DMN62D4SDW-7
Abstract: ANALOG DEVICES ASSEMBLY DATE CODE Analog devices assembly code marking Information DMG2307L Analog devices marking Information Analog devices marking DMN2027USS-13 a/ANALOG DEVICES ASSEMBLY DATE CODE TL432BSA-7 DJT4031N
Text: DATE: 29th April, 2013 PCN #: 2094 – Rev01 PCN Title: Qualification of "Diodes Technology Cheng Du Company Limited" (DTC) as an Additional Assembly & Test Site for SOP-8, SOT-23, SOT223, SOT-323, SOT-363, SSOT-23, and SOD-323 Packaged Parts,
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Rev01
OT-23,
OT223,
OT-323,
OT-363,
SSOT-23,
OD-323
PCN-2061
PCN-2070.
OD-323
DMN62D4SDW-7
ANALOG DEVICES ASSEMBLY DATE CODE
Analog devices assembly code marking Information
DMG2307L
Analog devices marking Information
Analog devices marking
DMN2027USS-13
a/ANALOG DEVICES ASSEMBLY DATE CODE
TL432BSA-7
DJT4031N
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD BAT54SW DIODE SCH OT T K Y BARRI ER DU AL DI ODES ̈ DESCRI PT I ON Planar Schottky barrier diodes are encapsulated in the SOT-323 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.
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BAT54SW
OT-323
BAT54SWL-AL3-R
BAT54SWG-AL3-R
QW-R601-054
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD BAT54CW DIODE SCH OT T K Y BARRI ER DU AL DI ODES ̈ DESCRI PT I ON Planar Schottky barrier diodes are encapsulated in the SOT-323 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.
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BAT54CW
OT-323
BAT54CWL-AL3-R
BAT54CWG-AL3-R
QW-R601-050
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD BAT54AW DIODE SCH OT T K Y BARRI ER DU AL DI ODES ̈ DESCRI PT I ON Planar Schottky barrier diodes are encapsulated in the SOT-323 small plastic SMD package. Single diodes and dual diodes with different pin configuration are available.
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BAT54AW
OT-323
BAT54AWL-AL3-R
BAT54AWG-AL3-R
QW-R601-047
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD BAV70W Preliminary DIODE DU AL SU RFACE M OU N T SWI T CH I N G DI ODE ̈ DESCRI PT I ON The UTC BAV70W is a dual surface mount switching diode providing the designers high switching speed, high conductance and high reliability.
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BAV70W
BAV70W
BAV70WL-AL3-R
BAV70WG-AL3-R
OT-323
QW-R601-038
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD BAV199W Preliminary DIODE DU AL SU RFACE M OU N T LOW LEAK AGE DI ODE ̈ DESCRI PT I ON The UTC BAV199W is a dual surface mount diode providing the designers with extremely low leakage current. The UTC BAV199W is suitable for automatic insertion
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BAV199W
BAV199W
BAV199WL-AL3-R
BAV199WG-AL3-R
OT-323
QW-R601-045
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smd diode code ED
Abstract: No abstract text available
Text: SD DS14 42WM M SWITC CHING DIOD DE S Small Signal Fast F Sw witchin ng Diod de Ge eneral De escription n Du ual general-purpose sw witching diod des, fabrica ated in plana ar tecchnology, and package ed in small SOT-323 S su urface moun nted de evice SMD packages.
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OT-323
OT-323
25-AUG-10
KSD-D5D014-001
smd diode code ED
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smd diode code ED
Abstract: No abstract text available
Text: SD DS14 42WA A SWITC CHING DIOD DE S Small Signal Fast F Sw witchin ng Diod de Ge eneral De escription n Du ual general-purpose sw witching diod des, fabrica ated in plana ar tecchnology, and package ed in small SOT-323 S su urface moun nted de evice SMD packages.
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OT-323
OT-323
25-AUG-10
KSD-D5D012-001
smd diode code ED
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Untitled
Abstract: No abstract text available
Text: SD DS14 42WA A SWITC CHING DIOD DE S Small Signal Fast F Sw witchin ng Diod de Ge eneral De escription n Du ual general-purpose sw witching diod des, fabrica ated in plana ar tecchnology, and package ed in small SOT-323 S su urface moun nted de evice SMD packages.
