TF-459
Abstract: 6A8 sot23-6 ZXMN6A08E6 ZXMN6A08E6TA
Text: A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXMN6A08E6 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C • Low on-resistance • Fast switching speed • Low gate drive 80mΩ @ VGS=10V
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Original
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ZXMN6A08E6
AEC-Q101
OT23-6
DS33376
TF-459
6A8 sot23-6
ZXMN6A08E6
ZXMN6A08E6TA
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PDF
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6A8 sot23-6
Abstract: ZXMN6A08
Text: A Product Line of Diodes Incorporated ZXMN6A08E6 ADVANCE INFORMATION 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary • Low On-Resistance Fast Switching Speed RDS ON ID TA = +25°C 80m @ VGS=10V 3.5A Low Gate Drive 2.5A Low Threshold
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Original
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ZXMN6A08E6
AEC-Q101
DS33376
6A8 sot23-6
ZXMN6A08
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ADV AN CE I N FORM AT I ON ZXMN6A08E6 60V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS ID RDS(on) TA = 25°C 80mΩ @ VGS=10V 3.5A 150mΩ @ VGS=4.5V 2.5A 100V • Low on-resistance •
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Original
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ZXMN6A08E6
AEC-Q101
DS33376
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PDF
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Untitled
Abstract: No abstract text available
Text: ZXMN6A08E6 60V N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary V BR DSS 60V Features and Benefits RDS(ON) ID TA = +25°C • Low On-Resistance • Fast Switching Speed Low Gate Drive 80mΩ @ VGS=10V 3.5A • 150mΩ @ VGS=4.5V 2.5A •
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Original
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ZXMN6A08E6
AEC-Q101
DS33376
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PDF
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