IXBF20N300
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC90 = 15A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C
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IXBF20N300
20N300
1-23-09-A
IXBF20N300
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Untitled
Abstract: No abstract text available
Text: FMS2016-001 FMS2016-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features Optimum Technology Matching Applied ANT GaAs HBT GaAs MESFET DE SiGe BiCMOS Si BiCMOS Si CMOS
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FMS2016-001
FMS2016-001
FMS2016-001SR
FMS2016-001SQ
FMS2016-001SB
FMS2016-001-EB
DS100125
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Untitled
Abstract: No abstract text available
Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC110 = 14A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXBF20N300
IC110
IC110
50/60Hz,
20N300
6-05-12-B
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EV-SP-000044-001
Abstract: FPD200 CB100 FPD20 FPD2000AS RO4003 cw 7687 A114 es IPC 9701 W2020
Text: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT NOT FOR NEW DESIGNS Package Style: AS Product Description Features Optimum Technology Matching Applied GaAs HBT GaAs MESFET DE InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT
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FPD2000AS
33dBm
46dBm
FPD2000AS
85GHz)
EB2000AS-AA
DS100125
EV-SP-000044-001
FPD200
CB100
FPD20
RO4003
cw 7687
A114 es
IPC 9701
W2020
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FPD1500DFN
Abstract: SSG 23 TRANSISTOR stu 407 FPD1500 FPD750SOT89 w300 STU 390 SSG TRANSISTOR NE 3160
Text: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT NOT FOR NEW DESIGNS Package: 2mmx2mm DFN Product Description Features Optimum Technology Matching Applied GaAs HBT 27dBm Output Power P1dB @ 1.85GHz
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FPD1500DFN
27dBm
85GHz
42dBm
FPD1500DFN
mx750
EB1500DFN-BC
SSG 23 TRANSISTOR
stu 407
FPD1500
FPD750SOT89
w300
STU 390
SSG TRANSISTOR
NE 3160
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FMS2014QFN
Abstract: No abstract text available
Text: FMS2014-001 FMS2014-001 High Power GaAs SPDT Switch HIGH POWER GaAs SPDT SWITCH NOT FOR NEW DESIGNS Package: 3mmx3mm QFN Product Description Features Optimum Technology Matching Applied ANT GaAs HBT GaAs MESFET InGaP HBT V2 DE V1 SiGe BiCMOS
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FMS2014-001
FMS2014-001
DS100125
FMS2014-001SR
FMS2014-001SQ
FMS2014-001SB
FMS2014-001-EB
FMS2014QFN
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CAPACITOR 33PF
Abstract: 8653 p FPD1000AS T491B105M035AS7015 ATC600S680 atc600s2r0bw TP 220 bjt Tyco 108-18 capacitor 1mf BC 251 transistor
Text: FPD1000AS FPD1000AS 1W Packaged Power pHEMT 1W PACKAGED POWER pHEMT NOT FOR NEW DESIGNS Package Style: AS Product Description Features Optimum Technology Matching Applied GaAs HBT DE GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS W SiGe HBT
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FPD1000AS
31dBm
42dBm
-52dBc
21dBm
FPD1000AS
14GHz)
EB1000AS-AD
CAPACITOR 33PF
8653 p
T491B105M035AS7015
ATC600S680
atc600s2r0bw
TP 220 bjt
Tyco 108-18
capacitor 1mf
BC 251 transistor
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Untitled
Abstract: No abstract text available
Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 14A VCE sat ≤ 3.2V IXBF20N300 (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXBF20N300
20N300
6-05-12-B
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IXBF20N300
Abstract: 20N300 20N30 ic901 TF550 b20n300 S 2230
Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC90 = 15A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C
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IXBF20N300
20N300
IXBF20N300
20N30
ic901
TF550
b20n300
S 2230
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