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    Rochester Electronics LLC DS1265Y-70

    IC NVSRAM 8MBIT PARALLEL 36EDIP
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    Maxim Integrated Products DS1265Y-70

    IC NVSRAM 8MBIT PARALLEL 36EDIP
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    Quest Components DS1265Y-70 4
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    Rochester Electronics DS1265Y-70 1,514 1
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    Maxim Integrated Products DS1265AB-70

    IC NVSRAM 8MBIT PARALLEL 36EDIP
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    Rochester Electronics LLC DS1265AB-70

    IC NVSRAM 8MBIT PARALLEL 36EDIP
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    Maxim Integrated Products DS1265Y-70-

    IC NVSRAM 8MBIT PARALLEL 36EDIP
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    DigiKey DS1265Y-70- Tube 9
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    DS1265 Datasheets (35)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    DS1265AB Dallas Semiconductor 8M Nonvolatile SRAM Original PDF
    DS1265AB Maxim Integrated Products 8M Nonvolatile SRAM Original PDF
    DS1265AB Dallas Semiconductor 8M Nonvolatile SRAM Scan PDF
    DS1265AB-100 Dallas Semiconductor 8M Nonvolatile SRAM Original PDF
    DS1265AB-100+ Maxim Integrated Products 8M Nonvolatile SRAM Original PDF
    DS1265AB-100IND Maxim Integrated Products 8M Nonvolatile SRAM Original PDF
    DS1265AB-100-IND Maxim Integrated Products 8M Nonvolatile SRAM Original PDF
    DS1265AB-70 Dallas Semiconductor 8M Nonvolatile SRAM Original PDF
    DS1265AB-70+ Maxim Integrated Products 8M Nonvolatile SRAM Original PDF
    DS1265AB-70IND Maxim Integrated Products 8M Nonvolatile SRAM Original PDF
    DS1265AB-70-IND Maxim Integrated Products 8M Nonvolatile SRAM Original PDF
    DS1265AB-70IND+ Maxim Integrated Products 8M Nonvolatile SRAM Original PDF
    DS1265W Dallas Semiconductor 3.3V 8Mb Nonvolatile SRAM Original PDF
    DS1265W-100 Dallas Semiconductor 3.3V 8Mb Nonvolatile SRAM Original PDF
    DS1265W-100+ Maxim Integrated Products 3.3V 8Mb Nonvolatile SRAM Original PDF
    DS1265W-100-IND Dallas Semiconductor 3.3V 8Mb Nonvolatile SRAM Original PDF
    DS1265W-100IND Maxim Integrated Products 8M Nonvolatile SRAM Original PDF
    DS1265W-100IND+ Maxim Integrated Products 3.3V 8Mb Nonvolatile SRAM Original PDF
    DS1265W-150 Dallas Semiconductor 3.3V 8Mb Nonvolatile SRAM Original PDF
    DS1265W-150+ Maxim Integrated Products 3.3V 8Mb Nonvolatile SRAM Original PDF

    DS1265 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    16MB SRAM

    Abstract: 1024k DS1270W DS1249W DS1265W 36-DIP
    Text: INDUSTRY’S HIGHEST DENSITY 3.3V NONVOLATILE SRAMs Densities up to 16Mb Protect Data for 3.3V Systems The DS1249W, DS1265W, and DS1270W are low-voltage, high-density NV SRAMs designed to preserve critical system data during power loss. Each of these dual in-line encapsulated modules operates on a single 3.3V power supply and employs


    Original     		PDF DS1249W, DS1265W, DS1270W 100ns 150ns DS1249W DS1265W 1024k 2048k 16MB SRAM 36-DIP

    DS1265

    Abstract: DS1265AB DS1265AB-100 DS1265AB-70 DS1265AB-70IND DS1265Y DS1265Y-100 DS1265Y-70
    Text: DS1265Y/AB 8M Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


    Original     		PDF DS1265Y/AB DS1265Y) DS1265AB) DS9034PC DS9034PCI 100ns DS1265 DS1265AB DS1265AB-100 DS1265AB-70 DS1265AB-70IND DS1265Y DS1265Y-100 DS1265Y-70

    DS1265

    Abstract: DS1265AB DS1265Y
    Text: DS1265Y/AB DS1265Y/AB 8M Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 36 VCC NC 2 35 A19 A18 3 34 NC A16 4 33 A15 • Low–power CMOS operation A14 5 32 A17 • Read and write access times as fast as 70 ns


