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    DS285 Price and Stock

    Elesa SPA GG.DS285

    MOB-SST, HORIZONTAL TOGGLE CLAMP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GG.DS285 Bag 1
    • 1 $82.72
    • 10 $82.72
    • 100 $82.72
    • 1000 $82.72
    • 10000 $82.72
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    Lorlin Electronics LTD SRL-5-D-S-2-850

    Keylock Switches 3A 50V 2 POS KEY OUT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SRL-5-D-S-2-850 3
    • 1 $13.98
    • 10 $13.98
    • 100 $9.15
    • 1000 $9.14
    • 10000 $9.14
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    Lorlin Electronics LTD SRL5DS2850 (ALTERNATE: 321054)

    Key Switch, SP-CO, 3 A@ 50 V dc, 5 A@ 115 V ac 2-Way, -20 - +65degC | Lorlin SRL5DS2850
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SRL5DS2850 (ALTERNATE: 321054) Bulk 1
    • 1 $11.95
    • 10 $10.14
    • 100 $9.2
    • 1000 $9.2
    • 10000 $9.2
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    Corsair Electrical Connectors Inc MS3402DS28-5PZ-LC

    Connector
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    FDH Electronics MS3402DS28-5PZ-LC 25 1
    • 1 $154.649
    • 10 $128.875
    • 100 $125.084
    • 1000 $116.517
    • 10000 $116.517
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    Corsair Electrical Connectors Inc MS3402DS28-5SW

    Connector
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    FDH Electronics MS3402DS28-5SW 25 1
    • 1 $190.502
    • 10 $158.752
    • 100 $154.083
    • 1000 $143.529
    • 10000 $143.529
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    DS285 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DS377

    Abstract: No abstract text available
    Text: IDT 89EB-LOGAN-19 Evaluation Board Manual Evaluation Board: 18-692-001 February 2011 6024 Silver Creek Valley Road, San Jose, California 95138 Telephone: (800) 345-7015 • (408) 284-8200 • FAX: (408) 284-2775 Printed in U.S.A. 2011 Integrated Device Technology, Inc.


    Original     		PDF 89EB-LOGAN-19 R1431 R1428 R1425 EB-LOGAN-19 SCH-PESEB-002 DS377

    F300H

    Abstract: FC44H BIT137
    Text: CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces 1.0 General Description The CP3BT23 connectivity processor combines high performance with the massive integration needed for embedded Bluetooth applications. A powerful RISC core with on-chip


    Original     		PDF CP3BT23 CSP-9-111C2) CSP-9-111S2) CSP-9-111S2. F300H FC44H BIT137

    CP3BT23

    Abstract: CP3BT23G18NEP CP3BT23G18NEPNOPB CR16C LMX5251 LMX5252 LQFP-144 315 receiver module
    Text: MAY 2004 CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces 1.0 General Description The CP3BT23 connectivity processor combines high performance with the massive integration needed for embedded Bluetooth applications. A powerful RISC core with on-chip


    Original     		PDF CP3BT23 CP3BT23G18NEP CP3BT23G18NEPNOPB CR16C LMX5251 LMX5252 LQFP-144 315 receiver module

    long rang TRANSMITTER Fm circuit

    Abstract: CP3BT23G18AWM CP3BT23G18AWMX CR16C LMX5251 LMX5252 LQFP-144 CP3BT23 SK 01 100 SA F80C
    Text: CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces 1.0 General Description The CP3BT23 connectivity processor combines high performance with the massive integration needed for embedded Bluetooth applications. A powerful RISC core with on-chip


    Original     		PDF CP3BT23 LMX5251 CP3BT23 LQFP-128 LQFP-144 long rang TRANSMITTER Fm circuit CP3BT23G18AWM CP3BT23G18AWMX CR16C LMX5252 SK 01 100 SA F80C

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CMPA5585025F CMPA5585025F CMPA55 85025F

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA5585025F CMPA5585025F CMPA55 85025F

    CMPA5585025F

    Abstract: power transistor gaas x-band CMPA5585025F-TB
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA5585025F CMPA5585025F CMPA55 85025F power transistor gaas x-band CMPA5585025F-TB

    Untitled

    Abstract: No abstract text available
    Text: CP3BT23 www.ti.com SNOSCX3A – JULY 2013 – REVISED JANUARY 2014 CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces Check for Samples: CP3BT23 1 Description The CP3BT23 connectivity processor combines high performance with the massive integration needed for


    Original     		PDF CP3BT23 CP3BT23 12-bit

    Untitled

    Abstract: No abstract text available
    Text: CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces 1.0 General Description The CP3BT23 connectivity processor combines high performance with the massive integration needed for embedded Bluetooth applications. A powerful RISC core with on-chip


    Original     		PDF CP3BT23

    Untitled

    Abstract: No abstract text available
    Text: CP3BT23 CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces Literature Number: SNOSAE2D CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces 1.0 General Description The CP3BT23 connectivity processor combines high performance with the massive integration needed for embedded


    Original     		PDF CP3BT23 CP3BT23

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CMPA5585025F CMPA5585025F CMPA55 85025F

    Untitled

    Abstract: No abstract text available
    Text: CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces 1.0 General Description The CP3BT23 connectivity processor combines high performance with the massive integration needed for embedded Bluetooth applications. A powerful RISC core with on-chip


    Original     		PDF CP3BT23 LMX5251 CP3BT23 LQFP-128 LQFP-144

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CMPA5585025F CMPA5585025F CMPA55 85025F

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA5585025F CMPA5585025F CMPA55 85025F

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Designs CP3BT23 CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces Literature Number: SNOSAE2D FEBRUARY 2007 CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces 1.0


    Original     		PDF CP3BT23 CP3BT23

    Untitled

    Abstract: No abstract text available
    Text: CP3BT23 www.ti.com SNOSCX3A – JULY 2013 – REVISED JANUARY 2014 CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces Check for Samples: CP3BT23 1 Description The CP3BT23 connectivity processor combines high performance with the massive integration needed for


    Original     		PDF CP3BT23 CP3BT23 12-bit

    Untitled

    Abstract: No abstract text available
    Text: CP3BT23 CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces Literature Number: SNOSAE2D CP3BT23 Reprogrammable Connectivity Processor with Bluetooth and Dual CAN Interfaces 1.0 General Description The CP3BT23 connectivity processor combines high performance with the massive integration needed for embedded


    Original     		PDF CP3BT23 CP3BT23

    Untitled

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


    Original     		PDF CMPA5585025F CMPA5585025F CMPA55 85025F

    x-Band Hemt Amplifier

    Abstract: No abstract text available
    Text: CMPA5585025F 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA5585025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium


    Original     		PDF CMPA5585025F CMPA5585025F CMPA55 85025F x-Band Hemt Amplifier

    FZT753

    Abstract: FZT751 FZT651
    Text: SOT223 PNP SILICON PLANAR M EDIU M POWER TRANSISTOR FEATURES * 2W P O W ER D ISSIPA T IO N . * * 3 A C O N T IN U O U S lc. G U A R A N T E E D H f e SP EC IFIED UP TO 2A. * L O W SA T U R A T IO N VOLTAGE. * C O M P L E M E N T A R Y TYPE - FZT651 P A R T M A R K IN G DETAIL - FZT751


    OCR Scan     		PDF OT223 FZT651 FZT751 100mA DS285 FZT753