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    DRAM 4M X 8 Search Results

    DRAM 4M X 8 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    UPD48011318FF-FH16-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation

    DRAM 4M X 8 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    A43L4616

    Abstract: RA12
    Text: A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 History Issue Date Initial issue September, 2004 September, 2004, Version 0.0 Remark AMIC Technology, Corp. A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM


    Original     		A43L4616 143MHz 133Mhz A43L4616 RA12 PDF

    Untitled

    Abstract: No abstract text available
    Text: A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM Document Title 4M X 16 Bit X 4 Banks Synchronous DRAM Revision History Rev. No. 0.0 History Issue Date Initial issue September, 2004 September, 2004, Version 0.0 Remark AMIC Technology, Corp. A43L4616 4M X 16 Bit X 4 Banks Synchronous DRAM


    Original     		A43L4616 143MHz PDF

    hynix HY57V28820HCT-H

    Abstract: No abstract text available
    Text: HY57V28820HC L T 4Banks x 4M x 8bits Synchronous DRAM 0.1 : Hynix Change 0.2 : Burst read single write mode correction Rev. 0.2 / Aug. 2001 1 HY57V28820HC(L)T 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory


    Original     		HY57V28820HC 728bit 304x8. 400mil 54pin hynix HY57V28820HCT-H PDF

    K4S280832D

    Abstract: No abstract text available
    Text: K4S280832D CMOS SDRAM 128Mbit DRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Rev. 0.0 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2001 K4S280832D CMOS DRAM 4M x 8Bit x 4 Banks Synchronous DRAM


    Original     		K4S280832D 128Mbit K4S280832D A10/AP PDF

    K4S280832M

    Abstract: No abstract text available
    Text: K4S280832M CMOS SDRAM 128Mbit DRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280832M CMOS DRAM 4M x 8Bit x 4 Banks Synchronous DRAM


    Original     		K4S280832M 128Mbit K4S280832M A10/AP PDF

    K4S280832B

    Abstract: No abstract text available
    Text: K4S280832B CMOS SDRAM 128Mbit DRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280832B CMOS DRAM 4M x 8Bit x 4 Banks Synchronous DRAM


    Original     		K4S280832B 128Mbit K4S280832B A10/AP PDF

    TAPC640

    Abstract: WED9LAPC2B16P8BC WED9LAPC2C16V4BC b-cas 153 tss
    Text: White Electronic Designs WED9LAPC2B16P8BC 4M x 32 SDRAM / 2M x 8 SDRAM EXTERNAL MEMORY SOLUTION FOR AGERE’S TAPC640 ATM PORT CONTROLLER FEATURES DESCRIPTION Clock speeds: The WED9LAPC2B16P8BC is a 3.3V, 4M x 32 Synchronous DRAM and a 2M x 8 Synchronous DRAM array packaged


    Original     		WED9LAPC2B16P8BC TAPC640 WED9LAPC2B16P8BC WED9LAPC2C16V4BC, WED9LAPC2C16P8BC WED9LAPC2C16P8BI WED9LAPC2C16V4BC b-cas 153 tss PDF

    K4S280832A

    Abstract: No abstract text available
    Text: K4S280832A CMOS SDRAM 128Mbit DRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Aug. 1999 K4S280832A CMOS DRAM 4M x 8Bit x 4 Banks Synchronous DRAM


    Original     		K4S280832A 128Mbit K4S280832A A10/AP PDF

    A43L4616AV-7F

    Abstract: No abstract text available
    Text: A43L4616A/A43L5608A 4M X 16 Bit X 4 Banks, 8M X 8 Bit X 4 Banks Synchronous DRAM Preliminary Document Title 4M X 16 Bit X 4 Banks, 8M X 8 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue April 18, 2008 Preliminary


    Original     		A43L4616A/A43L5608A 133MHz 100MHz A43L4616AV-7F PDF

    A43L4616AV

    Abstract: No abstract text available
    Text: A43L4616A/A43L5608A 4M X 16 Bit X 4 Banks, 8M X 8 Bit X 4 Banks Synchronous DRAM Preliminary Document Title 4M X 16 Bit X 4 Banks, 8M X 8 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue April 18, 2008 Preliminary


    Original     		A43L4616A/A43L5608A A43L4616AV PDF

    Untitled

    Abstract: No abstract text available
    Text: VM43217400D,VM83217400D 4M,8M x 32 - Bit Dynamic RAM Module VIS Description The VM43217400D and VM83217400D are 4M x 32-bit and 8M x 32-bit dynamic RAM modules. It is mounted by 8/16 pieces of 4M x 4 DRAM VG2617400D and each in a standard 24/26 pin plastic SOJ packages. Decoupling capacitors are mounted adjacent to each DRAM


    Original     		VM43217400D VM83217400D 32-bit VG2617400D) VM43217400D 50/60ns 1G5-0132 PDF

    Untitled

    Abstract: No abstract text available
    Text: WED9LAPC2B16P8BC 4M x 32 SDRAM / 2M x 8 SDRAM External Memory Solution for Lucent’s LUCTAPC640 ATM Port Controller FEATURES DESCRIPTION • Clock speeds: • SDRAM: 100 MHz The WED9LAPC2B16P8BC is a 3.3V, 4M x 32 Synchronous DRAM and a 2M x 8 Synchronous DRAM array packaged in a