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OT-323
OT-323
25-AUG-10
KSD-D5D012-001
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smd diode code ED
Abstract: diod smd smd diod DS14 SDS142WM DIODE SMD MARKING 5C Diode SMD MARKING CODE ED diod marking AR sot323 diode smd ed 06 diod marking 07
Text: SD DS14 42WM M SWITC CHING DIOD DE S Small Signal Fast F Sw witchin ng Diod de Ge eneral De escription n Du ual general-purpose sw witching diod des, fabrica ated in plana ar tecchnology, and package ed in small SOT-323 S su urface moun nted de evice SMD packages.
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OT-323
OT-323
25-AUG-10
KSD-D5D014-001
smd diode code ED
diod smd
smd diod
DS14
SDS142WM
DIODE SMD MARKING 5C
Diode SMD MARKING CODE ED diod
marking AR sot323
diode smd ed 06
diod marking 07
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marking a6a
Abstract: A6* diod
Text: SD DS14 42WK K SWITC CHING DIOD DE S Small Signal Fast F Sw witchin ng Diod de Ge eneral De escription n Du ual general-purpose sw witching diod des, fabrica ated in plana ar tecchnology, and package ed in small SOT-323 S su urface moun nted de evice SMD packages.
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OT-323
OT-323
25-AUG-10
KSD-D5D021-000
marking a6a
A6* diod
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD BAV99 DIODE H I GH CON DU CT AN CE U LT RA FAST DI ODE ̈ EQU I V ALEN T For 3 Pin Package For 6 Pin Package ̈ ORDERI N G I N FORM AT I ON Ordering Number Lead Free Halogen Free BAV99L-AE3-R BAV99G-AE3-R BAV99L-AL3-R BAV99G-AL3-R
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BAV99
BAV99L-AE3-R
BAV99G-AE3-R
BAV99L-AL3-R
BAV99G-AL3-R
BAV99L-AN3-R
BAV99G-AN3-R
BAV99L-AL6-R
BAV99G-AL6-R
OT-23
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD 2N7002ZW Power MOSFET 3 0 0 m A, 6 0 V DU AL N -CH AN N EL EN H AN CEM EN T M ODE M OSFET DESCRI PT I ON The UTC 2N7002ZW uses advanced technology to provide excellent RDS ON , low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM
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2N7002ZW
2N7002ZW
2N7002ZWL-AL3-R
2N7002ZWG-AL3-R
QW-R502-539
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TK12A10K3
Abstract: tk25e06k3 TK50E06K3A tk20e60u TPCA*8065 TJ11A10M3 SSM6J501NU TPCA8077 TJ9A10M3 TK8A10K3
Text: 製品カタログ 2010-9 東芝半導体 製品カタログ MOSFET S SE EM M II C CO ON ND DU UC C TT O OR R h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3
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BCJ0082D
BCJ0082C
TK12A10K3
tk25e06k3
TK50E06K3A
tk20e60u
TPCA*8065
TJ11A10M3
SSM6J501NU
TPCA8077
TJ9A10M3
TK8A10K3
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BAS70-07S
Abstract: BAS70-08S
Text: BAS70-07S / BAS70-08S RF DETECTION DIODE FEATURES AND BENEFITS • ■ ■ LOW DIODE CAPACITANCE LOW SERIES INDUCTANCE AND RESISTANCE SURFACE MOUNT PACKAGE DESCRIPTION Dual and Triple Schottky diode in SOT323-6L package. This diode is intented to be used in RF
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BAS70-07S
BAS70-08S
OT323-6L
BAS70-08S
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SCD80
Abstract: BB857 BB831 BB689 BB664 varactor diode fm varicap diode vhf SCD-80 "Varactor Diodes" bb833 data sheet hyperabrupt tuned oscillator BB640 Varactor Diodes
Text: For VCO and Tuner Applications Never stop thinking. VCO Applications hyperabrupt varactor diodes for VCOs in mobile phones high capacitance ratio at low tuning voltages supports 2 cell designs Mobile Phones low series resistance provides low phase noise and high Q characteristics
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SCD80
OT323
BBY55-OxW,
BBY56-OxW,
BBY57-OxW,
BBY58-OxW
ana50
BB831
BB833
BB857 BB831 BB689 BB664
varactor diode fm
varicap diode vhf
SCD-80
"Varactor Diodes"
bb833 data sheet
