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    DS3205

    Abstract: DMN2016LFG-7
    Text: DMN2016LFG DUAL N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits • • • • • • • • ID RDS(on) max TA = 25°C 18mΩ @ VGS = 4.5V 5.2A 30mΩ @ VGS = 1.8V 4.0A 20V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance


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    DMN2016LFG AEC-Q101 DS32053 DS3205 DMN2016LFG-7 PDF

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    Abstract: No abstract text available
    Text: DMN2016LFG DUAL N-CHANNEL ENHANCEMENT MODE MOSFET V BR DSS Features and Benefits • • • • • • • • ID RDS(on) max TA = 25°C 18mΩ @ VGS = 4.5V 5.2A 30mΩ @ VGS = 1.8V 4.0A 20V Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance


    Original
    DMN2016LFG AEC-Q101 DS32053 PDF