RF3230
Abstract: No abstract text available
Text: RF3230 QUAD-BAND GMSK TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2 22 GND DC Block Features Applications Battery Powered 3G
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RF3230
00mmx6
00mmx1
GSM850/EGSM900/DCS/
EIA-481.
DS110216
RF3230
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RFMX-2
Abstract: Emerson 142-0741-851
Text: RFMX2015 RFMX2015Differential IF Down-Converter 2300 MHz to 2700MHz DIFFERENTIAL IF DOWN-CONVERTER 2300MHZ TO 2700MHZ Features IFN IFP GND NC 17 16 NC 1 15 NC RFIN 2 14 NC GND 3 13 GND GND 4 12 GND GND 5 11 LO 7 8 9 10 GND 6 NC Applications
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RFMX2015
RFMX2015Differential
2700MHz
2300MHZ
20-Pin,
2000MHz
3000MHz
RFMX-2
Emerson 142-0741-851
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Untitled
Abstract: No abstract text available
Text: RF7222 3V W-CDMA BAND 2 LINEAR PA MODULE Package Style: Module, 10-Pin, 3mmx3mmx1.0mm Features VBAT HSDPA and HSPA+ Compliant Low Voltage Positive Bias Supply 3.0V to 4.35V +28.5dBm Linear Output Power (+27.0dBm HSDPA
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RF7222
10-Pin,
203mm
330mm
025mm
DS110228
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Untitled
Abstract: No abstract text available
Text: RFXF0573 RFXF05731:1 SMT Transformer 1:16 SMT TRANSFORMER Package: S-20 Features Frequency Range 5MHz to 40MHz Low Cost and RoHS Compliant Flux Coupled Industry Standard SMT package Available in Tape-and -Reel 50Ω Characteristic Impedance
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RFXF0573
RFXF05731
40MHz
RFXF0573
RFXF0573SB
DS110211
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Untitled
Abstract: No abstract text available
Text: RFRP2920 RFRP2920 5MHz to 100MHz Si REVERSE HYBRID 5MHz to 100MHz Si REVERSE HYBRID LOW CURRENT Package: SOT-115J +VB Features Excellent Linearity Superior Return Loss Performance Extremely Low Distortion Optimal Reliability Low Noise
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RFRP2920
100MHz
RFRP2920
OT-115J
160mA
24VDC
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RFSW2041D
Abstract: No abstract text available
Text: RFSW2041D RFSW2041D DC to 25GHz GaAs SPDT Switch DC TO 25GHz GaAs SPDT SWITCH Package: Die, 1.91mmx2.11mmx0.10mm Product Description Features RFMD’s RFSW2041D is a reflective SPDT GaAs microwave monolithic integrated circuit MMIC switch designed using the RFMD FD05 0.5m
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RFSW2041D
25GHz
RFSW2041D
91mmx2
11mmx0
20GHz
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3g UMTS signal Schematic Diagram
Abstract: No abstract text available
Text: RF3230 QUAD-BAND GMSK TXM, 2 UMTS SWITCH PORTS GND GND GND GND GND GND HB RFIN 1 GND Package Style: Module, 7.00mmx6.00mmx1.00mm 30 29 28 27 26 25 24 GND 2 Applications Battery Powered 3G Handsets GSM850/EGSM900/DCS/
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RF3230
00mmx6
00mmx1
GSM850
EGSM900
DCS1800
PCS1900
RF3230TR13
RF3230TR7
EIA-481.