hyperabrupt tuned oscillator
BB640
Varactor Diodes
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74V1G79
Abstract: No abstract text available
Text: 74V1G79 SINGLE POSITIVE EDGE TRIGGERED D-TYPE FLIP-FLOP • ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: fMAX = 180MHz TYP. at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS
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74V1G79
180MHz
74V1G79
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74V1T07
Abstract: No abstract text available
Text: 74V1T07 SINGLE BUFFER OPEN DRAIN • ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4.3ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C COMPATIBLE WITH TTL OUTPUTS: VIH = 2V (MIN), VIL = 0.8V (MAX) POWER DOWN PROTECTION ON INPUT OPERATING VOLTAGE RANGE:
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74V1T07
74V1T07
OT23-5L
OT323-5L
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74V1T00
Abstract: No abstract text available
Text: 74V1T00 SINGLE 2-INPUT NAND GATE • ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 5.0ns TYP. at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C COMPATIBLE WITH TTL OUTPUTS: VIH = 2V (MIN), VIL = 0.8V (MAX) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE:
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74V1T00
74V1T00
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74V1G02
Abstract: No abstract text available
Text: 74V1G02 SINGLE 2-INPUT NOR GATE • ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 3.6ns TYP. at VCC = 5V LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C HIGH NOISE IMMUNITY: VNIH = VNIL = 28% VCC (MIN.) POWER DOWN PROTECTION ON INPUTS SYMMETRICAL OUTPUT IMPEDANCE:
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74V1G02
74V1G02
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74LX1G86
Abstract: No abstract text available
Text: 74LX1G86 SINGLE EXCLUSIVE OR GATE • ■ ■ ■ ■ ■ ■ ■ 5V TOLERANT INPUTS HIGH SPEED: tPD = 5ns MAX. at VCC = 3V LOW POWER DISSIPATION: ICC = 1µA (MAX.) at TA = 25°C POWER DOWN PROTECTION ON INPUTS AND OUTPUTS SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 24mA (MIN) at VCC = 3V
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74LX1G86
74LX1G86
OT23-5L
OT323-5L
OT323-
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TSH120ICT
Abstract: SOT323-6 JESD97 SC70-6 TSH120
Text: TSH120 2.2V to 5V video buffer with SAG correction Features • Very low consumption ■ Standby mode available ■ Internal reconstruction filter ■ Internal gain of 6dB ■ Rail-to-rail output ■ Tested with +2.5V and +3.3V single supply ■ Operation supply from +2.2V to +5.5V
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TSH120
TSH120ICT
SOT323-6
JESD97
SC70-6
TSH120
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74LX1G08
Abstract: No abstract text available
Text: 74LX1G08 LOW VOLTAGE CMOS SINGLE 2-INPUT AND GATE WITH 5V TOLERANT INPUT • ■ ■ ■ ■ ■ ■ ■ 5V TOLERANT INPUTS HIGH SPEED: tPD = 4.5ns MAX. at VCC = 3V LOW POWER DISSIPATION: ICC = 1µA (MAX.) at TA = 25°C POWER DOWN PROTECTION ON INPUTS AND OUTPUTS
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74LX1G08
74LX1G08
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Untitled
Abstract: No abstract text available
Text: P h ilip s S e m icon du ctors • bbSB'lBl DDSM'IST ^b7 H A P X N ANER PHILIPS/DISCRETE b?E D' NPN general purpose transistor FE A T U R E S Product specification BC846W; BC847W; BC848W PIN CONFIGURATION • S- mini package. S i _ EL DESCRIPTION NPN transistor in a plastic SOT323
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OCR Scan
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BC846W;
BC847W;
BC848W
OT323
MBC67
BC846W:
BC846AW
BC846BW
BC847W:
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