DMG4710SSS
Abstract: DMG4710SSS-13
Text: DMG4710SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency
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Original
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DMG4710SSS
AEC-Q101
DS32055
DMG4710SSS
DMG4710SSS-13
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PDF
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DS3205
Abstract: No abstract text available
Text: DMG4710SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency
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Original
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DMG4710SSS
AEC-Q101
J-STD-020
DS32055
DS3205
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PDF
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DMG4710SSS
Abstract: DMG4710SSS-13 G471
Text: DMG4710SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency
|
Original
|
DMG4710SSS
AEC-Q101
J-STD-020
DS32055
DMG4710SSS
DMG4710SSS-13
G471
|
PDF
|
DS3205
Abstract: No abstract text available
Text: DMG4710SSS NEW PRODUCT N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Mechanical Data • • • • • • • • • • • • • • High Density UMOS with Schottky Barrier Diode Low Leakage Current at High Temp. High Conversion Efficiency
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Original
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DMG4710SSS
AEC-Q101
J-STD-020
DS32055
DS3205
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMG4710SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary V BR DSS RDS(on) 30V Features ID max • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(ON) - minimizes conduction losses
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Original
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DMG4710SSS
DS32055
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PDF
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DMG4710SSS
Abstract: DMG4710SSS-13
Text: DMG4710SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Product Summary V BR DSS Features • ID max RDS(on) TA = 25°C (Note 5) 12.5mΩ @ VGS= 10V 11.7A 14.8mΩ @ VGS= 4.5V 10.8A 30V • • • DIOFET utilizes a unique patented process to monolithically
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Original
|
DMG4710SSS
DS32055
DMG4710SSS
DMG4710SSS-13
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DMG4710SSS N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE Features Product Summary V BR DSS • ID max RDS(on) TA = 25°C (Note 5) 12.5mΩ @ VGS= 10V 11.7A 14.8mΩ @ VGS= 4.5V 10.8A 30V • • • DIOFET utilizes a unique patented process to monolithically
|
Original
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DMG4710SSS
DS32055
|
PDF
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