    Original     		WED9LAPC2B16P8BC LUCTAPC640 WED9LAPC2B16P8BC WED9LAPC2B16P8BI PDF

    K4S640432C

    Abstract: No abstract text available
    Text: K4S640432C CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Jun. 1999 K4S640432C CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM


    Original     		K4S640432C 64Mbit A10/AP K4S640432C PDF

    Untitled

    Abstract: No abstract text available
    Text: K4S640432E CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Oct. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.0 Oct. 2000 K4S640432E CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM


    Original     		K4S640432E 64Mbit A10/AP PDF

    K4S640432D

    Abstract: No abstract text available
    Text: K4S640432D CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 June 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Jun. 1999 K4S640432D CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM


    Original     		K4S640432D 64Mbit 64mactive A10/AP K4S640432D PDF

    Untitled

    Abstract: No abstract text available
    Text: K4S640432E CMOS SDRAM 64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept. 2001 K4S640432E CMOS SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM


    Original     		K4S640432E 64Mbit 64active A10/AP PDF

    K4S561632A

    Abstract: No abstract text available
    Text: K4S561632A CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Sep. 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Sep. 1999 K4S561632A CMOS SDRAM 4M x 16Bit x 4 Banks Synchronous DRAM


    Original     		K4S561632A 256Mbit 16bit K4S561632A A10/AP PDF

    KMM5324100V

    Abstract: No abstract text available
    Text: KMM53241OOV/VG/VP DRAM MODULES 4M X 32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5324100V is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5324100V consist of eight C M O S 4M x 4 bit


    OCR Scan     		KMM53241OOV/VG/VP 110ns 130ns 150ns KMM5324100V 24-pin 72-pin 22/iF PDF

    M404A

    Abstract: No abstract text available
    Text: V7SH VM43217400D.VM83217400D 4M,8Mx32-Bit Dynamic RAM Module Description The VM43217400D and VM83217400D are 4M x 32-bit and 8M x 32-bit dynamic RAM modules. It is mounted by 8/16 pieces of 4M x 4 DRAM VG2617400D and each in a standard 24/26 pin plastic SOJ packages. Decoupling capacitors are mounted adjacent to each DRAM


    OCR Scan     		VM43217400D 50/60ns VM43217400D VM83217400D 8Mx32-Bit 32-bit VG2617400D) M404A PDF

    KM41C4000A

    Abstract: No abstract text available
    Text: KMM584020A DRAM MODULES 4M X 8 CMOS DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584020A is a 4M bit x 8 Dynamic RAM high density memory module. The Samsung KMM584020A consist o f eight KM41C4000ALJ DRAMs


    OCR Scan     		KMM584020A KMM584020A KM41C4000ALJ 20-pin 30-pin 22/xF M584020A-7 KM41C4000A PDF

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HYM584000 Series SEMICONDUCTOR 4M x 8-blt CMOS DRAM MODULE DESCRIPTION The HYM584000 Is a 4M x 8-bit Fast page mode CMOS DRAM module consisting of eight HY514100 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		HYM584000 HY514100 HYM584000M 1BC01-20-MAY93 01-20-M PDF

    KMM5364100-7

    Abstract: Ras 1220
    Text: DRAM MODULES KMM5364100/G 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5364100 is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364100 consist of eight CMOS 4M x 4 bit DRAMs in 24-pin SOJ packages and four CMOS 4 M x 1 bit


    OCR Scan     		KMM5364100/G KMM5364100 24-pin 20-pin 72-pin KMM5364100-6 KMM5364100-7 KMM5354100-8 Ras 1220 PDF

    DRAM 1M X 8

    Abstract: DRAM DRAM 1M
    Text: SIEMENS Packing Information Tape and Reel Generation Type Package Type Devices Per Reel Tape Width 4M 4M x 1 DRAM 1Mx 4 DRAM P-SOJ-26/20-5 1500 24 mm 2 5 6 k x 16 P-SOJ-40-1 P-SOJ-40-3 900 44 mm 4M x 4 DRAM P-SOJ-26/24 1500 24 mm P-TSOPII-26/24 3000 24 mm


    OCR Scan     		P-SOJ-26/20-5 P-SOJ-40-1 P-SOJ-40-3 P-SOJ-26/24 P-TSOPII-26/24 P-TSOPII-44 P-SOJ-28-3 P-SOJ-42-1 P-TSOPII-50/44 P-TSOPII-50-1 DRAM 1M X 8 DRAM DRAM 1M PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM5404100/G DRAM MODULES 4M x 40 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tRAC tcAC tnc KMM5404100-6 60ns 15ns 110ns KMM5404100-7 70ns 20ns 130ns KMM5404100-8 80ns 20ns 150ns The Samsung KMM5404100 is a 4M bits x 40 Dynamic


    OCR Scan     		KMM5404100/G 110ns 130ns 150ns KMM5404100 24-pin 72-pin KMM5404100-6 PDF