Japanese Transistor Data Book
Abstract: No abstract text available
Text: Doc No. TT4-EA-14130 Revision . 2 Product Standards Bipolar Transistor DSAF00100L DSAF00100L Silicon PNP epitaxial planar type Unit: mm For general amplification Complementary to DSCF001 DSA3001 in ML3 type package 0.6 3 • Features 1.0 High forward current transfer ratio hFE with excellent linearity
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TT4-EA-14130
DSAF00100L
DSCF001
DSA3001
UL-94
Japanese Transistor Data Book
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DSCF005
Abstract: No abstract text available
Text: Doc No. TT4-EA-14131 Revision . 2 Product Standards Bipolar Transistor DSAF00500L DSAF00500L Silicon PNP epitaxial planar type Unit: mm For general amplification Complementary to DSCF005 DSA3005 in ML3 type package 0.6 3 • Features 1.0 High forward current transfer ratio hFE with excellent linearity
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TT4-EA-14131
DSAF00500L
DSCF005
DSA3005
UL-94
DSCF005
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSAQ001 Silicon PNP epitaxial planar type For general amplification Complementary to DSCQ001 DSA3001 in USSMini3 type package • Features Package High forward current transfer ratio hFE with excellent linearity
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2002/95/EC)
DSAQ001
DSCQ001
DSA3001
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC3001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA3001 DSC9001 in SSSMini3 type package • Features Package High forward current transfer ratio hFE with excellent linearity
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2002/95/EC)
DSC3001
DSA3001
DSC9001
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DSA300I45NA
Abstract: No abstract text available
Text: DSA300I45NA preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 300 A VF = 0.76 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I45NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DSA300I45NA
OT-227B
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DSA300I45NA
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Untitled
Abstract: No abstract text available
Text: DSA300I200NA preliminary Schottky Diode Gen ² VRRM = 300 V I FAV = 300 A VF = 0.94 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I200NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DSA300I200NA
OT-227B
60747and
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Untitled
Abstract: No abstract text available
Text: DSA300I200NA preliminary Schottky Diode Gen ² F = High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Backside: Isolated 2 1 3 4 Features / Advantages: Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour
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DSA300I200NA
OT-227B
60747and
20120907a
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSA3001 Silicon PNP epitaxial planar type For general amplification Complementary to DSC3001 DSA9001 in SSSMini3 type package • Features Package High forward current transfer ratio hFE with excellent linearity
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PDF
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2002/95/EC)
DSA3001
DSC3001
DSA9001
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DSA300I200NA
Abstract: No abstract text available
Text: DSA300I200NA preliminary Schottky Diode Gen ² VRRM = 200 V I FAV = 300 A VF = 0.94 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I200NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DSA300I200NA
OT-227B
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DSA300I200NA
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Untitled
Abstract: No abstract text available
Text: DSA300I100NA preliminary Schottky Diode Gen ² VRRM = 100 V I FAV = 300 A VF = 0.88 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I100NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DSA300I100NA
OT-227B
RoHS00
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DSC3001
Abstract: DSA300100
Text: DSA3001 Silicon PNP epitaxial planar type Unit: mm For general amplification Complementary to DSC3001 DSA9001 in SSSMini3 type package • Features High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE sat
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DSA3001
DSC3001
DSA9001
UL-94
DSA300100L
DSA300100
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Untitled
Abstract: No abstract text available
Text: DSA300I45NA preliminary Schottky Diode Gen ² F = High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Backside: Isolated 2 1 3 4 Features / Advantages: Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour
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DSA300I45NA
OT-227B
60747and
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Untitled
Abstract: No abstract text available
Text: DSC3001 Silicon NPN epitaxial planar type Unit: mm For general amplification Complementary to DSA3001 DSC9001 in SSSMini3 type package • Features High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE sat
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DSC3001
DSA3001
DSC9001
UL-94
DSC300100L
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Untitled
Abstract: No abstract text available
Text: DSA300I100NA preliminary Schottky Diode Gen ² VRRM = 100 V I FAV = 300 A VF = 0.88 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I100NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DSA300I100NA
OT-227B
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DSA300I200NA
Abstract: IXYS DSA300I200NA DSA300I45NA diode by 126
Text: DSA300I200NA preliminary Schottky Diode Gen ² VRRM = 200 V I FAV = 300 A VF = 0.94 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I200NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DSA300I200NA
OT-227B
60747and
20120907a
DSA300I200NA
IXYS DSA300I200NA
DSA300I45NA
diode by 126
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Untitled
Abstract: No abstract text available
Text: DSA3001 Silicon PNP epitaxial planar type Unit: mm For general amplification Complementary to DSC3001 DSA9001 in SSSMini3 type package • Features High forward current transfer ratio hFE with excellent linearity Low collector-emitter saturation voltage VCE sat
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DSA3001
DSC3001
DSA9001
UL-94
DSA300100L
10easures
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Untitled
Abstract: No abstract text available
Text: DSA300I100NA preliminary Schottky Diode Gen ² F = High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Backside: Isolated 2 1 3 4 Features / Advantages: Very low Vf Extremely low switching losses Low Irm values Improved thermal behaviour
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PDF
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DSA300I100NA
OT-227B
60747and
20120907a
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Untitled
Abstract: No abstract text available
Text: DSA300I45NA preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 300 A VF = 0.76 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I45NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DSA300I45NA
OT-227B
60747and
20120907a
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DSA300I45NA
Abstract: No abstract text available
Text: DSA300I45NA preliminary Schottky Diode Gen ² VRRM = 45 V I FAV = 300 A VF = 0.76 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I45NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DSA300I45NA
OT-227B
60747and
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DSA300I45NA
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSA3001 (Tentative) Silicon PNP epitaxial planar type For general amplification Complementary to DSC3001 • Absolute Maximum Ratings Ta = 25°C Parameter Package Symbol Rating Unit Collector-base voltage (Emitter open)
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2002/95/EC)
DSA3001
DSC3001
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DSC3001
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC3001 (Tentative) Silicon NPN epitaxial planar type For general amplification Complementary to DSA3001 • Absolute Maximum Ratings Ta = 25°C Parameter Package Symbol Rating Unit Collector-base voltage (Emitter open)
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PDF
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2002/95/EC)
DSC3001
DSA3001
DSC3001
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DSA300I100NA
Abstract: No abstract text available
Text: DSA300I100NA preliminary Schottky Diode Gen ² VRRM = 100 V I FAV = 300 A VF = 0.88 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSA300I100NA Backside: Isolated 2 1 3 4 Features / Advantages: Applications: Package: SOT-227B minibloc
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DSA300I100NA
OT-227B
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20120907a
DSA300I100NA
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DSC3001
Abstract: DSA3001 ZJC00439BED
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSC3001 Silicon NPN epitaxial planar type For general amplification Complementary to DSA3001 • Features Package High forward current transfer ratio hFE with excellent linearity Eco-friendly Halogen-free package
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2002/95/EC)
DSC3001
DSA3001
DSC3001
DSA3001
ZJC00439BED
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DSA3001
Abstract: DSC3001 ZJC00435BED DSA300
Text: This product complies with the RoHS Directive EU 2002/95/EC . DSA3001 Silicon PNP epitaxial planar type For general amplification Complementary to DSC3001 • Features Package High forward current transfer ratio hFE with excellent linearity Eco-friendly Halogen-free package
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2002/95/EC)
DSA3001
DSC3001
DSA3001
DSC3001
ZJC00435BED
DSA300
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