3g UMTS signal Schematic Diagram
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Untitled
Abstract: No abstract text available
Text: RFXF0573 RFXF05731:1 SMT Transformer 1:16 SMT TRANSFORMER Package: S-20 Features Frequency Range 5MHz to 40MHz Low Cost and RoHS Compliant Flux Coupled Industry Standard SMT package Available in Tape-and -Reel 50Ω Characteristic Impedance
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RFXF05731
RFXF0573
40MHz
RFXF0573
RFXF0573SB
RFXF0573SQ
RFXF0573SR
RFXF0573TR13
DS110211
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A1933
Abstract: No abstract text available
Text: RF3932D 60W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features RF OUT VD Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF IN VG • Output Power 75W at P3dB
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RF3932D
96mmx1
92mmx0
RF3932D
DS110224
A1933
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RF3021
Abstract: No abstract text available
Text: RF3021 RF3021SPDT, High Isolation, Single Bit Control, Switch SPDT, HIGH ISOLATION, SINGLE BIT CONTROL, SWITCH Package: QFN, 16-Pin, 3 mm x 3 mm Product Description Features The RF3021 is a high isolation single-pole double-throw SPDT switch designed for general purpose switching applications requiring moderate
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RF3021SPDT,
RF3021
16-Pin,
RF3021
DS110203
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RFPA3806TR7
Abstract: trace code marking RFMD EEF-10
Text: RFPA3806 RFPA3806 GaAs HBT 2STAGE POWER AMPLIFIER GaAs HBT 2-STAGE POWER AMPLIFIER 700MHZ TO 2700 MHZ NC 5 NC 6 700MHz to 2700MHz Operation Applications GaAs Driver for Base Station Amplifiers PA Stage for Commercial Wireless Infrastructure
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RFPA3806
RFPA3806
700MHZ
14GHz
50dBm
2700MHz
DS110224
PA3806
RFPA3806TR7
trace code marking RFMD
EEF-10
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QBDW033
Abstract: QBDW025A0B 470uf, 25v electrolytic capacitor PEC 808
Text: Data Sheet January 5, 2012 QBDW025A0B Series Power Modules; DC-DC Converters 36-75Vdc Input; 8.1-13.2Vdc Output; 25A Output Current BARRACUDA SERIES Features • Compliant to RoHS EU Directive 2002/95/EC -Z versions • High and flat efficiency profile >95.5% at 12Vdc, 40% to 100%
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QBDW025A0B
36-75Vdc
2002/95/EC
12Vdc,
36-75Vdc
25Adc
1-888-LINEAGE
1-972-244-WATT
DS11-022
QBDW033
470uf, 25v electrolytic capacitor
PEC 808
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Untitled
Abstract: No abstract text available
Text: Data Sheet June 27, 2012 EBVW020A0B Series Power Modules; DC-DC Converters 36-75Vdc Input; 12Vdc Output; 20A Output Current BARRACUDA SERIES Features • • RoHS Compliant Applications Distributed power architectures
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EBVW020A0B
36-75Vdc
12Vdc
plate44-WATT
DS11-023
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Untitled
Abstract: No abstract text available
Text: Data Sheet June 27, 2012 EBVW025A0B Series Power Modules; DC-DC Converters 36-75Vdc Input; 12Vdc Output; 25A Output Current BARRACUDA SERIES Features • • RoHS Compliant Applications Distributed power architectures
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EBVW025A0B
36-75Vdc
12Vdc
plate44-WATT
DS11-025
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ds1102
Abstract: 200B 27LV64 27LV64-20 DK-2750
Text: 27LV64 64K 8K x 8 Low-Voltage CMOS EPROM •1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC PGM NC A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 30 31 1 32 2 5 29 6 28 7 8 9 10 27 26 25 24 A8 A9 A11 NC OE A10 CE O7 O6 20 19 21 18 22 13
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27LV64
27LV64
D-81739
ds1102
200B
27LV64-20
DK-2750
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Microchip vk 1103
Abstract: No abstract text available