    Original     		PDF DS1265Y/AB DS1265Y/AB DS1265 DS1265AB DS1265Y

    DS1265

    Abstract: DS1265W DS1265W-100 DS1265W-100IND
    Text: 19-5617; Rev 11/10 DS1265W 3.3V 8Mb Nonvolatile SRAM www.maxim-ic.com FEATURES • •      PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles


    Original     		PDF DS1265W 100ns MDT36 DS1265 DS1265W DS1265W-100 DS1265W-100IND

    Untitled

    Abstract: No abstract text available
    Text: DS1265W 3.3V 8Mb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


    Original     		PDF DS1265W 100ns DS1265W 150ns 36-PIN 740MIL 36-PIN

    DS1265

    Abstract: DS1265W DS1265W-100 DS1265W-150
    Text: DS1265W 3.3V 8Mb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


    Original     		PDF DS1265W 100ns DS1265W 150ns 36-PIN 740MIL 36-PIN DS1265 DS1265W-100 DS1265W-150

    Untitled

    Abstract: No abstract text available
    Text: 19-5617; Rev 11/10 DS1265W 3.3V 8Mb Nonvolatile SRAM www.maxim-ic.com FEATURES • •      PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles


    Original     		PDF DS1265W 100ns MDT36

    Untitled

    Abstract: No abstract text available
    Text: 19-5616; Rev 11/10 DS1265Y/AB 8M Nonvolatile SRAM www.maxim-ic.com FEATURES • •        PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles


    Original     		PDF DS1265Y/AB DS1265Y) DS1265AB) MDT36

    Untitled

    Abstract: No abstract text available
    Text: Rev: 122002 ERRATA SHEET DS1265W Revision B Errata The errata listed below describe situations where DS1265W revision B modules perform differently than expected or differently than described in the data sheet. Maxim Integrated Products, Inc., intends to correct


    Original     		PDF DS1265W DS1265W

    DS1265

    Abstract: DS1265AB DS1265Y
    Text: DS1265Y/AB PRELIMINARY DS1265Y/AB 8M Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 36 VCC NC 2 35 A19 A18 3 34 NC A16 4 33 A15 • Low–power CMOS operation A14 5 32 A17 • Read and write access times as fast as 70 ns


    Original     		PDF DS1265Y/AB DS1265Y/AB DS1265 DS1265AB DS1265Y

    DS1265

    Abstract: DS1265AB DS1265AB-100 DS1265AB-70 DS1265Y DS1265Y-100 DS1265Y-70
    Text: DS1265Y/AB 8M Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


    Original     		PDF DS1265Y/AB DS1265Y) DS1265AB) 36-pin 600-mil DS1265Y/AB 740-MIL 36-PIN DS1265 DS1265AB DS1265AB-100 DS1265AB-70 DS1265Y DS1265Y-100 DS1265Y-70

    Untitled

    Abstract: No abstract text available
    Text: DS1265W 3.3V 8Mb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


    Original     		PDF DS1265W 100ns 36-Pin 740mil 100pF 150ns DS1265W

    DS1265

    Abstract: DS1265AB DS1265AB-100 DS1265AB-70 DS1265Y DS1265Y-100 DS1265Y-70
    Text: DS1265Y/AB 8M Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns


    Original     		PDF DS1265Y/AB DS1265Y) DS1265AB) 36-pin 600-mil DS1265Y/AB 740-MIL 36-PIN DS1265 DS1265AB DS1265AB-100 DS1265AB-70 DS1265Y DS1265Y-100 DS1265Y-70

    DS1265W

    Abstract: No abstract text available
    Text: ERRATA SHEET DS1265W 3.3V 8M Nonvolatile SRAM REVISION B ERRATA The errata listed below describe a situation where DS1265W revision B modules may perform differently than expected or differently than described in the data sheet. Dallas Semiconductor/Maxim intends to fix


    Original     		PDF DS1265W DS1265W

    DS1265

    Abstract: DS1265W DS1265W-100 DS1265W-100IND DS1265W-150 DS9034PC DS9034PCI
    Text: DS1265W 3.3V 8Mb Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


    Original     		PDF DS1265W 100ns 150ns DS9034PC DS9034PCI DS1265 DS1265W DS1265W-100 DS1265W-100IND DS1265W-150 DS9034PCI

