Untitled
Abstract: No abstract text available
Text: Preliminary. Subject to Change Without Notice. + PRELIMINARY DATA SHEET DS3205 Hot-Swappable Bus Buffer for I C, SMBus, IPMI and ATCA TM 2 www.maxim-ic.com GENERAL DESCRIPTION The DS3205 bus buffer enables hot insertion and extraction of boards without corruption of the
|
Original
|
DS3205
DS3205
|
PDF
|
DS3205
Abstract: No abstract text available
Text: Rev: 111607 DS3205 Hot-Swappable Bus Buffer for I2C, SMBus, IPMI, and ATCA Features General Description The DS3205 bus buffer enables hot insertion and extraction of boards without corruption of the backplane’s 2-wire bus I2C, SMBus , IPMI, etc. . When a board is inserted, the DS3205 presents highimpedance SCL and SDA connections to the
|
Original
|
DS3205
DS3205DN+
T1433-1
400kHz)
DS3205
|
PDF
|
DS3205
Abstract: No abstract text available
Text: DMG8880LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)
|
Original
|
DMG8880LK3
AEC-Q101
O252-3L
J-STD-020
O252-3L
DMG8880LK3-13
DS32052
DS3205
|
PDF
|
DS3205
Abstract: DMN2016LFG-7
Text: DMN2016LFG DUAL N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits • • • • • • • • ID RDS(on) max TA = 25°C 18mΩ @ VGS = 4.5V 5.2A 30mΩ @ VGS = 1.8V 4.0A 20V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance
|
Original
|
DMN2016LFG
AEC-Q101
DS32053
DS3205
DMN2016LFG-7
|
PDF
|
DMG4710SSS
Abstract: DMG4710SSS-13
Text: DMG4710SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency
|
Original
|
DMG4710SSS
AEC-Q101
DS32055
DMG4710SSS
DMG4710SSS-13
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMN2016LFG DUAL N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits • • • • • • • • ID RDS(on) max TA = 25°C 18mΩ @ VGS = 4.5V 5.2A 30mΩ @ VGS = 1.8V 4.0A 20V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance
|
Original
|
DMN2016LFG
AEC-Q101
DS32053
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ADV AN CE I N FORM AT I ON ZXMN10A11G 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 350mΩ @ VGS = 10V 2.4A 450mΩ @ VGS = 6.0V 2.1A 100V • Fast switching speed
|
Original
|
ZXMN10A11G
AEC-Q101
J-STD-020
MIL-STD-202,
DS32056
|
PDF
|
DMN6068LK3
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated DMN6068LK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS ID RDS(on) TA = 25°C 68mΩ @ VGS = 10V 8.5A 60V 100mΩ @ VGS = 4.5V 7.0A • 100% Unclamped Inductive Switch (UIS) test in production
|
Original
|
DMN6068LK3
AEC-Q101
O252-3L
DS32057
DMN6068LK3
|
PDF
|
DS3205
Abstract: No abstract text available
Text: DMG4710SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency
|
Original
|
DMG4710SSS
AEC-Q101
J-STD-020
DS32055
DS3205
|
PDF
|
DMG4710SSS
Abstract: DMG4710SSS-13 G471
Text: DMG4710SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency
|
Original
|
DMG4710SSS
AEC-Q101
J-STD-020
DS32055
DMG4710SSS
DMG4710SSS-13
G471
|
PDF
|
DMN6068LK3
Abstract: No abstract text available
Text: DMN6068LK3 Green Product Summary V BR DSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits ID RDS(on) TA = +25°C 68mΩ @ VGS = 10V 8.5A 100mΩ @ VGS = 4.5V 7.0A • 100% Unclamped Inductive Switch (UIS) test in production • Low on-resistance
|
Original
|
DMN6068LK3
