constructed with
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WED9LC6816V
256Kx32
SSRAM/4Mx32
TMS320C6000
WED9LC6816V
4Mx32
4Mx16
TMS320C6201
TMS320C6201
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PDF
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DQ111
Abstract: DQ139 DQ131
Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply
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UGSN7004A8HHF-256
2000mil)
256MB
256MB
200pin
128MB
200-Pin
DIMM25
DQ120
DQ121
DQ111
DQ139
DQ131
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PDF
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Untitled
Abstract: No abstract text available
Text: IS61NF12832 IS61NF12836 IS61NF25618 IS61NLF12832 IS61NLF12836 IS61NLF25618 128K x 32, 128K x 36 and 256K x 18 FLOW-THROUGH 'NO WAIT' STATE BUS SRAM ISSI PRELIMINARY INFORMATION MAY 2002 FEATURES DESCRIPTION • • • • • • The 4 Meg 'NF' product family feature high-speed,
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IS61NF12832
IS61NF12836
IS61NF25618
IS61NLF12832
IS61NLF12836
IS61NLF25618
Ind10TQI
IS61NLF25618-10TQI
128Kx32
IS61NLF12832-9TQ
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PDF
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DQ111
Abstract: No abstract text available
Text: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: [email protected]
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SM544083U74S6UU
128MByte
4Mx16
DQ111
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Untitled
Abstract: No abstract text available
Text: STI368003 72-PIN SIMMS 8M X 36 BITS DRAM SIMM Memory Module FEATURES • GENERAL DESCRIPTION Performance range: ^RAC ^CAC ^RC STI368003-60 60ns 15ns 110ns STI368003-70 70ns 20ns 130ns • Fast Page Mode operation • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability
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STI368003
STI368003-60
STI368003-70
110ns
130ns
72-PIN
STI368003
24pin
28-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: STI721005D1 -xxVG 168-PIN DIMMS 1M X 72 Bit DRAM DIMM with FPM and ECC Optimized FEATURES • GENERAL DESCRIPTION Performance range: *RAC ^CAC *RC *PC STI.-60VG 60ns 20ns 110ns 40ns STI.-70VG 70ns 25ns 130ns 45ns The Simple Technology STI721005D1-xxVG is a 1M x 72 bit
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STI721005D1
168-PIN
-60VG
-70VG
110ns
130ns
STI721005D1-xxVG
44-pin
20-pin
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PDF
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HYM536100M
Abstract: No abstract text available
Text: 'HYUNDAI SEMICONDUCTOR HYM536100 Series 1M x 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536100 Is a 1M x 36-bit Fast page mode CMOS ORAM module consisting of eight HY514400 and four HY531000 in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22fiF decoupling capacitor is mounted
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HYM536100
36-bit
HY514400
HY531000
22fiF
HYM536100M
HYM536100MG
1CC02-10-MAY93
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM041841RLAA IBM043641RLAA Preliminary 128K X 36 & 256K X 18 SRAM Features • 128K x 36 or 256K x 18 Organizations • Registered Outputs • CMOS Technolgy • Asynchronous Output Enable and Power Down Inputs • Synchronous Pipeline Mode Of Operation with
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IBM041841RLAA
IBM043641RLAA
GA14-4667-01
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI H Y 6 7 V 1 8 1 0 0 /1 0 1 64K X 18 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64K x18 SRAM core, address registers, data input registers, a 2-bit burst ad dress counter and pipelined output. All synchronous inputs pass through registers controlled by a positiveedge triggered clock K .
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486/Pentium
7ns/12ns/17ns
67MHz
486/Pent
00DbSS3
1DH02-22-MAY95
HY67V18100/101
HY67V18100C
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PDF
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Untitled
Abstract: No abstract text available
Text: December 1993 Edition 1.0 FUpSU DATA SHEET M B 9 8 B 7 5 14-80 DRAM MEMORY CARD DYNAMIC RANDOM ACCESS MEMORY CARD 4M x 18 bits / 2M x 36 bits The Fujitsu MB98B7514 is a Dynamic Random Access Memory DRAM card consisting of sixteen MB814400AL devices and eight MB81C1000AL devices.
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MB98B7514
MB814400AL
MB81C1000AL
88-pin
18-bit
36-bit
MB98B7514-80
CRD-88P-M01)
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PDF
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Untitled
Abstract: No abstract text available
Text: Septem ber 1992 Edition 1.0 FUjlTSU DATA S H E E T MB85346A-60/-70/-80 CMOS 1 M X 36 Fast Page Mode DRAM Module CMOS 1,024,576 x 36 Bit Fast Page Mode DRAM Module The Fujitsu MB85346A is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB814400A devices and four MB81C1000A
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MB85346A-60/-70/-80
MB85346A
MB814400A
MB81C1000A
72-pad
MSS-72P-P11
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PDF
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MB85323A-70
Abstract: No abstract text available
Text: September 1993 Edition 1.0 FUJITSU DATA SHEET MB85323A-60/-70/-80 CMOS 1 M x 36 Fast Page Mode DRAM Module CMOS 1,024,576 x 36 Bit Fast Page Mode DRAM Module «ft* * * 11 The Fujitsu MB85323A is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB814400A devices and four MB81C1000A
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MB85323A-60/-70/-80
MB85323A
MB814400A
MB81C1000A
a72-pad
MSS-72P-P37
MB85323A-70
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PDF
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GS840NBT36PT
Abstract: R33V TI r33v
Text: Preliminary - April 1998 ¡tl TUUNOIOCV 2.5V or 3.3V I/O 143/133/117/100 GS840NBT36PT F eatures 3.3V +\Q%/-5% Core power supply, 2.5V or 3.3V I/O supply Output registers are provided and are controlled by FT mode pin. With FT mode pin, output registers can be programmed in either
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GS840NBT36PT
10S3D4S
GS840NBT36PT
R33V TI
r33v
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PDF
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ite 8892
Abstract: MB8532 MB85323A-70
Text: September 1993 Edition 2.0 FUJITSU DATA SHEET'- M B 85323A -60/-70/-80 CMOS 1Mx 36 Fast Page Mode DRAM Module CMOS 1,024,576 x 32 Bit Fast Page Mode DRAM Module The Fujitsu MB85323-A is a fully decoded, CMOS dynamic random access memory DRAM module consisting of eight MB814400A devices and four
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OCR Scan
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5323A
MB85323-A
MB814400A
MB81C1000A
MB85323A
72-pad
MSS-72P-P37
ite 8892
MB8532
MB85323A-70
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PDF
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junction temperature v850
Abstract: No abstract text available
Text: Preliminary - April 1998 ¡il T t d l N O L O C V 2.5V or 3.3V I/O 117/100/90/50 GS840NBT18FT F eatures Output registers are provided and are controlled by FT mode pin. With FT mode pin, output registers can be programmed in either pipeline mode for very high frequency operation (117MHz or
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100-lead
junction temperature v850
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PDF
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Untitled
Abstract: No abstract text available
Text: ¡il TU4IHDLDCV GS82032Q/T 138/133/117/100/66,3.3V gs82032Q r C A li V U H H \ À 0 0 O fc P U l O l Features • • • • • • • • • • Single 3.3V +10%/-5% power supply High frequency operation: 138MHz Fast access time: 4ns Clock to Q FT mode pin for either flow-thru or pipeline operation
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gs82032Q
80-138MHz
66MHzfFH
GS82032Q/T
138MHz
GS82032
64Kx32
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