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    20X12

    Abstract: No abstract text available
    Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPHCM-2012SECK Super Bright Orange Features Description z 2.0X1.25mm SMT LED,0.5mm max. thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


    Original
    KPHCM-2012SECK 2000pcs JAN/13/2010 KPHCM-2012SECK DSAE5997 20X12 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPHCM-2012SECK Super Bright Orange Features Description z 2.0X1.25mm SMT LED,0.5mm max. thickness. The Super Bright Orange device is made with AlGaInP on z Low power consumption. GaAs substrate light emitting diode chip.


    Original
    KPHCM-2012SECK 2000pcs DSAE5997 DEC/22/2011 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPHCM-2012SECK PRELIMINARY SPEC Super Bright Orange Features Description z 2.0X1.25mm SMT LED,0.5mm MAX.THICKNESS. The Super Bright Orange device is made with InGaAlP z LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip.


    Original
    KPHCM-2012SECK 2000PCS DSAE5997 JUL/02/2007 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.0x1.25mm SMD CHIP LED LAMP Part Number: KPHCM-2012SECK Super Bright Orange Features Description 2.0X1.25mm SMT LED,0.5mm max. thickness. The Super Bright Orange device is made with AlGaInP on Low power consumption. GaAs substrate light emitting diode chip.


    Original
    KPHCM-2012SECK 2000pcs DEC/20/2010 DSAE5997 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2.0x1.25mm SMD CHIP LED LAMP PRELIMINARY SPEC Part Number: KPHCM-2012SECK SUPER BRIGHT ORANGE Features Description ●2.0X1.25mm SMT LED,0.5mm MAX.THICKNESS. The Super Bright Orange device is made with DH InGaAlP ●LOW POWER CONSUMPTION. on GaAs substrate light emitting diode chip.


    Original
    KPHCM-2012SECK 2000PCS DSAE5997 JAN/10/2007 PDF