Rf6652
Abstract: No abstract text available
Text: RF6652Power Management IC RF6652 Proposed POWER MANAGEMENT IC Package: 12-Bump WLSCP, 4 x 3 Array 1.65mm x 1.25mm VEN_PA1 VEN_PA2 VEN_PA3 VEN_PA4 VMODE1 VMODE0 Digital Mode Control Compatibility VPWR Reference Voltage Generator Control Logic Features
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RF6652Power
RF6652
12-Bump
GRM188R61A225KE34D
RMTMK107BJ105KA-T
DS120411
Rf6652
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RF6652
Abstract: HPM 15 smps dc-dc circuits
Text: RF6652A Power Management IC RF6652A Proposed POWER MANAGEMENT IC Package: 12-Bump WLSCP, 4 x 3 Array 1.65mm x 1.25mm VEN_PA1 VEN_PA2 VEN_PA3 VEN_PA4 VMODE1 VMODE0 Digital Mode Control Compatibility VPWR Reference Voltage Generator Control Logic Features
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RF6652A
RF6652A
12-Bump
650mA
GRM188R61A225KE34D
RMTMK107BJ105KA-T
DS120411
RF6652
HPM 15
smps dc-dc circuits
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RF3833
Abstract: Gan transistor rf gan amplifier transistor amplifier wideband RF3833PCBA-410 GaN BJT RF POWER TRANSISTOR 30MHz
Text: RF3833 30MHz to 2000MHz, 25W GaN Wide-Band Power Amplifier RF3833 Proposed 30MHz TO 2000MHz, 25W GaN WIDE-BAND POWER AMPLIFIER Package: Air-Cavity Cu Features Advanced GaN HEMT Technology Output Power of 25W Advanced Heat-Sink Technology
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RF3833
30MHz
2000MHz,
RF3833
43dBm
2000MHz)
200MHz
Gan transistor
rf gan amplifier
transistor amplifier wideband
RF3833PCBA-410
GaN BJT
RF POWER TRANSISTOR 30MHz
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Untitled
Abstract: No abstract text available
Text: RF3833 30MHz to 2000MHz, 25W GaN Wide-Band Power Amplifier RF3833 Proposed 30MHz TO 2000MHz, 25W GaN WIDE-BAND POWER AMPLIFIER Package: Air-Cavity Cu Features Advanced GaN HEMT Technology Output Power of 25W Advanced Heat-Sink Technology 30–2000 MHz Instantaneous
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RF3833
30MHz
2000MHz,
43dBm
2000MHz)
200MHz
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