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    DUAL FET L6 Search Results

    DUAL FET L6 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    FO-DUALSTLC00-001 Amphenol Cables on Demand Amphenol FO-DUALSTLC00-001 ST-LC Duplex Multimode 62.5/125 Fiber Optic Patch Cable (OFNR Riser) - 2 x ST Male to 2 x LC Male 1m Datasheet
    FO-DUALSTLC00-004 Amphenol Cables on Demand Amphenol FO-DUALSTLC00-004 ST-LC Duplex Multimode 62.5/125 Fiber Optic Patch Cable (OFNR Riser) - 2 x ST Male to 2 x LC Male 4m Datasheet
    FO-LSDUALSCSM-003 Amphenol Cables on Demand Amphenol FO-LSDUALSCSM-003 SC-SC Duplex Single-Mode 9/125 Fiber Optic Patch Cable (OFN-LS Low Smoke) - 2 x SC Male to 2 x SC Male 3m Datasheet
    FO-DUALLCX2MM-001 Amphenol Cables on Demand Amphenol FO-DUALLCX2MM-001 LC-LC Duplex Multimode 62.5/125 Fiber Optic Patch Cable (OFNR Riser) - 2 x LC Male to 2 x LC Male 1m Datasheet
    FO-DUALLCX2MM-003 Amphenol Cables on Demand Amphenol FO-DUALLCX2MM-003 LC-LC Duplex Multimode 62.5/125 Fiber Optic Patch Cable (OFNR Riser) - 2 x LC Male to 2 x LC Male 3m Datasheet

    DUAL FET L6 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT handbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 NXP Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES BF1206 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single


    Original     		MBD128 BF1206 OT363 R77/01/pp22 PDF

    AN 7591 POWER AMPLIFIER

    Abstract: an 7591 BF1206 an 7591 power amp dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 NXP Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES BF1206 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single


    Original     		MBD128 BF1206 OT363 R77/01/pp22 AN 7591 POWER AMPLIFIER an 7591 BF1206 an 7591 power amp dual-gate PDF

    transistor 341 20P

    Abstract: marking sot363 20p UHF Dual Gate uhf vhf amplifier dual-gate dual gate fet FET MARKING CODE FET marking codes FET Spec sheet marking 865 amplifier
    Text: DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 BF1206 Dual N-channel dual-gate MOS-FET Product specification 2003 Nov 17 Philips Semiconductors Product specification Dual N-channel dual-gate MOS-FET FEATURES BF1206 PINNING - SOT363 • Two low noise gain controlled amplifiers in a single


    Original     		MBD128 BF1206 OT363 SCA75 20p/01/pp21 transistor 341 20P marking sot363 20p UHF Dual Gate uhf vhf amplifier dual-gate dual gate fet FET MARKING CODE FET marking codes FET Spec sheet marking 865 amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: CXG1150ER Triple Low Noise Amplifier/Dual Mixer For the availability of this product, please contact the sales office. Description The CXG1150ER is a triple low noise amplifier/dual mixer MMIC, which has made through the Sony's GaAs J-FET process. Features


    Original     		CXG1150ER CXG1150ER 15dBm 24-pin 800MHz/1 24PIN VQFN-24P-03 PDF

    16PIN

    Abstract: CXG1082EN GC1210 sony 330
    Text: CXG1082EN Receive Dual Low Noise Amplifier/Mixer For the availability of this product, please contact the sales office. Description The CXG1082EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process.


    Original     		CXG1082EN CXG1082EN 15dBm 16-pin 16PIN VSON-16P-01 GC1210 sony 330 PDF

    GP318

    Abstract: No abstract text available
    Text: CXG1082EN Receive Dual Low Noise Amplifier/Mixer Description The CXG1082EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process. 16 pin VSON Plastic Features • High conversion gain: Gp = 17dB (LNA Typ.)


    Original     		CXG1082EN CXG1082EN 15dBm 16-pin 800MHz 16PIN VSON-16P-01 GP318 PDF

    gps l10

    Abstract: 24PIN CXG1115AER signal amplifier 800 mhz cdma
    Text: CXG1115AER Dual-band Low Noise Amplifier/Mixer Description The CXG1115AER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic)


    Original     		CXG1115AER CXG1115AER VQFN-24P-04 gps l10 24PIN signal amplifier 800 mhz cdma PDF

    Untitled

    Abstract: No abstract text available
    Text: CXG1115AER Dual-band Low Noise Amplifier/Mixer Description The CXG1115AER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic)


    Original     		CXG1115AER CXG1115AER VQFN-24P-04 PDF

    24PIN

    Abstract: CXG1118ER GC118
    Text: CXG1118ER Dual-band Low Noise Amplifier/Mixer Description The CXG1118ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features


    Original     		CXG1118ER CXG1118ER VQFN-24P-03 24PIN GC118 PDF

    L9150

    Abstract: 16PIN CXG1109EN
    Text: CXG1109EN Receive Dual Low Noise Amplifier/Mixer Description The CXG1109EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process. 16 pin VSON Plastic Features • High conversion gain: Gp = 16.5 to 17dB (LNA Typ.)


