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    RF3934D

    Abstract: GaN amplifier 120W SiC BJT RFMD HEMT GaN SiC 120w power Operational amplifier 10A
    Text: RF3934D 120W GaN on SiC POWER AMPLIFIER DIE RF3934D Proposed 120W GaN ON SiC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology   Packaged Small Signal Gain=13dB at 2GHz 48V Typical Packaged


    Original     		PDF RF3934D RF3934D 96mmx4 57mmx0 DS110225 GaN amplifier 120W SiC BJT RFMD HEMT GaN SiC 120w power Operational amplifier 10A