Text: fiW l e « « . 27LV128 M Ie r o o h Ip 128K 16K X 8 Low Voltage CMOS EPROM FEATURES DESCRIPTION • Wide voltage rang« 3.0V to 5.5V • High speed performance — 200ns Maximum access time at 3.0V • CMOS Technology for low power consumption — 8mA active current at 3.0V
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27LV128
200ns
100fiA
28-pin
32-pin
DS11025A-8
Microchip vk 1103
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Untitled
Abstract: No abstract text available
Text: M 27LV64 ic r o c h ip 64K 8K x 8 Low-Voltage CMOS EPROM FEATURES PACKAGE TYPE • Wide voltage range 3.0V to 5.5V • High speed performance - 200 ns access time available at 3.0V • CMOS Technology for low power consumption • 8 mA active current at 3.0V
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27LV64
28-pin
32-pin
11024D-page
0013Cm
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Untitled
Abstract: No abstract text available
Text: 27LV64 M icrochip 64K 8K x 8 Low Voltage CMOS EPROM DESCRIPTION FEATURES Wide voltage rang« 3.0V to 5.5V High speed performance —200ns maximum access time at 3.0V CMOS Technology for low power consumption — 8mA active current at 3.0V — 20mA active current at 5.5V
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27LV64
200ns
100jiA
32-pin
28-pin
DS11024A-8
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Untitled
Abstract: No abstract text available
Text: M 27LV256 ic r o c h ip 256K 32K x 8 Low-Voltage CMOS EPROM FEATURES PACKAGE TYPES PDIP • Wide voltage range 3.0V to 5.5V Vpp C • 1 A12 C 2 • High speed performance 26 H Vcc 27 DA14 26 JA 1 3 25 HAS A7 E 3 - 200 ns access time available at 3.0V A6 C 4
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27LV256
D01flflScl
DS11020F-page
27LV256
DSii020F-page7-40
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Untitled
Abstract: No abstract text available
Text: JÊ Ë Ê È L * & M ig z r o n c h ip i 27LV256 256K 32K x 8 Low-Voltage CMOS EPROM PACKAGE TYPES FEATURES • Wide voltage range 3.0V to 5.5V PDIP • High speed performance - 200 ns access time available at 3.0V Vpp H • 1 28 H Vcc A12 C 2 27 H A14 A7 H 3
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28-pin
32-pin
DS11020G-page
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Untitled
Abstract: No abstract text available
Text: $ 27LV512 M ic r o c h ip 512K 64K x 8 Low-Voltage CMOS EPROM PACKAGE TYPE FEATURES • W ide voltage range 3.0V to 5.5V • High speed performance - 200 ns access tim e available at 3.0V • CMOS Technology fo r low pow er consum ption - 12 m A Active current at 3.0V
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27LV512
28-pin
32-pin
DS11021
27LV512
8x20mm
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DS11021
Abstract: No abstract text available
Text: 27LV512 M ic r o c h ip 512K 64K X 8 Low Voltage CMOS EPROM FEATURES • Wide voltage range 3.0V to 5.5V • High speed performance — 200 ns access time available at 3.0V • CMOS Technology for low power consumption — 12 mA Active current at 3.0V
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27LV512
28-pin
DS11021
8x20mm
27LV512
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Untitled
Abstract: No abstract text available
Text: & 27LV64 M icrochip 64K 8K x 8 Low-Voltage CMOS EPROM FEATURES DESCRIPTION • W id e v o lta g e ra ng e 3 .0 V to 5 .5 V • H igh s p e e d p e rfo rm a n ce — 2 0 0 n s a cce ss tim e a v a ila b le a t 3 .0 V • C M O S T e c h n o lo g y fo r low p o w e r c o n su m p tio n
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27LV64
DS11024B-page
MCHPD001
MCHPD00Ï
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F-91300
Abstract: 9010 eprom f91300
Text: fiW l e « « . 27LV128 MIeroohIp 128K 16K X8 Low Voltage CMOS EPROM FEATURES DESCRIPTION • Wide voltage rang« 3.0V to 5.5V • High speed performance —200ns Maximum access time at 3.0V • CMOS Technology for low power consumption — 8mA active current at 3.0V
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27LV128
200ns
100fiA
28-pin
32-pin
DS11025A-8
F-91300
9010 eprom
f91300
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