CS81
Abstract: DS06-20206-1E 3813K 0.18-um CMOS standard cell library inverter
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20206-1E Semicustom CMOS Standard cell array CS81 Series • DESCRIPTION The CS81 series of 0.18 µm CMOS standard cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.
|
Original
|
PDF
|
DS06-20206-1E
CS81
DS06-20206-1E
3813K
0.18-um CMOS standard cell library inverter
|
CS91 Series
Abstract: CS91 fujitsu inverter air F0609
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20208-3E Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 µm CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16
|
Original
|
PDF
|
DS06-20208-3E
F0609
CS91 Series
CS91
fujitsu inverter air
F0609
|
CE81
Abstract: floor plan for 4 bit adder 722k
Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20110-5Ea Semicustom CMOS Embedded array CE81 Series • DESCRIPTION The CE81 series 0.18 m CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 34 million gates which have a gate delay time of 12 ps, resulting in both integration
|
Original
|
PDF
|
DS06-20110-5Ea
CE81
floor plan for 4 bit adder
722k
|
DS06-20112-1E
Abstract: CE77
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20112-1E Semicustom CMOS Embedded array CE77 Series • DESCRIPTION The CE77 series 0.25 µm CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.
|
Original
|
PDF
|
DS06-20112-1E
F0204
DS06-20112-1E
CE77
|
mb89371
Abstract: MB89371AH mb89371a Visitor counter a calculator LCD display china usb dvd player repair guide PG00-00072-3E MB91305PMC-G-BNDE1 MB90F378 mb89537a 565 MB90350E
Text: FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED North and South America FUJITSU MICROELECTRONICS AMERICA, INC. 1250 E. Arques Avenue, M/S 333 Sunnyvale, CA 94085-5401, U.S.A. Tel: +1-408-737-5600, Fax: +1-408-737-5999 http://www.fma.fujitsu.com/
|
Original
|
PDF
|
PG00-00072-3E
mb89371
MB89371AH
mb89371a
Visitor counter a calculator LCD display
china usb dvd player repair guide
PG00-00072-3E
MB91305PMC-G-BNDE1
MB90F378
mb89537a 565
MB90350E
|
CE77
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20112-2Ea Semicustom CMOS Embedded array CE77 Series • DESCRIPTION The CE77 series 0.25 m CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.
|
Original
|
PDF
|
DS06-20112-2Ea
CE77
|
ARM1176JZF-S
Abstract: ARM1176JZF 90 nm CMOS CS101 ARM1176 fujitsu inverter air "Single-Port RAM"
Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20210-3Ea Semicustom CMOS Standard Cell CS101 Series • DESCRIPTION CS101 series, a 90 nm standard cell product, is a CMOS ASIC that satisfies user’s demands for lower power consumption and higher speed. The leakage current of the transistors is the minimum level in the industry. Three
|
Original
|
PDF
|
DS06-20210-3Ea
CS101
ARM1176JZF-S
ARM1176JZF
90 nm CMOS
ARM1176
fujitsu inverter air
"Single-Port RAM"
|
CS81
Abstract: CS86 CS86ML CS86MN CS86MZ fujitsu frv fujitsu fr-v fujitsu inverter air
Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20209-3Ea Semicustom CMOS Standard cell CS86 Series • DESCRIPTION The CS86 series of 0.18 m standard cells is a line of CMOS ASICs based on higher integration implemented by introducing wiring pitch reduction technology and on I/O pad placement technology to the conventional CS81
|
Original
|
PDF
|
DS06-20209-3Ea
CS86MN,
CS86MZ,
CS86ML)
CS81
CS86
CS86ML
CS86MN
CS86MZ
fujitsu frv
fujitsu fr-v
fujitsu inverter air
|
CE77
Abstract: 0.25-um CMOS standard cell library inverter 0.25-um standard cell library
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20112-2E Semicustom CMOS Embedded array CE77 Series • DESCRIPTION The CE77 series 0.25 µm CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.
