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    Untitled

    Abstract: No abstract text available
    Text: RF3024 RF3024 BROADBAND MEDIUM POWER SPDT SWITCH Package: SC70, 6-Pin Product Description Features The RF3024 is a GaAs pHEMT single-pole double-throw SPDT switch designed for general purpose switching applications which require very low insertion loss, moderate isolation, and medium power handling capability. The RF3024 is ideally suited for battery-powered and low control


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    PDF RF3024 RF3024 10MHz 28dBm 18dBm 915MHz) 1980MHz) DS100118

    SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER

    Abstract: RF5521 wifi schematic
    Text: RF5521 3.3V, SWITCH AND LNA FRONT END MODULE Package Style: QFN, 10-pin, 1.75mmx1.75mmx0.5mm C_B T 10 Features    Single Supply Voltage 3.0V to 4.5V Integrated SP3T Switch and LNA with Bypass Typical gain is 12dB and 2.0dB NF in RX Mode Pin-toPin


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    PDF RF5521 10-pin, 75mmx1 75mmx0 IEEE802 11b/g/n RF5521 RF5521: DS100118 SCHEMATIC DIAGRAM OF 2.4 GHZ WIFI RF POWER wifi schematic

    32N30

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 32A VCE sat ≤ 3.2V IXBH32N300 IXBT32N300 TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR


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    PDF IC110 IXBH32N300 IXBT32N300 O-247 32N300 32N30

    IXBH32N300

    Abstract: B32N 32N30 IXBT32N300 32N300
    Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH32N300 IXBT32N300 VCES = 3000V IC110 = 32A VCE sat ≤ 3.2V TO-247 (IXBH) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR


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    PDF IXBH32N300 IXBT32N300 IC110 O-247 32N300 IXBH32N300 B32N 32N30 IXBT32N300