AEC-Q101
J-STD-020
DS32057
DMN6068LK3
|
PDF
|
DS3205
Abstract: No abstract text available
Text: DMG4710SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency
|
Original
|
DMG4710SSS
AEC-Q101
J-STD-020
DS32055
DS3205
|
PDF
|
DS3205
Abstract: DMN6068LK3
Text: A Product Line of Diodes Incorporated DMN6068LK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 68mΩ @ VGS = 10V 8.5A 60V 100mΩ @ VGS = 4.5V 7.0A • 100% Unclamped Inductive Switch (UIS) test in production
|
Original
|
DMN6068LK3
AEC-Q101
O252-3L
DS32057
DS3205
DMN6068LK3
|
PDF
|
10A11
Abstract: ZXMN10A11G ZXMN10A11GTA DS3205 4.5V TO 100V INPUT REGULATOR
Text: A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMN10A11G 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 350mΩ @ VGS = 10V 2.4A 450mΩ @ VGS = 6.0V 2.1A 100V • Fast switching speed
|
Original
|
ZXMN10A11G
AEC-Q101
J-STD-020
MIL-STD-202,
DS32056
10A11
ZXMN10A11G
ZXMN10A11GTA
DS3205
4.5V TO 100V INPUT REGULATOR
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: DMG8880LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)
|
Original
|
DMG8880LK3
AEC-Q101
O252-3L
J-STD-020
DS32052
|
PDF
|
DMG4710SSS
Abstract: DMG4710SSS-13
Text: DMG4710SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary V BR DSS Features • ID max RDS(on) TA = 25°C (Note 5) 12.5mΩ @ VGS= 10V 11.7A 14.8mΩ @ VGS= 4.5V 10.8A 30V • • • DIOFET utilizes a unique patented process to monolithically
|
Original
|
DMG4710SSS
DS32055
DMG4710SSS
DMG4710SSS-13
|
PDF
|
TO252-3L
Abstract: DMG8880LK3 DMG8880LK3-13 G8880L
Text: DMG8880LK3 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)
|
Original
|
DMG8880LK3
AEC-Q101
O252-3L
J-STD-020
DMG8880LK3-13
O25knowledge
DS32052
TO252-3L
DMG8880LK3
DMG8880LK3-13
G8880L
|
PDF
|
DMN6068LK3
Abstract: DMN6068LK3-13 DMN6068
Text: A Product Line of Diodes Incorporated DMN6068LK3 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 68mΩ @ VGS= 10V 8.5A 60V 100mΩ @ VGS= 4.5V 7.0A • 100% Unclamped Inductive Switch (UIS) test in production
|
Original
|
DMN6068LK3
AEC-Q101
O252-3L
DS32057
DMN6068LK3
DMN6068LK3-13
DMN6068
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMG4710SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Product Summary V BR DSS • ID max RDS(on) TA = 25°C (Note 5) 12.5mΩ @ VGS= 10V 11.7A 14.8mΩ @ VGS= 4.5V 10.8A 30V • • • DIOFET utilizes a unique patented process to monolithically
|
Original
|
DMG4710SSS
DS32055
|
PDF
|
211 NC D005
Abstract: ZXMN10A11K ZXMN10A11KTC DSA0070194 10A11 089L 4.5V TO 100V INPUT REGULATOR
Text: A Product Line of Diodes Incorporated ZXMN10A11K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 350mΩ @ VGS = 10V 3.5A 450mΩ @ VGS = 6V 3.1A 100V • Fast switching speed • Low input capacitance
|
Original
|
ZXMN10A11K
AEC-Q101
MIL-STD-202,
J-STD-020
DS32058
211 NC D005
ZXMN10A11K
ZXMN10A11KTC
DSA0070194
10A11
089L
4.5V TO 100V INPUT REGULATOR
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMN10A11K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS ID RDS(on) TA = 25°C 350mΩ @ VGS = 10V 3.5A 450mΩ @ VGS = 6V 3.1A 100V • Fast switching speed • Low input capacitance
|
Original
|
ZXMN10A11K
AEC-Q101
MIL-STD-202,
DS32058
|
PDF
|