|
Original
|
PDF
|
DS06-20112-2E
F0701
CE77
0.25-um CMOS standard cell library inverter
0.25-um standard cell library
|
s29gl032n90
Abstract: MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11
Text: covPG00-00071e.fm 1 ページ 2007年5月10日 木曜日 午前11時29分 For further information please contact: Japan FUJITSU LIMITED Electronic Devices Business Unit Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,
|
Original
|
PDF
|
covPG00-00071e
PG00-00071-2E
s29gl032n90
MB15H121
S29GL064N90
s29gl256p90
S29GL01GP13
S29GL128P90
MB86A20
S29AL008J55
S29AL016J55
s29gl128p11
|
S29JL032H70
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS PRODUCT GUIDE 2009.10 Product Guide [ ASSP•Memory•ASIC ] PG00-00091-3E Technical Documentation of Electronic Devices DATA BOOK PRODUCT GUIDE DVD (GENERAL) DATA SHEET MANUAL FUJITSU SEMICONDUCTOR DATA SHEET Semiconductor Data Book
|
Original
|
PDF
|
PG00-00091-3E
ACD-10131
CD-10131
DS04-27211-5E
MB3789
S29JL032H70
|
CS81
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS DATA SHEET DS06-20206-5Ea Semicustom CMOS Standard cell CS81 Series • DESCRIPTION The CS81 series 0.18 m CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 40 million gates which have a gate delay time of 11 ps, resulting in both integration
|
Original
|
PDF
|
DS06-20206-5Ea
CS81
|
F0706
Abstract: MoSys CS201 MoSys 1T sram "Single-Port RAM"
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20211-1E Semicustom CMOS Standard Cell CS201 Series • DESCRIPTION The CS201 series of 65 nm standard cells is a line of CMOS ASICs that satisfy demands for lower power consumption and higher integration. These cells offer the minimum level of leakage current in the semiconductor
|
Original
|
PDF
|
DS06-20211-1E
CS201
F0706
F0706
MoSys
MoSys 1T sram
"Single-Port RAM"
|
CS91
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20208-1E Semicustom CMOS Standard cell array CS91 Series • DESCRIPTION The CS91 series 0.11 µm CMOS standard cell is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 48 million gates which have a gate delay time of 16
|
Original
|
PDF
|
DS06-20208-1E
F0207
CS91
|
|
DS06-20206-1E
Abstract: xl 1225 transistor CS81 0.18-um CMOS standard cell library inverter
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS06-20206-1E Semicustom CMOS Standard cell array CS81 Series • DESCRIPTION The CS81 series of 0.18 µm CMOS standard cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.
|
Original
|
PDF
|
DS06-20206-1E
DS06-20206-1E
xl 1225 transistor
CS81
0.18-um CMOS standard cell library inverter
|
f0602
Abstract: CS101 "Single-Port RAM"
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20210-2E Semicustom CMOS Standard Cell CS101 Series • DESCRIPTION CS101 series, a 90 nm standard cell product, is a CMOS ASIC that satisfies user’s demands for lower power consumption and higher speed. The leakage current of the transistors is the minimum level in the industry. Three
|
Original
|
PDF
|
DS06-20210-2E
CS101
F0602
f0602
"Single-Port RAM"
|
CS86MN
Abstract: 0.18-um CMOS technology characteristics CS81 CS86 CS86ML CS86MZ DS06-20209-1E 0.18-um CMOS standard cell library inverter
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20209-1E Semicustom CMOS Standard cell CS86 Series • DESCRIPTION The CS86 series of 0.18 µm standard cells is a line of CMOS ASICs based on higher integration implemented by introducing wiring pitch reduction technology and on I/O pad placement technology to the conventional CS81
|
Original
|
PDF
|
DS06-20209-1E
CS86MN,
CS86MZ,
CS86ML)
F0306
CS86MN
0.18-um CMOS technology characteristics
CS81
CS86
CS86ML
CS86MZ
DS06-20209-1E
0.18-um CMOS standard cell library inverter
|
DS06-20110-5E
Abstract: CE81 0.18-um CMOS standard cell library inverter
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20110-5E Semicustom CMOS Embedded array CE81 Series • DESCRIPTION The CE81 series 0.18 µm CMOS embedded array is a line of highly integrated CMOS ASICs featuring high speed and low power consumption. This series incorporates up to 34 million gates which have a gate delay time of 12 ps, resulting in both integration
|
Original
|
PDF
|
DS06-20110-5E
F0612
DS06-20110-5E
CE81
0.18-um CMOS standard cell library inverter
|
f9906
Abstract: xl 1225 CE81 Fujitsu inverter 0.18-um CMOS standard cell library inverter
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20110-1E Semicustom CMOS Macro embedded type cell array CE81 Series • DESCRIPTION The CE81 series of 0.18 µm CMOS macro-embedded cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.
