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Catalog Datasheet	MFG & Type	PDF	Document Tags
IXBF20N300 Abstract: No abstract text available Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC90 = 15A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C	Original	PDF	IXBF20N300 20N300 1-23-09-A IXBF20N300
Untitled Abstract: No abstract text available Text: FMS2016-001 FMS2016-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features Optimum Technology Matching Applied ANT GaAs HBT GaAs MESFET DE SiGe BiCMOS Si BiCMOS Si CMOS	Original	PDF	FMS2016-001 FMS2016-001 FMS2016-001SR FMS2016-001SQ FMS2016-001SB FMS2016-001-EB DS100125
Untitled Abstract: No abstract text available Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC110 = 14A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IXBF20N300 IC110 IC110 50/60Hz, 20N300 6-05-12-B
EV-SP-000044-001 Abstract: FPD200 CB100 FPD20 FPD2000AS RO4003 cw 7687 A114 es IPC 9701 W2020 Text: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT NOT FOR NEW DESIGNS Package Style: AS Product Description Features Optimum Technology Matching Applied GaAs HBT GaAs MESFET DE InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT	Original	PDF	FPD2000AS 33dBm 46dBm FPD2000AS 85GHz) EB2000AS-AA DS100125 EV-SP-000044-001 FPD200 CB100 FPD20 RO4003 cw 7687 A114 es IPC 9701 W2020
FPD1500DFN Abstract: SSG 23 TRANSISTOR stu 407 FPD1500 FPD750SOT89 w300 STU 390 SSG TRANSISTOR NE 3160 Text: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT NOT FOR NEW DESIGNS Package: 2mmx2mm DFN Product Description Features Optimum Technology Matching Applied GaAs HBT 27dBm Output Power P1dB @ 1.85GHz	Original	PDF	FPD1500DFN 27dBm 85GHz 42dBm FPD1500DFN mx750 EB1500DFN-BC SSG 23 TRANSISTOR stu 407 FPD1500 FPD750SOT89 w300 STU 390 SSG TRANSISTOR NE 3160
FMS2014QFN Abstract: No abstract text available Text: FMS2014-001 FMS2014-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features Optimum Technology Matching Applied ANT GaAs HBT GaAs MESFET InGaP HBT V2 DE V1 SiGe BiCMOS	Original	PDF	FMS2014-001 FMS2014-001 DS100125 FMS2014-001SR FMS2014-001SQ FMS2014-001SB FMS2014-001-EB FMS2014QFN
CAPACITOR 33PF Abstract: 8653 p FPD1000AS T491B105M035AS7015 ATC600S680 atc600s2r0bw TP 220 bjt Tyco 108-18 capacitor 1mf BC 251 transistor Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT NOT FOR NEW DESIGNS Package Style: AS Product Description Features Optimum Technology Matching Applied GaAs HBT DE GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS W SiGe HBT	Original	PDF	FPD1000AS 31dBm 42dBm -52dBc 21dBm FPD1000AS 14GHz) EB1000AS-AD CAPACITOR 33PF 8653 p T491B105M035AS7015 ATC600S680 atc600s2r0bw TP 220 bjt Tyco 108-18 capacitor 1mf BC 251 transistor
Untitled Abstract: No abstract text available Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 14A VCE sat ≤ 3.2V IXBF20N300 (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IC110 IXBF20N300 20N300 6-05-12-B
IXBF20N300 Abstract: 20N300 20N30 ic901 TF550 b20n300 S 2230 Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC90 = 15A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C	Original	PDF	IXBF20N300 20N300 IXBF20N300 20N30 ic901 TF550 b20n300 S 2230