    K19 FET

    Abstract: plc fire protection DS1265W DS2065W DS2065W-100
    Text: Rev 0; 1/05 DS2065W 3.3V Single-Piece 8Mb Nonvolatile SRAM Features The DS2065W is a 8Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in


    Original     		PDF DS2065W 256-ball K19 FET plc fire protection DS1265W DS2065W-100

    ST L1117

    Abstract: ST MICROELECTRONICS L1117 33 LM7905 TO-92 ENE CP2211 CP2211 TL496 equivalent cp2206 MC34153 L7805 SOT 89 transistor L7905
    Text: Technology for Innovators TM Standard Linear Products Cross-Reference Including Amplifiers, Comparators, Timers, Peripheral Drivers, Power Management Controllers, References, Regulators, Supervisors, Shunts, Transmitters and Receivers INTERFACE COMPARATORS


    Original     		PDF A011905 ST L1117 ST MICROELECTRONICS L1117 33 LM7905 TO-92 ENE CP2211 CP2211 TL496 equivalent cp2206 MC34153 L7805 SOT 89 transistor L7905

    Untitled

    Abstract: No abstract text available
    Text: DS1265Y/AB PRELIMINARY DALLAS DS1265Y/AB 8M Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNM ENT • 1 0 years minimum data retention in the absence of external power NC É NC • Data is autom atically protected during power loss 1 A18 i • Unlim ited write cycles


    OCR Scan     		PDF DS1265Y/AB DS1265Y) DS1265AB) 36-pin DS1265Y/AB 36-PIN

    Untitled

    Abstract: No abstract text available
    Text: DS1265Y/AB DALLAS DS1265Y/AB 8M Nonvolatile SRAM s e m ic o n d u c to r FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC É NC • Data is autom atically protected during power loss 1 A18 i • Unlim ited write cycles


    OCR Scan     		PDF DS1265Y/AB DS1265Y) DS1265AB) 36-pin DS1265Y/AB 36-PIN

    DS1265

    Abstract: DS1265AB DS1265AB-100 DS1265AB-70 DS1265Y DS1265Y-100 DS1265Y-70
    Text: DS1265Y/AB 8M Nonvolatile SRAM ww w.dalsem i.com PIN ASSIGNMENT FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation


    OCR Scan     		PDF DS1265Y/AB DS1265Y) 1265AB) 36-pin 600-mil DS1265Y/AB 740-MIL 36-PIN DS1265 DS1265AB DS1265AB-100 DS1265AB-70 DS1265Y DS1265Y-100 DS1265Y-70

    S1265

    Abstract: No abstract text available
    Text: DS1265Y/A8 DALLAS SEMICONDUCTOR DS1265Y/AB 8M Nonvolatile SRAM FEATURES • 10 years minimum data retention in the absence of external power NC I 1 1 • Data is autom atically protected during power loss NC I I A lo 1 • Unlim ited w rite cycles 1 A16 1 1


    OCR Scan     		PDF DS1265Y/A8 DS1265Y) DS1265AB) DS1265Y/AB S1265

    Untitled

    Abstract: No abstract text available
    Text: DS1265Y/AB PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1265Y/AB 8M Nonvolatile SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC NC • Datais automatically protected during power loss A18 • Unlimited write cycles


    OCR Scan     		PDF DS1265Y/AB DS1265Y) DS1265Y/AB DS1265AB) 36-pin 35-PIN

    Untitled

    Abstract: No abstract text available
    Text: DS1265Y/AB P R E L IM IN A R Y DALLAS SEMICONDUCTOR DS1265Y/AB 8M Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power Vcc A19 • Data is automatically protected during power loss NC • Unlimited write cycles


    OCR Scan     		PDF DS1265Y/AB DS1265Y) DS1265AB) 2bl413G DS1265Y/AB 36-PIN 36-PIN

    ds1255

    Abstract: DS1255Y
    Text: DS1265 Y/AB PRELIMINARY DALLAS SEMICONDUCTOR FEATURES DS1 265Y/ AB 8M Nonvolatile SRAM PIN A S S I G N M E N T • 10 years m inimum data retention in the absence of external power NC I 1 1 • Data is autom atically protected during power loss NC 11 A18 I 1


    OCR Scan     		PDF DS1265 DS1265Y) 36-pin DS1255Y/AB ds1255 DS1255Y