|
Original
|
PDF
|
DS06-20110-1E
f9906
xl 1225
CE81
Fujitsu inverter
0.18-um CMOS standard cell library inverter
|
f9906
Abstract: CE81 0.18-um CMOS standard cell library inverter
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS06-20110-1E Semicustom CMOS Macro embedded type cell array CE81 Series • DESCRIPTION The CE81 series of 0.18 µm CMOS macro-embedded cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.
|
Original
|
PDF
|
DS06-20110-1E
f9906
CE81
0.18-um CMOS standard cell library inverter
|
DS0620
Abstract: No abstract text available
Text: DALLAS SEMICONDUCTOR DS0620 TM EX Professional Developer’s Upgrade Kit for DS9092K FEATURES TOUCH MEMORY EXECUTIVE TMEX Software Layers • Software support package for the Touch Memory Executive TMEX fwppU C A T fpA/ Fila Structure Multi-Tasking • Language-independent support for the Touch
|
OCR Scan
|
PDF
|
DS0620
DS9092K
DS9097
|
DS1868
Abstract: LM 4440 AUDIO AMPLIFIER CIRCUIT DS1230y-200 battery date codes circuit diagram laptop motherboard Scans-049 texas instrument catalog 74ls DS1666-50 st c031 s1040 diode
Text: S ystem E x t e n s i o n Data Book CPU Supervisors Digital Potentiometers Silicon Timed Circuits Thermal Products DALLAS SEMICONDUCTOR Copyright 1994 Dallas Semiconductor Corporation, Dallas, Texas All Rights Reserved. Circuit diagrams are included to illustrate typical semiconductor applications. Complete information sufficient for
|
OCR Scan
|
PDF
|
28-PIN
DS9003
DS1868
LM 4440 AUDIO AMPLIFIER CIRCUIT
DS1230y-200 battery date codes
circuit diagram laptop motherboard
Scans-049
texas instrument
catalog 74ls
DS1666-50
st c031
s1040 diode
|
DS2501 transistor
Abstract: WASHING machine interfacing 8051 Sony Semiconductor Replacement Handbook 1991 touch dimmer TC 306 S PNI 12927 edn handbook dallas ds2501 NE5532 signetics texas instruments cmos mosfet MOSFET BOOK
Text: J Copyright 1996 by Dallas SemiconductorCorporation. All Rights Reserved. Dallas Semiconductor retains all ownership rights in the technology described herein. Trademarks and registered trademarks of Dallas Semiconductor include each of the following: Dallas Semiconductor Corporation
|
OCR Scan
|
PDF
|
DS1802
DS2501 transistor
WASHING machine interfacing 8051
Sony Semiconductor Replacement Handbook 1991
touch dimmer TC 306 S
PNI 12927
edn handbook
dallas ds2501
NE5532 signetics
texas instruments cmos mosfet
MOSFET BOOK
|
1EEE1394
Abstract: H 735 b1369 xl 1225 CE81
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS06-20110-1E Semicustom CMOS Macro embedded type cell array CE81 Series • DESCRIPTION The CE81 series of 0.18 Am CMOS macro-embedded cell arrays is a line of highly integrated CMOS ASICs featuring high speed and low power consumption at the same time.
|
OCR Scan
|
PDF
|
|