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    Infrared Phototransistor

    Abstract: QSB320
    Text: QSB320F SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)


    Original     		PDF QSB320F QEB421 QEB421 QSB320FTR QSB320F Infrared Phototransistor QSB320

    K1 MARK 6PIN

    Abstract: MOC1193S
    Text: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES


    Original     		PDF MOC119 MOC119 E90700 diffe700, P01101067 MOC119300 MOC119300W MOC1193S MOC1193SD K1 MARK 6PIN

    Infrared Phototransistor

    Abstract: QSB320
    Text: QSB320 SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)


    Original     		PDF QSB320 QEB421 QSB320 Infrared Phototransistor

    MOC119

    Abstract: No abstract text available
    Text: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES


    Original     		PDF MOC119 MOC119 E90700 DS300382

    Infrared Phototransistor

    Abstract: QSB320 QEB421
    Text: QSB320 SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)


    Original     		PDF QSB320 QEB421 DS300386 Infrared Phototransistor QSB320 QEB421

    QSB320

    Abstract: No abstract text available
    Text: QSB320F SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)


    Original     		PDF QSB320F QEB421 DS300387 QSB320

    QVL25335

    Abstract: No abstract text available
    Text: SLOTTED OPTICAL SWITCH QVL25335 PACKAGE DIMENSIONS 3 2 .020 .50 .03 (.75) .023 (.60) XXXXXXX XX XXX .020 (.50) 4 1 SECTION X-X X XXXXXX XX XX X 1.150 (29.21) CL .177 (4.50) 2PLCS .276 (7.01) .398 (10.11) .138 (3.51) .638 (16.21) .200 (5.09) CL .350 (8.89)


    Original     		PDF QVL25335 QVL25335 DS300380

    hma121

    Abstract: HMA124 HMA2701 HMAA2705
    Text: FULL PITCH MINI-FLAT PACKAGE 4-PIN OPTOCOUPLERS HMA121 HMA124 HMA2701 HMAA2705 DESCRIPTION The HMA series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 2.54 mm.


    Original     		PDF HMA121 HMA124 HMA2701 HMAA2705 HMAA2705: HMA121: HMA2701: HMA124: DS300383 hma121 HMA124 HMA2701 HMAA2705

    Untitled

    Abstract: No abstract text available
    Text: QEB421 SURFACE MOUNT INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.083 (2.1) 0.067 (1.7) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)


    Original     		PDF QEB421 DS300385

    QEB421

    Abstract: No abstract text available
    Text: QEB421 SURFACE MOUNT INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.134 (3.4) 0.118 (3.0) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)


    Original     		PDF QEB421 DS300385 QEB421

    TA 2092 N

    Abstract: MOC119 SE-171 Swindon Silicon Systems
    Text: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES


    Original     		PDF MOC119 MOC119 E90700 DS300382 TA 2092 N SE-171 Swindon Silicon Systems

    4N40

    Abstract: solid state relay 220v 10a 4N39 IN5060 SC1460 4N39-4N40 Transistor SC1460
    Text: PHOTO SCR OPTOCOUPLERS DESCRIPTION 4N39 4N40 The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES • • • • 10 A, T2L compatible, solid state relay


    Original     		PDF E90700 4N40 solid state relay 220v 10a 4N39 IN5060 SC1460 4N39-4N40 Transistor SC1460

    QSB320

    Abstract: No abstract text available
    Text: QSB320 SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)


    Original     		PDF QSB320 QEB421 DS300386 QSB320

    Untitled

    Abstract: No abstract text available
    Text: QEB421 SURFACE MOUNT INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.134 (3.4) 0.118 (3.0) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)


    Original     		PDF QEB421 QEB421

    IN5060 diode

    Abstract: 45010 4N40 in5060 4N39 AN40 SC1460
    Text: PHOTO SCR OPTOCOUPLERS DESCRIPTION 4N39 4N40 The 4N39 and AN40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES • • • • 10 A, T2L compatible, solid state relay


    Original     		PDF E90700 DS300381 IN5060 diode 45010 4N40 in5060 4N39 AN40 SC1460

    QSB320

    Abstract: No abstract text available
    Text: QSB320F SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)


    Original     		PDF QSB320F QEB421 QEB421 QSB320FTR QSB320

    QSB320

    Abstract: No abstract text available
    Text: QSB320 SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)


    Original     		PDF QSB320 QEB421 QSB320

    QSB320

    Abstract: No abstract text available
    Text: QSB320 SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)


    Original     		PDF QSB320 QEB421 DS300386 QSB320

    Photo SCR

    Abstract: in5060 IN5060 diode Transistor SC1460 rgk 13 4N40 SCR TRIGGER PULSE circuit 4N39 SC1460 4N39-4N40
    Text: PHOTO SCR OPTOCOUPLERS DESCRIPTION 4N39 4N40 The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES • • • • 10 A, T2L compatible, solid state relay


    Original     		PDF E90700 DS30381 Photo SCR in5060 IN5060 diode Transistor SC1460 rgk 13 4N40 SCR TRIGGER PULSE circuit 4N39 SC1460 4N39-4N40

    QRE1113

    Abstract: No abstract text available
    Text: QRE1113.GR REFLECTIVE OBJECT SENSOR PACKAGE DIMENSIONS 0.114 2.90 0.099 (2.50) FEATURES 0.024 (0.60) 0.016 (0.40) 4 • Phototransistor output 3 • Tape and reel packaging • No contact surface sensing 0.079 (2.0) 0.063 (1.60) 0.130 (3.30) 0.122 (3.10)


    Original     		PDF QRE1113 DS300384

    BYV27-200

    Abstract: 202 sod57 DS30038
    Text: BYV27/50 - BYV27/200 2.0A SUPER-FAST GLASS BODY RECTIFIER Features • · · · · · Hermetically Sealed Glass Body Construction Controlled Avalanche Characteristics Super-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop


    Original     		PDF BYV27/50 BYV27/200 OD-57 OD-57, MIL-STD-202, DS30038 BYV27-200 202 sod57

    MOC119

    Abstract: darlington 300w
    Text: PHOTODARLINGTON OPTOCOUPLERS NO BASE CONNECTION MOC119 DESCRIPTION PACKAGE DIMENSIONS The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 6 FEATURES


    Original     		PDF MOC119 MOC119 E90700 darlington 300w

    Untitled

    Abstract: No abstract text available
    Text: QEB421 SURFACE MOUNT INFRARED LIGHT EMITTING DIODE PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.134 (3.4) 0.118 (3.0) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)


    Original     		PDF QEB421 QEB421

    Infrared Phototransistor

    Abstract: QEB421 QSB320F QSB320
    Text: QSB320F SURFACE MOUNT SILICON INFRARED PHOTOTRANSISTOR PACKAGE DIMENSIONS 0.118 3.0 0.102 (2.6) 0.083 (2.1) 0.067 (1.7) 0.091 (2.3) 0.083 (2.1) 0.134 (3.4) 0.118 (3.0) 0.041 (0.1) 0.035 (0.9) 0.028 (0.7) 0.094 (2.4) SCHEMATIC FEATURES 0.043 (1.1) 0.020 (0.5)


    Original     		PDF QSB320F QEB421 DS300387 Infrared Phototransistor QEB421 QSB320F QSB320