    Original     		CXG1109EN CXG1109EN 16-pin 16PIN VSON-16P-01 L9150 PDF

    Untitled

    Abstract: No abstract text available
    Text: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features


    Original     		CXG1115ER CXG1115ER 24PIN VQFN-24P-03 PDF

    3618A

    Abstract: 24PIN CXG1118ER SONY CHOKE cxg1118
    Text: CXG1118ER Dual-band Low Noise Amplifier/Mixer Description The CXG1118ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features


    Original     		CXG1118ER CXG1118ER VQFN-24P-03 3618A 24PIN SONY CHOKE cxg1118 PDF

    gps l10

    Abstract: No abstract text available
    Text: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features


    Original     		CXG1115ER CXG1115ER 24PIN VQFN-24P-03 gps l10 PDF

    16PIN

    Abstract: CXG1109EN
    Text: CXG1109EN Receive Dual Low Noise Amplifier/Mixer Description The CXG1109EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process. 16 pin VSON Plastic Features • High conversion gain: Gp = 16.5 to 17dB (LNA Typ.)


    Original     		CXG1109EN CXG1109EN 16-pin VSON-16P-01 16PIN PDF

    ic 810

    Abstract: 16PIN CXG1109EN
    Text: CXG1109EN Receive Dual Low Noise Amplifier/Mixer Description The CXG1109EN is a receive dual low noise amplifier/ mixer MMIC. This IC is designed using the Sony’s GaAs J-FET process. 16 pin VSON Plastic Features • High conversion gain: Gp = 16.5 to 17dB (LNA Typ.)


    Original     		CXG1109EN CXG1109EN 16-pin VSON-16P-01 ic 810 16PIN PDF

    24PIN

    Abstract: CXG1150ER
    Text: CXG1150ER Triple Low Noise Amplifier/Dual Mixer Description The CXG1150ER is a triple low noise amplifier/dual mixer MMIC, which has made through the Sony's GaAs J-FET process. Features • 3V single power supply operation • 3-pin control by the on-chip logic circuit


    Original     		CXG1150ER CXG1150ER 15dBm 24-pin 800MHz/1 VQFN-24P-03 24PIN PDF

    24PIN

    Abstract: CXG1115ER
    Text: CXG1115ER Dual-band Low Noise Amplifier/Mixer Description The CXG1115ER is a dual-band CDMA/GPS low noise amplifier/mixer MMIC for the Japan CDMA cellular phones (J-CDMA). This IC is designed using the Sony’s GaAs J-FET process. 24 pin VQFN (Plastic) Features


    Original     		CXG1115ER CXG1115ER VQFN-24P-03 24PIN PDF

    a210701e

    Abstract: PTFA210701E 1K capacitor lm 2094 BCP56 LM7805 PTFA210701F RO4350
    Text: PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier


    Original     		PTFA210701E PTFA210701F PTFA210701E PTFA210701F 70-watt H-36265-2 H-37265-2 a210701e 1K capacitor lm 2094 BCP56 LM7805 RO4350 PDF

    Untitled

    Abstract: No abstract text available
    Text: PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier


    Original     		PTFA210701E PTFA210701F PTFA210701E PTFA210701F 70-watt H-36265-2 H-37265-2 214bstances. PDF

    PTFA210701E

    Abstract: BCP56 LM7805 PTFA210701F RO4350 elna 50v lm 2094
    Text: PTFA210701E PTFA210701F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz Description The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs designed for single- and dual-carrier WCDMA power amplifier


    Original     		PTFA210701E PTFA210701F PTFA210701E PTFA210701F 70-watt H-36265-2 H-37265-2 BCP56 LM7805 RO4350 elna 50v lm 2094 PDF

    Untitled

    Abstract: No abstract text available
    Text: CXG1097EN Low Noise Amplifier with Bypass Switch/Mixer Description The CXG1097EN is a dual mode low noise amplifier with a bypass switch/ mixer MMIC for Japan CDMA cellular. This IC is designed using the Sony's GaAs J-FET process. 16 pin VSON Plastic Features


    Original     		CXG1097EN CXG1097EN 16-pin 16PIN VSON-16P-01 PDF

    16PIN

    Abstract: CXG1097EN
    Text: CXG1097EN Low Noise Amplifier with Bypass Switch/Mixer Description The CXG1097EN is a dual mode low noise amplifier with a bypass switch/ mixer MMIC for Japan CDMA cellular. This IC is designed using the Sony's GaAs J-FET process. 16 pin VSON Plastic Features


    Original     		CXG1097EN CXG1097EN 16-pin 16PIN VSON-16P-01 PDF

    pj 989

    Abstract: dual fet L6 PJ 3236 1000J CFK0301 CFK0301-AK-0000 CFK0301-AK-000T Scans-00553
    Text: -CELEKITEÊf Product S pecifications A pril 1998 1 o f 4 CFK0301 High Dynamic Range Dual, Low-Noise GaAs FET Features □ Dual 600 jim GaAs FETs in a Single Package □ Guaranteed Low-Noise Figure: 0.8 to 2.0 GHz □ Excellent Gain and Phase Matching


    OCR Scan     		CFK0301 CFK0301 pj 989 dual fet L6 PJ 3236 1000J CFK0301-AK-0000 CFK0301-AK-000T Scans-00553 PDF

    Untitled

    Abstract: No abstract text available
    Text: SSLERITSK P ro d u c t S p e c ific a tio n s A p ril 1 9 9 8 1 o f 4 CFK0301 High Dynamic Range Dual, Low-Noise GaAs FET Features □ Dual 600 jim GaAs FETs in a Single Package □ Guaranteed Low-Noise Figure: 0.8 to 2.0 GHz □ Excellent Gain and Phase Matching


    OCR Scan     		CFK0301 CFK0301 PDF